信息器件 电路和系统 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 13

A robust QRS detection and accurate R-peak identification algorithm for wearable ECG sensors
Zhao, Kai; Li, Yongfu; Wang, Guoxing; Pu, Yu; Lian, Yong
Sci China Inf Sci, 2021, 64(8): 182401
Keywords: signal processing; qrs detection; r-peak detection; wearable ecg sensors; bilateral threshold
Cite as: Zhao K, Li Y F, Wang G X, et al. A robust QRS detection and accurate R-peak identification algorithm for wearable ECG sensors. Sci China Inf Sci, 2021, 64(8): 182401, doi: 10.1007/s11432-020-3150-2

信息器件 电路和系统 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 7

Detection of the interictal epileptic discharges based on wavelet bispectrum interaction and recurrent neural network
Sabor, Nabil; Li, Yongfu; Zhang, Zhe; Pu, Yu; Wang, Guoxing; Lian, Yong
Sci China Inf Sci, 2021, 64(6): 162403
Keywords: interictal epileptic discharges; epilepsy; discrete wavelet transform; wavelet bispectrum; long short-term memory; recurrent neural network
Cite as: Sabor N, Li Y F, Zhang Z, et al. Detection of the interictal epileptic discharges based on wavelet bispectrum interaction and recurrent neural network. Sci China Inf Sci, 2021, 64(6): 162403, doi: 10.1007/s11432-020-3100-8

Special Focus on Brain Machine Interfaces and Applications
信息器件 电路和系统 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 6

Hybrid spiking neural network for sleep electroencephalogram signals
Jia, Ziyu; Ji, Junyu; Zhou, Xinliang; Zhou, Yuhan
Sci China Inf Sci, 2022, 65(4): 140403
Keywords: spiking neural network; electroencephalogram signals; sleep staging
Cite as: Jia Z Y, Ji J Y, Zhou X L, et al. Hybrid spiking neural network for sleep electroencephalogram signals. Sci China Inf Sci, 2022, 65(4): 140403, doi: 10.1007/s11432-021-3380-1

信息器件 电路和系统 LETTER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 3

Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design
Wang, Jianjian; Bi, Jinshun; Liu, Gang; Bai, Hua; Xi, Kai; Li, Bo; Majumdar, Sandip; Ji, Lanlong; Liu, Ming; Zhang, Zhangang
Sci China Inf Sci, 2021, 64(4): 149401
Keywords: see; nvsram; hf0.5zr0.5o2; ferroelectric capacitor; let; remnant polarization; coercive voltage
Cite as: Wang J J, Bi J S, Liu G, et al. Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design. Sci China Inf Sci, 2021, 64(4): 149401, doi: 10.1007/s11432-019-2854-9

信息器件 电路和系统 LETTER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

Self-compensation tensor multiplication unit for adaptive approximate computing in low-power CNN processing
Liu, Bo; Zhang, Zilong; Cai, Hao; Zhang, Reyuan; Wang, Zhen; Yang, Jun
Sci China Inf Sci, 2022, 65(4): 149403
Keywords: approximate multiplication; tensor multiplication unit; convolutional neural network; self-compensation; addition tree
Cite as: Liu B, Zhang Z L, Cai H, et al. Self-compensation tensor multiplication unit for adaptive approximate computing in low-power CNN processing. Sci China Inf Sci, 2022, 65(4): 149403, doi: 10.1007/s11432-021-3242-6

信息器件 电路和系统 LETTER Webpage Webpage-cn SpringerLink Google Scholar Supplementary Cited in SCI: 1

A variable threshold visual sensing and image reconstruction method based on pulse sequence
Xu, Jiangtao; Lin, Peng; Gao, Zhiyuan; Nie, Kaiming; Xu, Liang
Sci China Inf Sci, 2022, 65(2): 129401
Keywords: pulse sequence; variable threshold; image reconstruction; visual sensing; adaptive video reconstruction
Cite as: Xu J T, Lin P, Gao Z Y, et al. A variable threshold visual sensing and image reconstruction method based on pulse sequence. Sci China Inf Sci, 2022, 65(2): 129401, doi: 10.1007/s11432-020-3003-2

信息器件 电路和系统 LETTER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

E-band transceiver monolithic microwave integrated circuit in a waveguide package for millimeter-wave radio channel emulation applications
Wang, Chen; Hou, Debin; Zheng, Sidou; Chen, Jixin; Zhang, Nianzu; Jiang, Zhengbo; Hong, Wei
Sci China Inf Sci, 2022, 65(2): 129404
Keywords: mmic; millimeter-wave; transceiver; microstrip-to-waveguide transition; e-band; radio channel emulator
Cite as: Wang C, Hou D B, Zheng S D, et al. E-band transceiver monolithic microwave integrated circuit in a waveguide package for millimeter-wave radio channel emulation applications. Sci China Inf Sci, 2022, 65(2): 129404, doi: 10.1007/s11432-020-3124-1

Special Focus on Brain Machine Interfaces and Applications
信息器件 电路和系统 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

A 124 dB dynamic range sigma-delta modulator applied to non-invasive EEG acquisition using chopper-modulated input-scaling-down technique
Chen, Kaiquan; Chen, Mingyi; Cheng, Longlong; Qi, Liang; Wang, Guoxing; Lian, Yong
Sci China Inf Sci, 2022, 65(4): 140402
Keywords: analog-to-digital converter; adc; σ∆ modulator; brain computer interface; bci; electroencephalogram; eeg; dynamic range; dr; motion artifacts; ma
Cite as: Chen K Q, Chen M Y, Cheng L L, et al. A 124 dB dynamic range sigma-delta modulator applied to non-invasive EEG acquisition using chopper-modulated input-scaling-down technique. Sci China Inf Sci, 2022, 65(4): 140402, doi: 10.1007/s11432-021-3401-6

Special Focus on Brain Machine Interfaces and Applications
信息器件 电路和系统 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

Multi-channel EEG-based emotion recognition in the presence of noisy labels
Li, Chang; Hou, Yimeng; Song, Rencheng; Cheng, Juan; Liu, Yu; Chen, Xun
Sci China Inf Sci, 2022, 65(4): 140405
Keywords: electroencephalogram; eeg; emotion recognition; noisy labels; capsule network; joint optimization
Cite as: Li C, Hou Y M, Song R C, et al. Multi-channel EEG-based emotion recognition in the presence of noisy labels. Sci China Inf Sci, 2022, 65(4): 140405, doi: 10.1007/s11432-021-3439-2

信息器件 电路和系统 LETTER Webpage Webpage-cn SpringerLink Google Scholar Supplementary Cited in SCI: 0

Reconfigurable logic circuit design for stateful Boolean logic computing
Luo, Li; Dong, Zhekang; Hu, Xiaofang; Wang, Lidan; Duan, Shukai
Sci China Inf Sci, 2021, 64(8): 189401
Keywords: memristor; reconfigurable logic circuit; stateful boolean logic; logic design; logic circuit
Cite as: Luo L, Dong Z K, Hu X F, et al. Reconfigurable logic circuit design for stateful Boolean logic computing. Sci China Inf Sci, 2021, 64(8): 189401, doi: 10.1007/s11432-019-2938-8

信息器件 电路和系统 LETTER Webpage Webpage-cn SpringerLink Google Scholar Supplementary Cited in SCI: 0

Fast substitution-box evaluation algorithm and its efficient masking scheme for block ciphers
Huang, Hai; Liu, Leibo; Zhu, Min; Yin, Shouyi; Wei, Shaojun
Sci China Inf Sci, 2021, 64(8): 189402
Keywords: higher-order masking; hardware security; block ciphers; power function evaluation; substitution-box
Cite as: Huang H, Liu L B, Zhu M, et al. Fast substitution-box evaluation algorithm and its efficient masking scheme for block ciphers. Sci China Inf Sci, 2021, 64(8): 189402, doi: 10.1007/s11432-020-3089-9

信息器件 电路和系统 LETTER Webpage Webpage-cn SpringerLink Google Scholar Supplementary Cited in SCI: 0

A physics-based electromigration reliability model for interconnects lifetime prediction
Cai, Linlin; Chen, Wangyong; Kang, Jinfeng; Du, Gang; Liu, Xiaoyan; Zhang, Xing
Sci China Inf Sci, 2021, 64(11): 219404
Keywords: electromigration; modeling; interconnects; time-to-failure; reliability
Cite as: Cai L L, Chen W Y, Kang J F, et al. A physics-based electromigration reliability model for interconnects lifetime prediction. Sci China Inf Sci, 2021, 64(11): 219404, doi: 10.1007/s11432-020-3140-4

信息器件 电路和系统 LETTER Webpage Webpage-cn SpringerLink Google Scholar Supplementary Cited in SCI: 0

Implementation of a concentration-controlled chemical clock
Fang, Chongzhou; Ge, Lulu; Tan, Xiaosi; Shen, Ziyuan; Zhang, Zaichen; You, Xiaohu; Zhang, Chuan
Sci China Inf Sci, 2021, 64(12): 229401
Keywords: chemical clock; dna strand displacement; mass action kinetics; molecular computing; concentration
Cite as: Fang C Z, Ge L L, Tan X S, et al. Implementation of a concentration-controlled chemical clock. Sci China Inf Sci, 2021, 64(12): 229401, doi: 10.1007/s11432-019-2868-6

信息器件 电路和系统 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

A neuromorphic core based on threshold switching memristor with asynchronous address event representation circuits
Wei, Jinsong; Zhang, Jilin; Zhang, Xumeng; Wu, Zuheng; Wang, Rui; Lu, Jian; Shi, Tuo; Chan, Mansun; Liu, Qi; Chen, Hong
Sci China Inf Sci, 2022, 65(2): 122408
Keywords: leaky-integration-and-fire; lif; memristor; threshold switching; artificial neuron; aer circuits; asynchronous circuits; on-chip communication
Cite as: Wei J S, Zhang J L, Zhang X M, et al. A neuromorphic core based on threshold switching memristor with asynchronous address event representation circuits. Sci China Inf Sci, 2022, 65(2): 122408, doi: 10.1007/s11432-020-3203-0

信息器件 电路和系统 LETTER Webpage Webpage-cn SpringerLink Google Scholar Supplementary Cited in SCI: 0

SEU sensitivity and large spacing TMR efficiency of Kintex-7 and Virtex-7 FPGAs
Cai, Chang; Ning, Bingxu; Fan, Xue; Liu, Tianqi; Ke, Lingyun; Chen, Gengsheng; Yu, Jian; He, Ze; Xu, Liewei; Liu, Jie
Sci China Inf Sci, 2022, 65(2): 129402
Keywords: microelectronics; radiation effects; space electronics; radiation tolerance; fpga; reliability
Cite as: Cai C, Ning B X, Fan X, et al. SEU sensitivity and large spacing TMR efficiency of Kintex-7 and Virtex-7 FPGAs. Sci China Inf Sci, 2022, 65(2): 129402, doi: 10.1007/s11432-020-3169-x

Special Focus on Brain Machine Interfaces and Applications
信息器件 电路和系统 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

SSVEP-based brain-computer interfaces are vulnerable to square wave attacks
Bian, Rui; Meng, Lubin; Wu, Dongrui
Sci China Inf Sci, 2022, 65(4): 140406
Keywords: electroencephalogram; brain-computer interface; steady-state visual evoked potential; adversarial attack
Cite as: Bian R, Meng L B, Wu D R. SSVEP-based brain-computer interfaces are vulnerable to square wave attacks. Sci China Inf Sci, 2022, 65(4): 140406, doi: 10.1007/s11432-022-3440-5

信息器件 电路和系统 LETTER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

A centripetal collection image sensor (CCIS) based on back gate modulation achieving 1T submicron pixel
Liu, Liqiao; Yu, Guihai; Du, Gang; Liu, Xiaoyan
Sci China Inf Sci, 2022, 65(4): 149401
Keywords: image sensor; submicron pixel; back gate modulation; pixel crosstalk; silicon on insulator
Cite as: Liu L Q, Yu G H, Du G, et al. A centripetal collection image sensor (CCIS) based on back gate modulation achieving 1T submicron pixel. Sci China Inf Sci, 2022, 65(4): 149401, doi: 10.1007/s11432-020-2933-y

信息器件 电路和系统 LETTER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

A SiGe W-band frequency tripler with 10.5 dBm output power using harmonic suppression technique
Li, Huanbo; Chen, Jixin; Zhou, Peigen; Hou, Debin; Hong, Wei
Sci China Inf Sci, 2022, 65(4): 149402
Keywords: sige; w-band; frequency triper; harmonic suppression; transforming
Cite as: Li H B, Chen J X, Zhou P G, et al. A SiGe W-band frequency tripler with 10.5 dBm output power using harmonic suppression technique. Sci China Inf Sci, 2022, 65(4): 149402, doi: 10.1007/s11432-020-3041-5

信息器件 电路和系统 LETTER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

An energy-efficient dynamically reconfigurable cryptographic engine with improved power/EM-side-channel-attack resistance
Deng, Chenchen; Zhu, Min; Yang, Jinjiang; Wu, Youyu; He, Jiaji; Yang, Bohan; Zhu, Jianfeng; Yin, Shouyi; Wei, Shaojun; Liu, Leibo
Sci China Inf Sci, 2022, 65(4): 149404
Keywords: reconfigurable architectures; energy efficiency; cryptographic accelerator; flexibility; side channel analysis
Cite as: Deng C C, Zhu M, Yang J J, et al. An energy-efficient dynamically reconfigurable cryptographic engine with improved power/EM-side-channel-attack resistance. Sci China Inf Sci, 2022, 65(4): 149404, doi: 10.1007/s11432-020-3206-2

信息器件 电路和系统 LETTER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

High efficiency dual-band filtering power amplifier
Li, Yuanchun; Wang, Yuanbo; Wu, Disi; Zhan, Runze; Chen, Shichang; Xue, Quan
Sci China Inf Sci, 2022, 65(8): 189401
Keywords: dual-band; filtering; high efficiency; power amplifier; pa; power added efficiency; pae
Cite as: Li Y C, Wang Y B, Wu D S, et al. High efficiency dual-band filtering power amplifier. Sci China Inf Sci, 2022, 65(8): 189401, doi: 10.1007/s11432-021-3315-y

信息器件 电路和系统 NEWS & VIEWS Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

CircuitNet: an open-source dataset for machine learning applications in electronic design automation (EDA)
Chai, Zhuomin; Zhao, Yuxiang; Lin, Yibo; Liu, Wei; Wang, Runsheng; Huang, Ru
Sci China Inf Sci, 2022, 65(12): 227401
Keywords: EDA; VLSI CAD; Physical Design; Machine Learning; Routability; IR Drop
Cite as: Chai Z M, Zhao Y X, Lin Y B, et al. CircuitNet: an open-source dataset for machine learning applications in electronic design automation (EDA). Sci China Inf Sci, 2022, 65(12): 227401, doi: 10.1007/s11432-022-3571-8

信息器件 电路和系统 LETTER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

A Ka-band calibratable phased-array front-end chip with high element-consistency
Sun, Shiyan; Li, An'an; Ding, Yingtao; Chen, Zipeng; Wang, Wei; Jiang, Sijia; Chen, Zhiming; Chi, Baoyong
Sci China Inf Sci, 2022, 65(12): 229401
Keywords: Phased-array; phase shifter; attenuator; power amplifier; CMOS; transmit front-end module
Cite as: Sun S Y, Li A A, Ding Y T, et al. A Ka-band calibratable phased-array front-end chip with high element-consistency. Sci China Inf Sci, 2022, 65(12): 229401, doi: 10.1007/s11432-020-3376-7

信息器件 电路和系统 LETTER Webpage Webpage-cn SpringerLink Google Scholar Supplementary Cited in SCI: 0

An efficient path delay variability model for wide-voltage-range digital circuits
Shan, Weiwei; Cui, Yuqiang; Dai, Wentao; Liu, Xinning; Guo, Jingjing; Cao, Peng; Yang, Jun
Sci China Inf Sci, 2023, 66(2): 129401
Keywords: modeling; PVT variations; delay variability; digital integrated circuit; FO4 inverter chain
Cite as: Shan W W, Cui Y Q, Dai W T, et al. An efficient path delay variability model for wide-voltage-range digital circuits. Sci China Inf Sci, 2023, 66(2): 129401, doi: 10.1007/s11432-021-3407-2

信息器件 MEMS RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 10

Resolution limit of mode-localised sensors
Zhang, Zhao; Chang, Honglong
Sci China Inf Sci, 2021, 64(4): 142401
Keywords: mems; mode-localised sensors; resolution limit; 2-degree-of-freedom; higher degree-of-freedom
Cite as: Zhang Z, Chang H L. Resolution limit of mode-localised sensors. Sci China Inf Sci, 2021, 64(4): 142401, doi: 10.1007/s11432-020-2974-9

信息器件 MEMS RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Supplementary Cited in SCI: 7

A high-efficient triboelectric-electromagnetic hybrid nanogenerator for vibration energy harvesting and wireless monitoring
He, Jian; Fan, Xueming; Zhao, Dongyang; Cui, Min; Han, Bing; Hou, Xiaojuan; Chou, Xiujian
Sci China Inf Sci, 2022, 65(4): 142401
Keywords: mechanical vibration energy; spring structure; triboelectric; electromagnetic; wireless monitoring system
Cite as: He J, Fan X M, Zhao D Y, et al. A high-efficient triboelectric-electromagnetic hybrid nanogenerator for vibration energy harvesting and wireless monitoring. Sci China Inf Sci, 2022, 65(4): 142401, doi: 10.1007/s11432-020-3081-4

信息器件 MEMS RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Supplementary Cited in SCI: 6

A non-contact flexible pyroelectric sensor for wireless physiological monitoring system
He, Jian; Li, Sen; Hou, Xiaojuan; Zhou, Yongjun; Li, Hao; Cui, Min; Guo, Tao; Wang, Xiangdong; Mu, Jiliang; Geng, Wenping; Chou, Xiujian
Sci China Inf Sci, 2022, 65(2): 122402
Keywords: non-contact; pyroelectric generator; human body heat; environmental thermal energy; wireless monitoring system
Cite as: He J, Li S, Hou X J, et al. A non-contact flexible pyroelectric sensor for wireless physiological monitoring system. Sci China Inf Sci, 2022, 65(2): 122402, doi: 10.1007/s11432-020-3175-6

信息器件 MEMS RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 6

Mode-localized accelerometer with ultrahigh sensitivity
Kang, Hao; Ruan, Bing; Hao, Yongcun; Chang, Honglong
Sci China Inf Sci, 2022, 65(4): 142402
Keywords: mode localization; weakly coupled resonators; accelerometer; degree-of-freedom; microelectromechanical system
Cite as: Kang H, Ruan B, Hao Y C, et al. Mode-localized accelerometer with ultrahigh sensitivity. Sci China Inf Sci, 2022, 65(4): 142402, doi: 10.1007/s11432-020-3057-y

信息器件 MEMS PERSPECTIVE Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 4

Nanomechanics: emerging opportunities for future computing
Wang, Zenghui; Fang, Jiawei; Zhang, Pengcheng; Yang, Rui
Sci China Inf Sci, 2021, 64(10): 206401
Keywords: mems; nems; mechanical computing; logic devices; switches; resonators
Cite as: Wang Z H, Fang J W, Zhang P C, et al. Nanomechanics: emerging opportunities for future computing. Sci China Inf Sci, 2021, 64(10): 206401, doi: 10.1007/s11432-020-3241-9

信息器件 MEMS REVIEW Webpage Webpage-cn SpringerLink Google Scholar Video Cited in SCI: 4

Long-term flexible penetrating neural interfaces: materials, structures, and implantation
Gu, Chi; Jiang, Jianjuan; Tao, Tiger H.; Wei, Xiaoling; Sun, Liuyang
Sci China Inf Sci, 2021, 64(12): 221401
Keywords: neural interface; long-term; flexible; minimally invasive; biocompatibility
Cite as: Gu C, Jiang J J, Tao T H, et al. Long-term flexible penetrating neural interfaces: materials, structures, and implantation. Sci China Inf Sci, 2021, 64(12): 221401, doi: 10.1007/s11432-021-3321-7

Special Focus on Brain Machine Interfaces and Applications
信息器件 MEMS REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

Recent advances in wireless epicortical and intracortical neuronal recording systems
Ji, Bowen; Liang, Zekai; Yuan, Xichen; Xu, Honglai; Wang, Minghao; Yin, Erwei; Guo, Zhejun; Wang, Longchun; Zhou, Yuhao; Feng, Huicheng; Chang, Honglong; Liu, Jingquan
Sci China Inf Sci, 2022, 65(4): 140401
Keywords: wireless implant; neuronal recording system; recording electrodes; processing chips; wireless data transmission; power supply; system-level package
Cite as: Ji B W, Liang Z K, Yuan X C, et al. Recent advances in wireless epicortical and intracortical neuronal recording systems. Sci China Inf Sci, 2022, 65(4): 140401, doi: 10.1007/s11432-021-3373-1

Special Focus on Brain Machine Interfaces and Applications
信息器件 MEMS RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Amplitude-frequency-aware deep fusion network for optimal contact selection on STN-DBS electrodes
Xiao, Linxia; Li, Caizi; Wang, Yanjiang; Si, Weixin; Lin, Hai; Zhang, Doudou; Cai, Xiaodong; Heng, Pheng-Ann
Sci China Inf Sci, 2022, 65(4): 140404
Keywords: optimal contact selection; sweet spots; microelectrode recordings; amplitude-frequency feature; deep fusion network
Cite as: Xiao L X, Li C Z, Wang Y J, et al. Amplitude-frequency-aware deep fusion network for optimal contact selection on STN-DBS electrodes. Sci China Inf Sci, 2022, 65(4): 140404, doi: 10.1007/s11432-021-3392-1

信息器件 MEMS RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

A 70%-power transmission efficiency, 3.39 Mbps power and data telemetry over a single 13.56 MHz inductive link for biomedical implants
Chen, Mingyi; Pan, Luominghao; Lin, Qiuyang; Cheng, Longlong; Ming, Dong
Sci China Inf Sci, 2023, 66(2): 122406
Keywords: power and data telemetry; inductive link; implantable medical device; brain-computer interface; phase-locked-loop; binary-phase-shift keying; power transfer efficiency
Cite as: Chen M Y, Pan L M H, Lin Q Y, et al. A 70%-power transmission efficiency, 3.39 Mbps power and data telemetry over a single 13.56 MHz inductive link for biomedical implants. Sci China Inf Sci, 2023, 66(2): 122406, doi: 10.1007/s11432-022-3563-9

信息器件 新器件 REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 20

Recent progress of integrated circuits and optoelectronic chips
Hao, Yue; Xiang, Shuiying; Han, Genquan; Zhang, Jincheng; Ma, Xiaohua; Zhu, Zhangming; Guo, Xingxing; Zhang, Yahui; Han, Yanan; Song, Ziwei; Liu, Yan; Yang, Ling; Zhou, Hong; Shi, Jiangyi; Zhang, Wei; Xu, Min; Zhao, Weisheng; Pan, Biao; Huang, Yangqi; Liu, Qi; Cai, Yimao; Zhu, Jian; Ou, Xin; You, Tiangui; Wu, Huaqiang; Gao, Bin; Zhang, Zhiyong; Guo, Guoping; Chen, Yonghua; Liu, Yong; Chen, Xiangfei; Xue, Chunlai; Wang, Xingjun; Zhao, Lixia; Zou, Xihua; Yan, Lianshan; Li, Ming
Sci China Inf Sci, 2021, 64(10): 201401
Keywords: integrated circuit; semiconductor science and technology; optoelectronic device and chip; photonic integrated circuit; wide bandgap semiconductors; silicon photonics; hybrid integration; quantum chip; integrated microwave photonic; photonic neural computing
Cite as: Hao Y, Xiang S Y, Han G Q, et al. Recent progress of integrated circuits and optoelectronic chips. Sci China Inf Sci, 2021, 64(10): 201401, doi: 10.1007/s11432-021-3235-7

信息器件 新器件 REVIEW Webpage Webpage-cn SpringerLink Google Scholar Video Cited in SCI: 11

In-memory computing with emerging nonvolatile memory devices
Cheng, Caidie; Tiw, Pek Jun; Cai, Yimao; Yan, Xiaoqin; Yang, Yuchao; Huang, Ru
Sci China Inf Sci, 2021, 64(12): 221402
Keywords: in-memory computing; von neumann bottleneck; nonvolatile memory; energy efficiency; neural network
Cite as: Cheng C D, Tiw P J, Cai Y M, et al. In-memory computing with emerging nonvolatile memory devices. Sci China Inf Sci, 2021, 64(12): 221402, doi: 10.1007/s11432-021-3327-7

信息器件 新器件 REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 10

Neuromorphic sensory computing
Wan, Tianqing; Ma, Sijie; Liao, Fuyou; Fan, Lingwei; Chai, Yang
Sci China Inf Sci, 2022, 65(4): 141401
Keywords: neuromorphic; sensory computing; multimodal sensory computing; electronic sensory computing; optical sensory computing
Cite as: Wan T Q, Ma S J, Liao F Y, et al. Neuromorphic sensory computing. Sci China Inf Sci, 2022, 65(4): 141401, doi: 10.1007/s11432-021-3336-8

Special Focus on Near-memory and In-memory Computing
信息器件 新器件 REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 8

A survey of in-spin transfer torque MRAM computing
Cai, Hao; Liu, Bo; Chen, Juntong; Naviner, Lirida; Zhou, Yongliang; Wang, Zhen; Yang, Jun
Sci China Inf Sci, 2021, 64(6): 160402
Keywords: spin-transfer torque-magnetoresistive random access memory; in-memory computing; magnetic tunnel junction; analog computing; nonvolatile memory; boolean logic; neural network
Cite as: Cai H, Liu B, Chen J T, et al. A survey of in-spin transfer torque MRAM computing. Sci China Inf Sci, 2021, 64(6): 160402, doi: 10.1007/s11432-021-3220-0

Special Focus on Near-memory and In-memory Computing
信息器件 新器件 PROGRESS Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 7

Breaking the von Neumann bottleneck: architecture-level processing-in-memory technology
Zou, Xingqi; Xu, Sheng; Chen, Xiaoming; Yan, Liang; Han, Yinhe
Sci China Inf Sci, 2021, 64(6): 160404
Keywords: processing-in-memory (pim); von neumann bottleneck; memory wall; pim simulator; architecture-level pim
Cite as: Zou X Q, Xu S, Chen X M, et al. Breaking the von Neumann bottleneck: architecture-level processing-in-memory technology. Sci China Inf Sci, 2021, 64(6): 160404, doi: 10.1007/s11432-020-3227-1

Special Focus on Near-memory and In-memory Computing
信息器件 新器件 REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 6

Keywords: graph processing; machine learning acceleration; reram; hmc; hbm
Cite as: Qian X H. Graph processing and machine learning architectures with emerging memory technologies: a survey. Sci China Inf Sci, 2021, 64(6): 160401, doi: 10.1007/s11432-020-3219-6

Special Focus on Near-memory and In-memory Computing
信息器件 新器件 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 5

Array-level boosting method with spatial extended allocation to improve the accuracy of memristor based computing-in-memory chips
Zhang, Wenqiang; Gao, Bin; Yao, Peng; Tang, Jianshi; Qian, He; Wu, Huaqiang
Sci China Inf Sci, 2021, 64(6): 160406
Keywords: memristor; computing-in-memory; array-level boosting; neuromorphic computing; rram
Cite as: Zhang W Q, Gao B, Yao P, et al. Array-level boosting method with spatial extended allocation to improve the accuracy of memristor based computing-in-memory chips. Sci China Inf Sci, 2021, 64(6): 160406, doi: 10.1007/s11432-020-3198-9

Special Focus on Near-memory and In-memory Computing
信息器件 新器件 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 4

NAS4RRAM: neural network architecture search for inference on RRAM-based accelerators
Yuan, Zhihang; Liu, Jingze; Li, Xingchen; Yan, Longhao; Chen, Haoxiang; Wu, Bingzhe; Yang, Yuchao; Sun, Guangyu
Sci China Inf Sci, 2021, 64(6): 160407
Keywords: network architecture search (nas); neural networks; rram-based accelerator; hardware noise; quantization
Cite as: Yuan Z H, Liu J Z, Li X C, et al. NAS4RRAM: neural network architecture search for inference on RRAM-based accelerators. Sci China Inf Sci, 2021, 64(6): 160407, doi: 10.1007/s11432-020-3245-7

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Tuning the pinning direction of giant magnetoresistive sensor by post annealing process
Cao, Zhiqiang; Wei, Yiming; Chen, Wenjing; Yan, Shaohua; Lin, Lin; Li, Zhi; Wang, Lezhi; Yang, Huaiwen; Leng, Qunwen; Zhao, Weisheng
Sci China Inf Sci, 2021, 64(6): 162402
Keywords: gmr sensor; full wheatstone bridge; annealing; simulation
Cite as: Cao Z Q, Wei Y M, Chen W J, et al. Tuning the pinning direction of giant magnetoresistive sensor by post annealing process. Sci China Inf Sci, 2021, 64(6): 162402, doi: 10.1007/s11432-020-2959-6

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Layout dependence of total-ionizing-dose response in 65-nm bulk Si pMOSFET
Ren, Zhexuan; An, Xia; Li, Gensong; Zhang, Xing; Huang, Ru
Sci China Inf Sci, 2021, 64(2): 129401
Keywords: radiation; tid; lde; 65nm; pmos; sa
Cite as: Ren Z X, An X, Li G S, et al. Layout dependence of total-ionizing-dose response in 65-nm bulk Si pMOSFET. Sci China Inf Sci, 2021, 64(2): 129401, doi: 10.1007/s11432-019-2795-7

Special Focus on Near-memory and In-memory Computing
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Energy-efficient computing-in-memory architecture for AI processor: device, circuit, architecture perspective
Chang, Liang; Li, Chenglong; Zhang, Zhaomin; Xiao, Jianbiao; Liu, Qingsong; Zhu, Zhen; Li, Weihang; Zhu, Zixuan; Yang, Siqi; Zhou, Jun
Sci China Inf Sci, 2021, 64(6): 160403
Keywords: energy efficiency; computing-in-memory; non-volatile memory; test demonstrators; ai processor
Cite as: Chang L, Li C L, Zhang Z M, et al. Energy-efficient computing-in-memory architecture for AI processor: device, circuit, architecture perspective. Sci China Inf Sci, 2021, 64(6): 160403, doi: 10.1007/s11432-021-3234-0

Special Focus on Near-memory and In-memory Computing
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Bayesian neural network enhancing reliability against conductance drift for memristor neural networks
Zhou, Yue; Hu, Xiaofang; Wang, Lidan; Duan, Shukai
Sci China Inf Sci, 2021, 64(6): 160408
Keywords: conductance drift; neuromorphic computing; bayesian neural network; memristor crossbar array; network reliability
Cite as: Zhou Y, Hu X F, Wang L D, et al. Bayesian neural network enhancing reliability against conductance drift for memristor neural networks. Sci China Inf Sci, 2021, 64(6): 160408, doi: 10.1007/s11432-020-3204-y

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Multi level cell (MLC) in 3D crosspoint phase change memory array
Gong, Nanbo
Sci China Inf Sci, 2021, 64(6): 166401
Keywords: memory; pcm; mlc; 1t1r; ots-pcm
Cite as: Gong N. Multi level cell (MLC) in 3D crosspoint phase change memory array. Sci China Inf Sci, 2021, 64(6): 166401, doi: 10.1007/s11432-021-3184-5

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A unified hybrid compact model of β-Ga2O3 Schottky barrier diodes for mixer and rectifier applications
Zhou, Kai; He, Qiming; Jian, Guangzhong; Xu, Guangwei; Wu, Feihong; Li, Yao; Hu, Zhuangzhuang; Feng, Qian; Zhao, Xiaolong; Long, Shibing
Sci China Inf Sci, 2021, 64(11): 219403
Keywords: β-ga2o3 sbds; compact model; model verification; mixer; rectifier
Cite as: Zhou K, He Q M, Jian G Z, et al. A unified hybrid compact model of β-Ga2O3 Schottky barrier diodes for mixer and rectifier applications. Sci China Inf Sci, 2021, 64(11): 219403, doi: 10.1007/s11432-021-3224-2

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IGZO-based neuromorphic transistors with temperature-dependent synaptic plasticity and spiking logics
Zhu, Ying; He, Yongli; Chen, Chunsheng; Zhu, Li; Wan, Changjin; Wan, Qing
Sci China Inf Sci, 2022, 65(6): 162401
Keywords: neuromorphic transistors; igzo tfts; temperature-dependent synaptic plasticity; logic transformation
Cite as: Zhu Y, He Y L, Chen C S, et al. IGZO-based neuromorphic transistors with temperature-dependent synaptic plasticity and spiking logics. Sci China Inf Sci, 2022, 65(6): 162401, doi: 10.1007/s11432-021-3326-6

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Design space for stabilized negative capacitance in HfO2 ferroelectric-dielectric stacks based on phase field simulation
Chang, Pengying; Du, Gang; Liu, Xiaoyan
Sci China Inf Sci, 2021, 64(2): 122402
Keywords: ferroelectric; polarization dynamics; hysteresis; negative capacitance; depolarization field
Cite as: Chang P Y, Du G, Liu X Y. Design space for stabilized negative capacitance in HfO2 ferroelectric-dielectric stacks based on phase field simulation. Sci China Inf Sci, 2021, 64(2): 122402, doi: 10.1007/s11432-020-3005-8

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A bidirectional threshold switching selector with a symmetric multilayer structure
Li, Qingjiang; Li, Kun; Wang, Yongzhou; Liu, Sen; Song, Bing
Sci China Inf Sci, 2021, 64(4): 142402
Keywords: threshold switching selector; resistive random access memory; leakage current; programmable metallization cell
Cite as: Li Q J, Li K, Wang Y Z, et al. A bidirectional threshold switching selector with a symmetric multilayer structure. Sci China Inf Sci, 2021, 64(4): 142402, doi: 10.1007/s11432-020-2960-x

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Unidirectional p-GaN gate HEMT with composite source-drain field plates
Wang, Haiyong; Mao, Wei; Zhao, Shenglei; He, Yuanhao; Chen, Jiabo; Du, Ming; Zheng, Xuefeng; Wang, Chong; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue
Sci China Inf Sci, 2022, 65(2): 129405
Keywords: p-gan; hemt; reverse blocking; composite source-drain field plates; dynamic performance; electric field; breakdown voltage
Cite as: Wang H Y, Mao W, Zhao S L, et al. Unidirectional p-GaN gate HEMT with composite source-drain field plates. Sci China Inf Sci, 2022, 65(2): 129405, doi: 10.1007/s11432-021-3267-3

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Experimental investigation of the gate voltage range of negative differential capacitance in ferroelectric transistors
YANG, Mengxuan; HUANG, Qianqian; SU, Chang; CHEN, Liang; WANG, Yangyuan; HUANG, Ru
Sci China Inf Sci, 2022, 65(6): 169402
Keywords: Ferroelectric; Negative differential capacitance effect; Polarization; Low power; Subthreshold swing
Cite as: Yang M X, Huang Q Q, Su C, et al. Experimental investigation of the gate voltage range of negative differential capacitance in ferroelectric transistors. Sci China Inf Sci, 2022, 65(6): 169402, doi: 10.1007/s11432-021-3268-0

Special Focus on Near-memory and In-memory Computing
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Neural connectivity inference with spike-timing dependent plasticity network
Moon, John; Wu, Yuting; Zhu, Xiaojian; Lu, Wei D.
Sci China Inf Sci, 2021, 64(6): 160405
Keywords: spike-timing dependent plasticity; neural connectivity; memristor; online learning; second-order memristor
Cite as: Moon J, Wu Y T, Zhu X J, et al. Neural connectivity inference with spike-timing dependent plasticity network. Sci China Inf Sci, 2021, 64(6): 160405, doi: 10.1007/s11432-021-3217-0

Special Focus on Near-memory and In-memory Computing
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Towards efficient allocation of graph convolutional networks on hybrid computation-in-memory architecture
Chen, Jiaxian; Lin, Guanquan; Chen, Jiexin; Wang, Yi
Sci China Inf Sci, 2021, 64(6): 160409
Keywords: computation-in-memory; graph convolutional networks; hybrid architecture; scheduling; inference; accelerator
Cite as: Chen J X, Lin G Q, Chen J X, et al. Towards efficient allocation of graph convolutional networks on hybrid computation-in-memory architecture. Sci China Inf Sci, 2021, 64(6): 160409, doi: 10.1007/s11432-020-3248-y

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Design of a high-performance 12T SRAM cell for single event upset tolerance
Qi, Chunhua; Zhang, Yanqing; Ma, Guoliang; Liu, Chaoming; Wang, Tianqi; Xiao, Liyi; Huo, Mingxue; Zhai, Guofu
Sci China Inf Sci, 2021, 64(11): 219401
Keywords: reliability; single event upset; sram; radiation hardened by design; single event effect
Cite as: Qi C H, Zhang Y Q, Ma G L, et al. Design of a high-performance 12T SRAM cell for single event upset tolerance. Sci China Inf Sci, 2021, 64(11): 219401, doi: 10.1007/s11432-020-3123-2

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Reconfigurable physical unclonable cryptographic primitives based on current-induced nanomagnets switching
Zhang, Shuai; Zhang, Jian; Li, Shihao; Wang, Yaoyuan; Chen, Zhenjiang; Hong, Jeongmin; You, Long
Sci China Inf Sci, 2022, 65(2): 122405
Keywords: reconfigurable physical unclonable function; spin-orbit torque; cryptographic primitive; spintronics; nanomagnet
Cite as: Zhang S, Zhang J, Li S H, et al. Reconfigurable physical unclonable cryptographic primitives based on current-induced nanomagnets switching. Sci China Inf Sci, 2022, 65(2): 122405, doi: 10.1007/s11432-021-3270-8

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Low-time-complexity document clustering using memristive dot product engine
Zhou, Houji; Li, Yi; Miao, Xiangshui
Sci China Inf Sci, 2022, 65(2): 122410
Keywords: linear-time clustering; cosine similarity; spherical k-means; memristor; in-memory computing
Cite as: Zhou H J, Li Y, Miao X S. Low-time-complexity document clustering using memristive dot product engine. Sci China Inf Sci, 2022, 65(2): 122410, doi: 10.1007/s11432-021-3316-x

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Physical investigation of subthreshold swing degradation behavior in negative capacitance FET
Yang, Mengxuan; Huang, Qianqian; Wang, Kaifeng; Su, Chang; Chen, Liang; Wang, Yangyuan; Huang, Ru
Sci China Inf Sci, 2022, 65(6): 162404
Keywords: ferroelectric; negative differential capacitance effect; polarization; low power; voltage amplification
Cite as: Yang M X, Huang Q Q, Wang K F, et al. Physical investigation of subthreshold swing degradation behavior in negative capacitance FET. Sci China Inf Sci, 2022, 65(6): 162404, doi: 10.1007/s11432-021-3283-5

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A comprehensive study of device variability of sub-5 nm nanosheet transistors and interplay with quantum confinement variation
Luo, Haowen; Li, Ruihan; Miao, Xiangshui; Wang, Xingsheng
Sci China Inf Sci, 2023, 66(2): 129402
Keywords: nanosheet transistor; TCAD simulation; quantum confinement variation; process variation; statistical variability; interplay
Cite as: Luo H W, Li R H, Miao X S, et al. A comprehensive study of device variability of sub-5 nm nanosheet transistors and interplay with quantum confinement variation. Sci China Inf Sci, 2023, 66(2): 129402, doi: 10.1007/s11432-021-3399-3

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High mobility germanium-on-insulator p-channel FinFETs
Liu, Huan; Han, Genquan; Zhou, Jiuren; Liu, Yan; Hao, Yue
Sci China Inf Sci, 2021, 64(4): 149402
Keywords: zro2; high mobility; p-channel; finfet; germanium on insulator
Cite as: Liu H, Han G Q, Zhou J R, et al. High mobility germanium-on-insulator p-channel FinFETs. Sci China Inf Sci, 2021, 64(4): 149402, doi: 10.1007/s11432-019-2846-9

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Flash memory based computing-in-memory system to solve partial differential equations
Feng, Yang; Wang, Fei; Zhan, Xuepeng; Li, Yuan; Chen, Jiezhi
Sci China Inf Sci, 2021, 64(6): 169401
Keywords: jacobi iteration; computing-in-memory; flash memory; partial differential equation; spice simulation
Cite as: Feng Y, Wang F, Zhan X P, et al. Flash memory based computing-in-memory system to solve partial differential equations. Sci China Inf Sci, 2021, 64(6): 169401, doi: 10.1007/s11432-020-2942-2

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Controlled nano-cracking actuated by an in-plane voltage
Luo, Qiang; Guo, Zhe; Zhang, Shuai; Yang, Xiaofei; Zou, Xuecheng; Hong, Jeongmin; You, Long
Sci China Inf Sci, 2021, 64(8): 189403
Keywords: nanoelectromechanical switch; ferroelectric nano-cracking; non-volatile switching; complementary switching; reconfigurable logic
Cite as: Luo Q, Guo Z, Zhang S, et al. Controlled nano-cracking actuated by an in-plane voltage. Sci China Inf Sci, 2021, 64(8): 189403, doi: 10.1007/s11432-020-3098-x

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Nano-scaled transistor reliability characterization at nano-second regime
Cheng, Ran; Sun, Ying; Qu, Yiming; Liu, Wei; Liu, Fanyu; Gao, Jianfeng; Xu, Nuo; Chen, Bing
Sci China Inf Sci, 2021, 64(10): 209401
Keywords: fdsoi; self-heating effect; reliability; prbs; vth shift
Cite as: Cheng R, Sun Y, Qu Y M, et al. Nano-scaled transistor reliability characterization at nano-second regime. Sci China Inf Sci, 2021, 64(10): 209401, doi: 10.1007/s11432-020-3088-3

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Investigation of weight updating modes on oxide-based resistive switching memory synapse towards neuromorphic computing applications
Ding, Qingting; Gong, Tiancheng; Yu, Jie; Xu, Xiaoxin; Li, Xiaoyan; Lv, Hangbing; Yang, Jianguo; Luo, Qing; Yuan, Peng; Zhang, Feng; Liu, Ming
Sci China Inf Sci, 2021, 64(11): 219402
Keywords: gate voltage ramping; gvr; constant drain voltage; cdv; time lag plot; rtn; neuromorphic computing
Cite as: Ding Q T, Gong T C, Yu J, et al. . Investigation of weight updating modes on oxide-based resistive switching memory synapse towards neuromorphic computing applications. Sci China Inf Sci, 2021, 64(11): 219402, doi: 10.1007/s11432-020-3127-x

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Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate
Zhao, Dujun; Wu, Zhaoxi; Duan, Chao; Mei, Bo; Li, Zhongyang; Wang, Zhongxu; Tang, Qing; Yang, Qing; Wu, Yinhe; Zhang, Weihang; Liu, Zhihong; Zhao, Shenglei; Zhang, Jincheng; Hao, Yue
Sci China Inf Sci, 2022, 65(2): 122401
Keywords: reverse-blocking voltage; aln/algan hemts; schottky-drain; field plate; optimal passivation thickness
Cite as: Zhao D J, Wu Z X, Duan C, et al. Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate. Sci China Inf Sci, 2022, 65(2): 122401, doi: 10.1007/s11432-020-3166-9

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Stateful implication logic based on perpendicular magnetic tunnel junctions
Cai, Wenlong; Wang, Mengxing; Cao, Kaihua; Yang, Huaiwen; Peng, Shouzhong; Li, Huisong; Zhao, Weisheng
Sci China Inf Sci, 2022, 65(2): 122406
Keywords: perpendicular magnetic anisotropy magnetic tunnel junction; implication; spin transfer torque; spintronic implication logic gate; processing-in-memory
Cite as: Cai W L, Wang M X, Cao K H, et al. Stateful implication logic based on perpendicular magnetic tunnel junctions. Sci China Inf Sci, 2022, 65(2): 122406, doi: 10.1007/s11432-020-3189-x

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Effects of non-fatal electrostatic discharge on the threshold voltage degradation in nano CMOS devices
Wong, Hei; Dong, Shurong; Chen, Zehua
Sci China Inf Sci, 2022, 65(2): 129403
Keywords: nano cmos; esd; reliability; hot-carrier; charge trapping
Cite as: Wong H, Dong S R, Chen Z H. Effects of non-fatal electrostatic discharge on the threshold voltage degradation in nano CMOS devices. Sci China Inf Sci, 2022, 65(2): 129403, doi: 10.1007/s11432-020-3197-8

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Femtosecond laser-assisted switching in perpendicular magnetic tunnel junctions with double-interface free layer
Wang, Luding; Cai, Wenlong; Cao, Kaihua; Shi, Kewen; Koopmans, Bert; Zhao, Weisheng
Sci China Inf Sci, 2022, 65(4): 142403
Keywords: magnetic tunnel junctions; mtjs; heat-assisted magnetic recording; hamr; spintronics; femtosecond laser; thermally-assisted switching; tas
Cite as: Wang L D, Cai W L, Cao K H, et al. Femtosecond laser-assisted switching in perpendicular magnetic tunnel junctions with double-interface free layer. Sci China Inf Sci, 2022, 65(4): 142403, doi: 10.1007/s11432-020-3244-8

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Total ionizing dose effects on aluminum oxide/ zirconium-doped hafnium oxide stack ferroelectric tunneling junctions
Yang, Xueqin; Xu, Yannan; Bi, Jinshun; Xi, Kai; Fan, Linjie; Ji, Lanlong; Xu, Gaobo
Sci China Inf Sci, 2022, 65(6): 169403
Keywords: HfO2; ferroelectric tunneling junctions; dielectric; total ionizing dose; gamma-ray radiation
Cite as: Yang X Q, Xu Y N, Bi J S, et al. Total ionizing dose effects on aluminum oxide/ zirconium-doped hafnium oxide stack ferroelectric tunneling junctions. Sci China Inf Sci, 2022, 65(6): 169403, doi: 10.1007/s11432-021-3269-4

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Novel SiC SBD-wall-integrated trench MOSFET with a semi-superjunction and split trench gate
Luo, Xiaorong; Huang, Junyue; Song, Xu; Jiang, Qinfeng; Wei, Jie; Fang, Jian; Yang, Fei
Sci China Inf Sci, 2022, 65(6): 169404
Keywords: SiC; MOSFET; Schottky barrier diode; semi-superjunction; split trench gate; reverse turn-on voltage
Cite as: Luo X R, Huang J Y, Song X, et al. Novel SiC SBD-wall-integrated trench MOSFET with a semi-superjunction and split trench gate. Sci China Inf Sci, 2022, 65(6): 169404, doi: 10.1007/s11432-021-3324-0

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Efficient heterogeneous integration of InP/Si and GaSb/Si templates with ultra-smooth surfaces
Jin, Tingting; Lin, Jiajie; You, Tiangui; Zhang, Xiaolei; Liang, Hao; Zhu, Yifan; Sun, Jialiang; Shi, Hangning; Chi, Chaodan; Zhou, Min; Kudrawiec, Robert; Wang, Shumin; Ou, Xin
Sci China Inf Sci, 2022, 65(8): 182402
Keywords: heterogeneous integration; InP/Si; GaSb/Si; MBE; ion-slicing technique; selective chemical etching
Cite as: Jin T T, Lin J J, You T G, et al. Efficient heterogeneous integration of InP/Si and GaSb/Si templates with ultra-smooth surfaces. Sci China Inf Sci, 2022, 65(8): 182402, doi: 10.1007/s11432-021-3398-y

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Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs
Wu, Yinhe; Zhang, Jincheng; Zhao, Shenglei; Wu, Zhaoxi; Wang, Zhongxu; Mei, Bo; Duan, Chao; Zhao, Dujun; Zhang, Weihang; Liu, Zhihong; Hao, Yue
Sci China Inf Sci, 2022, 65(8): 182404
Keywords: heavy ions irradiation; p-GaN normally-off HEMTs; line-shaped crystal defects; leakage path; defect percolation process
Cite as: Wu Y H, Zhang J C, Zhao S L, et al. Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs. Sci China Inf Sci, 2022, 65(8): 182404, doi: 10.1007/s11432-021-3305-2

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Single event transients induced by pulse laser in Ge pMOSFETs and its supply voltage dependence
LIU, Jingyi; AN, Xia; LI, Gensong; REN, Zhexuan; LI, Ming; ZHANG, Xing; HUANG, Ru
Sci China Inf Sci, 2022, 65(8): 189402
Keywords: Ge pMOSFETs; single event transient; single event effect; SEE; pulse laser; supply voltage dependence
Cite as: Liu J Y, An X, Li G S, et al. Single event transients induced by pulse laser in Ge pMOSFETs and its supply voltage dependence. Sci China Inf Sci, 2022, 65(8): 189402, doi: 10.1007/s11432-021-3372-2

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Keywords: random telegraph noise; threshold voltage fluctuations; RTN magnitude; reliability; variation
Cite as: Zhan X P, Chen J Z, Ji Z G. Insights of VG-dependent threshold voltage fluctuations from dual-point random telegraph noise characterization in nanoscale transistors. Sci China Inf Sci, 2022, 65(8): 189405, doi: 10.1007/s11432-021-3330-8

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Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method
Liu, Siyu; Ma, Xiaohua; Zhu, Jiejie; Mi, Minhan; Guo, Jingshu; Liu, Jielong; Chen, Yilin; Zhu, Qing; Yang, Ling; Hao, Yue
Sci China Inf Sci, 2022, 65(10): 202401
Keywords: GaN; InAlN/GaN HEMTs; etching damage; scattering mechanism
Cite as: Liu S Y, Ma X H, Zhu J J, et al. Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method. Sci China Inf Sci, 2022, 65(10): 202401, doi: 10.1007/s11432-021-3359-y

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Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light
Chen, Yilin; Zhu, Qing; Zhu, Jiejie; Mi, Minhan; Zhang, Meng; Zhou, Yuwei; Zhao, Ziyue; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2023, 66(2): 122401
Keywords: GaN; MIS HEMTs; off-state stress; UV light; hole trapping
Cite as: Chen Y L, Zhu Q, Zhu J J, et al. Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light. Sci China Inf Sci, 2023, 66(2): 122401, doi: 10.1007/s11432-021-3377-2

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A memristive neural network based matrix equation solver with high versatility and high energy efficiency
Li, Jiancong; Zhou, Houji; Li, Yi; Miao, Xiangshui
Sci China Inf Sci, 2023, 66(2): 122402
Keywords: matrix equation solving; memristor; linear neural network; matrix-multiplication; analog com- puting
Cite as: Li J C, Zhou H J, Li Y, et al. A memristive neural network based matrix equation solver with high versatility and high energy efficiency. Sci China Inf Sci, 2023, 66(2): 122402, doi: 10.1007/s11432-021-3374-x

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Associative learning of a three-terminal memristor network for digits recognition
Ren, Yiming; Tian, Bobo; Yan, Mengge; Feng, Guangdi; Gao, Bin; Yue, Fangyu; Peng, Hui; Tang, Xiaodong; Zhu, Qiuxiang; Chu, Junhao; Duan, Chungang
Sci China Inf Sci, 2023, 66(2): 122403
Keywords: artificial intelligence; associative learning; memristor; classification network
Cite as: Ren Y M, Tian B B, Yan M G, et al. Associative learning of a three-terminal memristor network for digits recognition. Sci China Inf Sci, 2023, 66(2): 122403, doi: 10.1007/s11432-022-3503-4

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1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate
Zhao S L, Zhang J C, Zhang Y C, et al
Sci China Inf Sci, 2023, 66(2): 122407
Keywords: p-GaN gate; HEMTs; high voltage; SiC substrate
Cite as: Zhao S L, Zhang J C, Zhang Y C, et al. 1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate. Sci China Inf Sci, 2023, 66(2): 122407, doi: 10.1007/s11432-022-3475-9

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Keywords: Pt/Co stacks; perpendicular magnetic anisotropy; magnetodynamic behavior; spintronics flexible devices; high temperature deposition
Cite as: Eimer S, Cheng H Y, Li J J, et al. Perpendicular magnetic anisotropy based spintronics devices in Pt/Co stacks under different hard and flexible substrates. Sci China Inf Sci, 2023, 66(2): 122408, doi: 10.1007/s11432-021-3371-4

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Keywords: Hf0.5Zr0.5O2 films; ferroelectric; resistive switching; accuracy; on-chip DNN
Cite as: Jiang P F, Xu K R, Yu J, et al. Freely switching between ferroelectric and resistive switching in Hf 0.5Zr0.5O2 films and its application on high accuracy on-chip deep neural networks. Sci China Inf Sci, 2023, 66(2): 122409, doi: 10.1007/s11432-022-3508-7

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Co-optimization strategy between array operation and weight mapping for flash computing arrays to achieve high computing efficiency and accuracy
Yu, Guihai; Huang, Peng; Han, Runze; Han, Lixia; Liu, Xiaoyan; Kang, Jinfeng
Sci China Inf Sci, 2023, 66(2): 129403
Keywords: neural network; Flash computing array; efficient computation; weight mapping; interconnect resistance
Cite as: Yu G H, Huang P, Han R Z, et al. Co-optimization strategy between array operation and weight mapping for flash computing arrays to achieve high computing efficiency and accuracy. Sci China Inf Sci, 2023, 66(2): 129403, doi: 10.1007/s11432-021-3381-3

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Hf0.5Zr0.5O2 1T–1C FeRAM arrays with excellent endurance performance for embedded memory
Xiao W W, Peng Y, Liu Y, et al
Sci China Inf Sci, 2023, 66(4): 149401
Keywords: FeRAM; Hf0.5Zr0.5O2; Arrays; Endurance; Ferroelectric
Cite as: Xiao W W, Peng Y, Liu Y, et al. Hf0.5Zr0.5O2 1T–1C FeRAM arrays with excellent endurance performance for embedded memory. Sci China Inf Sci, 2023, 66(4): 149401, doi: 10.1007/s11432-022-3469-5

Special Focus on Two-Dimensional Materials and Device Applications
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Bi2O2Se/BP van der Waals heterojunction for high performance broadband photodetector
Liu, Xing; Wang, Wenhui; Yang, Fang; Feng, Shaopeng; Hu, Zhenliang; Lu, Junpeng; Ni, Zhenhua
Sci China Inf Sci, 2021, 64(4): 140404
Keywords: bi2o2se; bp; van der waals heterojunction; broadband photodetector; low dark current; narrow bandgap
Cite as: Liu X, Wang W H, Yang F, et al. Bi2O2Se/BP van der Waals heterojunction for high performance broadband photodetector. Sci China Inf Sci, 2021, 64(4): 140404, doi: 10.1007/s11432-020-3101-1

Special Focus on Two-Dimensional Materials and Device Applications
信息器件 新材料 REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 16

Properties and photodetector applications of two-dimensional black arsenic phosphorus and black phosphorus
Han, Ruyue; Feng, Shun; Sun, Dong-Ming; Cheng, Hui-Ming
Sci China Inf Sci, 2021, 64(4): 140402
Keywords: black arsenic phosphorus; crystal structure; optical property; electrical property; photodetector
Cite as: Han R Y, Feng S, Sun D-M, et al. Properties and photodetector applications of two-dimensional black arsenic phosphorus and black phosphorus. Sci China Inf Sci, 2021, 64(4): 140402, doi: 10.1007/s11432-020-3172-1

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Analyzing electrostatic modulation of signal transduction efficiency in MoS2 nanoelectromechanical resonators with interferometric readout
Zhu, Jiankai; Zhang, Pengcheng; Yang, Rui; Wang, Zenghui
Sci China Inf Sci, 2022, 65(2): 122409
Keywords: mos2; 2d nems; resonators; laser interferometry; responsivity
Cite as: Zhu J K, Zhang P C, Yang R, et al. Analyzing electrostatic modulation of signal transduction efficiency in MoS2 nanoelectromechanical resonators with interferometric readout. Sci China Inf Sci, 2022, 65(2): 122409, doi: 10.1007/s11432-021-3297-x

Special Focus on Two-Dimensional Materials and Device Applications
信息器件 新材料 REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 4

Filling the gap: thermal properties and device applications of graphene
Wu, Rui; Zhu, Rui-Zhi; Zhao, Shi-Hui; Zhang, Gang; Tian, He; Ren, Tian-Ling
Sci China Inf Sci, 2021, 64(4): 140401
Keywords: graphene; thermal properties; device application; thermal conductivity; 2d material
Cite as: Wu R, Zhu R-Z, Zhao S-H, et al. Filling the gap: thermal properties and device applications of graphene. Sci China Inf Sci, 2021, 64(4): 140401, doi: 10.1007/s11432-020-3151-5

Special Focus on Two-Dimensional Materials and Device Applications
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Interface engineering of ferroelectric-gated MoS2 phototransistor
Wu, Shuaiqin; Wang, Xudong; Jiang, Wei; Tu, Luqi; Chen, Yan; Liu, Jingjing; Lin, Tie; Shen, Hong; Ge, Jun; Hu, Weida; Meng, Xiangjian; Wang, Jianlu; Chu, Junhao
Sci China Inf Sci, 2021, 64(4): 140407
Keywords: 2d materials; ferroelectrics; mos2 phototransistors; h-bn; interface engineering
Cite as: Wu S Q, Wang X D, Jiang W, et al. Interface engineering of ferroelectric-gated MoS2 phototransistor. Sci China Inf Sci, 2021, 64(4): 140407, doi: 10.1007/s11432-020-3180-5

Special Focus on Two-Dimensional Materials and Device Applications
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Efficient graphene in-plane homogeneous p-n-p junction based infrared photodetectors with low dark current
An, Junru; Sun, Tian; Wang, Bin; Xu, Jianlong; Li, Shaojuan
Sci China Inf Sci, 2021, 64(4): 140403
Keywords: infrared photodetector; graphene; p-n-p junction; dark current; photoresponse
Cite as: An J R, Sun T, Wang B, et al. Efficient graphene in-plane homogeneous p-n-p junction based infrared photodetectors with low dark current. Sci China Inf Sci, 2021, 64(4): 140403, doi: 10.1007/s11432-020-3179-9

Special Focus on Two-Dimensional Materials and Device Applications
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Raman spectra evidence for the covalent-like quasi-bonding between exfoliated MoS2 and Au films
Huang, Xinyu; Zhang, Lei; Liu, Liwei; Qin, Yang; Fu, Qiang; Wu, Qiong; Yang, Rong; Lv, Jun-Peng; Ni, Zhenhua; Liu, Lei; Ji, Wei; Wang, Yeliang; Zhou, Xingjiang; Huang, Yuan
Sci China Inf Sci, 2021, 64(4): 140406
Keywords: mos2; raman spectroscopy; gold-enhanced mechanical exfoliation; low-frequency raman modes; covalent-like quasi-bonding
Cite as: Huang X Y, Zhang L, Liu L W, et al. Raman spectra evidence for the covalent-like quasi-bonding between exfoliated MoS2 and Au films. Sci China Inf Sci, 2021, 64(4): 140406, doi: 10.1007/s11432-020-3173-9

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Spin logic operations based on magnetization switching by asymmetric spin current
Li, Yucai; Zhang, Nan; Wang, Kaiyou
Sci China Inf Sci, 2022, 65(2): 122404
Keywords: spin orbit torque; spin currents; spin current gradient; magnetization switching; spin logic
Cite as: Li Y C, Zhang N, Wang K Y. Spin logic operations based on magnetization switching by asymmetric spin current. Sci China Inf Sci, 2022, 65(2): 122404, doi: 10.1007/s11432-020-3246-8

Special Focus on Two-Dimensional Materials and Device Applications
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Optical emission enhancement of bent InSe thin films
Xie, Jiahao; Zhang, Lijun
Sci China Inf Sci, 2021, 64(4): 140405
Keywords: inse; enhanced luminescence; 2d semiconductor; optical transition; optical anisotropy
Cite as: Xie J H, Zhang L J. Optical emission enhancement of bent InSe thin films. Sci China Inf Sci, 2021, 64(4): 140405, doi: 10.1007/s11432-020-3149-2

Special Focus on Two-Dimensional Materials and Device Applications
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A compact model for transition metal dichalcogenide field effect transistors with effects of interface traps
Xu, Yifei; Li, Weisheng; Fan, Dongxu; Shi, Yi; Qiu, Hao; Wang, Xinran
Sci China Inf Sci, 2021, 64(4): 140408
Keywords: compact model; field effect transistor; transition metal dichalcogenide; mos2; interface traps
Cite as: Xu Y F, Li W S, Fan D X, et al. A compact model for transition metal dichalcogenide field effect transistors with effects of interface traps. Sci China Inf Sci, 2021, 64(4): 140408, doi: 10.1007/s11432-020-3155-7

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Carbon nanotube-based CMOS transistors and integrated circuits
Xie, Yunong; Zhang, Zhiyong
Sci China Inf Sci, 2021, 64(10): 201402
Keywords: carbon nanotube; transistor; integrated circuit; scaling; nanoelectronics
Cite as: Xie Y N, Zhang Z Y. Carbon nanotube-based CMOS transistors and integrated circuits. Sci China Inf Sci, 2021, 64(10): 201402, doi: 10.1007/s11432-021-3271-8

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Toward practical gas sensing with rapid recovery semiconducting carbon nanotube film sensors
Liu, Fangfang; Xiao, Mengmeng; Ning, Yongkai; Zhou, Shaoyuan; He, Jianping; Lin, Yanxia; Zhang, Zhiyong
Sci China Inf Sci, 2022, 65(6): 162402
Keywords: carbon nanotube; gas sensor; thin-film transistors; rapid recovery
Cite as: Liu F F, Xiao M M, Ning Y K, et al. Toward practical gas sensing with rapid recovery semiconducting carbon nanotube film sensors. Sci China Inf Sci, 2022, 65(6): 162402, doi: 10.1007/s11432-021-3286-3

信息器件 新材料 REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

Recent progress in 2D van der Waals heterostructures: fabrication, properties, and applications
Wang, Zenghui; Xu, Bo; Pei, Shenghai; Zhu, Jiankai; Wen, Ting; Jiao, Chenyin; Li, Jing; Zhang, Maodi; Xia, Juan
Sci China Inf Sci, 2022, 65(11): 211401
Keywords: 2D materials; van der Waals heterostructure; interlayer coupling; stacking; layered nanostructures
Cite as: Wang Z H, Xu B, Pei S H, et al. Recent progress in 2D van der Waals heterostructures: fabrication, properties, and applications. Sci China Inf Sci, 2022, 65(11): 211401, doi: 10.1007/s11432-021-3432-6

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Van der Waals heterostructure tunnel FET with potential modulation beyond junction region
Qin, Wenjing; Lv, Yawei; Xia, Zhen; Liao, Lei; Jiang, Changzhong
Sci China Inf Sci, 2022, 65(10): 209401
Keywords: van der Waals; heterostructure; tunnel FET; type-III band alignment; channel potential; density functional theory; Hamiltonian
Cite as: Qin W J, Lv Y W, Xia Z, et al. Van der Waals heterostructure tunnel FET with potential modulation beyond junction region. Sci China Inf Sci, 2022, 65(10): 209401, doi: 10.1007/s11432-021-3335-3

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Efficient charge transfer in WS2/WxMo1−xS2 heterostructure empowered by energy level hybridization
An, Xuhong; Zhang, Yehui; Yu, Yuanfang; Zhao, Weiwei; Yang, Yutian; Niu, Xianghong; Luo, Xuan; Lu, Junpeng; Wang, Jinlan; Ni, Zhenhua
Sci China Inf Sci, 2023, 66(2): 122404
Keywords: van der Waals heterostructure; band offset; hybridization strength; charge transfer; photoluminescence quenching
Cite as: An X H, Zhang Y H, Yu Y F, et al. Efficient charge transfer in WS2/WxMo1−xS2 heterostructure empowered by energy level hybridization. Sci China Inf Sci, 2023, 66(2): 122404, doi: 10.1007/s11432-022-3465-2

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Keywords: knowledge-based neural network; MOSFET; 2D material FETs; Monte Carlo simulations; circuit benchmark
Cite as: Qi G D, Chen X Y, Hu G X, et al. Knowledge-based neural network SPICE modeling for MOSFETs and its application on 2D material field-effect transistors. Sci China Inf Sci, 2023, 66(2): 122405, doi: 10.1007/s11432-021-3483-6

信息器件 光学和光电子 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Supplementary Cited in SCI: 10

Silicon-based inorganic-organic hybrid optoelectronic synaptic devices simulating cross-modal learning
Li, Yayao; Wang, Yue; Yin, Lei; Huang, Wen; Peng, Wenbing; Zhu, Yiyuc; Wang, Kun; Yang, Deren; Pi, Xiaodong
Sci China Inf Sci, 2021, 64(6): 162401
Keywords: poly(3-hexylthiophene); silicon; optoelectronic synaptic devices; cross-modal learning; transistor
Cite as: Li Y Y, Wang Y, Yin L, et al. Silicon-based inorganic-organic hybrid optoelectronic synaptic devices simulating cross-modal learning. Sci China Inf Sci, 2021, 64(6): 162401, doi: 10.1007/s11432-020-3035-8

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Flexible plasmonic random laser for wearable humidity sensing
Tong, Junhua; Shi, Xiaoyu; Wang, Yu; Han, Liang; Zhai, Tianrui
Sci China Inf Sci, 2021, 64(12): 222401
Keywords: random lasers; humidity sensor; wearable; plasmonic
Cite as: Tong J H, Shi X Y, Wang Y, et al. Flexible plasmonic random laser for wearable humidity sensing. Sci China Inf Sci, 2021, 64(12): 222401, doi: 10.1007/s11432-020-3141-3

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RGB WGM lasing woven in fiber braiding cavity
Ge, Kun; Xu, Zhiyang; Guo, Dan; Ben Niu; Ruan, Jun; Cui, Libin; Zhai, Tianrui
Sci China Inf Sci, 2022, 65(8): 182403
Keywords: RGB; whispering gallery mode (WGM) lasing; fiber braiding cavity; full-color gamut
Cite as: Ge K, Xu Z Y, Guo D, et al. RGB WGM lasing woven in fiber braiding cavity. Sci China Inf Sci, 2022, 65(8): 182403, doi: 10.1007/s11432-022-3436-y

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Optoelectronic convolutional neural networks based on time-stretch method
Zang, Yubin; Chen, Minghua; Yang, Sigang; Chen, Hongwei
Sci China Inf Sci, 2021, 64(2): 122401
Keywords: convolutional neural networks; time-stretch method; artificial intelligence
Cite as: Zang Y B, Chen M H, Yang S G, et al. Optoelectronic convolutional neural networks based on time-stretch method. Sci China Inf Sci, 2021, 64(2): 122401, doi: 10.1007/s11432-020-2998-1

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Global modes and coupled modes for integrated twin circular-side octagon microlasers
Yang, Ke; Yang, Yuede; Hao, Youzeng; Wu, Jiliang; Huang, Yongtao; Liu, Jiachen; Xiao, Jinlong; Huang, Yongzhen
Sci China Inf Sci, 2022, 65(2): 122403
Keywords: optical microcavity; semiconductor lasers; coupled cavity; lasing mode control; photonic integration
Cite as: Yang K, Yang Y D, Hao Y Z, et al. Global modes and coupled modes for integrated twin circular-side octagon microlasers. Sci China Inf Sci, 2022, 65(2): 122403, doi: 10.1007/s11432-020-3185-0

信息器件 光学和光电子 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

Experimental demonstration of photonic spike-timing-dependent plasticity based on a VCSOA
Song, Ziwei; Xiang, Shuiying; Cao, Xingyu; Zhao, Shihao; Hao, Yue
Sci China Inf Sci, 2022, 65(8): 182401
Keywords: neuromorphic photonics; vertical-cavity semiconductor optical amplifier; spike-timing-dependent plasticity; optical neural systems; pulsed optical injection
Cite as: Song Z W, Xiang S Y, Cao X Y, et al. Experimental demonstration of photonic spike-timing-dependent plasticity based on a VCSOA. Sci China Inf Sci, 2022, 65(8): 182401, doi: 10.1007/s11432-021-3350-9

信息器件 光学和光电子 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

Second harmonic generation in a hollow-core fiber filled with GaSe nanosheets
Hao, Zhen; Ma, Yuxin; Jiang, Biqiang; Hou, Yueguo; Li, Ailun; Yi, Ruixuan; Gan, Xuetao; Zhao, Jianlin
Sci China Inf Sci, 2022, 65(6): 162403
Keywords: second-harmonic generation; gallium selenide; hollow-core fiber; broadband operation wavelength; time-varied second harmonic generation
Cite as: Hao Z, Ma Y X, Jiang B Q, et al. Second harmonic generation in a hollow-core fiber filled with GaSe nanosheets. Sci China Inf Sci, 2022, 65(6): 162403, doi: 10.1007/s11432-021-3331-3

信息器件 光学和光电子 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

A low-fabrication-temperature, high-gain chip-scale waveguide amplifier
Wang, Bo; Zhou, Peiqi; Wang, Xingjun; He, Yandong
Sci China Inf Sci, 2022, 65(6): 162405
Keywords: photonic circuit integration; low fabrication temperature; high gain; rare earth material; waveguide amplifier
Cite as: Wang B, Zhou P Q, Wang X J, et al. A low-fabrication-temperature, high-gain chip-scale waveguide amplifier. Sci China Inf Sci, 2022, 65(6): 162405, doi: 10.1007/s11432-021-3360-0

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A modified supervised learning rule for training a photonic spiking neural network to recognize digital patterns
Zhang, Yahui; Xiang, Shuiying; Guo, Xingxing; Wen, Aijun; Hao, Yue
Sci China Inf Sci, 2021, 64(2): 122403
Keywords: vertical-cavity surface-emitting laser; modified supervised learning rule; optical spiking neural networks; learning system; pattern recognition
Cite as: Zhang Y H, Xiang S Y, Guo X X, et al. A modified supervised learning rule for training a photonic spiking neural network to recognize digital patterns. Sci China Inf Sci, 2021, 64(2): 122403, doi: 10.1007/s11432-020-3040-1

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A compact polarization-integrated long wavelength infrared focal plane array based on InAs/GaSb superlattice
Zhou, Jian; Zhou, Yi; Shi, Ying; Wang, Fangfang; Xu, Zhicheng; Bai, Zhizhong; Huang, Min; Zheng, Lulu; Liang, Zhaoming; Zhu, Yihong; Xu, Qingqing; Shen, Yiming; Ying, Xiangxiao; Chen, Jianxin
Sci China Inf Sci, 2022, 65(2): 122407
Keywords: lwir; polarization integration; infrared detector; optical crosstalk; extinction ration
Cite as: Zhou J, Zhou Y, Shi Y, et al. A compact polarization-integrated long wavelength infrared focal plane array based on InAs/GaSb superlattice. Sci China Inf Sci, 2022, 65(2): 122407, doi: 10.1007/s11432-021-3252-2

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Terahertz magneto-optical isolator based on graphene-silicon waveguide
Zhao, Dan; Fan, Fei; Li, Tengfei; Tan, Zhiyu; Cheng, Jierong; Chang, Shengjiang
Sci China Inf Sci, 2022, 65(6): 169401
Keywords: graphene; magneto-optical device; isolator; waveguide; terahertz
Cite as: Zhao D, Fan F, Li T F, et al. Terahertz magneto-optical isolator based on graphene-silicon waveguide. Sci China Inf Sci, 2022, 65(6): 169401, doi: 10.1007/s11432-020-3265-2

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Advances in wide-tuning and narrow-linewidth external-cavity diode lasers
Cui, Qiang; Lei, Yuxin; Chen, Yongyi; Qiu, Cheng; Wang, Ye; Zhang, Dexiao; Fan, Lutai; Song, Yue; Jia, Peng; Liang, Lei; Wang, Yubing; Qin, Li; Ning, Yongqiang; Wang, Lijun
Sci China Inf Sci, 2022, 65(8): 181401
Keywords: wide tuning; narrow linewidth; external-cavity diode laser; semiconductor laser; Littrow; Littman
Cite as: Cui Q, Lei Y X, Chen Y Y, et al. Advances in wide-tuning and narrow-linewidth external-cavity diode lasers. Sci China Inf Sci, 2022, 65(8): 181401, doi: 10.1007/s11432-021-3454-7

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Microwave photonics
Yao, Jianping; Capmany, Jose
Sci China Inf Sci, 2022, 65(12): 221401
Keywords: microwave photonics; photonic integrated circuits; microwave photonic link; microwave photonic signal processor; optoelectronic oscillator; radio over fiber
Cite as: Yao J P, Capmany J. Microwave photonics. Sci China Inf Sci, 2022, 65(12): 221401, doi: 10.1007/s11432-021-3524-0

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Proton radiation effects on high-speed silicon Mach-Zehnder modulators for space application
Han, Changhao; Hu, Zhaoyi; Tao, Yuansheng; Fu, Engang; He, Yandong; Yang, Fenghe; Qin, Jun; Wang, Xingjun
Sci China Inf Sci, 2022, 65(12): 222401
Keywords: silicon Mach-Zehnder modulator; proton radiation; space application; silicon photonics; optical communication
Cite as: Han C H, Hu Z Y, Tao Y S, et al. Proton radiation effects on high-speed silicon Mach-Zehnder modulators for space application. Sci China Inf Sci, 2022, 65(12): 222401, doi: 10.1007/s11432-022-3556-0

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Simplified single-end Rayleigh and Brillouin hybrid distributed fiber-optic sensing system
Huang, Linjing; He, Zuyuan; Fan, Xinyu
Sci China Inf Sci, 2023, 66(2): 129404
Keywords: optical fiber sensor; distributed fiber-optic sensing; Rayleigh backscattering; Brillouin backscattering; optical measurement technology
Cite as: Huang L J, He Z Y, Fan X Y. Simplified single-end Rayleigh and Brillouin hybrid distributed fiber-optic sensing system. Sci China Inf Sci, 2023, 66(2): 129404, doi: 10.1007/s11432-022-3554-0

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Quantum algorithm for kernelized correlation filter
Gao, Shang; Pan, Shijie; Yang, Yuguang
Sci China Inf Sci, 2023, 66(2): 129501
Keywords: kernelized correlation filter; quantum computing; circulant matrices; quantum Fourier transform; target tracking
Cite as: Gao S, Pan S J, Yang Y G. Quantum algorithm for kernelized correlation filter. Sci China Inf Sci, 2023, 66(2): 129501, doi: 10.1007/s11432-021-3400-3

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A multiplexed quantum repeater based on absorptive quantum memories
Zhou, Zhengwei
Sci China Inf Sci, 2021, 64(11): 217501
Keywords: quantum memory; quantum repeater; quantum communication; quantum entanglement; quantum network
Cite as: Zhou Z W. A multiplexed quantum repeater based on absorptive quantum memories. Sci China Inf Sci, 2021, 64(11): 217501, doi: 10.1007/s11432-021-3287-6

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Keywords: quantum illumination; displacement operation; antidisplacement operation; quantum entanglement; quantum chernoff bound
Cite as: Zhang S L. Quantum illumination with post-processing of displacement and anti-displacement operations. Sci China Inf Sci, 2021, 64(12): 229501, doi: 10.1007/s11432-020-3037-1

Special Focus on Quantum Information
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Polarization-insensitive quantum key distribution using planar lightwave circuit chips
Zhang, Guo-Wei; Chen, Wei; Fan-Yuan, Guan-Jie; Zhang, Li; Wang, Fang-Xiang; Wang, Shuang; Yin, Zhen-Qiang; He, De-Yong; Liu, Wen; An, Jun-Ming; Guo, Guang-Can; Han, Zheng-Fu
Sci China Inf Sci, 2022, 65(10): 200506
Keywords: polarization insensitive; time-bin; asymmetric Faraday-Michelson interferometer; quantum key distribution; planar lightwave circuit
Cite as: Zhang G-W, Chen W, Fan-Yuan G-J, et al. Polarization-insensitive quantum key distribution using planar lightwave circuit chips. Sci China Inf Sci, 2022, 65(10): 200506, doi: 10.1007/s11432-022-3514-3

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Board games for quantum computers
Wu, Biao; Chen, Hanbo; Luo, Zhikang
Sci China Inf Sci, 2021, 64(2): 122501
Keywords: quantum weiqi; quantum go; weiqi; five in a row; board games
Cite as: Wu B, Chen H B, Luo Z K. Board games for quantum computers. Sci China Inf Sci, 2021, 64(2): 122501, doi: 10.1007/s11432-020-3038-x

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Generation of two-axis countertwisting squeezed spin states via Uhrig dynamical decoupling
Zhang, Jiying; Wu, Shan; Zhang, Yongchang; Zhou, Zhengwei
Sci China Inf Sci, 2021, 64(2): 122502
Keywords: squeezed spin states; uhrig dynamical decoupling; control pulses; quantum control; quantum metrology; quantum information science
Cite as: Zhang J Y, Wu S, Zhang Y C, et al. Generation of two-axis countertwisting squeezed spin states via Uhrig dynamical decoupling. Sci China Inf Sci, 2021, 64(2): 122502, doi: 10.1007/s11432-020-3075-2

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Quantum algorithm and experimental demonstration for the subset sum problem
Zheng, Qilin; Zhu, Pingyu; Xue, Shichuan; Wang, Yang; Wu, Chao; Yu, Xinyao; Yu, Miaomiao; Liu, Yingwen; Deng, Mingtang; Wu, Junjie; Xu, Ping
Sci China Inf Sci, 2022, 65(8): 182501
Keywords: quantum algorithm; subset sum; quadratic speedup; encryption; algorithm complexity
Cite as: Zheng Q L, Zhu P Y, Xue S C, et al. Quantum algorithm and experimental demonstration for the subset sum problem. Sci China Inf Sci, 2022, 65(8): 182501, doi: 10.1007/s11432-021-3334-1

Special Focus on Quantum Information
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Review of noble-gas spin amplification via the spin-exchange collisions
Su, Haowen; Jiang, Min; Peng, Xinhua
Sci China Inf Sci, 2022, 65(10): 200501
Keywords: nuclear spin; noble gas; maser; spin amplification; Floquet system
Cite as: Su H W, Jiang M, Peng X H. Review of noble-gas spin amplification via the spin-exchange collisions. Sci China Inf Sci, 2022, 65(10): 200501, doi: 10.1007/s11432-022-3550-1

Special Focus on Quantum Information
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Hybrid quantum key distribution network
Ren, Siyu; Wang, Yu; Su, Xiaolong
Sci China Inf Sci, 2022, 65(10): 200502
Keywords: quantum network; quantum key distribution; hybrid quantum information; continuous variable; discrete variable
Cite as: Ren S Y, Wang Y, Su X L. Hybrid quantum key distribution network. Sci China Inf Sci, 2022, 65(10): 200502, doi: 10.1007/s11432-022-3509-6

Special Focus on Quantum Information
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Variational quantum attacks threaten advanced encryption standard based symmetric cryptography
Wang, Zeguo; Wei, Shijie; Long, Gui-Lu; Hanzo, Lajos
Sci China Inf Sci, 2022, 65(10): 200503
Keywords: S-DES; VQA; ansatz; cost function; optimization
Cite as: Wang Z G, Wei S J, Long G-L, et al. Variational quantum attacks threaten advanced encryption standard based symmetric cryptography. Sci China Inf Sci, 2022, 65(10): 200503, doi: 10.1007/s11432-022-3511-5

Special Focus on Quantum Information
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Quantum spectral clustering algorithm for unsupervised learning
Li, Qingyu; Huang, Yuhan; Jin, Shan; Hou, Xiaokai; Wang, Xiaoting
Sci China Inf Sci, 2022, 65(10): 200504
Keywords: quantum algorithm; machine learning; spectral clustering; quantum phase estimation; Grover’s search; Hamiltonian simulation
Cite as: Li Q Y, Huang Y H, Jin S, et al. Quantum spectral clustering algorithm for unsupervised learning. Sci China Inf Sci, 2022, 65(10): 200504, doi: 10.1007/s11432-022-3492-x

Special Focus on Quantum Information
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Multi-channel quantum parameter estimation
Bao, Liying; Qi, Bo; Wang, Yabo; Dong, Daoyi; Wu, Rebing
Sci China Inf Sci, 2022, 65(10): 200505
Keywords: quantum metrology; quantum parameter estimation; multi-channel; quantum Fisher information
Cite as: Bao L Y, Qi B, Wang Y B, et al. Multi-channel quantum parameter estimation. Sci China Inf Sci, 2022, 65(10): 200505, doi: 10.1007/s11432-020-3196-x

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A hybrid quantum-classical Hamiltonian learning algorithm
Wang, Youle; Li, Guangxi; Wang, Xin
Sci China Inf Sci, 2023, 66(2): 129502
Keywords: quantum computing; quantum learning; near-term quantum algorithm; quantum-classical algorithm; quantum many-body system
Cite as: Wang Y L, Li G X, Wang X. A hybrid quantum-classical Hamiltonian learning algorithm. Sci China Inf Sci, 2023, 66(2): 129502, doi: 10.1007/s11432-021-3382-2

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Exact quantum query complexity of weight decision problems via Chebyshev polynomials
He X Y, Sun X M, Yang G, et al
Sci China Inf Sci, 2023, 66(2): 129503
Keywords: weight decision problems; chebyshev polynomials; exact quantum query complexity; exact quantum algorithms; quantum computing
Cite as: He X Y, Sun X M, Yang G, et al. Exact quantum query complexity of weight decision problems via Chebyshev polynomials. Sci China Inf Sci, 2023, 66(2): 129503, doi: 10.1007/s11432-021-3468-x