Vol. 63, No. 4, 2020

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Complementary tunneling transistors based on WSe2/SnS2 van der Waals heterostructure
Jia R D, Chen L, Huang Q Q, et al
Sci China Inf Sci, 2020, 63(4): 149401
Cite as: Jia R D, Chen L, Huang Q Q, et al. Complementary tunneling transistors based on WSe2/SnS2 van der Waals heterostructure. Sci China Inf Sci, 2020, 63(4): 149401, doi: 10.1007/s11432-019-9872-x

Vol. 63, No. 2, 2020

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Keywords: Titanium Nitride; Capping Layer; ALD TiN; FinFET; Positive Bias Temperature Instability; PBTI
Cite as: Yang H, Qi L W, Zhang Y B, et al. Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks. Sci China Inf Sci, 2020, 63(2): 129403, doi: 10.1007/s11432-019-9875-2

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Keywords: Subthreshold Swing; Band-to-band tunneling; BTBT; Adaptive bandgap engineering; Junction depleted-modulation; Tunnel field-effect transistor
Cite as: Zhao Y, Huang Q Q, Huang R. A novel tunnel FET design through hybrid modulation with optimized subthreshold characteristics and high drive capability. Sci China Inf Sci, 2020, 63(2): 129402, doi: 10.1007/s11432-019-9874-9

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Golden chip free Trojan detection leveraging probabilistic neural network with genetic algorithm applied in the training phase
Liu, Yanjiang; He, Jiaji; Ma, Haocheng; Zhao, Yiqiang
Sci China Inf Sci, 2020, 63(2): 129401
Keywords: hardware Trojan; integrated circuit; golden chip-free Trojan detection; genetic algorithm; probabilistic neural network
Cite as: Liu Y J, He J J, Ma H C, et al. Golden chip free Trojan detection leveraging probabilistic neural network with genetic algorithm applied in the training phase. Sci China Inf Sci, 2020, 63(2): 129401, doi: 10.1007/s11432-019-9803-8

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Deterministic conversion rule for CNNs to efficient spiking convolutional neural networks
Yang X, Zhang Z X, Zhu W P, et al
Sci China Inf Sci, 2020, 63(2): 122402
Cite as: Yang X, Zhang Z X, Zhu W P, et al. Deterministic conversion rule for CNNs to efficient spiking convolutional neural networks. Sci China Inf Sci, 2020, 63(2): 122402, doi: 10.1007/s11432-019-1468-0

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Vertical SnS2/Si heterostructure for tunnel diodes
Jia, Rundong; Huang, Qianqian; Huang, Ru
Sci China Inf Sci, 2020, 63(2): 122401
Keywords: 2D/3D heterostructure; SnS2/Si; tunnel barrier; tunnel diode; energy-efficient
Cite as: Jia R D, Huang Q Q, Huang R. Vertical SnS2/Si heterostructure for tunnel diodes. Sci China Inf Sci, 2020, 63(2): 122401, doi: 10.1007/s11432-019-9836-9

Vol. 62, No. 12, 2019 Cover Contents

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A quantum image dual-scrambling encryption scheme based on random permutation
Zhu, Hai-Hua; Chen, Xiu-Bo; Yang, Yi-Xian
Sci China Inf Sci, 2019, 62(12): 229501
Keywords: Quantum image; Quantum image encryption; Quantum image representation; Quantum image scrambling; Dual-scrambling
Cite as: Zhu H-H, Chen X-B, Yang Y-X. A quantum image dual-scrambling encryption scheme based on random permutation. Sci China Inf Sci, 2019, 62(12): 229501, doi: 10.1007/s11432-018-1514-y

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Spin-valve magnetoresistance in single-phase epsilon-Fe2∼3N film
Tao, Zhikuo; Xu, Lilei; Fang, Henan; Chen, Lin; Chen, Jiangwei
Sci China Inf Sci, 2019, 62(12): 229402
Keywords: magneto-transport; spin-valve magnetoresistance; iron nitrides; spintronics devices; magnetron sputtering method
Cite as: Tao Z K, Xu L L, Fang H N, et al. Spin-valve magnetoresistance in single-phase epsilon-Fe2∼3N film. Sci China Inf Sci, 2019, 62(12): 229402, doi: 10.1007/s11432-019-2686-6

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Investigation of NbOx-based volatile switching device with self-rectifying characteristics
Fang, Yichen; Wang, Zongwei; Cheng, Caidie; Yu, Zhizhen; Zhang, Teng; Yang, Yuchao; Cai, Yimao; Huang, Ru
Sci China Inf Sci, 2019, 62(12): 229401
Keywords: selector; nonlinearity; niobium; self-rectifying; volatile
Cite as: Fang Y C, Wang Z W, Cheng C D, et al. Investigation of NbOx-based volatile switching device with self-rectifying characteristics. Sci China Inf Sci, 2019, 62(12): 229401, doi: 10.1007/s11432-019-9894-0

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Design for reliability with the advanced integrated circuit (IC) technology: challenges and opportunities
Ji, Zhigang; Chen, Haibao; Li, Xiuyan
Sci China Inf Sci, 2019, 62(12): 226401
Keywords: Reliability; Variability; CMOS; BTI; Defect; Modelling; Electronic Design Automation
Cite as: Ji Z G, Chen H B, Li X Y. Design for reliability with the advanced integrated circuit (IC) technology: challenges and opportunities. Sci China Inf Sci, 2019, 62(12): 226401, doi: 10.1007/s11432-019-2643-5

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Implementing termination analysis on quantum programming
Liu, Shusen; He, Kan; Duan, Ruanyao
Sci China Inf Sci, 2019, 62(12): 222501
Keywords: termination analysis; quantum while-language; quantum programming; quantum experiment; terminating steps
Cite as: Liu S S, He K, Duan R Y. Implementing termination analysis on quantum programming. Sci China Inf Sci, 2019, 62(12): 222501, doi: 10.1007/s11432-018-9847-0

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Total ionizing dose effects on graphene-based charge-trapping memory
Xi, Kai; Bi, Jinshun; Majumdar, Sandip; Li, Bo; Liu, Jing; Xu, Yannan; Liu, Ming
Sci China Inf Sci, 2019, 62(12): 222401
Keywords: graphene; non-volatile memories; radiation; trap-assisted tunneling; leakage current
Cite as: Xi K, Bi J S, Majumdar S, et al. Total ionizing dose effects on graphene-based charge-trapping memory. Sci China Inf Sci, 2019, 62(12): 222401, doi: 10.1007/s11432-018-9799-1

Special Focus on Two-Dimensional Materials and Device Applications
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Chemical vapor deposition synthesis of two-dimensional freestanding transition metal oxychloride for electronic applications
Yan, Shengnan; Wang, Pengfei; Wang, Chen-Yu; Xu, Tao; Li, Zhuan; Cao, Tianjun; Chen, Moyu; Pan, Chen; Cheng, Bin; Sun, Litao; Liang, Shi-Jun; Miao, Feng
Sci China Inf Sci, 2019, 62(12): 220407
Keywords: transition metal oxychlorides; chemical vapor deposition; freestanding; memristive device; neuromorphic computing
Cite as: Yan S N, Wang P F, Wang C-Y, et al. Chemical vapor deposition synthesis of two-dimensional freestanding transition metal oxychloride for electronic applications. Sci China Inf Sci, 2019, 62(12): 220407, doi: 10.1007/s11432-019-2653-9

Special Focus on Two-Dimensional Materials and Device Applications
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Nonlinear photoresponse of metallic graphene-like VSe2 ultrathin nanosheets for pulse laser generation
Wang, Tao; Shi, Xinyao; Wang, Jin; Xu, Yijun; Chen, Jie; Dong, Zhuo; Jiang, Man; Ma, Pengfei; Su, Rongtao; Ma, Yanxing; Wu, Jian; Zhang, Kai; Zhou, Pu
Sci China Inf Sci, 2019, 62(12): 220406
Keywords: transition metal dichalcogenides; VSe2; saturable absorber; pulse laser; fiber laser
Cite as: Wang T, Shi X Y, Wang J, et al. Nonlinear photoresponse of metallic graphene-like VSe2 ultrathin nanosheets for pulse laser generation. Sci China Inf Sci, 2019, 62(12): 220406, doi: 10.1007/s11432-019-2677-9

Special Focus on Two-Dimensional Materials and Device Applications
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A study on ionic gated MoS2 phototransistors
Wu, Binmin; Wang, Xudong; Tang, Hongwei; Lin, Tie; Shen, Hong; Hu, Weida; Meng, Xiangjian; Bao, Wenzhong; Wang, Jianlu; Chu, Junhao
Sci China Inf Sci, 2019, 62(12): 220405
Keywords: MoS2 phototransistor; electrolyte-gel gating; Schottky barrier; electric double layer; two-dimensional materials
Cite as: Wu B M, Wang X D, Tang H W, et al. A study on ionic gated MoS2 phototransistors. Sci China Inf Sci, 2019, 62(12): 220405, doi: 10.1007/s11432-019-1472-6

Special Focus on Two-Dimensional Materials and Device Applications
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Nonvolatile memristor based on heterostructure of 2D room-temperature ferroelectric alpha-In2Se3 and WSe2
Yang, Huai; Xiao, Mengqi; Cui, Yu; Pan, Longfei; Zhao, Kai; Wei, Zhongming
Sci China Inf Sci, 2019, 62(12): 220404
Keywords: 2D ferroelectricity; alpha-In2Se3; heterostructure; nonvolatile memristor; polarization
Cite as: Yang H, Xiao M Q, Cui Y, et al. Nonvolatile memristor based on heterostructure of 2D room-temperature ferroelectric alpha-In2Se3 and WSe2. Sci China Inf Sci, 2019, 62(12): 220404, doi: 10.1007/s11432-019-1474-3

Special Focus on Two-Dimensional Materials and Device Applications
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All-carbon hybrids for high-performance electronics, optoelectronics and energy storage
Qin, Shuchao; Liu, Yuanda; Jiang, Hongzhu; Xu, Yongbing; Shi, Yi; Zhang, Rong; Wang, Fengqiu
Sci China Inf Sci, 2019, 62(12): 220403
Keywords: all-carbon hybrids; electronics; optoelectronics; energy storage; graphene; carbon nanotube
Cite as: Qin S C, Liu Y D, Jiang H Z, et al. All-carbon hybrids for high-performance electronics, optoelectronics and energy storage. Sci China Inf Sci, 2019, 62(12): 220403, doi: 10.1007/s11432-019-2676-x

Special Focus on Two-Dimensional Materials and Device Applications
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The emerging ferroic orderings in two dimensions
Zhang, Yupeng; Wang, Hanwen; Li, Feng; Sun, Xingdan; Dong, Baojuan; Li, Xiaoxi; Han, Zheng Vitto; Yang, Teng; Zhang, Han
Sci China Inf Sci, 2019, 62(12): 220402
Keywords: two-dimensional materials; quantum orderings; magnetism; ferroelectricity; nanoelectronics
Cite as: Zhang Y P, Wang H W, Li F, et al. The emerging ferroic orderings in two dimensions. Sci China Inf Sci, 2019, 62(12): 220402, doi: 10.1007/s11432-019-2642-6

Special Focus on Two-Dimensional Materials and Device Applications
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Recent progress in devices and circuits based on wafer-scale transition metal dichalcogenides
Tang, Hongwei; Zhang, Haima; Chen, Xinyu; Wang, Yin; Zhang, Xinzhi; Cai, Puyang; Bao, Wenzhong
Sci China Inf Sci, 2019, 62(12): 220401
Keywords: two-dimensional layered materials; transition metal dichalcogenides; field effect transistors; wafer-scale
Cite as: Tang H W, Zhang H M, Chen X Y, et al. Recent progress in devices and circuits based on wafer-scale transition metal dichalcogenides. Sci China Inf Sci, 2019, 62(12): 220401, doi: 10.1007/s11432-019-2651-x

Special Focus on Two-Dimensional Materials and Device Applications
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Special focus on two-dimensional materials and device applications
Wang, Xinran; Zhou, Peng
Sci China Inf Sci, 2019, 62(12): 220400
Cite as: Wang X R, Zhou P. Special focus on two-dimensional materials and device applications. Sci China Inf Sci, 2019, 62(12): 220400, doi: 10.1007/s11432-019-2696-1

Vol. 62, No. 10, 2019 Cover Contents

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Printed flexible thin-film transistors based on different types of modified liquid metal with good mobility
Li, Qian; Lin, Ju; Liu, Tianying; Zheng, Han; Liu, Jing
Sci China Inf Sci, 2019, 62(10): 202403
Keywords: liquid metal; carbon nanotube; field-effect transistors; printed devices; carrier mobility
Cite as: Li Q, Lin J, Liu T Y, et al. Printed flexible thin-film transistors based on different types of modified liquid metal with good mobility. Sci China Inf Sci, 2019, 62(10): 202403, doi: 10.1007/s11432-019-9918-4

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A flexible skin-mounted wireless acoustic device for bowel sounds monitoring and evaluation
Wang, Fengle; Wu, Dong; Jin, Peng; Zhang, Yingchao; Yang, Yingyun; Ma, Yinji; Yang, Aiming; Fu, Ji; Feng, Xue
Sci China Inf Sci, 2019, 62(10): 202402
Keywords: flexible wearable device; bowel sounds; long-term monitoring; machine learning; intestinal motility
Cite as: Wang F L, Wu D, Jin P, et al. A flexible skin-mounted wireless acoustic device for bowel sounds monitoring and evaluation. Sci China Inf Sci, 2019, 62(10): 202402, doi: 10.1007/s11432-019-9906-1

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Low power and high uniformity of HfOx-based RRAM via tip-enhanced electric fields
Li, Xiaokang; Zhang, Baotong; Wang, Bowen; Xu, Xiaoyan; Yang, Yuancheng; Sun, Shuang; Cai, Qifeng; Hu, Shijie; An, Xia; Li, Ming; Huang, Ru
Sci China Inf Sci, 2019, 62(10): 202401
Keywords: RRAM; pyramid-type electrode; variation; reliability; switching speed; conducting filament
Cite as: Li X K, Zhang B T, Wang B W, et al. Low power and high uniformity of HfOx-based RRAM via tip-enhanced electric fields. Sci China Inf Sci, 2019, 62(10): 202401, doi: 10.1007/s11432-019-9910-x

Vol. 62, No. 9, 2019 Cover Contents

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Keywords: discrete logarithms; primitive element; the Artin-Schreier extension; the Möbius transformation; the Frobenius endomorphism
Cite as: Xiao D Y, Cheng Q. A faster method to compute primitive elements and discrete logarithms of factor base in Artin-Schreier extensions. Sci China Inf Sci, 2019, 62(9): 199501, doi: 10.1007/s11432-017-9700-7

Vol. 62, No. 8, 2019 Cover Contents

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Deep insight into the voltage amplification effect from ferroelectric negative capacitance
Wang, Huimin; Huang, Qianqian; Yang, Mengxuan; Zhang, Xing; Huang, Ru
Sci China Inf Sci, 2019, 62(8): 089401
Keywords: Negative capacitance effect; NCFET; Ferroelectric FET; Ferroelectric dynamics; voltage amplification effect
Cite as: Wang H M, Huang Q Q, Yang M X, et al. Deep insight into the voltage amplification effect from ferroelectric negative capacitance. Sci China Inf Sci, 2019, 62(8): 089401, doi: 10.1007/s11432-019-9885-7

Vol. 62, No. 7, 2019 Cover Contents

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Distinguishing unitary gates on the IBM quantum processor
Liu, Shusen; Li, Yinan; Duan, Runyao
Sci China Inf Sci, 2019, 62(7): 072502
Keywords: quantum experiment; IBM quantum computer; software-aided quantum experiment; sequential schemes for unitary discrimination; parallel schemes for unitary discrimination
Cite as: Liu S S, Li Y N, Duan R Y. Distinguishing unitary gates on the IBM quantum processor. Sci China Inf Sci, 2019, 62(7): 072502, doi: 10.1007/s11432-018-9703-y

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Measurement-device-independent quantum secret sharing and quantum conference based on Gaussian cluster state
Wang, Yu; Tian, Caixing; Su, Qi; Wang, Meihong; Su, Xiaolong
Sci China Inf Sci, 2019, 62(7): 072501
Keywords: measurement-device-independent; cluster state; quantum network; continuous variable; quantum secret sharing
Cite as: Wang Y, Tian C X, Su Q, et al. Measurement-device-independent quantum secret sharing and quantum conference based on Gaussian cluster state. Sci China Inf Sci, 2019, 62(7): 072501, doi: 10.1007/s11432-018-9705-x

Vol. 62, No. 6, 2019 Cover Contents

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A novel compression framework using energy-sensitive QRS complex detection method for a mobile ECG
Wang, Sikai; Pang, Bo; Liu, Ming; Zhang, Xu; Yuan, Fang; Shen, Wentao; Chen, Hongda
Sci China Inf Sci, 2019, 62(6): 069409
Keywords: QRS complex detection; compression sensing; mobile ECG; energy-sensitive; simplified EMD
Cite as: Wang S K, Pang B, Liu M, et al. A novel compression framework using energy-sensitive QRS complex detection method for a mobile ECG. Sci China Inf Sci, 2019, 62(6): 069409, doi: 10.1007/s11432-018-9838-3

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Near-infrared six-band polarization-independent wide-angle absorber based on metal cavity arrays filled with GaAs
Hu, Dan; Wang, Hongyan; Zhang, Xiwei; Wang, Kexin; Zhu, Qiaofen
Sci China Inf Sci, 2019, 62(6): 069408
Keywords: near-infrared; metamaterial; cavity-mode resonances; multiband; absorber
Cite as: Hu D, Wang H Y, Zhang X W, et al. Near-infrared six-band polarization-independent wide-angle absorber based on metal cavity arrays filled with GaAs. Sci China Inf Sci, 2019, 62(6): 069408, doi: 10.1007/s11432-018-9775-0

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Physical mechanism of performance adjustment in selective buried oxide n-MOSFETs
Huang, Qin; Liu, Renhua; Sun, Yabin; Li, Xiaojin; Shi, Yanling; Wang, Changfeng; Liao, Duanduan; Tian, Ming
Sci China Inf Sci, 2019, 62(6): 069407
Keywords: FDSOI; selective buied oxide; SELBOX; self-heating effect; BOX window; position; performance adjustment
Cite as: Huang Q, Liu R H, Sun Y B, et al. Physical mechanism of performance adjustment in selective buried oxide n-MOSFETs. Sci China Inf Sci, 2019, 62(6): 069407, doi: 10.1007/s11432-018-9791-2

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A high-efficiency, high harmonic rejection E-band SiGe HBT frequency tripler for high-resolution radar application
Zhou, Peigen; Yan, Pinpin; Chen, Jixin; Hou, Debin; Hong, Wei
Sci China Inf Sci, 2019, 62(6): 069406
Keywords: E-band; Frequency Tripler; Harmonic rejection; Power enhancing technique; SiGe; Temperature compensation
Cite as: Zhou P G, Yan P P, Chen J X, et al. A high-efficiency, high harmonic rejection E-band SiGe HBT frequency tripler for high-resolution radar application. Sci China Inf Sci, 2019, 62(6): 069406, doi: 10.1007/s11432-018-9665-1

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A physical channel-potential and drain-current model for asymmetric dual-gate a-IGZO TFTs
Cai, Minxi; Yao, Ruohe
Sci China Inf Sci, 2019, 62(6): 069405
Keywords: amorphous InGaZnO; thin-film transistors; asymmetric dual-gate; non-charge-sheet model; physical model
Cite as: Cai M X, Yao R H. A physical channel-potential and drain-current model for asymmetric dual-gate a-IGZO TFTs. Sci China Inf Sci, 2019, 62(6): 069405, doi: 10.1007/s11432-018-9659-0

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Single-event upset prediction in static random access memory cell account for parameter variations
Huo, Mingxue; Ma, Guoliang; Zhou, Bin; Xiao, Liyi; Qi, Chunhua; Zhang, Yanqing; Ma, Jianning; Piao, Yinghun; Wang, Tianqi
Sci China Inf Sci, 2019, 62(6): 069404
Keywords: Parameter variation; Single event upset; SEU cross section; TCAD; SRAM
Cite as: Huo M X, Ma G L, Zhou B, et al. Single-event upset prediction in static random access memory cell account for parameter variations. Sci China Inf Sci, 2019, 62(6): 069404, doi: 10.1007/s11432-018-9561-9

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Comparison of the dark signal degradation induced by Gamma ray, proton, and neutron radiation in pinned photodiode CMOS image sensors
Wang, Zujun; Xue, Yuanyuan; Chen, Wei; Xu, Rui; Ning, Hao; He, Baoping; Yao, Zhibin; Liu, Minbo; Sheng, Jiangkun; Ma, Wuying; Dong, Guantao
Sci China Inf Sci, 2019, 62(6): 069403
Keywords: CMOS image sensors; CISs; Total ionizing dose; Proton radiation; Neutron radiation; Dark signal degradation distribution
Cite as: Wang Z J, Xue Y Y, Chen W, et al. Comparison of the dark signal degradation induced by Gamma ray, proton, and neutron radiation in pinned photodiode CMOS image sensors. Sci China Inf Sci, 2019, 62(6): 069403, doi: 10.1007/s11432-018-9554-4

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Dependency of well-contact density on MCUs in 65-nm bulk CMOS SRAM
Xie, Cheng; Chen, Yueyue; Chen, Jianjun; Zhang, Jizuo
Sci China Inf Sci, 2019, 62(6): 069402
Keywords: CMOS; Static random access memories; SRAM; well contact; multiple cell upsets; MCU; heavy particle radiation
Cite as: Xie C, Chen Y Y, Chen J J, et al. Dependency of well-contact density on MCUs in 65-nm bulk CMOS SRAM. Sci China Inf Sci, 2019, 62(6): 069402, doi: 10.1007/s11432-017-9549-8

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High-speed target tracking system based on multi-interconnection heterogeneous processor and multi-descriptor algorithm
Wang, Jiaqing; Yang, Yongxing; Liu, Liyuan; Wu, Nanjian
Sci China Inf Sci, 2019, 62(6): 069401
Keywords: target tracking; multi-descriptor; vision processor architecture; multi-interconnection; high-speed
Cite as: Wang J Q, Yang Y X, Liu L Y, et al. High-speed target tracking system based on multi-interconnection heterogeneous processor and multi-descriptor algorithm. Sci China Inf Sci, 2019, 62(6): 069401, doi: 10.1007/s11432-017-9406-0

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International Solid-State Circuits Conference 2019 aims at "envisioning the future"
Jia, Haikun; Chi, Baoyong
Sci China Inf Sci, 2019, 62(6): 067401
Cite as: Jia H K, Chi B Y. International Solid-State Circuits Conference 2019 aims at "envisioning the future". Sci China Inf Sci, 2019, 62(6): 067401, doi: 10.1007/s11432-019-9873-x

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Circuit design of RRAM-based neuromorphic hardware systems for classification and modified Hebbian learning
Jiang, Yuning; Huang, Peng; Zhou, Zheng; Kang, Jinfeng
Sci China Inf Sci, 2019, 62(6): 062408
Keywords: RRAM; neuromorphic system; neuron circuits; Hebbian learning; pattern classification
Cite as: Jiang Y N, Huang P, Zhou Z, et al. Circuit design of RRAM-based neuromorphic hardware systems for classification and modified Hebbian learning. Sci China Inf Sci, 2019, 62(6): 062408, doi: 10.1007/s11432-018-9863-6

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64 × 64 GM-APD array-based readout integrated circuit for 3D imaging applications
Wu, Jin; Qian, Zhiming; Zhao, Yang; Yu, Xiangrong; Zheng, Lixia; Sun, Weifeng
Sci China Inf Sci, 2019, 62(6): 062407
Keywords: single photon detection; avalanche photodiode; readout integrated circuit; time-to-digital converter; ranging imaging application
Cite as: Wu J, Qian Z M, Zhao Y, et al. 64 × 64 GM-APD array-based readout integrated circuit for 3D imaging applications. Sci China Inf Sci, 2019, 62(6): 062407, doi: 10.1007/s11432-018-9712-7

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Systematic calibration of drift diffusion model for InGaAs MOSFETs in quasi-ballistic regime
Di, Shaoyan; Shen, Lei; Chang, Pengying; Zhao, Kai; Lu, Tiao; Du, Gang; Liu, Xiaoyan
Sci China Inf Sci, 2019, 62(6): 062406
Keywords: drift-diffusion model; calibration; Boltzmann transport equation; BTE; ballistic transport; high field; InGaAs MOSFET
Cite as: Di S Y, Shen L, Chang P Y, et al. Systematic calibration of drift diffusion model for InGaAs MOSFETs in quasi-ballistic regime. Sci China Inf Sci, 2019, 62(6): 062406, doi: 10.1007/s11432-017-9472-x

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A 0.45-to-1.8 GHz synthesized injection-locked bang-bang phase locked loop with fine frequency tuning circuits
Yang, Jincheng; Zhang, Zhao; Qi, Nan; Liu, Liyuan; Liu, Jian; Wu, Nanjian
Sci China Inf Sci, 2019, 62(6): 062405
Keywords: synthesized all-digital phased-locked loops; ADPLL; bang-bang phased-locked loop; BBPLL; automatically placed and routed; APR; output feedback DAC; OFDAC; injection-locked
Cite as: Yang J C, Zhang Z, Qi N, et al. A 0.45-to-1.8 GHz synthesized injection-locked bang-bang phase locked loop with fine frequency tuning circuits. Sci China Inf Sci, 2019, 62(6): 062405, doi: 10.1007/s11432-018-9423-y

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Short-channel effects on the static noise margin of 6T SRAM composed of 2D semiconductor MOSFETs
Xie, Qian; Chen, Chen; Liu, Mingjun; Xia, Shuang; Wang, Zheng
Sci China Inf Sci, 2019, 62(6): 062404
Keywords: 2D semiconductor; model; SNM; SCEs; SRAM
Cite as: Xie Q, Chen C, Liu M J, et al. Short-channel effects on the static noise margin of 6T SRAM composed of 2D semiconductor MOSFETs. Sci China Inf Sci, 2019, 62(6): 062404, doi: 10.1007/s11432-018-9429-2

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Simulation of a high-performance enhancement-mode HFET with back-to-back graded AlGaN layers
Peng, Fu; Yang, Chao; Deng, Siyu; Ouyang, Dongya; Zhang, Bo; Wei, Jie; Luo, Xiaorong
Sci China Inf Sci, 2019, 62(6): 062403
Keywords: graded AlGaN; 3DHG-3DEG; large on-state current; high voltage; enhancement mode
Cite as: Peng F, Yang C, Deng S Y, et al. Simulation of a high-performance enhancement-mode HFET with back-to-back graded AlGaN layers. Sci China Inf Sci, 2019, 62(6): 062403, doi: 10.1007/s11432-018-9503-9

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Improved turn-on behavior in a diode-triggered silicon-controlled rectifier for high-speed electrostatic discharge protection
Zhang, Lizhong; Wang, Yuan; Wang, Yize; Zhang, Xing; He, Yandong
Sci China Inf Sci, 2019, 62(6): 062402
Keywords: diode triggered silicon controlled rectifier; DTSCR; electrostatic discharge; ESD; transmission line pulsing; TLP; very fast transmission line pulsing; VF-TLP; turn-on behavior
Cite as: Zhang L Z, Wang Y, Wang Y Z, et al. Improved turn-on behavior in a diode-triggered silicon-controlled rectifier for high-speed electrostatic discharge protection. Sci China Inf Sci, 2019, 62(6): 062402, doi: 10.1007/s11432-017-9427-1

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Error correction for short-range optical interconnect using COTS transceivers
Zheng, Ziyuan; Yang, Chuanchuan; Zhao, Dan; Wang, Ziyu
Sci China Inf Sci, 2019, 62(6): 062401
Keywords: short-range optical interconnect; vertical cavity surface emitting laser; VCSEL; ethernet; application layer adaptive forward error correction; commercial off-the-shelf optical transceiver
Cite as: Zheng Z Y, Yang C C, Zhao D, et al. Error correction for short-range optical interconnect using COTS transceivers. Sci China Inf Sci, 2019, 62(6): 062401, doi: 10.1007/s11432-018-9392-x

REVIEW Website SpringerLink Google Scholar Cited in SCI: 0

Advances in narrow linewidth diode lasers
Lang, Xingkai; Jia, Peng; Chen, Yongyi; Qin, Li; Liang, Lei; Chen, Chao; Wang, Yubing; Shan, Xiaonan; Ning, Yongqiang; Wang, Lijun
Sci China Inf Sci, 2019, 62(6): 061401
Keywords: diode lasers; narrow linewidth; internal cavity optical feedback technology; external cavity optical feedback technology; solid-state lidar
Cite as: Lang X K, Jia P, Chen Y Y, et al. Advances in narrow linewidth diode lasers. Sci China Inf Sci, 2019, 62(6): 061401, doi: 10.1007/s11432-019-9870-0

REVIEW Website SpringerLink Google Scholar Cited in SCI: 1

DNA computing for combinational logic
Zhang, Chuan; Ge, Lulu; Zhuang, Yuchen; Shen, Ziyuan; Zhong, Zhiwei; Zhang, Zaichen; You, Xiaohu
Sci China Inf Sci, 2019, 62(6): 061301
Keywords: synthetic biology; DNA computing; DNA strand displacement reactions; chemical reaction networks; combinational logic
Cite as: Zhang C, Ge L L, Zhuang Y C, et al. DNA computing for combinational logic. Sci China Inf Sci, 2019, 62(6): 061301, doi: 10.1007/s11432-018-9530-x

Vol. 62, No. 4, 2019 Cover Contents

RESEARCH PAPER Website SpringerLink Google Scholar Cited in SCI: 1

Modeling of program Vth distribution for 3-D TLC NAND flash memory
Wang, Kunliang; Du, Gang; Lun, Zhiyuan; Chen, Wangyong; Liu, Xiaoyan
Sci China Inf Sci, 2019, 62(4): 042401
Keywords: modeling and simulation; measurement; reliability; program Vth distribution; charge-trapping memory; 3-D vertical channel TLC; QLC NAND flash memory
Cite as: Wang K L, Du G, Lun Z Y, et al. Modeling of program Vth distribution for 3-D TLC NAND flash memory. Sci China Inf Sci, 2019, 62(4): 042401, doi: 10.1007/s11432-018-9490-1

Vol. 62, No. 2, 2019 Cover Contents

RESEARCH PAPER Website SpringerLink Google Scholar Cited in SCI: 1

Quantum cryptanalysis on some generalized Feistel schemes
Dong, Xiaoyang; Li, Zheng; Wang, Xiaoyun
Sci China Inf Sci, 2019, 62(2): 022501
Keywords: generalized Feistel schemes; Simon; Grover; quantum key-recovery; quantum cryptanalysis
Cite as: Dong X Y, Li Z, Wang X Y. Quantum cryptanalysis on some generalized Feistel schemes. Sci China Inf Sci, 2019, 62(2): 022501, doi: 10.1007/s11432-017-9436-7

RESEARCH PAPER Website SpringerLink Google Scholar Cited in SCI: 0

Efficient evaluation model including interconnect resistance effect for large scale RRAM crossbar array matrix computing
Han, Runze; Huang, Peng; Zhao, Yudi; Cui, Xiaole; Liu, Xiaoyan; Kang, Jinfeng
Sci China Inf Sci, 2019, 62(2): 022401
Keywords: crossbar array; evaluation model; interconnect resistance; matrix-vector multiplication; RRAM
Cite as: Han R Z, Huang P, Zhao Y D, et al. Efficient evaluation model including interconnect resistance effect for large scale RRAM crossbar array matrix computing. Sci China Inf Sci, 2019, 62(2): 022401, doi: 10.1007/s11432-018-9555-8

Vol. 62, No. 1, 2019 Cover Contents

RESEARCH PAPER Website SpringerLink Google Scholar Cited in SCI: 1

Efficient quantum state transmission via perfect quantum network coding
Li, Zhen-Zhen; Xu, Gang; Chen, Xiu-Bo; Qu, Zhiguo; Niu, Xin-Xin; Yang, Yi-Xian
Sci China Inf Sci, 2019, 62(1): 012501
Keywords: perfect quantum network coding; quantum k-pair problem; efficient quantum state transmission; communication efficiency; achievable rate region
Cite as: Li Z-Z, Xu G, Chen X-B, et al. Efficient quantum state transmission via perfect quantum network coding. Sci China Inf Sci, 2019, 62(1): 012501, doi: 10.1007/s11432-018-9592-9