新材料(15) 电路和系统(24) 智能传感(15) 新器件(68) 量子(37) 光电子(31)

新材料(15)

新材料 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 18

Bulk photovoltaic effect in two-dimensional ferroelectric α-In2Se3
Wang, Huiting; Wu, Shuaiqin; Chen, Yan; Zhao, Qianru; Zeng, Jinhua; Yin, Ruotong; Zheng, Yuqing; Liu, Chang; Zhang, Shukui; Lin, Tie; Shen, Hong; Meng, Xiangjian; Ge, Jun; Wang, Xudong; Chu, Junhao; Wang, Jianlu
Sci China Inf Sci, 2025, 68(2): 122401
Keywords: bulk photovoltaic effect; 2D ferroelectrics; 3R α-In2Se3; shift current; self-powered photodetection
Cite as: Wang H T, Wu S Q, Chen Y, et al. Bulk photovoltaic effect in two-dimensional ferroelectric α-In2Se3. Sci China Inf Sci, 2025, 68: 122401, doi: 10.1007/s11432-023-4070-8

新材料 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 6

Dipole-moment modulation of photovoltaic and photoresponse properties in 2H-MoSSe/MoS2 van der Waals heterojunctions under electric field
Wang, Yinkang; Ge, Meng; Tan, Jianing; Cai, Biao; Gang, Ouyang
Sci China Inf Sci, 2025, 68(5): 159402
Keywords: 2H-MoSSe/MoS2; van der Waals heterojunctions; dipole effect; photovoltaics; photoresponse
Cite as: Wang Y K, Ge M, Tan J N, et al. Dipole-moment modulation of photovoltaic and photoresponse properties in 2H-MoSSe/MoS2 van der Waals heterojunctions under electric field. Sci China Inf Sci, 2025, 68: 159402, doi: 10.1007/s11432-024-4344-6

新材料 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 4

Biomimetic cell in-situ self-healing PCL/CNT conductive composites for flexible pressure sensors with high sensitivity and wide linear measurement range
Meng, Xiangyu; Tang, Hongyao; Lu, Xiaozhou; Zhang, Jiayao; Shi, Yaoguang; He, Yumeng; Bao, Weimin
Sci China Inf Sci, 2026, 69(2): 122404
Keywords: biomimetic cell; self-healing; flexible pressure sensor; hierarchical microstructure; high sensitivity; wide linear measurement range
Cite as: Meng X Y, Tang H Y, Lv X Z, et al. Biomimetic cell in-situ self-healing PCL/CNT conductive composites for flexible pressure sensors with high sensitivity and wide linear measurement range. Sci China Inf Sci, 2026, 69: 122404, doi: 10.1007/s11432-025-4610-5

新材料 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 3

Robust optoelectronic dual-mode memristor enabled by ZnO/MoS2 heterojunction for synaptic bionics and in-memory computing
Liu, Xiaoyan; Gui, Youshan; Wang, Zhou; Zhou, Pengcheng; Chen, Junyuan; Guo, Tenglong; Zhang, Xin; Zhang, Suo; Wei, Xian; Wang, Jin; Lian, Xiaojuan; Wan, Xiang; He, Nan; Gu, Yan; Hu, Er-Tao; Chen, Qiang; Ling, Haifeng; Wang, Lei
Sci China Inf Sci, 2026, 69(4): 142405
Keywords: optoelectronic memristor; ZnO-MoS2 heterojunction; reliability; neuromorphic computing; artificial visual system
Cite as: Liu X Y, Gui Y S, Wang Z, et al. Robust optoelectronic dual-mode memristor enabled by ZnO/MoS2 heterojunction for synaptic bionics and in-memory computing. Sci China Inf Sci, 2026, 69: 142405, doi: 10.1007/s11432-025-4674-2

新材料 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 3

Ultrahigh thermal-stable p-type WSe2 transistors with silicon processing-compatible metal-semiconductor contacts
Huang, Junlin; Gao, Li; Chen, Zhangyi; Jia, Zeen; Lin, Yuyin; Hong, Mengyu; Yu, Huihui; Zhang, Xiankun; Zhang, Zheng; Zhang, Yue
Sci China Inf Sci, 2026, 69(3): 132402
Keywords: WSe2 transistors; p-type modulation; contact engineering; oxide layer intercalation; thermal stability
Cite as: Huang J L, Gao L, Chen Z Y, et al. Ultrahigh thermal-stable p-type WSe2 transistors with silicon processing-compatible metal-semiconductor contacts. Sci China Inf Sci, 2026, 69: 132402, doi: 10.1007/s11432-025-4698-1

新材料 REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 3

Two-dimensional van der Waals high-speed photodetectors enhanced by surface and interface engineering
Yu, Yuanfang; Tang, Senyao; Yang, Linjie; Li, Quan; Cao, Fa; Ni, Zhenhua; Lu, Junpeng; Gao, Li
Sci China Inf Sci, 2026, 69(2): 121401
Keywords: two-dimensional materials; surface engineering; interface engineering; heterostructure; high-speed photodetection
Cite as: Yu Y F, Tang S Y, Yang L J, et al. Two-dimensional van der Waals high-speed photodetectors enhanced by surface and interface engineering. Sci China Inf Sci, 2026, 69: 121401, doi: 10.1007/s11432-025-4624-x

新材料 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

Sliding-controllable on-off states in MAX3-based (M=Mn, Ni; A=Si, Ge; X=S, Se) van der Waals tunnel junctions
Tan, Jianing; Ge, Meng; Hu, Huamin; Li, Hai; Ouyang, Gang
Sci China Inf Sci, 2026, 69(1): 112402
Keywords: vdW tunnel junctions; sliding engineering; interface barrier modulation; transport properties; density functional theory
Cite as: Tan J N, Ge M, Hu H M, et al. Sliding-controllable on-off states in MAX3-based (M=Mn, Ni; A=Si, Ge; X=S, Se) van der Waals tunnel junctions. Sci China Inf Sci, 2026, 69: 112402, doi: 10.1007/s11432-025-4516-x

新材料 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

Wafer-scale fabrication of monolayer MoS2 films for two-dimensional electronic devices via multitube atmospheric-pressure chemical vapor deposition
Cheng, Zixuan; Yang, Dingyi; Wang, Yong; Wu, Yizhang; Wu, Biao; Zhang, Jiateng; Liu, Huan; Zhang, Mingwen; Gan, Xuetao; Liu, Yan; Hao, Yue; Han, Genquan
Sci China Inf Sci, 2025, 68(10): 202405
Keywords: atmospheric pressure; chemical vapor deposition; wafer-scale MoS2; second harmonic generation; FeFETs
Cite as: Cheng Z X, Yang D Y, Wang Y, et al. Wafer-scale fabrication of monolayer MoS2 films for two-dimensional electronic devices via multitube atmospheric-pressure chemical vapor deposition. Sci China Inf Sci, 2025, 68: 202405, doi: 10.1007/s11432-025-4526-2

新材料 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

Dielectric metasurface enhanced performance in multilayer WS2 pho- todetector
Zhao, Huijuan; Wang, Weiqi; Ding, Huanlin; Wang, Sumei; Tang, Zemin; Li, Shuhan; Wang, Jiaxuan; Wang, Yufan; Zhou, Qiyuan; Wang, Anran; Yu, Yuanfang; Gao, Li
Sci China Inf Sci, 2025, 68(7): 179403
Keywords: two dimensional materials; photodetectors; metasurface; light trapping; soft nanoimprinting
Cite as: Zhao H J, Wang W Q, Ding H L, et al. Dielectric metasurface enhanced performance in multilayer WS2 pho- todetector. Sci China Inf Sci, 2025, 68: 179403, doi: 10.1007/s11432-025-4362-7

Special Topic: Advanced Optoelectronics Based on Two-Dimensional Materials
新材料 PROGRESS Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

From wafer-scale growth to 3D integration: 2D WSe2 pMOS for next-generation
Jiang, Yi; He, Guiming; Zhao, Bei
Sci China Inf Sci, 2026, 69(7): 170407
Keywords: WSe2; p-type semiconductor; wafer-scale growth; pMOS devices; monolithic 3D integration
Cite as: Jiang Y, He G M, Zhao B. From wafer-scale growth to 3D integration: 2D WSe2 pMOS for next-generation. Sci China Inf Sci, 2026, 69: 170407, doi: 10.1007/s11432-026-4983-6

Special Topic: Advanced Optoelectronics Based on Two-Dimensional Materials
新材料 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Strong optical emission regulated by exciton state in two-dimensional organic molecular crystals
Yang, Yutian; Zheng, Ting; Zhao, Weiwei; Cao, Chenyun; Yang, Fang; Liu, Hongwei; Ni, Zhenhua; Lu, Junpeng
Sci China Inf Sci, 2026, 69(7): 170403
Keywords: two-dimensional materials; organic crystal; aggregation; exciton state; superradiance
Cite as: Yang Y T, Zheng T, Zhao W W, et al. Strong optical emission regulated by exciton state in two-dimensional organic molecular crystals. Sci China Inf Sci, 2026, 69: 170403, doi: 10.1007/s11432-025-4889-4

新材料 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

A memristor model for high-precision dynamic conductance and its application in neuromorphic computing
Hu, Jinhong; Shen, Siyuan; Li, Wen; Chen, Ai; Wu, Jiening; Liu, Zhenqi; Yuan, Rui; Duan, Shukai; Wang, Lidan
Sci China Inf Sci, 2026, 69(6): 169401
Keywords: memristor; memristor model; memristor simulation; analog synapse; phonetic classification
Cite as: Hu J H, Shen S Y, Li W, et al. A memristor model for high-precision dynamic conductance and its application in neuromorphic computing. Sci China Inf Sci, 2026, 69: 169401, doi: 10.1007/s11432-025-4767-6

新材料 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Ambipolar MoS2 enabled through high-ε ferroelectric P(VDF-TrFE)
Diao, Zhaobiao; Wu, Shuaiqin; Chen, Yan; Wang, Lu; Liu, Chang; Wu, Binmin; Wang, Peng; Lin, Tie; Shen, Hong; Meng, Xiangjian; Wang, Xudong; Chu, Junhao; Wang, Jianlu
Sci China Inf Sci, 2026, 69(1): 112401
Keywords: p-type semiconductor; dielectric constant; ferroelectric modulation; MoS2; AFM
Cite as: Diao Z B, Wu S Q, Chen Y, et al. Ambipolar MoS2 enabled through high-ε ferroelectric P(VDF-TrFE). Sci China Inf Sci, 2026, 69: 112401, doi: 10.1007/s11432-025-4505-1

新材料 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Model compression and quantization optimization methods for memristive neural networks
Wang, Yu; Yan, Xiaobing; Shi, Tuo; Lyu, Bo; Qi, Yincheng; Liu, Ying; Xu, Jikang; Yang, Biao; Li, Pengfei
Sci China Inf Sci, 2025, 68(10): 209402
Keywords: memristor; network pruning; sparse neural networks; quantization weight; Bl regularization
Cite as: Wang Y, Yan X B, Shi T, et al. Model compression and quantization optimization methods for memristive neural networks. Sci China Inf Sci, 2025, 68: 209402, doi: 10.1007/s11432-024-4430-6

新材料 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Potential of boron nitride/diamond heterostructures for n- and p-type conduction
Li, Yao; Wang, Chenxu; Li, Qun; Zhang, Jinfeng; Su, Kai; Hu, Jichao; Lin, Tao; Ren, Zeyang; Zhu, Jiaduo; Zhang, Yachao; Hao, Yue
Sci China Inf Sci, 2025, 68(8): 189401
Keywords: boron nitride; diamond; heterostructure; p-type; n-type
Cite as: Li Y, Wang C X, Li Q, et al. Potential of boron nitride/diamond heterostructures for n- and p-type conduction. Sci China Inf Sci, 2025, 68: 189401, doi: 10.1007/s11432-024-4361-4

电路和系统(24)

电路和系统 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 12

A dry-electrode enabled ECG-on-Chip with arrhythmia-aware data transmission
Xu, Xinzi; Suo, Yanxing; Zhao, Yang; Zhou, Peiyi; Han, Xiao; Cai, Qiao; Wang, Min; Yuan, Jiajun; Zhao, Liebin; Li, Yongfu; Wang, Guoxing; Lian, Yong
Sci China Inf Sci, 2025, 68(2): 122405
Keywords: ECG; flexible dry electrodes; analog front-end; abnormality detection ASIC; wireless transmission
Cite as: Xu X Z, Suo Y X, Zhao Y, et al. A dry-electrode enabled ECG-on-Chip with arrhythmia-aware data transmission. Sci China Inf Sci, 2025, 68: 122405, doi: 10.1007/s11432-024-4196-0

电路和系统 LETTER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 3

A reference-free and derivative-insensitive all-digital calibration technique for timing-skew in TI-ADCs
Dang, Li; Liu, Shubin; Ding, Ruixue; Liu, Chengyuan; Liang, Hongzhi; Han, Haolin; Cao, Yue; Zhu, Zhangming
Sci China Inf Sci, 2025, 68(7): 179402
Keywords: analog-to-digital converters (ADCs); timing-skew calibration; singularity; improved binary search; effective bandwidth
Cite as: Dang L, Liu S B, Ding R X, et al. A reference-free and derivative-insensitive all-digital calibration technique for timing-skew in TI-ADCs. Sci China Inf Sci, 2025, 68: 179402, doi: 10.1007/s11432-024-4352-0

电路和系统 LETTER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

Analysis and solution of streak effect in high dynamic range CMOS image sensors
Zha, Wanbin; Xu, Jiangtao; Ao, Jinghua; Nie, Kaiming; Gao, Zhiyuan
Sci China Inf Sci, 2025, 68(1): 119404
Keywords: CMOS image sensor; high dynamic range; streak effect; dual conversion gain; pixel design
Cite as: Zha W B, Xu J T, Ao J H, et al. Analysis and solution of streak effect in high dynamic range CMOS image sensors. Sci China Inf Sci, 2025, 68: 119404, doi: 10.1007/s11432-024-4198-8

电路和系统 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

A 22-nm 64-kB lightning-like hybrid computing-in-memory macro with a compressed adder tree and analog-storage quantizers for transformer and CNNs
Guo, An; Chen, Xi; Dong, Fangyuan; Chen, Jinwu; Yuan, Zhihang; Hu, Xing; Sun, Guangyu; Li, Xiaomin; Basu, Arindam; Yang, Jun; Si, Xin
Sci China Inf Sci, 2025, 68(12): 222401
Keywords: hybrid domain; computing-in-memory; approximate calculation; artificial intelligence; analog-storage quantizer circuit
Cite as: Guo A, Chen X, Dong F Y, et al. A 22-nm 64-kB lightning-like hybrid computing-in-memory macro with a compressed adder tree and analog-storage quantizers for transformer and CNNs. Sci China Inf Sci, 2025, 68: 222401, doi: 10.1007/s11432-025-4642-0

电路和系统 REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

Developments and challenges of silicon-based millimeter-wave integrated phased arrays: system, circuit, and device modeling
Zhang, Qingfeng; Liu, Huihua; Yu, Yiming; Wu, Yunqiu; Zhao, Chenxi; Zhang, Jingzhi; Kang, Kai
Sci China Inf Sci, 2025, 68(9): 191401
Keywords: mm-Wave; silicon-based integrated circuits; phased array; device modeling; wireless communication
Cite as: Zhang Q F, Liu H H, Yu Y M, et al. Developments and challenges of silicon-based millimeter-wave integrated phased arrays: system, circuit, and device modeling. Sci China Inf Sci, 2025, 68: 191401, doi: 10.1007/s11432-024-4387-5

电路和系统 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

A D-band CMOS eight-channel I/Q transmitter with enhanced LO feed-through suppression
Jiang, Ning; He, Pingyang; Liu, Huiqi; Zhao, Guohua; Zhao, Ming; Zhu, Dalong; Zhao, Dixian
Sci China Inf Sci, 2025, 68(7): 179401
Keywords: D-band; CMOS; I/Q modulation; LO feed-through; transmitter
Cite as: Jiang N, He P Y, Liu H Q, et al. A D-band CMOS eight-channel I/Q transmitter with enhanced LO feed-through suppression. Sci China Inf Sci, 2025, 68: 179401, doi: 10.1007/s11432-024-4346-8

电路和系统 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

Attar: RRAM-based in-memory attention accelerator with software-hardware co-optimization
Li, Bing; Qi, Ying; Wang, Ying; Han, Yinhe
Sci China Inf Sci, 2025, 68(3): 132401
Keywords: RRAM; computing-in-memory; attention; pruning; quantization
Cite as: Li B, Qi Y, Wang Y, et al. Attar: RRAM-based in-memory attention accelerator with software-hardware co-optimization. Sci China Inf Sci, 2025, 68: 132401, doi: 10.1007/s11432-024-4247-4

电路和系统 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

Mitigating methodology of hardware non-ideal characteristics for non-volatile memory based neural networks
Han, Lixia; Huang, Peng; Wang, Yijiao; Zhou, Zheng; Yang, Haozhang; Chen, Yiyang; Liu, Xiaoyan; Kang, Jinfeng
Sci China Inf Sci, 2025, 68(2): 122403
Keywords: computing in memory; neural network accelerators; non-volatile memory; hardware non-ideal characteristics; software-hardware co-design
Cite as: Han L X, Huang P, Wang Y J, et al. Mitigating methodology of hardware non-ideal characteristics for non-volatile memory based neural networks. Sci China Inf Sci, 2025, 68: 122403, doi: 10.1007/s11432-023-4021-y

电路和系统 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

A 250 Mbps 6.5375 Mb/s/µm2 PVT-robust TRNG with charge-trap programming (CTP)-based dynamic 0/1 bias cancellation
Lin, Ye; Shen, Junjie; Jiang, Anying; Du, Yuan; Du, Li
Sci China Inf Sci, 2026, 69(9): 199403
Keywords: TRNGs; StrongARM comparator; CTP-based dynamic 0/1 bias cancellation; charge-trap programming; light erase operation
Cite as: Lin Y, Shen J J, Jiang A Y, et al. A 250 Mbps 6.5375 Mb/s/µm2 PVT-robust TRNG with charge-trap programming (CTP)-based dynamic 0/1 bias cancellation. Sci China Inf Sci, 2026, 69: 199403, doi: 10.1007/s11432-025-4824-y

电路和系统 NEWS & VIEWS Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

PKP: open-source compact models and predictive PDK for GAA technology
Peng, Baokang; Teng, Feiyu; Cheng, Guoyao; Wu, Heng; Zhang, Lining; Wang, Runsheng; Huang, Ru
Sci China Inf Sci, 2026, 69(9): 197401
Keywords: process design kit; gate-all-around field-effect transistor; device compact model; design-technology co-optimization; standard cell
Cite as: Peng B K, Teng F Y, Cheng G Y, et al. PKP: open-source compact models and predictive PDK for GAA technology. Sci China Inf Sci, 2026, 69: 197401, doi: 10.1007/s11432-025-4805-5

电路和系统 MOOP Supplementary Video Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

PAICar: a prototype of an embodied neuromorphic intelligent robot platform
Feng, Shuo; Liu, Mingkai; Zhong, Jingyi; Chen, Guang; Zhong, Yi; Wang, Zilin; Zou, Chenglong; Cui, Xiaoxin; Cao, Jian; Wang, Yuan
Sci China Inf Sci, 2026, 69(6): 164401
Keywords: embodied neuromorphic intelligence; spiking neural network; neuromorphic chip; neurorobotics; brain-inspired intelligent systems
Cite as: Feng S, Liu M K, Zhong J Y, et al. PAICar: a prototype of an embodied neuromorphic intelligent robot platform. Sci China Inf Sci, 2026, 69: 164401, doi: 10.1007/s11432-025-4706-x

SCIS Selected Articles on Large Language Models (LLM)
电路和系统 POSITION PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Large processor chip model
Chang, Kaiyan; Chen, Mingzhi; Chen, Yunji; Chen, Zhirong; Fan, Dongrui; Gong, Junfeng; Guo, Nan; Han, Yinhe; Hao, Qinfen; Hou, Shuo; Huang, Xuan; Jin, Pengwei; Ke, Changxin; Li, Cangyuan; Li, Guangli; Li, Huawei; Li, Kuan; Li, Naipeng; Liang, Shengwen; Liu, Cheng; Liu, Hongwei; Liu, Jiahua; Lv, Junliang; Mu, Jianan; Qin, Jin; Sun, Bin; Wang, Chenxi; Wang, Duo; Wang, Mingjun; Wang, Ying; Wu, Chenggang; Wu, Peiyang; Wu, Teng; Xiao, Xiao; Xie, Mengyao; Xiong, Chenwei; Xu, Ruiyuan; Yan, Mingyu; Ye, Xiaochun; Yu, Kuai; Zhang, Rui; Zhang, Shuoming; Zhao, Jiacheng
Sci China Inf Sci, 2026, 69(5): 153401
Keywords: large processor chip model; LLMs; automated design; 3D Gaussian splatting
Cite as: Chang K Y, Chen M Z, Chen Y J, et al. Large processor chip model. Sci China Inf Sci, 2026, 69: 153401, doi: 10.1007/s11432-025-4739-1

电路和系统 LETTER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

A 67 dB-SNDR 1.6 GS/s fully passive SAR-assisted noise-shaping pipelined ADC with gain error shaping
Zhu, Zhangming; Zhang, Xianghui; Zhang, Yanbo
Sci China Inf Sci, 2026, 69(3): 139404
Keywords: analog-to-digital converter; noise shaping; gain error shaping; successive approximation register; SAR-assisted noise-shaping pipelined ADC; passive residue transfer; multi-stage noise shaping
Cite as: Zhu Z M, Zhang X H, Zhang Y B. A 67 dB-SNDR 1.6 GS/s fully passive SAR-assisted noise-shaping pipelined ADC with gain error shaping. Sci China Inf Sci, 2026, 69: 139404, doi: 10.1007/s11432-025-4628-9

电路和系统 LETTER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

FPGA-based hardware accelerator designed for convolutional residual spiking neural networks
Zhang, Yahui; Xiang, Shuiying; Du, Chenyang; Zou, Tao; Guo, Xingxing; Zheng, Ling; Yu, Licun; Han, Genquan; Hao, Yue
Sci China Inf Sci, 2026, 69(3): 139403
Keywords: residual spiking neural network; FPGA; accelerator; energy efficiency; high-speed
Cite as: Zhang Y H, Xiang S Y, Du C Y, et al. FPGA-based hardware accelerator designed for convolutional residual spiking neural networks. Sci China Inf Sci, 2026, 69: 139403, doi: 10.1007/s11432-025-4686-2

电路和系统 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

2.5 kV/674 MW/cm2 or 100 A/2 kV β-Ga2O3 heterojunction diodes with large surge current and small recovery time
Feng, Yitao; Zhou, Hong; Fang, Hao; Zhang, Xiaorong; Chen, Yanbo; Tian, Guotao; Hao, Yue; Zhang, Jincheng
Sci China Inf Sci, 2026, 69(3): 139402
Keywords: β-Ga2O3; PN diodes; high current; high breakdown voltage; high PFOM
Cite as: Feng Y T, Zhou H, Fang H, et al. 2.5 kV/674 MW/cm2 or 100 A/2 kV β-Ga2O3 heterojunction diodes with large surge current and small recovery time. Sci China Inf Sci, 2026, 69: 139402, doi: 10.1007/s11432-025-4680-6

电路和系统 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

EE-Extractor: a near-sensor real-time effective event extractor for dynamic vision sensor
Li, Feiqiang; Huang, Yujie; Wang, Mingyu; Li, Wenhong; Jing, Ming'e; Zeng, Xiaoyang
Sci China Inf Sci, 2026, 69(2): 129405
Keywords: dynamic vision sensor; spatiotemporal filter; real-time; clusterer; near-sensor; FPGA; ASIC
Cite as: Li F Q, Huang Y J, Wang M Y, et al. EE-Extractor: a near-sensor real-time effective event extractor for dynamic vision sensor. Sci China Inf Sci, 2026, 69: 129405, doi: 10.1007/s11432-025-4641-7

电路和系统 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

An area/energy-efficient RRAM computing-in-memory macro with fully-charge-domain multi-bit computation
Li, Zhi; Yan, Shengzhe; Wang, Jun; Dai, Zhuoyu; Guo, Zeyu; Cong, Zhaori; Qian, Zhihang; Fu, Xiangqu; Zheng, Xu; Dou, Chunmeng; Shang, Dashan; Yue, Jinshan
Sci China Inf Sci, 2026, 69(1): 119406
Keywords: RRAM; computing-in-memory; charge-domain; multi-bit; neural network
Cite as: Li Z, Yan S Z, Wang J, et al. An area/energy-efficient RRAM computing-in-memory macro with fully-charge-domain multi-bit computation. Sci China Inf Sci, 2026, 69: 119406, doi: 10.1007/s11432-025-4615-6

电路和系统 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

A reconfigurable 8×8 SPAD array LiDAR receiver with on-chip noise suppression and reflectivity compensation for high-frame-rate applications
Wei, Zichen; Liu, Dongsheng; Yu, Yu
Sci China Inf Sci, 2026, 69(1): 119405
Keywords: direct time of flight; dTOF; histogram; light detection and ranging; LiDAR; single-photon avalanche diodes; SPADs; time-to-digital converter; TDC; reconfigurable optical area; walk error compensation
Cite as: Wei Z C, Liu D S, Yu Y. A reconfigurable 8×8 SPAD array LiDAR receiver with on-chip noise suppression and reflectivity compensation for high-frame-rate applications. Sci China Inf Sci, 2026, 69: 119405, doi: 10.1007/s11432-025-4513-x

电路和系统 PERSPECTIVE Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

IC+AI: a no-human-in-loop design paradigm?
Liu, Chengjie; Yang, Jun
Sci China Inf Sci, 2025, 68(12): 226401
Keywords: electronic design automation; large language model; artificial intelligence; data mining; prior knowledge; integrated circuit
Cite as: Liu C J, Yang J. IC+AI: a no-human-in-loop design paradigm?. Sci China Inf Sci, 2025, 68: 226401, doi: 10.1007/s11432-025-4590-5

电路和系统 LETTER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

A hybrid-integrated GaN Doherty PA module with output harmonic control for small cells
Wang, Xiyu; Lv, Xiaolin; Li, Wenming; Wang, Dehan; Cui, Kai; Chen, Wenhua
Sci China Inf Sci, 2025, 68(11): 219402
Keywords: hybrid-integrated; GaN; doherty PA;, harmonic control; module
Cite as: Wang X Y, Lv X L, Li W M, et al. A hybrid-integrated GaN Doherty PA module with output harmonic control for small cells. Sci China Inf Sci, 2025, 68: 219402, doi: 10.1007/s11432-024-4476-5

电路和系统 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

An energy-efficient FeFET-based computing-in-memory macro using BEOL-integrated HZO ferroelectric capacitors
Li, Weizeng; Zhou, Zhidao; Wang, Linfang; Zhu, Junyu; Shen, Junzhe; Hu, Hongyang; Wang, Baihan; Li, Zhi; Ye, Wang; Han, Zhongze; Gao, Hanghang; Dou, Chunmeng
Sci China Inf Sci, 2025, 68(10): 209405
Keywords: non volatile memory; emerging memory; in-memory compute; HZO BEOL FeFET; artificial intelligence
Cite as: Li W Z, Zhou Z D, Wang L F, et al. An energy-efficient FeFET-based computing-in-memory macro using BEOL-integrated HZO ferroelectric capacitors. Sci China Inf Sci, 2025, 68: 209405, doi: 10.1007/s11432-025-4454-2

电路和系统 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Highly efficient Doherty power amplifier with peak/backoff joint matching
Yuan, Zoufeng; Yin, Yun; Zhang, Naiqian; Pei, Yi; Liu, Ming; Xu, Hongtao
Sci China Inf Sci, 2025, 68(10): 209403
Keywords: doherty power amplifier; GaN; high efficiency; harmonic control; output power backoff
Cite as: Yuan Z F, Yin Y, Zhang N Q, et al. Highly efficient Doherty power amplifier with peak/backoff joint matching. Sci China Inf Sci, 2025, 68: 209403, doi: 10.1007/s11432-024-4427-8

电路和系统 LETTER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

An 85 mm×89 mm 64M pixel high-speed CMOS image sensor with a negative capacitance circuit
Xu, Ruiming; Guo, Zhongjie; Liu, Suiyang; Yu, Ningmei; Yang, Yuan; Wu, Longsheng
Sci China Inf Sci, 2025, 68(4): 149402
Keywords: CMOS image sensors; large array; high-speed readout; column parallel; negative capacitance circuit
Cite as: Xu R M, Guo Z J, Liu S Y, et al. An 85 mm×89 mm 64M pixel high-speed CMOS image sensor with a negative capacitance circuit. Sci China Inf Sci, 2025, 68: 149402, doi: 10.1007/s11432-024-4308-5

电路和系统 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Software-defined process-near-memory architecture using 3D hybrid bonding integration
Xu, Anlin; Deng, Chenchen; Zhu, Jianfeng; Wang, Yao; Wei, Shaojun; Liu, Leibo
Sci China Inf Sci, 2025, 68(1): 112402
Keywords: software-defined chips; process near memory; energy efficiency; dynamic reconfiguration; domain specific
Cite as: Xu A L, Deng C C, Zhu J F, et al. Software-defined process-near-memory architecture using 3D hybrid bonding integration. Sci China Inf Sci, 2025, 68: 112402, doi: 10.1007/s11432-023-3965-1

智能传感(15)

智能传感 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 16

A stretchable, ionic conductive, and adhesive patch electrode with ultra-low on- skin impedance for electrophysiological signal recording
Li, Yang; Gu, Yuzhe; Qian, Sheng; Pang, Yuncong; Yu, Aoxi; Zheng, Shuwen; Xia, Wenjie; Liao, Yuan; Liu, Baoguang; Liu, Shujuan; Zhao, Qiang
Sci China Inf Sci, 2025, 68(2): 129402
Keywords: sensors; bioelectronics; patch electrodes; Ionic gels; electrophysiological recordings
Cite as: Li Y, Gu Y Z, Qian S, et al. A stretchable, ionic conductive, and adhesive patch electrode with ultra-low on- skin impedance for electrophysiological signal recording. Sci China Inf Sci, 2025, 68: 129402, doi: 10.1007/s11432-024-4246-9

智能传感 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

High-sensitivity piezoelectric composite ultrasonic transducers based on Fresnel lenses for high-resolution imaging
Li, Zhaoxi; Yang, Yiheng; Hou, Chenxue; Wei, Xiongwei; Quan, Yi; Lu, Xiaozhou; Fei, Chunlong; Bao, Weimin; Yang, Yintang
Sci China Inf Sci, 2025, 68(7): 179404
Keywords: multidimension composite structure; piezoelectric composite materials; fresnel lenses; ultrasonic imaging; ultrasonic transducer
Cite as: Li Z X, Yang Y H, Hou C X, et al. High-sensitivity piezoelectric composite ultrasonic transducers based on Fresnel lenses for high-resolution imaging. Sci China Inf Sci, 2025, 68: 179404, doi: 10.1007/s11432-024-4359-2

智能传感 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

Frequency scaling and elastic transition in HF–VHF WS2 NEMS resonators
Zhu, Jiankai; Lv, Chenfei; Su, Ziluo; Xu, Bo; Xiao, Fei; Jia, Hao; Wang, Zenghui
Sci China Inf Sci, 2026, 69(8): 189401
Keywords: nanoelectromechanical systems; frequency scaling; elastic transition; 2D materials; NEMS resonators
Cite as: Zhu J K, Lv C F, Su Z L, et al. Frequency scaling and elastic transition in HF–VHF WS2 NEMS resonators. Sci China Inf Sci, 2026, 69: 189401, doi: 10.1007/s11432-025-4709-4

智能传感 LETTER Supplementary Video Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

Wide-range 3D printed stretchable triboelectric sensor for multi-parameter body monitoring and intelligent human-machine interaction
Yang, Yun; Wang, Ziheng; Cai, Tingting; Xue, Shuping; Zhang, Zhibang; Zhang, Zongwei; Zhang, Yingying; Li, Hui
Sci China Inf Sci, 2026, 69(6): 169402
Keywords: stretchable triboelectric sensor; 3D printing; pulse monitoring; respiratory monitoring; gesture recognition
Cite as: Yang Y, Wang Z H, Cai T T, et al. Wide-range 3D printed stretchable triboelectric sensor for multi-parameter body monitoring and intelligent human-machine interaction. Sci China Inf Sci, 2026, 69: 169402, doi: 10.1007/s11432-025-4769-2

智能传感 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

Heat-sensitive mode-localized current sensor with ultra-high sensitivity
Li, Han; Hao, Yongcun; Chang, Honglong
Sci China Inf Sci, 2026, 69(1): 112404
Keywords: mode-localized; current sensor; V-shaped beam; thermal expansion force; ultra-high sensitivity
Cite as: Li H, Hao Y C, Chang H L. Heat-sensitive mode-localized current sensor with ultra-high sensitivity. Sci China Inf Sci, 2026, 69: 112404, doi: 10.1007/s11432-025-4599-8

智能传感 LETTER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

A ScAlN thin-film-based piezoelectric fused silica ring gyroscope exhibiting 0.45°/h bias instability
Feng, Ronghui; Li, Zheng; Liang, Shuiyang; Li, Qingsong; Liu, Sheng; Xiao, Dingbang; Wu, Guoqiang
Sci China Inf Sci, 2026, 69(9): 199402
Keywords: microelectromechanical systems; MEMS; ring gyroscope; fused silica; piezoelectric; bias instability
Cite as: Feng R H, Li Z, Liang S Y, et al. A ScAlN thin-film-based piezoelectric fused silica ring gyroscope exhibiting 0.45°/h bias instability. Sci China Inf Sci, 2026, 69: 199402, doi: 10.1007/s11432-025-4806-3

智能传感 POSITION PAPER Webpage Webpage-cn SpringerLink Google Scholar

Transcending natural evolution in the age of artificial intelligence
Guo P W, Jia X Y, Tao L-Q, et al
Sci China Inf Sci, 2026, 69(9): 193401
Keywords: human-machine symbiosis; embodiment threshold; evolutionary tempo mismatch; brain-computer interface; adaptive gov- ernance; flexible bioelectronics
Cite as: Guo P W, Jia X Y, Tao L-Q, et al. Transcending natural evolution in the age of artificial intelligence. Sci China Inf Sci, 2026, 69: 193401, doi: 10.1007/s11432-026-5041-7

智能传感 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Ultralow-crosstalk, microsecond-response resonant SAW multidimensional force sensor for robotic arm integration
Li, Fen; Hou, Xiaojuan; Zhang, Xin; Zhao, Huipeng; Gao, Weichun; Hu, Sha; Wang, Zhe; Geng, Wenping; He, Jian; Chou, Xiujian
Sci China Inf Sci, 2026, 69(9): 192403
Keywords: surface acoustic wave; multidimensional force sensors; 128 degrees YX LiNbO; ultralow-crosstalk; robotic arm
Cite as: Li F, Hou X J, Zhang X, et al. Ultralow-crosstalk, microsecond-response resonant SAW multidimensional force sensor for robotic arm integration. Sci China Inf Sci, 2026, 69: 192403, doi: 10.1007/s11432-025-4871-2

智能传感 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

A high-performance hydrogen sensor for application in distributed gas monitoring networks
Liu, Xin; Yang, Huabin; Li, Hanhui; Guo, Qiming; Cui, Baile; Mao, Haiyang; Zhou, Na
Sci China Inf Sci, 2026, 69(8): 182401
Keywords: hydrogen sensor; gas thermal conduction; integrated module; CMOS process; mixed gas detection
Cite as: Liu X, Yang H B, Li H H, et al. A high-performance hydrogen sensor for application in distributed gas monitoring networks. Sci China Inf Sci, 2026, 69: 182401, doi: 10.1007/s11432-025-4827-y

Special Topic: Advanced Optoelectronics Based on Two-Dimensional Materials
智能传感 REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Mechanical modulation of optical properties in 2D materials
Zhang, Zejuan; Pei, Shenghai; Wang, Luming; Yang, Lijuan; Huang, Ming; Xia, Juan; Wang, Zenghui
Sci China Inf Sci, 2026, 69(7): 170402
Keywords: 2D materials; bandgap modulation; phonon dynamics; optical properties; strain engineering
Cite as: Zhang Z J, Pei S H, Wang L M, et al. Mechanical modulation of optical properties in 2D materials. Sci China Inf Sci, 2026, 69: 170402, doi: 10.1007/s11432-025-4931-2

智能传感 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

AFPM: alignment-based frame patch modeling for cross-dataset EEG decoding
Chen, Xiaoqing; Li, Siyang; Wu, Dongrui
Sci China Inf Sci, 2026, 69(6): 162403
Keywords: electroencephalogram; brain-computer interface; cross dataset; data alignment; rehabilitation engineering; domain generalization
Cite as: Chen X Q, Li S Y, Wu D R. AFPM: alignment-based frame patch modeling for cross-dataset EEG decoding. Sci China Inf Sci, 2026, 69: 162403, doi: 10.1007/s11432-025-4736-2

智能传感 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Electrostatically gated dissipation control in two-dimensional nanoelectromechanical resonators via strain-amplitude antagonism for record 928% Q tunability
Jiang, Qinyuan; Fang, Jiawei; Chen, Junfan; Guo, Menglin; Zhang, Ce; Zhang, Xinru; Ding, Yongxi; Wang, You; Song, Haizhi; Zhou, Qiang; Arutyunov, Konstantin Yu.; Guo, Guangcan; Hou, Wenjie; Deng, Guangwei
Sci China Inf Sci, 2026, 69(6): 162402
Keywords: 2D NEMS; quality factor; strain tuning; MoS2 resonators; graphene resonators
Cite as: Jiang Q Y, Fang J W, Chen J F, et al. Electrostatically gated dissipation control in two-dimensional nanoelectromechanical resonators via strain-amplitude antagonism for record 928% Q tunability. Sci China Inf Sci, 2026, 69: 162402, doi: 10.1007/s11432-025-4716-6

智能传感 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

A flexible ion-electronic sensor device with thermal drift suppression for decoupled pressure-temperature sensing
Wu, Guirong; Su, Hao; Wang, Yihang; Su, Zhixuan; Xu, Jing; Shang, Ruisi; Wang, Ran; Zhu, Mengju; Huang, Zekai; Xue, Chenyang; Wang, Yong; Gao, Libo
Sci China Inf Sci, 2026, 69(6): 162401
Keywords: ion-electronic; wireless; pressure-temperature; high sensitivity; excellent linearity
Cite as: Wu G R, Su H, Wang Y H, et al. A flexible ion-electronic sensor device with thermal drift suppression for decoupled pressure-temperature sensing. Sci China Inf Sci, 2026, 69: 162401, doi: 10.1007/s11432-025-4675-6

智能传感 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Unveiling in-plane and out-of-plane phonon anisotropy in NbIrTe4 through polarization-resolved Raman spectroscopy
Wen, Ting; Wang, Yalan; Cai, Shuang; Su, Ziluo; Wu, Jiaqi; Qin, Jiaze; Jiao, Chenyin; Zhang, Zejuan; Wang, Zenghui; Pei, Shenghai
Sci China Inf Sci, 2026, 69(4): 142402
Keywords: out-of-plane; NbIrTe4; anisotropy; polarization-resolved Raman spectroscopy; 2D materials
Cite as: Wen T, Wang Y L, Cai S, et al. Unveiling in-plane and out-of-plane phonon anisotropy in NbIrTe4 through polarization-resolved Raman spectroscopy. Sci China Inf Sci, 2026, 69: 142402, doi: 10.1007/s11432-025-4600-y

智能传感 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Human fatigue assessment method based on plantar pressure distribution and limb movement monitoring
Yuan, Mengjiao; Qian, Shuo; Zhang, Jie; Bi, Xiaoxue; Wu, Pengfei; Guo, Yangyanhao; Yang, Shuting; Hou, Xiaojuan; Lan, Zhiqiang; He, Jian; Chou, Xiujian
Sci China Inf Sci, 2025, 68(11): 219401
Keywords: exercise fatigue; machine learning; smart insole; real-time dynamic monitoring; model prediction
Cite as: Yuan M J, Qian S, Zhang J, et al. Human fatigue assessment method based on plantar pressure distribution and limb movement monitoring. Sci China Inf Sci, 2025, 68: 219401, doi: 10.1007/s11432-023-4489-8

新器件(68)

新器件 LETTER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 18

1.56 kV/30 A vertical β-Ga2O3 Schottky barrier diodes with composite edge terminations
Feng, Yitao; Zhou, Hong; Alghamdi, Sami; Fang, Hao; Zhang, Xiaorong; Chen, Yanbo; Tian, Guotao; Wasly, Saud; Hao, Yue; Zhang, Jincheng
Sci China Inf Sci, 2025, 68(2): 129401
Keywords: Ga2O3; Schottky diodes; high current; high breakdown voltage; edge termination; low resistance; industrial-level; power
Cite as: Feng Y T, Zhou H, Alghamdi S, et al. 1.56 kV/30 A vertical β-Ga2O3 Schottky barrier diodes with composite edge terminations. Sci China Inf Sci, 2025, 68: 129401, doi: 10.1007/s11432-024-4204-9

Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
新器件 REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 13

Ferroelectric materials, devices, and chips technologies for advanced computing and memory applications: development and challenges
Yu, Xiao; Zhong, Ni; Cheng, Yan; Xin, Tianjiao; Luo, Qing; Gong, Tiancheng; Chen, Jiezhi; Wu, Jixuan; Cheng, Ran; Fu, Zhiyuan; Tang, Kechao; Luo, Jin; Ren, Tianling; Xue, Fei; Chen, Lin; Wang, Tianyu; Li, Xueqing; Li, Xiuyan; Wang, Ping; Wang, Xinqiang; Sun, Jie; Jiang, Anquan; Du, Peiyuan; Chen, Bing; Jin, Chengji; Chen, Jiajia; Qian, Haoji; Mao, Wei; Zheng, Siying; Liu, Huan; Xu, Haiwen; Liu, Can; Shen, Zhihao; Li, Xiaoxi; Li, Bochang; Luo, Zheng-Dong; Zhou, Jiuren; Liu, Yan; Hao, Yue; Han, Genquan
Sci China Inf Sci, 2025, 68(6): 160401
Keywords: ferroelectric; HfO2; zirconium oxide; ZrO2; wurtzite; AlScN; FeRAM; FeFET
Cite as: Yu X, Zhong N, Cheng Y, et al. Ferroelectric materials, devices, and chips technologies for advanced computing and memory applications: development and challenges. Sci China Inf Sci, 2025, 68: 160401, doi: 10.1007/s11432-025-4432-x

新器件 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 12

Smaller, faster, lower-power analog RRAM matrix computing circuits without performance compromise
Luo, Yubiao; Zuo, Pushen; Wang, Shiqing; Sun, Zhong; Huang, Ru
Sci China Inf Sci, 2025, 68(2): 122402
Keywords: analog computing; in-memory computing; matrix; resistive memory; conductance compensation
Cite as: Luo Y B, Zuo P S, Wang S Q, et al. Smaller, faster, lower-power analog RRAM matrix computing circuits without performance compromise. Sci China Inf Sci, 2025, 68: 122402, doi: 10.1007/s11432-023-3990-4

新器件 LETTER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 7

Breakdown voltage over 10 kV β-Ga2O3 heterojunction FETs with RESURF structure
Wang, Chenlu; Sun, Sihan; Su, Chunxu; Zhou, Hong; Zhang, Jincheng; Hao, Yue
Sci China Inf Sci, 2025, 68(6): 169401
Keywords: Ga2O3; heterojunction; JFET; Breakdown voltage; RESURF
Cite as: Wang C L, Sun S H, Su C X, et al. Breakdown voltage over 10 kV β-Ga2O3 heterojunction FETs with RESURF structure. Sci China Inf Sci, 2025, 68: 169401, doi: 10.1007/s11432-024-4332-4

新器件 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 7

MoS2 synaptic transistor with one-step manufacture
Guo, Yihao; Wang, Yang; Deng, Wenjie; Wu, Yi; Li, Jingtao; Li, Kexin; Zhao, Yuehui; Yu, Songlin; Wang, Xiaoting; Zhang, Yongzhe; Yan, Hui
Sci China Inf Sci, 2025, 68(1): 112401
Keywords: process optimization; artificial synaptic device; one-step manufacture; synaptic plasticity; bionic simulation
Cite as: Guo Y H, Wang Y, Deng W J, et al. MoS2 synaptic transistor with one-step manufacture. Sci China Inf Sci, 2025, 68: 112401, doi: 10.1007/s11432-024-4093-1

新器件 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 6

Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT
Jia, Mao; Hou, Bin; Yang, Ling; Zhang, Meng; Wu, Mei; Lu, Hao; Hong, Xitong; Xue, Zhiqiang; Du, Jiale; Chang, Qingyuan; Xiao, Qian; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2025, 68(5): 159401
Keywords: GaN HEMT; normally-off; Cu gate stack; threshold voltage stability; gate conduction mechanisms
Cite as: Jia M, Hou B, Yang L, et al. Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT. Sci China Inf Sci, 2025, 68: 159401, doi: 10.1007/s11432-024-4343-5

Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
新器件 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 5

Enhanced memory window and reliability of α-IGZO FeFET enabled by atomic-layer-deposited HfO2 interfacial layer
Liu, Yinchi; Lu, Xun; Li, Shiyu; Zhang, Hao; Yang, Jining; Guo, Yeye; Golosov, Dmitriy Anatolyevich; Gu, Chenjie; Lu, Hongliang; Ji, Zhigang; Ding, Shijin; Liu, Wenjun
Sci China Inf Sci, 2025, 68(6): 160405
Keywords: HfO2; interfacial layer; Hf0.5Zr0.5O2; memory window; reliability
Cite as: Liu Y C, Lu X, Li S Y, et al. Enhanced memory window and reliability of α-IGZO FeFET enabled by atomic-layer-deposited HfO2 interfacial layer. Sci China Inf Sci, 2025, 68: 160405, doi: 10.1007/s11432-024-4429-7

新器件 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 5

Performance limit prediction of atomically thin In2O3 transistors
Yang, Zongmeng; Fang, Shibo; Xu, Linqiang; Li, Qiuhui; Dong, Jichao; Li, Ying; Wu, Baochun; Ghafoor, Mughira; Yang, Peiqi; Guo, Ying; Hou, Shimin; Luo, Zhaochu; Lu, Jing
Sci China Inf Sci, 2025, 68(4): 149403
Keywords: In2O3; ab initio quantum transport simulation; ITRS; electron-phonon coupling; thin film transistor
Cite as: Yang Z M, Fang S B, Xu L Q, et al. Performance limit prediction of atomically thin In2O3 transistors. Sci China Inf Sci, 2025, 68: 149403, doi: 10.1007/s11432-024-4316-6

Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
新器件 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 4

Polynomial geometric transformation based on IGZO charge trapping RAM array for machine vision calibration
Bao, Lin; Zhang, Haisu; Wang, Zongwei; Shan, Linbo; Wang, Cuimei; Cai, Yimao; Huang, Shanguo
Sci China Inf Sci, 2025, 68(6): 160403
Keywords: in-memory computing; oxide semiconductor; polynomial evaluation; charge trapping device
Cite as: Bao L, Zhang H S, Wang Z W, et al. Polynomial geometric transformation based on IGZO charge trapping RAM array for machine vision calibration. Sci China Inf Sci, 2025, 68: 160403, doi: 10.1007/s11432-024-4420-5

新器件 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 4

Logic-in-memory cell enabling binary and ternary Boolean logics
Oh, Jeongyun; Jeon, Juhee; Shin, Yunwoo; Cho, Kyougah; Kim, Sangsig
Sci China Inf Sci, 2025, 68(2): 122407
Keywords: logic-in-memory; reconfigurable channel modes; ternary logic; triple-gated feedback field-effect transistors
Cite as: Oh J, Jeon J, Shin Y, et al. Logic-in-memory cell enabling binary and ternary Boolean logics. Sci China Inf Sci, 2025, 68: 122407, doi: 10.1007/s11432-024-4248-4

新器件 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 4

A monolithic 3D IGZO-RRAM-SRAM-integrated architecture for robust and efficient compute-in-memory enabling equivalent-ideal device metrics
Yan, Shengzhe; Cong, Zhaori; Wang, Zi; Dai, Zhuoyu; Guo, Zeyu; Qian, Zhihang; Li, Xufan; Zheng, Xu; Chen, Chuanke; Lu, Nianduan; Dou, Chunmeng; Yang, Guanhua; Xu, Xiaoxin; Geng, Di; Yue, Jinshan; Wang, Lingfei; Li, Ling; Liu, Ming
Sci China Inf Sci, 2025, 68(2): 122404
Keywords: compute-in-memory; CIM; monolithic 3D; RRAM; IGZO; 3D-stack; simulation
Cite as: Yan S Z, Cong Z R, Wang Z, et al. A monolithic 3D IGZO-RRAM-SRAM-integrated architecture for robust and efficient compute-in-memory enabling equivalent-ideal device metrics. Sci China Inf Sci, 2025, 68: 122404, doi: 10.1007/s11432-024-4078-1

新器件 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 3

Improved synaptic properties of HfSiOx-based ferroelectric memristors by optimizing Ti/N ratio in TiN top electrode for neuromorphic computing
Youn, Chaewon; Kim, Sungjun
Sci China Inf Sci, 2025, 68(10): 202404
Keywords: ferroelectric memristors; optimal DC power; synaptic devices; potentiation and depression; hafnium silicon oxide
Cite as: Youn C, Kim S. Improved synaptic properties of HfSiOx-based ferroelectric memristors by optimizing Ti/N ratio in TiN top electrode for neuromorphic computing. Sci China Inf Sci, 2025, 68: 202404, doi: 10.1007/s11432-025-4483-1

新器件 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 3

Cryptographic characteristics of true random number generators using gated silicon nanosheet diodes
Jeon, Juhee; Shin, Yunwoo; Heo, Hyojoo; Son, Jaemin; Ryu, Seungho; Cho, Kyoungah; Kim, Sangsig
Sci China Inf Sci, 2025, 68(6): 162401
Keywords: true random number generator; gated p+-i-n+ diode; image encryption; secret key; silicon nanosheet
Cite as: Jeon J, Shin Y, Heo H, et al. Cryptographic characteristics of true random number generators using gated silicon nanosheet diodes. Sci China Inf Sci, 2025, 68: 162401, doi: 10.1007/s11432-024-4317-6

新器件 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 3

Ferroelectrically gated two-dimensional bismuth oxyselenides for strain-invariant flexible synaptic thin-film transistors
Wen, Jie; Xiao, Fei; Luo, Zheng-Dong; Tan, Dongxin; Gan, Xuetao; Zhang, Dawei; Chu, Zhufei; Xia, Yinshui; Liu, Yan; Han, Genquan
Sci China Inf Sci, 2025, 68(5): 152401
Keywords: Bi2O2Se; FeFET; nonvolatile memory; flexible device; synaptic transistor
Cite as: Wen J, Xiao F, Luo Z-D, et al. Ferroelectrically gated two-dimensional bismuth oxyselenides for strain-invariant flexible synaptic thin-film transistors. Sci China Inf Sci, 2025, 68: 152401, doi: 10.1007/s11432-024-4304-y

新器件 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 3

3D self-rectifying memristive ternary content addressable memory for massive and exact in-memory search
Yu, Yingjie; Ren, Shengguang; Yang, Ling; Li, Yi; Miao, Xiangshui
Sci China Inf Sci, 2025, 68(3): 139402
Keywords: ternary content addressable memory; three-dimensional; self-rectifying memristor; in-memory search; parallelism
Cite as: Yu Y J, Ren S G, Yang L, et al. 3D self-rectifying memristive ternary content addressable memory for massive and exact in-memory search. Sci China Inf Sci, 2025, 68: 139402, doi: 10.1007/s11432-024-4253-9

新器件 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 3

Optimizing hardware-software co-design based on non-ideality in memristor crossbars for in-memory computing
Jiang, Pinfeng; Song, Danzhe; Huang, Menghua; Yang, Fan; Wang, Letian; Liu, Pan; Miao, Xiangshui; Wang, Xingsheng
Sci China Inf Sci, 2025, 68(2): 122406
Keywords: memristor crossbar; IR-drop; neural network; activation function; hardware-software co-design
Cite as: Jiang P F, Song D Z, Huang M H, et al. Optimizing hardware-software co-design based on non-ideality in memristor crossbars for in-memory computing. Sci China Inf Sci, 2025, 68: 122406, doi: 10.1007/s11432-024-4240-x

Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
新器件 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

A parallel computing-in-memory accelerator utilizing FeRAM array with retention loss correction
Liu, Can; Shen, Zhihao; Mao, Wei; Li, Bo; Lv, Xiaomeng; Li, Fuyi; Xiao, Peng; Hong, Haiqiao; Zhao, Shirui; Zheng, Siying; Li, Xiaoxi; Yu, Xiao; Zhou, Jiuren; Chen, Bing; Liu, Yan; Han, Genquan
Sci China Inf Sci, 2025, 68(6): 160409
Keywords: ferroelectric capacitor; non-ideality; computing-in-memory; 1T1C; parallel; retention loss; FeRAM; array
Cite as: Liu C, Shen Z H, Mao W, et al. A parallel computing-in-memory accelerator utilizing FeRAM array with retention loss correction. Sci China Inf Sci, 2025, 68: 160409, doi: 10.1007/s11432-024-4421-0

Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
新器件 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

Crystal orientation-modulated ferroelectric and dielectric properties in Hf0.5Zr0.5O2 thin films
Li, Yu-Chun; Li, Xiao-Xi; Xu, Zhongshan; Huang, Zi-Ying; Yang, Yingguo; Zhu, Xiao-Na; Li, Ming; Zhang, David Wei; Lu, Hong-Liang
Sci China Inf Sci, 2025, 68(6): 160406
Keywords: ferroelectric; Hf0.5Zr0.5O2; oxygen dose; GIWAXS; orientation; dielectric
Cite as: Li Y-C, Li X-X, Xu Z S, et al. Crystal orientation-modulated ferroelectric and dielectric properties in Hf0.5Zr0.5O2 thin films. Sci China Inf Sci, 2025, 68: 160406, doi: 10.1007/s11432-024-4428-8

Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
新器件 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

Improvement with low operation voltage in ultrathin La-doped Hf0.5Zr0.5O2 ferroelectric capacitors
Zeng, Min; Yan, Shiwei; Liu, Shiyuan; Fu, Tianyue; Liu, Honggang; Hu, Qianlan; Wu, Yanqing
Sci China Inf Sci, 2025, 68(6): 160402
Keywords: atomic layer deposition; hafnium zirconium oxide; HZO; ferroelectric capacitor; endurance; reliability
Cite as: Zeng M, Yan S W, Liu S Y, et al. Improvement with low operation voltage in ultrathin La-doped Hf0.5Zr0.5O2 ferroelectric capacitors. Sci China Inf Sci, 2025, 68: 160402, doi: 10.1007/s11432-024-4412-3

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Al2O3/AlN/GaN MOS-HEMTs on 6-inch silicon substrate with high transconductance and state-of-the-art fmax×LG
Qin, Lingjie; Zhu, Jiejie; Zhang, Bowen; Zhou, Yuxi; Duan, Huantao; Ma, Huimei; Li, Mengdi; Huang, Simei; Rao, Jin; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2025, 68(3): 139403
Keywords: Al2O3/AlN/GaN; regrown ohmic; Si substrate; low-damage remote plasma oxidation pre-treatment; radio-frequency
Cite as: Qin L J, Zhu J J, Zhang B W, et al. Al2O3/AlN/GaN MOS-HEMTs on 6-inch silicon substrate with high transconductance and state-of-the-art fmax×LG. Sci China Inf Sci, 2025, 68: 139403, doi: 10.1007/s11432-024-4268-5

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An AND-type 1T-FeFET array with robust write and read operations
Xu, Jiacheng; Zhao, Jiayi; Zhang, Hongrui; Qian, Haoji; Gu, Jiani; Chen, Bowen; Lin, Gaobo; Shen, Rongzong; Song, Xinda; Liu, Huan; Ding, Yian; Ma, Minglei; Zhang, Miaomiao; Yu, Xiao; Chen, Bing; Cheng, Ran; Xu, Gaobo; Yin, Huaxiang; Liu, Yan; Chen, Jiajia; Jin, Chengji; Han, Genquan
Sci China Inf Sci, 2025, 68(2): 129404
Keywords: HfO2-based Ferroelectric; FeFET; AND-type array; non-volatile memory; transistor
Cite as: Xu J C, Zhao J Y, Zhang H R, et al. An AND-type 1T-FeFET array with robust write and read operations. Sci China Inf Sci, 2025, 68: 129404, doi: 10.1007/s11432-024-4245-7

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Dynamic performance enhancement in Ti/Au ohmic contacts on β-Ga2O3- on-SiC substrates: evidence from pulsed measurements
Liu, Chenyu; Wang, Yibo; Xu, Wenhui; Huang, Shuqi; Yu, Chunxiao; Yang, Zeyu; Jia, Xiaole; Li, Xiaoxi; Li, Bochang; Luo, Zhengdong; Fang, Cizhe; Liu, Yan; You, Tiangui; Ou, Xin; Han, Genquan
Sci China Inf Sci, 2025, 68(1): 119403
Keywords: Ga2O3; Titanium/Gold ohmic contact; heterogeneous; pulsed measurement; Gallium Oxide
Cite as: Liu C Y, Wang Y B, Xu W H, et al. Dynamic performance enhancement in Ti/Au ohmic contacts on β-Ga2O3- on-SiC substrates: evidence from pulsed measurements. Sci China Inf Sci, 2025, 68: 119403, doi: 10.1007/s11432-024-4195-4

新器件 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

Orbitronics for energy-efficient magnetization switching
Yao, Yuxuan; Zhu, Daoqian; Xia, Qingtao; Liang, Jianing; Jiang, Yuhao; Peng, Zhiyang; Li, Jiaxu; Xiao, Chen; Xu, Renyou; Wang, Wenwen; Shang, Xiantao; Lu, Shiyang; Zhu, Dapeng; Liu, Hong-Xi; Cao, Kaihua; Zhao, Weisheng
Sci China Inf Sci, 2025, 68(1): 119402
Keywords: orbitronics; orbital hall effect; spin-orbit torque; current-induced magnetization switching; 400℃ annealing
Cite as: Yao Y X, Zhu D Q, Xia Q T, et al. Orbitronics for energy-efficient magnetization switching. Sci China Inf Sci, 2025, 68: 119402, doi: 10.1007/s11432-024-4186-6

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Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field-effect diode based on AlGaN/GaN HEMT
Wang, Fangzhou; Gao, Changhong; Ding, Guojian; Yu, Cheng; Wang, Zhuocheng; Wang, Xiaohui; Feng, Qi; Yu, Ping; Zuo, Peng; Chen, Wanjun; Wang, Yang; Jia, Haiqiang; Chen, Hong; Zhang, Bo; Wang, Zeheng
Sci China Inf Sci, 2025, 68(1): 112403
Keywords: Schottky-MIS cascode anode; lateral field-effect diode; LFED; ultralow reverse leakage current; ILEAK; forward drop and reverse leakage trade-off; AlGaN/GaN HEMTs
Cite as: Wang F Z, Gao C H, Ding G J, et al. Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field-effect diode based on AlGaN/GaN HEMT. Sci China Inf Sci, 2025, 68: 112403, doi: 10.1007/s11432-024-4197-y

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Over 3 GW/cm2 low leakage vertical β-Ga2O3 Schottky rectifier featuring self-aligned multi-zone junction termination extension
Wan, Jiangbin; Wang, Hengyu; Tao, Tiancheng; Cheng, Haoyuan; Wang, Ce; Zhang, Chi; Sheng, Kuang
Sci China Inf Sci, 2026, 69(2): 129404
Keywords: power semiconductor; ultra-wide bandgap; gallium oxide; junction termination extension; breakdown voltage
Cite as: Wan J B, Wang H Y, Tao T C, et al. Over 3 GW/cm2 low leakage vertical β-Ga2O3 Schottky rectifier featuring self-aligned multi-zone junction termination extension. Sci China Inf Sci, 2026, 69: 129404, doi: 10.1007/s11432-025-4617-1

新器件 LETTER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

Revisiting a classic form of memory-centric computing—lookup table
Dai, Weibang; Chen, Xiaogang; Song, Sannian; Chen, Houpeng; Li, Shunfen; Hong, Tao; Jiao, Zhenhao; Song, Zhitang
Sci China Inf Sci, 2026, 69(1): 119404
Keywords: LUT-based computing; near-memory computing; compute-in-memory; emerging non-volatile memory; memory-centric computing
Cite as: Dai W B, Chen X G, Song S N, et al. Revisiting a classic form of memory-centric computing—lookup table. Sci China Inf Sci, 2026, 69: 119404, doi: 10.1007/s11432-025-4521-4

新器件 REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

Model quantization for computing-in-memory: a survey
Sun, Sifan; Bai, Jinyu; Chen, Hanting; Deng, Kaiwen; Xie, Zhiwei; Li, Jingjing; Cao, Bin; Zhang, He; Kang, Wang; Zhao, Weisheng
Sci China Inf Sci, 2025, 68(11): 211401
Keywords: deep neural network; model quantization; quantized neural network; computing-in-memory; neural network accelerator
Cite as: Sun S F, Bai J Y, Chen H T, et al. Model quantization for computing-in-memory: a survey. Sci China Inf Sci, 2025, 68: 211401, doi: 10.1007/s11432-024-4522-8

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Critical current for field-free switching of the in-plane magnetization in the three-terminal magnetic tunnel junction
Ye, Hongjie; Yan, Zhengjie; Wang, Min; Wang, Zhaohao
Sci China Inf Sci, 2025, 68(10): 209404
Keywords: magnetic tunnel junction; spin-orbit torque; magnetic random-access memory; spin transfer torque; magnetization switching
Cite as: Ye H J, Yan Z J, Wang M, et al. Critical current for field-free switching of the in-plane magnetization in the three-terminal magnetic tunnel junction. Sci China Inf Sci, 2025, 68: 209404, doi: 10.1007/s11432-025-4455-2

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Doping and minority carrier lifetime uniformity of 4H-SiC homoepitaxial layers: role of C/Si ratio distribution
Liu, Wenji; Tong, Zhouyu; Zhang, Cong; Han, Xuefeng; Wang, Rong; Yang, Deren; Pi, Xiaodong
Sci China Inf Sci, 2025, 68(10): 209401
Keywords: 4H-SiC; homoepitaxy; C/Si ratio; doping uniformity; minority carrier lifetime
Cite as: Liu W J, Tong Z Y, Zhang C, et al. Doping and minority carrier lifetime uniformity of 4H-SiC homoepitaxial layers: role of C/Si ratio distribution. Sci China Inf Sci, 2025, 68: 209401, doi: 10.1007/s11432-024-4385-5

Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
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Scaled 3D-stacked 2T0C DRAM based on indium-tin-oxide transistors with long data retention and fast write speed of 10 ns
Zhu, Shenwu; Hu, Qianlan; Gu, Chengru; Yan, Shiwei; Qiu, Aocheng; Wu, Yanqing
Sci China Inf Sci, 2025, 68(6): 160410
Keywords: 2T0C DRAM; ITO transistors; 3D-stacked; write speed; data retention
Cite as: Zhu S W, Hu Q L, Gu C R, et al. Scaled 3D-stacked 2T0C DRAM based on indium-tin-oxide transistors with long data retention and fast write speed of 10 ns. Sci China Inf Sci, 2025, 68: 160410, doi: 10.1007/s11432-024-4413-2

Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
新器件 PERSPECTIVE Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

Prospects and challenges of HfO2-based ferroelectric devices
Takagi, Shinichi; Takenaka, Mitsuru; Toprasertpong, Kasidit
Sci China Inf Sci, 2025, 68(6): 160407
Keywords: ferroelectric device; FeFET; FeRAM; HfO2; reservoir computing
Cite as: Takagi S, Takenaka M, Toprasertpong K. Prospects and challenges of HfO2-based ferroelectric devices. Sci China Inf Sci, 2025, 68: 160407, doi: 10.1007/s11432-025-4372-4

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Analysis and fabrication of a SiC super-junction termination structure in a state of charge imbalance
Kang, Haobo; Du, Fengyu; Yuan, Hao; Bai, Boyi; Zhou, Yu; Li, Jingyu; Han, Chao; Tang, Xiaoyan; Song, Qingwen; Zhang, Yuming
Sci China Inf Sci, 2025, 68(4): 149404
Keywords: silicon carbide; super-junction; charge-imbalance; termination structure; schottky diode
Cite as: Kang H B, Du F Y, Yuan H, et al. Analysis and fabrication of a SiC super-junction termination structure in a state of charge imbalance. Sci China Inf Sci, 2025, 68: 149404, doi: 10.1007/s11432-024-4318-6

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24.4 THz·V fT×BV figure-of-merit AlN/GaN/AlN MISHEMTs with thin AlN buffer layer
Zhang, Chaoqun; Zhou, Hong; Alghamdi, Sami; Zhang, Kun; Liu, Zhihong; Hao, Yue; Zhang, Jingcheng
Sci China Inf Sci, 2025, 68(3): 139401
Keywords: AlN/GaN; MISHEMT; thin AlN buffer; fT×BV; Johnson figure-of-merit
Cite as: Zhang C Q, Zhou H, Alghamdi S, et al. 24.4 THz·V fT×BV figure-of-merit AlN/GaN/AlN MISHEMTs with thin AlN buffer layer. Sci China Inf Sci, 2025, 68: 139401, doi: 10.1007/s11432-024-4255-5

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Substrate bias effects in p-channel GaN-on-Si transistors
Zhao, Mengyao; Ma, Jie; Yang, Lanlan; Pan, Chuanqi; Wang, Denggui; Zhou, Jianjun; Li, Sheng; Wei, Jiaxing; Zhang, Long; Liu, Siyang; Sun, Weifeng
Sci China Inf Sci, 2025, 68(1): 119405
Keywords: buffer traps; GaN-on-Si transistor; p-channel; space charge; substrate bias effects; vertical electric field; back gate
Cite as: Zhao M Y, Ma J, Yang L L, et al. Substrate bias effects in p-channel GaN-on-Si transistors. Sci China Inf Sci, 2025, 68: 119405, doi: 10.1007/s11432-024-4213-4

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Physics based circuit compatible model for hybrid antiferroelectric random access memory
Wu, Qiuxia; Peng, Yue; Xiao, Wenwu; Ma, Wenxuan; Zhang, Shuo; Sun, Litao; Zhang, Chunfu; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2025, 68(1): 119401
Keywords: antiferroelectric; AFRAM; EDA; compute-in-memory; non-volatile
Cite as: Wu Q X, Peng Y, Xiao W W, et al. Physics based circuit compatible model for hybrid antiferroelectric random access memory. Sci China Inf Sci, 2025, 68: 119401, doi: 10.1007/s11432-024-4190-4

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Nonlinearity modulation of auto-oscillations in three-terminal magnetic tunnel junctions
Wang Z X, Cai W L, Du A, et al
Sci China Inf Sci, 2026, 69(10): 209401
Keywords: spintronics; spin torque nano-oscillator; magnetic tunnel junction; nonlinear auto-oscillator theory; spin orbit torque
Cite as: Wang Z X, Cai W L, Du A, et al. Nonlinearity modulation of auto-oscillations in three-terminal magnetic tunnel junctions. Sci China Inf Sci, 2026, 69: 209401, doi: 10.1007/s11432-025-4877-0

新器件 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Nitrogen-vacancy-driven degradation mechanism in ferroelectric wurtzite AlScN
Wang, Ruiqing; Zhou, Jiuren; Yuan, Xihui; Zhu, Feng; Zheng, Siying; Sun, Wenxin; Wang, Xinghui; Xu, Haiwen; Li, Bochang; Liu, Yan; Han, Genquan
Sci China Inf Sci, 2026, 69(9): 199401
Keywords: wurtzite ferroelectrics; AlScN; Nitrogen vacancy; reliability; endurance
Cite as: Wang R Q, Zhou J R, Yuan X H, et al. Nitrogen-vacancy-driven degradation mechanism in ferroelectric wurtzite AlScN. Sci China Inf Sci, 2026, 69: 199401, doi: 10.1007/s11432-025-4795-1

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A 64-bit high-precision flash computing-in-memory architecture with a parallel input scheme
Feng Y, Guo X Y, Chen C, et al
Sci China Inf Sci, 2026, 69(9): 192401
Keywords: computing-in-memory; general-purpose computing; precision extension; flash memory
Cite as: Feng Y, Guo X Y, Chen C, et al. A 64-bit high-precision flash computing-in-memory architecture with a parallel input scheme. Sci China Inf Sci, 2026, 69: 192401, doi: 10.1007/s11432-025-4826-6

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E-mode reverse p-i-n junction gate GaN HEMT with high VTH and enhanced gate drive voltage
Jia, Mao; Hou, Bin; Yang, Ling; Xue, Zhiqiang; Zhang, Meng; Wu, Mei; Lu, Hao; Hong, Xitong; Xiao, Qian; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2026, 69(8): 189404
Keywords: normally-off; AlGaN/GaN HEMT; threshold voltage modulation; time-dependent gate breakdown; high gate operation voltage
Cite as: Jia M, Hou B, Yang L, et al. E-mode reverse p-i-n junction gate GaN HEMT with high VTH and enhanced gate drive voltage. Sci China Inf Sci, 2026, 69: 189404, doi: 10.1007/s11432-025-4679-4

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Dynamic switching and oxygen ion transport in (Hf+Zr)O2-x ferroelectrics modulated by Al2O3-x interfaces
Feng, Ze; Liu, Huan; Pan, Weiwen; Zhang, Boyuan; Liu, Ao; Zheng, Xu; Shan, Yiyang; Zhao, Xiang; Huang, Rong; Wang, Weihua; Cheng, Yahui; Lu, Feng; Cui, Yi; Dingsun, An; Han, Genquan; Liu, Hui; Dong, Hong
Sci China Inf Sci, 2026, 69(8): 189403
Keywords: hafnium zirconium oxide; ferroelectric; dynamic switching; oxygen vacancy; transport mechanism
Cite as: Feng Z, Liu H, Pan W W, et al. Dynamic switching and oxygen ion transport in (Hf+Zr)O2-x ferroelectrics modulated by Al2O3-x interfaces. Sci China Inf Sci, 2026, 69: 189403, doi: 10.1007/s11432-025-4697-y

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1.4 kV β-Ga2O3 VDMOSFET with high-temperature nitrogen-implanted current blocking layer
Lu, Xing; Hu, Yunjian; Li, Jiajun; Lai, Yuru; Liao, Zhengyi; Zeng, Chunhong; Zhang, Xiaodong; Ng, Kar Wei; Wong, Man Hoi; Chen, Zimin; Pei, Yanli; Wang, Gang
Sci China Inf Sci, 2026, 69(8): 189402
Keywords: β-Ga2O3;VDMOSFET; high-temperature ion implantation; enhancement mode; power device
Cite as: Lu X, Hu Y J, Li J J, et al. 1.4 kV β-Ga2O3 VDMOSFET with high-temperature nitrogen-implanted current blocking layer. Sci China Inf Sci, 2026, 69: 189402, doi: 10.1007/s11432-025-4717-9

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A time scaling theory for multi-layer electronic systems
He, Tingbo
Sci China Inf Sci, 2026, 69(8): 183401
Keywords: \tau scaling; LogicFolding; gear ratio; wafer-to-wafer hybrid bonding; Unified Bus; Hi-ONE
Cite as: He T B. A time scaling theory for multi-layer electronic systems. Sci China Inf Sci, 2026, 69: 183401, doi: 10.1007/s11432-026-5028-5

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VGSOT-BNN: an energy-efficient VGSOT-MRAM-based in-memory computing macro with offset-tolerant sensing for binary neural networks
Wang, Chao; Gao, Qihang; Tong, Zhongzhen; Guo, Xianzeng; Qiu, Yulong; Wang, Zhaohao; Zhao, Weisheng
Sci China Inf Sci, 2026, 69(7): 179402
Keywords: in-memory computing; voltage-gated spin-orbit torque magnetic random access memory; binary neural network; magnetic tunnel junction; low power
Cite as: Wang C, Gao Q H, Tong Z Z, et al. VGSOT-BNN: an energy-efficient VGSOT-MRAM-based in-memory computing macro with offset-tolerant sensing for binary neural networks. Sci China Inf Sci, 2026, 69: 179402, doi: 10.1007/s11432-025-4707-8

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Scattering-suppression induced two-dimensional hole gas mobility enhancement in GaN p-FETs with a multiperiod scattering-modulated barrier layer
Liu, Xu; Xu, Shengrui; Tao, Hongchang; Su, Huake; Zhang, Tao; Xie, Lei; Wang, Xinhao; Gao, Yuan; Zhang, Jincheng; Hao, Yue
Sci China Inf Sci, 2026, 69(7): 179401
Keywords: p-channel FET; 2DHG; mobility; scattering; GaN
Cite as: Liu X, Xu S R, Tao H C, et al. Scattering-suppression induced two-dimensional hole gas mobility enhancement in GaN p-FETs with a multiperiod scattering-modulated barrier layer. Sci China Inf Sci, 2026, 69: 179401, doi: 10.1007/s11432-025-4582-7

Special Topic: Advanced Optoelectronics Based on Two-Dimensional Materials
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Mechanism of photocarrier transport in vacuum ultraviolet photodetector based on hexagonal boron nitride nanosheets
Fang, Wannian; Li, Qiang; Chen, Ransheng; Chen, Youwei; Li, Jiaxing; Liu, Haifeng; Lin, Ziyan; Ning, Jing; Hao, Yue
Sci China Inf Sci, 2026, 69(7): 170405
Keywords: hexagonal boron nitride; self-assembly; vacuum ultraviolet photodetector; first-principles calculations; photocarrier transport
Cite as: Fang W N, Li Q, Chen R S, et al. Mechanism of photocarrier transport in vacuum ultraviolet photodetector based on hexagonal boron nitride nanosheets. Sci China Inf Sci, 2026, 69: 170405, doi: 10.1007/s11432-026-4966-8

Special Topic: Advanced Optoelectronics Based on Two-Dimensional Materials
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Asymmetric WSe2 reconfigurable devices for logic-in-memory computing: contact barrier engineering and floating gate-controlled operation
Liu, Wancai; Shen, Xue; Guo, Jiazhou; Ma, Wenxuan; Luo, Yisen; Hao, Yue; Ning, Jing; Zhang, Jincheng
Sci China Inf Sci, 2026, 69(7): 170404
Keywords: reconfigurable transistor; logic-in-memory; floating gate; asymmetric; contact barrier engineering
Cite as: Liu W C, Shen X, GUO J Z, et al. Asymmetric WSe2 reconfigurable devices for logic-in-memory computing: contact barrier engineering and floating gate-controlled operation. Sci China Inf Sci, 2026, 69: 170404, doi: 10.1007/s11432-025-4954-6

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Thermal analysis and management for RRAM-based computing-in-memory chips
Ma, Awang; Gao, Bin; Yu, Ruihua; Zhang, Qingtian; Yao, Peng; Tang, Jianshi; Qian, He; Wu, Huaqiang
Sci China Inf Sci, 2026, 69(6): 162404
Keywords: RRAM-based CIM chips; thermal analysis; static thermal management; latency-thermal co-optimization; dynamic thermal management
Cite as: Ma A W, Gao B, Yu R H, et al. Thermal analysis and management for RRAM-based computing-in-memory chips. Sci China Inf Sci, 2026, 69: 162404, doi: 10.1007/s11432-025-4708-9

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High threshold voltage and enhanced threshold voltage stability of Schottky p-GaN gate HEMT by p-GaN bridge engineering
Zhang, Kuo; Liu, Kai; He, Yunlong; Wang, Chong; Zhang, Wentao; Zheng, Xuefeng; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2026, 69(5): 159402
Keywords: Schottky p-GaN gate HEMTs; threshold voltage; p-GaN bridge; charge storage; drain/gate bias stress; threshold voltage stability
Cite as: Zhang K, Liu K, He Y L, et al. High threshold voltage and enhanced threshold voltage stability of Schottky p-GaN gate HEMT by p-GaN bridge engineering. Sci China Inf Sci, 2026, 69: 159402, doi: 10.1007/s11432-025-4616-7

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High power density X-band source-connected field plate-free AlGaN/GaN HEMT with recessed gate oxidation process
Lu, Hao; Ma, Xiaohua; Deng, Longge; Yang, Ling; Hou, Bin; Zhang, Meng; Wu, Mei; Hao, Yue
Sci China Inf Sci, 2026, 69(3): 139401
Keywords: AlGaN/GaN; HEMT; load-pull; power amplifier; recessed gate processing
Cite as: Lu H, Ma X H, Deng L G, et al. High power density X-band source-connected field plate-free AlGaN/GaN HEMT with recessed gate oxidation process. Sci China Inf Sci, 2026, 69: 139401, doi: 10.1007/s11432-025-4494-2

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Quaternary true random number generator comprising gated p+–i–n+ diodes
Heo, Hyojoo; Shin, Yunwoo; Jeon, Juhee; Park, Taeho; Ryu, Seungho; Cho, Kyoungah; Kim, Sangsig
Sci China Inf Sci, 2026, 69(3): 132404
Keywords: quaternary true random number generator; gated p+–i–n+ diode; quaternary secret key; image encryption; data density
Cite as: Heo H, Shin Y, Jeon J, et al. Quaternary true random number generator comprising gated p+–i–n+ diodes. Sci China Inf Sci, 2026, 69: 132404, doi: 10.1007/s11432-025-4626-6

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High ON/OFF and high FoM of fmax×BV×Lg InAlN/GaN HEMTs by using polycrystalline-AlN cap
Li, Shiming; Lu, Hao; Yang, Ling; Wu, Mei; Hou, Bin; Zhang, Meng; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2026, 69(3): 132403
Keywords: InAlN/GaN; high-electron-mobility transistors; cap layer; breakdown voltage; radio frequency
Cite as: Li S M, Lu H, Yang L, et al. High ON/OFF and high FoM of fmax×BV×Lg InAlN/GaN HEMTs by using polycrystalline-AlN cap. Sci China Inf Sci, 2026, 69: 132403, doi: 10.1007/s11432-025-4572-5

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High-performance true random number generator based on SOT-MTJ spin relaxation
Yin, Jialiang; Zhang, Xiuye; Zhang, Boyan; Zhang, Bolin; Cai, Wenlong; Du, Ao; Tang, Binchao; Zhang, Haowei; Bao, Shijian; Li, Chunyi; Zhu, Daoqian; Shi, Kewen; Liu, Hongxi; Zeng, Lang; Zhang, He; Cao, Kaihua; Zhao, Weisheng
Sci China Inf Sci, 2026, 69(2): 129403
Keywords: spin-orbit torque; SOT; magnetic tunnel junction; MTJ; true random number generator; TRNG; relaxation time; security primitive
Cite as: Yin J L, Zhang X Y, Zhang B Y, et al. High-performance true random number generator based on SOT-MTJ spin relaxation. Sci China Inf Sci, 2026, 69: 129403, doi: 10.1007/s11432-025-4595-5

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Coordinated B diffusion Gaussian distribution AlGaN/GaN HEMT device by quasi-van der Waals epitaxy
Zhang, Yaning; Wu, Haidi; Zhang, Haoran; Li, Shiyu; Ji, Xinchen; Yang, Zhichun; Zhang, Xinbo; Bai, Ling; Zheng, Juncheng; Wang, Dong; Hao, Yue; Ning, Jing; Zhang, Jincheng
Sci China Inf Sci, 2026, 69(2): 129402
Keywords: h-BN; coordinated B diffusion; AlGaN HEMT; GaN HEMT; quasi-van der Waals epitaxy; ION/IOFF ratio
Cite as: Zhang Y N, Wu H D, Zhang H R, et al. Coordinated B diffusion Gaussian distribution AlGaN/GaN HEMT device by quasi-van der Waals epitaxy. Sci China Inf Sci, 2026, 69: 129402, doi: 10.1007/s11432-025-4482-1

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Physical structure-based small signal modeling for GaN Fin-HEMTs
Zhao, Ziyue; Lu, Yang; Yi, Chupeng; Feng, Ting; Liu, Xin; Zhao, Wei; Yao, Guanghai; Chen, Yilin; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2026, 69(2): 129401
Keywords: Fin-HEMT; small signal model; GaN; physical structure-based; parameter
Cite as: Zhao Z Y, Lu Y, Yi C P, et al. Physical structure-based small signal modeling for GaN Fin-HEMTs. Sci China Inf Sci, 2026, 69: 129401, doi: 10.1007/s11432-025-4514-x

新器件 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Universal content-addressable memory with high-endurance flash for functionally complete logic-in-memory computing
Guo, Xinyi; Feng, Yang; Guo, Peng; Yang, Shaoqi; Zhao, Xiaohuan; Yang, Guangkuo; Wu, Jixuan; Zhan, Xuepeng; Chen, Jiezhi
Sci China Inf Sci, 2026, 69(2): 122403
Keywords: reconfigurable; multifunctional; universal content addressable memory; boolean logic; in-memory computing
Cite as: Guo X Y, Feng Y, Guo P, et al. Universal content-addressable memory with high-endurance flash for functionally complete logic-in-memory computing. Sci China Inf Sci, 2026, 69: 122403, doi: 10.1007/s11432-025-4507-0

新器件 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

High linearity and high-power of composite component graded-AlGaN/graded-InGaN/GaN HEMTs
Yu, Qian; Yang, Ling; Zhang, Long; Shi, Chunzhou; Hou, Bin; Wu, Mei; Zhang, Meng; Lu, Hao; Zou, Xu; Gao, Wenze; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2026, 69(2): 122402
Keywords: GaN; AlGa; AlGa HEMTs; GaN HEMTs; graded-AlGaN; graded-InGaN; high linearity
Cite as: Yu Q, Yang L, Zhang L, et al. High linearity and high-power of composite component graded-AlGaN/graded-InGaN/GaN HEMTs. Sci China Inf Sci, 2026, 69: 122402, doi: 10.1007/s11432-025-4527-1

新器件 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

32 x 32 β-Ga2O3 MOS solar-blind ultraviolet detector array and its properties
Chen, Haifeng; Wu, Chenlu; Liu, Xuyang; Chen, Chunling; Wang, Huorong; Lu, Qin; Liu, Xiangtai; Ni, Jinyu; Wang, Zhan; Wang, Shaoqing
Sci China Inf Sci, 2026, 69(1): 119403
Keywords: Ga2O3; solar-blind ultraviolet; MOSFET; photodetector array; gate-controlled reset
Cite as: Chen H F, Wu C L, Liu X Y, et al. 32 x 32 β-Ga2O3 MOS solar-blind ultraviolet detector array and its properties. Sci China Inf Sci, 2026, 69: 119403, doi: 10.1007/s11432-025-4506-1

新器件 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

A 1-10 GHz frequency-agile high-power GaN linear photoconductive semiconductor switch
Wang, Xu; Lu, Xiaoli; Wang, Ye; Yang, Ruiqi; Chen, Xiangjin; Liu, Jingliang; He, Yunlong; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2026, 69(1): 119402
Keywords: frequency-agile RF device; linearly modulated PCSS; GaN microwave photonics; high power RF device; X-band
Cite as: Wang X, Lu X L, Wang Y, et al. A 1-10 GHz frequency-agile high-power GaN linear photoconductive semiconductor switch. Sci China Inf Sci, 2026, 69: 119402, doi: 10.1007/s11432-025-4499-6

新器件 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Variation-aware optimization of salicide-enhanced tunnel FET technology based on 300 mm foundry platform
Wang, Kaifeng; Li, Yiqing; Ren, Ye; Wu, Yongqin; Bu, Weihai; Huang, Qianqian; Huang, Ru
Sci China Inf Sci, 2026, 69(1): 119401
Keywords: tunnel FET; variability; ion implantation; CMOS; silicide
Cite as: Wang K F, Li Y Q, Ren Y, et al. Variation-aware optimization of salicide-enhanced tunnel FET technology based on 300 mm foundry platform. Sci China Inf Sci, 2026, 69: 119401, doi: 10.1007/s11432-025-4495-3

新器件 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

First demonstration of heterogeneous integrated limiter chip with breakdown-enhanced GaN SBDs
Zhang, Jincheng; Huo, Shudong; Zhang, Zhengxing; Xiang, Mengjiao; Zheng, Menghan; Liu, Shen; Zhang, Yachao; Song, Xiufeng; Zhou, Hong; Dang, Kui; Ning, Jing; Hao, Yue
Sci China Inf Sci, 2026, 69(1): 112403
Keywords: gallium nitride; GaN; Schottky barrier diode; SBD; limiter; heterogeneous integrate
Cite as: Zhang J C, Huo S D, Zhang Z X, et al. First demonstration of heterogeneous integrated limiter chip with breakdown-enhanced GaN SBDs. Sci China Inf Sci, 2026, 69: 112403, doi: 10.1007/s11432-025-4681-1

新器件 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Bifunctional monolithic transparent device for both neuromorphic computing and omnidirectional self-driven photodetection
Chang, Yanyan; Jiang, Min; Ji, Lian; Zhao, Yukun
Sci China Inf Sci, 2025, 68(10): 202403
Keywords: bifunctional monolithic device; 360◦ omnidirectional photodetector; self-driven photodetection; artificial synapse; (In,Ga)N nanowire; neural network
Cite as: Chang Y Y, Jiang M, Ji L, et al. Bifunctional monolithic transparent device for both neuromorphic computing and omnidirectional self-driven photodetection. Sci China Inf Sci, 2025, 68: 202403, doi: 10.1007/s11432-024-4360-9

新器件 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

High-performance SiN/AlGaN/GaN MIS-HEMTs on Si substrate with LPCVD-SiN passivation and n+-InGaN ohmic contacts
Li, Mengdi; Zhu, Jiejie; Zhang, Sheng; Zhang, Bowen; Zhou, Yuxi; Yuan, Dayan; Qin, Lingjie; Zhang, Mingchen; Chang, Qingyuan; Yi, Chupeng; Wei, Ke; Liu, Xinyu; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2025, 68(10): 202402
Keywords: GaN metal-insulator-semiconductor high electron mobility transistors; MIS-HEMTs; low pressure chemical vapor deposition SiN; regrown ohmic; Si substrate; low-voltage RF applications
Cite as: Li M D, Zhu J J, Zhang S, et al. High-performance SiN/AlGaN/GaN MIS-HEMTs on Si substrate with LPCVD-SiN passivation and n+-InGaN ohmic contacts. Sci China Inf Sci, 2025, 68: 202402, doi: 10.1007/s11432-024-4460-y

新器件 REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Expansion of the memory pyramid in the era of large models: compute-intensive compute-in-memory and memory-intensive compute-in-memory
Liu, Zhichao; Zhang, Yanqi; Zhang, Zhican; Yang, Yi; Zhang, Zhaoyang; Wang, Xing; Chen, Jinwu; Li, Xiaomin; Si, Xin; Yang, Jun
Sci China Inf Sci, 2025, 68(10): 201401
Keywords: compute-in-memory; artificial intelligence; memory pyramid; compute-intensive; memory-intensive
Cite as: Liu Z C, Zhang Y Q, Zhang Z C, et al. Expansion of the memory pyramid in the era of large models: compute-intensive compute-in-memory and memory-intensive compute-in-memory. Sci China Inf Sci, 2025, 68: 201401, doi: 10.1007/s11432-024-4354-y

新器件 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

3-bit memory operation of capacitor-less one-transistor one-diode DRAM cell
Ryu, Seungho; Cho, Kyoungah; Kim, Sangsig
Sci China Inf Sci, 2025, 68(9): 199401
Keywords: amorphous indium-tin-gallium-zinc-oxide; thin-film transistor; gated silicon diode; capacitor-less DRAM; multibit memory
Cite as: Ryu S, Cho K, Kim S. 3-bit memory operation of capacitor-less one-transistor one-diode DRAM cell. Sci China Inf Sci, 2025, 68: 199401, doi: 10.1007/s11432-025-4389-y

Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
新器件 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Temperature-dependent wakeup behavior in back-end-of-line compatible ultra-thin HfxZr1−xO2 ferroelectric film
Li, Xiaopeng; Tai, Lu; Dou, Xiaoyu; Feng, Yang; Zhang, Dong; Zhan, Xuepeng; Wu, Jixuan; Gong, Xiao; Chen, Jiezhi
Sci China Inf Sci, 2025, 68(6): 160408
Keywords: ferroelectric; HZO; wakeup behavior; BEOL compatibility; ultra-thin film
Cite as: Li X P, Tai L, Dou X Y, et al. Temperature-dependent wakeup behavior in back-end-of-line compatible ultra-thin HfxZr1−xO2 ferroelectric film. Sci China Inf Sci, 2025, 68: 160408, doi: 10.1007/s11432-024-4407-x

Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
新器件 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Co-optimization of ferroelectric gate stacks on operation voltage and memory window for next-generation NAND flash
Chen, Bo; Liu, Yizhi; Wu, Yifan; Sang, Pengpeng; Wu, Jixuan; Zhan, Xuepeng; Chen, Jiezhi
Sci China Inf Sci, 2025, 68(6): 160404
Keywords: TiO2; gate stack; HZO; memory window
Cite as: Chen B, Liu Y Z, Wu Y F, et al. Co-optimization of ferroelectric gate stacks on operation voltage and memory window for next-generation NAND flash. Sci China Inf Sci, 2025, 68: 160404, doi: 10.1007/s11432-024-4406-y

新器件 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

High linearity GaN HEMT by optimized three-dimensional-gated modulation via top-MIS-gate nanowire channel structure
Gong, Can; Mi, Minhan; Zhou, Yuwei; Wang, Pengfei; Li, Hanzhen; Wen, Xinyi; Meng, Ting; An, Sirui; Du, Xiang; Cheng, Kai; Zhang, Meng; Zhu, Qing; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2025, 68(4): 149401
Keywords: GaN HEMT; top-MIS-gate nanowire channel; stress-engineered in-situ SiN; linearity enhancement; gate-voltage-swing
Cite as: Gong C, Mi M H, Zhou Y W, et al. High linearity GaN HEMT by optimized three-dimensional-gated modulation via top-MIS-gate nanowire channel structure. Sci China Inf Sci, 2025, 68: 149401, doi: 10.1007/s11432-024-4302-0

新器件 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Electro-optic tuning in ferroelectric capacitor with photonic crystal nanobeam cavity
Wang, Tongtong; Zhang, Yong; Yao, Danyang; Jiang, Zhi; Tan, Dongxin; Wen, Jie; Yang, Qiyu; Gan, Xuetao; Liu, Yan; Hao, Yue; Han, Genquan
Sci China Inf Sci, 2025, 68(2): 129403
Keywords: Silicon photonics; electro-optic tuning; photonic crystal nanobeam cavities; ferroelectric capacitor; energy efficient
Cite as: Wang T T, Zhang Y, Yao D Y, et al. Electro-optic tuning in ferroelectric capacitor with photonic crystal nanobeam cavity. Sci China Inf Sci, 2025, 68: 129403, doi: 10.1007/s11432-024-4249-2

量子(37)

Special Topic: Quantum Information
量子 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 26

Topology-driven quantum architecture search framework
Su, Junjian; Fan, Jiacheng; Wu, Shengyao; Li, Guanghui; Qin, Sujuan; Gao, Fei
Sci China Inf Sci, 2025, 68(8): 180507
Keywords: quantum machine learning; variational quantum algorithm; quantum variational circuits; quantum architecture search; search space decoupling
Cite as: Su J J, Fan J C, Wu S Y, et al. Topology-driven quantum architecture search framework. Sci China Inf Sci, 2025, 68: 180507, doi: 10.1007/s11432-024-4486-x

Special Topic: Quantum Information
量子 REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 8

Advances in continuous variable measurement-device-independent quantum key distribution
Wang, Pu; Tian, Yan; Li, Yongmin
Sci China Inf Sci, 2025, 68(8): 180501
Keywords: quantum key distribution; continuous variable; measurement-device-independent; quantum conferencing; quantum communication
Cite as: Wang P, Tian Y, Li Y M. Advances in continuous variable measurement-device-independent quantum key distribution. Sci China Inf Sci, 2025, 68: 180501, doi: 10.1007/s11432-024-4491-9

量子 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 8

Multi-party quantum private comparison of size relationship based on one-direction quantum walks on a circle
Wang, Jintao; Lian, Jiangyuan; Ye, Tianyu
Sci China Inf Sci, 2025, 68(2): 129502
Keywords: multi-party quantum private comparison; size relationship; one-direction quantum walks on a circle; participant attack; quantum circuits
Cite as: Wang J T, Lian J Y, Ye T Y. Multi-party quantum private comparison of size relationship based on one-direction quantum walks on a circle. Sci China Inf Sci, 2025, 68: 129502, doi: 10.1007/s11432-024-4188-6

量子 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 7

Highly reliable quantum secure direct communication based on concatenated GKP-QLDPC codes
Wang, Lei; Chai, Geng; Cao, Zhengwen; Chen, Xinlei
Sci China Inf Sci, 2026, 69(7): 179403
Keywords: quantum secure direct communication; quantum error correction; Gottesman-Kitaev-Preskill state; quantum low-density parity-check codes; continuous variable
Cite as: Wang L, Chai G, Cao Z W, et al. Highly reliable quantum secure direct communication based on concatenated GKP-QLDPC codes. Sci China Inf Sci, 2026, 69: 179403, doi: 10.1007/s11432-025-4608-6

量子 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 7

Quantum attack on RSA by D-Wave Advantage: a first break of 80-bit RSA
Hong, Chunlei; Pei, Zhi; Wang, Qidi; Yang, Shuxiao; Yu, Jingjing; Wang, Chao
Sci China Inf Sci, 2025, 68(2): 129501
Keywords: RSA; closest vector problem; quantum annealing; D-wave advantage; Babai algorithm
Cite as: Hong C L, Pei Z, Wang Q D, et al. Quantum attack on RSA by D-Wave Advantage: a first break of 80-bit RSA. Sci China Inf Sci, 2025, 68: 129501, doi: 10.1007/s11432-024-4163-6

Special Topic: Quantum Information
量子 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 5

Towards the ultimate limits of quantum channel discrimination and quantum communication
Fang, Kun; Gour, Gilad; Wang, Xin
Sci China Inf Sci, 2025, 68(8): 180509
Keywords: quantum information; quantum channel discrimination; quantum communication; quantum capacity; quantum hypothesis testing; quantum divergence
Cite as: Fang K, Gour G, Wang X. Towards the ultimate limits of quantum channel discrimination and quantum communication. Sci China Inf Sci, 2025, 68: 180509, doi: 10.1007/s11432-024-4488-0

Special Topic: Quantum Information
量子 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 5

Quantum-enhanced blockchain federated learning via quantum Byzantine agreement
Liu, Hao-Wen; Liu, Zhi-Ping; Yin, Hua-Lei; Chen, Zeng-Bing
Sci China Inf Sci, 2025, 68(8): 180503
Keywords: federated learning; tensor network; quantum Byzantine agreement; differential privacy; blockchain
Cite as: Liu H-W, Liu Z-P, Yin H-L, et al. Quantum-enhanced blockchain federated learning via quantum Byzantine agreement. Sci China Inf Sci, 2025, 68: 180503, doi: 10.1007/s11432-025-4471-7

量子 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 3

AI-generated image detection algorithm based on classical-quantum hybrid neural network
Xu, Juncong; Fang, Han; Yang, Yang; Chen, Kejiang; Chen, Zhaoyun; Dou, Menghan; Qu, Lei; Zhang, Weiming; Guo, Guoping
Sci China Inf Sci, 2026, 69(1): 112501
Keywords: AI-generated image detection; quantum neural network; quantum computing; generative adversarial network
Cite as: Xu J C, Fang H, Yang Y, et al. AI-generated image detection algorithm based on classical-quantum hybrid neural network. Sci China Inf Sci, 2026, 69: 112501, doi: 10.1007/s11432-024-4475-4

Special Topic: Quantum Information
量子 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 3

Effective rate-adaptive reconciliation for CV-QKD using QC-MET-LDPC codes
Zhang, Kun; Hou, Jia; Jiang, Xue-Qin; Dai, Jisheng; Huang, Peng; Zeng, Guihua
Sci China Inf Sci, 2025, 68(8): 180510
Keywords: continuous-variable quantum key distribution; information reconciliation; multi-edge type low-density parity-check codes; quasi-cyclic low-density parity-check codes; rate-adaptive
Cite as: Zhang K, Hou J, Jiang X-Q, et al. Effective rate-adaptive reconciliation for CV-QKD using QC-MET-LDPC codes. Sci China Inf Sci, 2025, 68: 180510, doi: 10.1007/s11432-024-4480-x

Special Topic: Quantum Information
量子 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 3

Third-order exceptional surface in a pseudo-Hermitian superconducting circuit
Zhang, Guoqiang; Lin, Siyan; Feng, Wei; Wang, Yu; Yu, Yang; Yang, Chuiping
Sci China Inf Sci, 2025, 68(8): 180508
Keywords: superconducting circuit; exceptional surface; PT symmetry; pseudo-Hermiticity
Cite as: Zhang G Q, Lin S Y, Feng W, et al. Third-order exceptional surface in a pseudo-Hermitian superconducting circuit. Sci China Inf Sci, 2025, 68: 180508, doi: 10.1007/s11432-025-4470-4

量子 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

Fully passive reference-frame-independent quantum key distribution with finite-key security analysis
Ying, Jia-Wei; Gu, Shi-Pu; Wang, Xing-Fu; Zhou, Lan; Sheng, Yu-Bo
Sci China Inf Sci, 2026, 69(8): 182501
Keywords: fully passive; reference-frame-independent; quantum key distribution; quantum communication; finite-key
Cite as: Ying J-W, Gu S-P, Wang X-F, et al. Fully passive reference-frame-independent quantum key distribution with finite-key security analysis. Sci China Inf Sci, 2026, 69: 182501, doi: 10.1007/s11432-025-4759-x

量子 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

Reverse-encoded quantum key distribution with Gaussian-modulated coherent states
Guo, Mingxuan; Huang, Peng; Wang, Tao; Zeng, Guihua
Sci China Inf Sci, 2026, 69(6): 162503
Keywords: quantum key distribution; Gaussian modulation; coherent state
Cite as: Guo M X, Huang P, Wang T, et al. Reverse-encoded quantum key distribution with Gaussian-modulated coherent states. Sci China Inf Sci, 2026, 69: 162503, doi: 10.1007/s11432-025-4575-5

量子 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

Bipartite entanglement measures and entanglement constraints
Li, Hui; Gao, Ting; Yan, Fengli
Sci China Inf Sci, 2025, 68(12): 229501
Keywords: entanglement measure; monogamy relation; polygamy relation; multiparty quantum system; quantum state
Cite as: Li H, Gao T, Yan F L. Bipartite entanglement measures and entanglement constraints. Sci China Inf Sci, 2025, 68: 229501, doi: 10.1007/s11432-025-4579-1

Special Topic: Quantum Information
量子 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

Bridging quantum elementary links with spectral steering
Zhang, Ruiming; Fan, Yunru; Yuan, Chenzhi; Yu, Hao; Li, Hao; Wang, You; Deng, Guangwei; Song, Haizhi; You, Lixing; Guo, Guangcan; Zhou, Qiang
Sci China Inf Sci, 2025, 68(8): 180505
Keywords: spectrally multiplexing; Bell state measurement; frequency shifting; quantum elementary link; quantum network
Cite as: Zhang R M, Fan Y R, Yuan C Z, et al. Bridging quantum elementary links with spectral steering. Sci China Inf Sci, 2025, 68: 180505, doi: 10.1007/s11432-025-4508-4

Special Topic: Quantum Information
量子 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

Direct estimation of quantum channel incompatibility via a quantum switch
Wei, Yuyan; Li, Gong-Chu; Wang, Li-Wen; Hong, Xu-Song; Chen, Lei; Zhang, Si-Qi; Xu, Hua-Qin; Liu, Yuancheng; Zhang, Yong-Sheng; Chen, Geng; Li, Chuan-Feng; Guo, Guang-Can
Sci China Inf Sci, 2025, 68(8): 180502
Keywords: quantum channel incompatibility; quantum switch; quantum information; indefinite causal order
Cite as: Wei Y Y, Li G-C, Wang L-W, et al. Direct estimation of quantum channel incompatibility via a quantum switch. Sci China Inf Sci, 2025, 68: 180502, doi: 10.1007/s11432-025-4500-8

量子 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

Highly integrated broadband entropy source for quantum random number generators based on vacuum fluctuations
Wang, Xuyang; Shi, Yuqi; Wang, Ning; Yun, Jie; Li, Jiaxu; Jia, Yanxiang; Liu, Shuaishuai; Lu, Zhenguo; Zou, Jun; Li, Yongmin
Sci China Inf Sci, 2026, 69(6): 162501
Keywords: quantum random number generator; integrated entropy source; equalizer; balanced homodyne detector
Cite as: Wang X Y, Shi Y Q, Wang N, et al. Highly integrated broadband entropy source for quantum random number generators based on vacuum fluctuations. Sci China Inf Sci, 2026, 69: 162501, doi: 10.1007/s11432-025-4660-1

量子 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

Quantum computational insurance and actuarial science
Liu, Huan-Yu; Zhuang, Xi-Ning; Wang, Chao; Li, Qing-Song; Dou, Meng-Han; Chen, Zhao-Yun; Xue, Cheng; Wu, Yu-Chun; Guo, Guo-Ping; Guo, Guang-Can
Sci China Inf Sci, 2025, 68(10): 202501
Keywords: quantum computation; insurance; quantum machine learning; superconducting quantum computers
Cite as: Liu H-Y, Zhuang X-N, Wang C, et al. Quantum computational insurance and actuarial science. Sci China Inf Sci, 2025, 68: 202501, doi: 10.1007/s11432-024-4411-8

量子 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

Experimental quantum randomness certification via Einstein-Podolsky-Rosen steering in prepare-and-measure scenario
Huang, Xiaoting; Huang, Siyao; Chang, Zehong; Wang, Yunlong; Xiang, Yu; Gao, Hong; Li, Fuli; Zhang, Pei
Sci China Inf Sci, 2025, 68(10): 202401
Keywords: quantum randomness; Einstein-Podolsky-Rosen steering; prepare-and-measure scenario; one-sided device-independent; randomness certification
Cite as: Huang X T, Huang S Y, Chang Z H, et al. Experimental quantum randomness certification via Einstein-Podolsky-Rosen steering in prepare-and-measure scenario. Sci China Inf Sci, 2025, 68: 202401, doi: 10.1007/s11432-025-4503-6

量子 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Quantum metrology via mitigation of single-photon loss using an engineered nonlinear oscillator
Yang, Tian-Le; Ning, Wen; Yang, Zhen-Biao; Zheng, Shi-Biao
Sci China Inf Sci, 2026, 69(9): 192504
Keywords: quantum metrology; loss mitigation; non-Gaussian states; engineered two-photon loss; autonomous stabilization
Cite as: Yang T-L, Ning W, Yang Z-B, et al. Quantum metrology via mitigation of single-photon loss using an engineered nonlinear oscillator. Sci China Inf Sci, 2026, 69: 192504, doi: 10.1007/s11432-025-4903-y

量子 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Dynamically quantum attack detection for quantum key distribution based on deep representations
Liu, Minjie; Chen, Ye; Fan, Xiaodong; Huang, Jinquan; Mu, Tonglin; Guo, Junran; Sun, Shihai
Sci China Inf Sci, 2026, 69(9): 192503
Keywords: QKD; quantum attacks; dynamic evolutionary detection scheme; embedding model; attack feature vector database; unseen quantum attack strategies
Cite as: Liu M J, Chen Y, Fan X D, et al. Dynamically quantum attack detection for quantum key distribution based on deep representations. Sci China Inf Sci, 2026, 69: 192503, doi: 10.1007/s11432-025-4878-3

量子 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

From quantum discord to fully reference-frame-independent quantum key distribution
Wang, Rong; Zhang, Chun-Mei; Yin, Zhen-Qiang
Sci China Inf Sci, 2026, 69(9): 192502
Keywords: quantum key distribution; fully reference-frame-independent; quantum discord; security analysis; quantum resource
Cite as: Wang R, Zhang C-M, Yin Z-Q. From quantum discord to fully reference-frame-independent quantum key distribution. Sci China Inf Sci, 2026, 69: 192502, doi: 10.1007/s11432-025-4828-x

量子 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Realizing scalable conditional operations through auxiliary energy levels
Zhang, Sheng; Duan, Peng; Wang, Yun-Jie; Wang, Tian-Le; Wang, Peng; Zhao, Ren-Ze; Yang, Xiao-Yan; Zhao, Ze-An; Zhang, Hai-Feng; Li, Zhi-Fei; Wu, Yuan; Tao, Hao-Ran; Guo, Liang-Liang; Du, Lei; Zhang, Chi; Jia, Zhi-Long; Kong, Wei-Cheng; Chen, Zhao-Yun; Zhang, Zhuo-Zhi; Song, Xiang-Xiang; Wu, Yu-Chun; Guo, Guo-Ping
Sci China Inf Sci, 2026, 69(9): 192501
Keywords: noisy intermediate-scale quantum; conditional operations; transition composite gate; auxiliary energy levels; entangled-state preparation; quantum comparator
Cite as: Zhang S, Duan P, Wang Y-J, et al. Realizing scalable conditional operations through auxiliary energy levels. Sci China Inf Sci, 2026, 69: 192501, doi: 10.1007/s11432-025-4760-9

量子 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Security of few-state quantum key distribution with virtual mutual unbiased bases
Gong, Li; Hao, Chenpeng; Chen, Zhijiang; Lu, Yifei; Wang, Yang; Li, Jiaji; Zhou, Yanyang; Zhou, Chun; Li, Hongwei
Sci China Inf Sci, 2026, 69(8): 189501
Keywords: quantum cryptography; quantum communication; quantum key distribution; quantum security; finite resources
Cite as: Gong L, Hao C P, Chen Z J, et al. Security of few-state quantum key distribution with virtual mutual unbiased bases. Sci China Inf Sci, 2026, 69: 189501, doi: 10.1007/s11432-025-4612-2

Special Topic: Quantum Information
量子 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Efficient self-consistent quantum comb tomography on the product Stiefel manifold
He, Xinlin; Li, Zetong; Zheng, Congcong; Li, Sixuan; Yu, Xutao; Qian, Ling; Zhang, Runqing; Huang, Zhiguo; Han, Jize; Zhang, Zaichen
Sci China Inf Sci, 2026, 69(8): 180509
Keywords: quantum comb; tomography; Stiefel manifold; Riemannian optimization; non-Markovian gate set tomography
Cite as: He X L, Li Z T, Zheng C C, et al. Efficient self-consistent quantum comb tomography on the product Stiefel manifold. Sci China Inf Sci, 2026, 69: 180509, doi: 10.1007/s11432-026-5043-8

Special Topic: Quantum Information
量子 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

The correlated matching decoder for the 4.8.8 color code
Liu, Yantong; Wu, Junjie; Lao, Lingling
Sci China Inf Sci, 2026, 69(8): 180508
Keywords: quantum error correction; error decoding; surface code; color code; matching decoder
Cite as: Liu Y T, Wu J J, Lao L L. The correlated matching decoder for the 4.8.8 color code. Sci China Inf Sci, 2026, 69: 180508, doi: 10.1007/s11432-026-5027-y

Special Topic: Quantum Information
量子 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Offline dedicated quantum attacks on block cipher constructions based on two parallel permutation-based pseudorandom functions
Zhen, Xiao-Fan; Li, Zhen-Qiang; Fan, Jia-Cheng; Qin, Su-Juan; Gao, Fei
Sci China Inf Sci, 2026, 69(8): 180507
Keywords: quantum cryptanalysis; symmetric cryptography; offline Simon's algorithm; pseudorandom function; classical query; quantum query
Cite as: Zhen X-F, Li Z-Q, Fan J-C, et al. Offline dedicated quantum attacks on block cipher constructions based on two parallel permutation-based pseudorandom functions. Sci China Inf Sci, 2026, 69: 180507, doi: 10.1007/s11432-026-5030-8

Special Topic: Quantum Information
量子 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Distributed exact quantum amplitude amplification algorithm for arbitrary quantum states
Zhou, Xu; Tao, Wenxuan; Li, Keren; Zheng, Shenggen
Sci China Inf Sci, 2026, 69(8): 180506
Keywords: noisy intermediate-scale quantum era; distributed quantum computation; quantum amplitude amplification algorithm; mindspore quantum; quantum gate decomposition
Cite as: Zhou X, Tao W X, Li K R, et al. Distributed exact quantum amplitude amplification algorithm for arbitrary quantum states. Sci China Inf Sci, 2026, 69: 180506, doi: 10.1007/s11432-026-5020-7

Special Topic: Quantum Information
量子 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Deterministic distribution of Gaussian entanglement and quantum steering through fiber channels
Yan, Yanru; Ren, Siyu; Zhao, Mengyu; Han, Dongmei; Li, Yalin; Wang, Meihong; Su, Xiaolong
Sci China Inf Sci, 2026, 69(8): 180505
Keywords: quantum entanglement; quantum steering; distribution; fiber channel; continuous-variable
Cite as: Yan Y R, Ren S Y, Zhao M Y, et al. Deterministic distribution of Gaussian entanglement and quantum steering through fiber channels. Sci China Inf Sci, 2026, 69: 180505, doi: 10.1007/s11432-026-5008-4

Special Topic: Quantum Information
量子 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Q-Tag: watermarking quantum circuit generative models
Yang, Yang; Long, Yuzhu; Fang, Han; Chen, Zhaoyun; Li, Zhonghui; Zhang, Weiming; Guo, Guoping
Sci China Inf Sci, 2026, 69(8): 180504
Keywords: quantum circuit; IP protection; latent diffusion model; quantum circuit generative models; watermarking
Cite as: Yang Y, Long Y Z, Fang H, et al. Q-Tag: watermarking quantum circuit generative models. Sci China Inf Sci, 2026, 69: 180504, doi: 10.1007/s11432-025-5016-2

Special Topic: Quantum Information
量子 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Witnessing nonlocality in quantum networks of continuous-variable systems by generalized quasiprobability functions
Yan, Taotao; Hou, Jinchuan; Qi, Xiaofei; He, Kan
Sci China Inf Sci, 2026, 69(8): 180503
Keywords: continuous-variable system; network nonlocality; Bell-type inequality; Gaussian states; generalized quasiprobability function
Cite as: Yan T T, Hou J C, Qi X F, et al. Witnessing nonlocality in quantum networks of continuous-variable systems by generalized quasiprobability functions. Sci China Inf Sci, 2026, 69: 180503, doi: 10.1007/s11432-025-4753-8

Special Topic: Quantum Information
量子 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Scalable and highly fault-tolerant circular quantum Byzantine agreement
Weng, Chen-Xun; Li, Ming-Yang; Li, Shi-Gen; Zhu, Mengya; Sun, Xiao-Ran; Yin, Hua-Lei; Chen, Zeng-Bing
Sci China Inf Sci, 2026, 69(8): 180502
Keywords: quantum Byzantine agreement; quantum blockchain; semi-decentralized; high fault-tolerance; polynomial communication complexity; blockchain trilemma
Cite as: Weng C-X, Li M-Y, Li S-G, et al. Scalable and highly fault-tolerant circular quantum Byzantine agreement. Sci China Inf Sci, 2026, 69: 180502, doi: 10.1007/s11432-026-4996-4

Special Topic: Quantum Information
量子 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Polarization self-compensation quantum key distribution system with 5 GHz modulation
Hao, Peng-Lei; Chen, Wei; Wang, Shuang; Yin, Zhen-Qiang; He, De-Yong; Wang, Fang-Xiang; Liu, Shu-Feng; Zhou, Sheng; Wang, Yu; Guo, Guang-Can; Han, Zheng-Fu
Sci China Inf Sci, 2026, 69(8): 180501
Keywords: quantum key distribution; adaptive polarization compensation; InGaAs/InP SPAD; 5 GHz modulation; time- and wavelength-division multiplexing
Cite as: Hao P-L, Chen W, Wang S, et al. Polarization self-compensation quantum key distribution system with 5 GHz modulation. Sci China Inf Sci, 2026, 69: 180501, doi: 10.1007/s11432-025-4933-9

量子 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Implementation of deterministic quantum spatial searches in a circuit QED system
Su, Qi-Ping; Shen, Rui-Qi; Kang, Yi-Hao; Shen, Lijiong; Yang, Chui-Ping
Sci China Inf Sci, 2026, 69(6): 162504
Keywords: quantum search; continuous-time quantum walk; circuit QED; complete graph; microwave cavity
Cite as: Su Q-P, Shen R-Q, Kang Y-H, et al. Implementation of deterministic quantum spatial searches in a circuit QED system. Sci China Inf Sci, 2026, 69: 162504, doi: 10.1007/s11432-025-4566-7

量子 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Link optimization of duplex quantum communication systems
Niu, Peng-Hao; Zhang, Fei-Hao; Bao, Rui-Song; Long, Gui-Lu
Sci China Inf Sci, 2026, 69(6): 162502
Keywords: quantum communication; quantum network; link optimization
Cite as: Niu P-H, Zhang F-H, Bao R-S, et al. Link optimization of duplex quantum communication systems. Sci China Inf Sci, 2026, 69: 162502, doi: 10.1007/s11432-025-4611-8

Special Topic: Quantum Information
量子 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

GHZ-W genuinely entangled subspace verification with adaptive local measurements
Zheng, Congcong; Xu, Ping; Wang, Kun; Zhang, Zaichen
Sci China Inf Sci, 2025, 68(8): 180511
Keywords: genuinely entangled subspace; quantum verification; adaptive measurements; GHZ state; W state
Cite as: Zheng C C, Xu P, Wang K, et al. GHZ-W genuinely entangled subspace verification with adaptive local measurements. Sci China Inf Sci, 2025, 68: 180511, doi: 10.1007/s11432-024-4515-1

Special Topic: Quantum Information
量子 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Tight bounds of quantum speed limit for noisy dynamics via maximum rotation angles
Hu, Zihao; Yuan, Haidong; Zhang, Zigui; Fung, Chi-Hang Fred; Miao, Zibo
Sci China Inf Sci, 2025, 68(8): 180506
Keywords: quantum speed limit; noisy dynamics
Cite as: Hu Z H, Yuan H D, Zhang Z G, et al. Tight bounds of quantum speed limit for noisy dynamics via maximum rotation angles. Sci China Inf Sci, 2025, 68: 180506, doi: 10.1007/s11432-024-4484-9

Special Topic: Quantum Information
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Variational quantum eigensolver with linear depth problem-inspired ansatz for solving portfolio optimization in finance
Wang, Shengbin; Wang, Peng; Li, Guihui; Zhao, Shubin; Zhao, Dongyi; Wang, Jing; Fang, Yuan; Dou, Menghan; Gu, Yongjian; Wu, Yu-Chun; Guo, Guo-Ping
Sci China Inf Sci, 2025, 68(8): 180504
Keywords: variational quantum eigensolver; hardware-efficient Dicke state ansatz; quantum/classical hybrid distributed computing; fragment reuse technique; portfolio optimization
Cite as: Wang S B, Wang P, Li G H, et al. Variational quantum eigensolver with linear depth problem-inspired ansatz for solving portfolio optimization in finance. Sci China Inf Sci, 2025, 68: 180504, doi: 10.1007/s11432-024-4185-1

光电子(31)

Special Topic: Photonics Technology
Highly Cited in 202509 光电子 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 20

Multispectral non-line-of-sight imaging via deep fusion photography
Liu, Hao; Xu, Zhen; Wei, Yifan; Han, Kai; Peng, Xin
Sci China Inf Sci, 2025, 68(4): 140407
Keywords: non-line-of-sight imaging; multispectral deep fusion; Kolmogorov-Arnold network; VIS-SWIR-LWIR multispectral imaging; learning-based imaging method
Cite as: Liu H, Xu Z, Wei Y F, et al. Multispectral non-line-of-sight imaging via deep fusion photography. Sci China Inf Sci, 2025, 68: 140407, doi: 10.1007/s11432-024-4256-3

Special Topic: Photonics Technology
光电子 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 19

Ultra-low power MoS2 optoelectronic synapse with wavelength sensitivity for color target recognition
Wei, Bo; Chen, Yabo; Han, Xiaotong; Kang, Yan; Liang, Bujia; Li, Cheng; Yang, Xiaokuo; Fang, Liang; Peng, Yuanxi
Sci China Inf Sci, 2025, 68(4): 140406
Keywords: optoelectronic synapse; neuromorphic vision system; color recognition; 2D materials; image pre-processing
Cite as: Wei B, Chen Y B, Han X T, et al. Ultra-low power MoS2 optoelectronic synapse with wavelength sensitivity for color target recognition. Sci China Inf Sci, 2025, 68: 140406, doi: 10.1007/s11432-024-4200-5

Special Topic: Photonics Technology
光电子 REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 15

Silicon integrated microwave photonics
Tao, Yuansheng; Tao, Zihan; Li, Le; Wu, Yichen; Shen, Bitao; Wang, Yimeng; Xing, Luwen; Li, Wencan; Chang, Huajin; Zhang, Jingmei; Shu, Haowen; Zhu, Ninghua; Wang, Xingjun
Sci China Inf Sci, 2025, 68(4): 140401
Keywords: silicon photonics; microwave photonics; broadband signal processing; hybrid integration
Cite as: Tao Y S, Tao Z H, Li L, et al. Silicon integrated microwave photonics. Sci China Inf Sci, 2025, 68: 140401, doi: 10.1007/s11432-025-4330-y

Special Topic: Photonics Technology
光电子 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 8

Temporal-spectral correlation dynamics of Raman random fiber laser
Ni, Longqun; Qi, Yifei; Bao, Xingyu; Zhang, Jing; Wang, Pan; Wu, Han; Wang, Zinan
Sci China Inf Sci, 2025, 68(4): 140404
Keywords: random fiber laser; microscopic characteristics; temporal-spectral correlation; random spikes; nonlinear optics
Cite as: Ni L Q, Qi Y F, Bao X Y, et al. Temporal-spectral correlation dynamics of Raman random fiber laser. Sci China Inf Sci, 2025, 68: 140404, doi: 10.1007/s11432-024-4178-x

Special Topic: Photonics Technology
光电子 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 7

High-temperature optoelectronic synaptic devices based on 4H-SiC
Bu, Mingxuan; Wang, Yue; Ni, Zhenyi; Li, Dongke; Yang, Deren; Pi, Xiaodong
Sci China Inf Sci, 2025, 68(4): 140402
Keywords: optoelectronic synaptic devices; 4H-SiC; synaptic plasticity; neuromorphic computing; high-temperature devices
Cite as: Bu M X, Wang Y, Ni Z Y, et al. High-temperature optoelectronic synaptic devices based on 4H-SiC. Sci China Inf Sci, 2025, 68: 140402, doi: 10.1007/s11432-024-4046-x

Special Topic: Photonics Technology
光电子 RESEARCH PAPER Video Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 6

Smart fiber-optic masks: real-time respiratory monitoring and health analysis
Yu, Qi; Zhang, Ya-Nan; Zhang, Jiaqi; Yang, Shuang; Jiang, Lingxiao; Li, Xuegang
Sci China Inf Sci, 2025, 68(4): 140408
Keywords: smart mask; respiratory monitoring; fiber optic sensor; health management; anti-interference
Cite as: Yu Q, Zhang Y-N, Zhang J Q, et al. Smart fiber-optic masks: real-time respiratory monitoring and health analysis. Sci China Inf Sci, 2025, 68: 140408, doi: 10.1007/s11432-024-4323-6

Special Topic: Photonics Technology
光电子 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 6

High quantum efficiency ultraviolet photodetector based on graphene and truncated silicon nanocones
Tian, Feng; Wu, Shaoxiong; Liu, Xinyu; Qiao, Baoshi; Pu, Dong; Li, Zongwen; Chen, Cheng; Cao, Xiaoxue; Bodepudi, Srikrishna Chanakya; Anwar, Muhammad Abid; Wang, Xiaochen; Zhao, Yuda; Yu, Bin; Hasan, Tawfique; Hu, Huan; Xu, Yang
Sci China Inf Sci, 2025, 68(4): 140405
Keywords: silicon; graphene; ultraviolet photodetector; truncated cones; nanostructures
Cite as: Tian F, Wu S X, Liu X Y, et al. High quantum efficiency ultraviolet photodetector based on graphene and truncated silicon nanocones. Sci China Inf Sci, 2025, 68: 140405, doi: 10.1007/s11432-024-4194-9

光电子 REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 5

Recent progress and challenges of infrared quantum dots
Hu, Yin; Xin, Kaiyao; Qiu, Siqi; Hu, Jianwen; Wang, Pan; Zhai, Shenqiang; Shen, Guozhen; Yang, Juehan; Wei, Zhongming
Sci China Inf Sci, 2025, 68(8): 181401
Keywords: infrared quantum dots; colloidal quantum dots; physical properties; infrared optoelectronics; infrared photodetector
Cite as: Hu Y, Xin K Y, Qiu S Q, et al. Recent progress and challenges of infrared quantum dots. Sci China Inf Sci, 2025, 68: 181401, doi: 10.1007/s11432-025-4383-x

From CAS & CAE Members
光电子 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 5

Multi-wavelength plasmonic optoelectronic memristor for reconfigurable logic operations and mixed-color pattern recognition
Han, Jiaqi; Li, Zhuangzhuang; Zeng, Tao; Shan, Xuanyu; Su, Riya; Lin, Ya; Wang, Zhongqiang; Zhao, Xiaoning; Fu, Shencheng; Xu, Haiyang; Liu, Yichun
Sci China Inf Sci, 2025, 68(2): 120401
Keywords: optoelectronic memristor; localized surface plasmon resonance; multi-wavelength; resistive switching; color pattern recognition
Cite as: Han J Q, Li Z Z, Zeng T, et al. Multi-wavelength plasmonic optoelectronic memristor for reconfigurable logic operations and mixed-color pattern recognition. Sci China Inf Sci, 2025, 68: 120401, doi: 10.1007/s11432-024-4215-2

光电子 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 4

InGaN-based high-speed mini laser diode surpasses PAM-4 visible light links by over 30 Gbps
Hu, Junhui; Gu, Zhenqian; Jia, Haolin; Yang, Zhen; Li, Zengxin; Wu, Jiabin; Sun, Leihao; Sun, Aolong; Huang, Ouhan; Xia, Changsheng; Ooi, Boon S.; Shi, Jianyang; Li, Ziwei; Zhang, Junwen; Yu, Shaohua; Chi, Nan; Shen, Chao
Sci China Inf Sci, 2026, 69(3): 132405
Keywords: visible light communication; InGaN laser diode; mini-cavity; bandwidth; damping effect; data rate
Cite as: Hu J H, Gu Z Q, Jia H L, et al. InGaN-based high-speed mini laser diode surpasses PAM-4 visible light links by over 30 Gbps. Sci China Inf Sci, 2026, 69: 132405, doi: 10.1007/s11432-025-4581-8

光电子 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 3

2.5 GHz GaN multiple quantum well micro-photodetector for high-speed visible light communication
Liao, Yue; Liu, Xuyang; Lin, Runze; Cui, Xugao; Tian, Pengfei
Sci China Inf Sci, 2026, 69(4): 142401
Keywords: micro-LED; photodetector; visible light communication
Cite as: Liao Y, Liu X Y, Lin R Z, et al. 2.5 GHz GaN multiple quantum well micro-photodetector for high-speed visible light communication. Sci China Inf Sci, 2026, 69: 142401, doi: 10.1007/s11432-024-4548-3

光电子 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 3

Photonic reservoir computing based min-entropy evaluation for random number generators
Wang, Jianjiang; Cai, Qiang; Zhang, Jianguo; Li, Pu; Shore, K. Alan; Qin, Yuwen; Wang, Yuncai
Sci China Inf Sci, 2025, 68(8): 189402
Keywords: laser chaos; photonic reservior computing; physical random number generation; semiconductor laser; secure communication
Cite as: Wang J J, Cai Q, Zhang J G, et al. Photonic reservoir computing based min-entropy evaluation for random number generators. Sci China Inf Sci, 2025, 68: 189402, doi: 10.1007/s11432-025-4382-4

光电子 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

Retina-inspired visible color discrimination optoelectronic synapse via local surface plasmon-assisted reduction of graphene oxide
Tian, Qiaoling; Li, Zhuangzhuang; Sui, Xinyu; Zhao, Xiaoning; Lin, Ya; Wang, Zhongqiang; Tao, Ye; Xu, Haiyang; Liu, Yichun
Sci China Inf Sci, 2026, 69(6): 162406
Keywords: memristor; optoelectronic synapse; surface plasmon; graphene oxide; visual color discrimination; neuromorphic vision
Cite as: Tian Q L, Li Z Z, Sui X Y, et al. Retina-inspired visible color discrimination optoelectronic synapse via local surface plasmon-assisted reduction of graphene oxide. Sci China Inf Sci, 2026, 69: 162406, doi: 10.1007/s11432-025-4763-6

光电子 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

T-type differential Helmholtz photoacoustic cell with microphone array for simultaneous multi-gas monitoring at ppb level
Deng, Zhuobei; Li, Yafei; Guan, Yanxiong; Huang, Chen; Jiang, Yanyu; Wang, Yifan; Deng, Wanling; Huang, Junkai; Zheng, Chuantao; Guo, Tuan
Sci China Inf Sci, 2026, 69(2): 122401
Keywords: photoacoustic spectroscopy; gas detection; high-sensitivity; Helmholtz photoacoustic cell; microphone array
Cite as: Deng Z B, Li Y F, Guan Y X, et al. T-type differential Helmholtz photoacoustic cell with microphone array for simultaneous multi-gas monitoring at ppb level. Sci China Inf Sci, 2026, 69: 122401, doi: 10.1007/s11432-025-4629-0

光电子 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

Photon-wave traveling model for analyzing spectral characteristics of light sources without resonant cavities
Wang, Xinyue
Sci China Inf Sci, 2025, 68(9): 199402
Keywords: optoelectronics; light sources without cavities; superluminescent light emitting diodes; spectral characteristics; photon-wave travelling model
Cite as: Wang X Y. Photon-wave traveling model for analyzing spectral characteristics of light sources without resonant cavities. Sci China Inf Sci, 2025, 68: 199402, doi: 10.1007/s11432-024-4410-9

Special Topic: Photonics Technology
光电子 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

β-Ga2O3 solar-blind ultraviolet light detector with infinite PDCR
Chen, Haifeng; Zhao, Xu; Liu, Xiangtai; Lu, Qin; Wang, Shaoqing; Wang, Zhan; Jia, Yifan; Guan, Yunhe; Li, Lijun; Hao, Yue
Sci China Inf Sci, 2025, 68(4): 140403
Keywords: Ga2O3; PDCR; Schottky junction; solar-blind ultraviolet; photodetector
Cite as: Chen H F, Zhao X, Liu X T, et al. β-Ga2O3 solar-blind ultraviolet light detector with infinite PDCR. Sci China Inf Sci, 2025, 68: 140403, doi: 10.1007/s11432-024-4092-3

光电子 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

Optical-chaos temporal ghost imaging
Zhang, Rong; Wang, Anbang; Wang, Longsheng; Jia, Zhiwei; Wang, Yuncai; Qin, Yuwen
Sci China Inf Sci, 2026, 69(6): 162407
Keywords: temporal ghost imaging; correlated imaging; optical chaos; chaotic laser; semiconductor lasers; fast information reconstruction
Cite as: Zhang R, Wang A B, Wang L S, et al. Optical-chaos temporal ghost imaging. Sci China Inf Sci, 2026, 69: 162407, doi: 10.1007/s11432-025-4761-5

光电子 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

Photo-synapses based on single-crystalline VO2 films for in-sensor information processing
Hou, Xinjie; Wang, Xintian; Yin, Lei; Gong, Xunguo; Peng, Ximeng; Wen, Yao; Cai, Yuchen; Cheng, Ruiqing; He, Jun
Sci China Inf Sci, 2026, 69(6): 162405
Keywords: photo-synapse; VO2 film; photodetector array; in-sensor computing; information compression
Cite as: Hou X J, Wang X T, Yin L, et al. Photo-synapses based on single-crystalline VO2 films for in-sensor information processing. Sci China Inf Sci, 2026, 69: 162405, doi: 10.1007/s11432-025-4762-8

光电子 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

A sensing-memory-computing integrated optoelectronic synaptic device based on Ag/PtTe2/FTO for artificial vision information processing
Zhang, Xin; Lian, Xiaojuan; Li, Shiyu; He, Nan; Ban, Chaoyi; Chen, Junyuan; Liu, Xiaoyan; Yan, Dapeng; Huang, Wen; Cai, Zhikuang; Wang, Lei
Sci China Inf Sci, 2026, 69(5): 159401
Keywords: 2D transition metal dichalcogenides; optoelectronic synaptic device; synaptic plasticity; neuromorphic computing; artificial visual system
Cite as: Zhang X, Lian X J, Li S Y, et al. A sensing-memory-computing integrated optoelectronic synaptic device based on Ag/PtTe2/FTO for artificial vision information processing. Sci China Inf Sci, 2026, 69: 159401, doi: 10.1007/s11432-025-4718-3

光电子 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

Artificial intelligence—assisted pump-locked random lasers
Tong, Junhua; Shi, Xiaoyu; Xu, Zhiyang; Iqbal, Naeem; Ge, Kun; Zhai, Tianrui
Sci China Inf Sci, 2026, 69(3): 132401
Keywords: random lasers; artificial intelligence; genetic algorithms; mode selection; pump-locked
Cite as: Tong J H, Shi X Y, Xu Z Y, et al. Artificial intelligence—assisted pump-locked random lasers. Sci China Inf Sci, 2026, 69: 132401, doi: 10.1007/s11432-025-4528-6

光电子 REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

Advances in material, structural, and integration strategies for DFB lasers in photonic sensing platforms
Hu, Miao; Zhang, Tianyu; Li, Yao; Liang, Lei; Qin, Li; Chen, Yongyi; Song, Yue; Lei, Yuxin; Jia, Peng; Qiu, Cheng; Wang, Yubing; Zheng, Chuantao; Wang, Lijun
Sci China Inf Sci, 2026, 69(3): 131401
Keywords: DFB lasers; on-chip laser sources; photonic integration; III-V-on-silicon; optical sensing
Cite as: Hu M, Zhang T Y, Li Y, et al. Advances in material, structural, and integration strategies for DFB lasers in photonic sensing platforms. Sci China Inf Sci, 2026, 69: 131401, doi: 10.1007/s11432-025-4662-3

光电子 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

Identifying the asymmetric superposition of fractional orbital-angular-momentum modes via neural networks with a small dataset
Ma, Rong; Li, Lihong; Qu, Xiaoqin; Ning, Jiajie; Liang, Jianan; Wang, Meihong; Su, Xiaolong
Sci China Inf Sci, 2025, 68(10): 209406
Keywords: optical communication; fractional OAM modes; neural network; identification; classification task
Cite as: Ma R, Li L H, Qu X Q, et al. Identifying the asymmetric superposition of fractional orbital-angular-momentum modes via neural networks with a small dataset. Sci China Inf Sci, 2025, 68: 209406, doi: 10.1007/s11432-025-4462-4

光电子 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Giant orbit-to-charge conversion induced via the inverse orbital Hall effect
Xu, Renyou; Zhang, Hui; Jiang, Yuhao; Cheng, Houyi; Xie, Yunfei; Yao, Yuxuan; Xiong, Danrong; Zhu, Zhaozhao; Ning, Xiaobai; Chen, Runze; Huang, Yan; Du, Ao; Xu, Shijie; Cai, Jianwang; Xu, Yong; Liu, Tao; Sun, Jirong; Zhao, Weisheng
Sci China Inf Sci, 2026, 69(9): 199404
Keywords: orbitronics; inverse spin Hall effect; spin pumping; spin Seebeck effect; orbital Hall effect
Cite as: Xu R Y, Zhang H, Jiang Y H, et al. Giant orbit-to-charge conversion induced via the inverse orbital Hall effect. Sci China Inf Sci, 2026, 69: 199404, doi: 10.1007/s11432-026-4955-x

光电子 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

2D fluorophlogopite mica as van der Waals dielectrics for high-breakdown-strength field-effect transistors
Xin, Kaiyao; Zhao, Zhe; Zhou, Ziqi; Qiu, Siqi; Long, Haoran; He, Kexin; Gong, Jian; Liu, Fengqi; Yang, Juehan; Liu, Yue-Yang; Zhai, Shenqiang; Wei, Zhongming
Sci China Inf Sci, 2026, 69(9): 192402
Keywords: two-dimensional material; fluorophlogopite mica; van der Waals contact; field-effect transistor
Cite as: Xin K Y, Zhao Z, Zhou Z Q, et al. 2D fluorophlogopite mica as van der Waals dielectrics for high-breakdown-strength field-effect transistors. Sci China Inf Sci, 2026, 69: 192402, doi: 10.1007/s11432-025-4813-y

光电子 REVIEW Webpage Webpage-cn SpringerLink Google Scholar

Integration of two-dimensional magnets in magnetic tunnel junctions: prospects and challenges
Li Q Q, He K, Niu R R, et al
Sci China Inf Sci, 2026, 69(9): 191401
Keywords: 2D magnetic materials; magnetic tunnel junction; quantum tunneling; spintronics; magnetic random-access memory
Cite as: Li Q Q, He K, Niu R R, et al. Integration of two-dimensional magnets in magnetic tunnel junctions: prospects and challenges. Sci China Inf Sci, 2026, 69: 191401, doi: 10.1007/s11432-025-4789-2

Special Topic: Advanced Optoelectronics Based on Two-Dimensional Materials
光电子 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

A platform of MoS2/4H-SiC heterostructure photonic synapses for low-power neuromorphic machine vision
Zhang, Gaotian; Sun, Ruoyao; Gong, Yining; Li, Sina; Yang, Mengmeng; Liu, Xiao; Luo, Dongxiang; Wang, Xingfu; Zhang, Feng; Gao, Wei
Sci China Inf Sci, 2026, 69(7): 170406
Keywords: MoS2/4H-SiC heterostructure; neuromorphic devices; biological synapses; non-volatile long-term memory; handwritten digit recognition
Cite as: Zhang G T, Sun R Y, Gong Y N, et al. A platform of MoS2/4H-SiC heterostructure photonic synapses for low-power neuromorphic machine vision. Sci China Inf Sci, 2026, 69: 170406, doi: 10.1007/s11432-026-4987-2

Special Topic: Advanced Optoelectronics Based on Two-Dimensional Materials
光电子 REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Advances in machine vision based on two-dimensional photodetectors: device engineering and computational intelligence
Li, Jiaxin; Tang, Xiaojie; Zhang, Enen; Shu, Lelun; Zhou, Ziqi; Jiang, Fagang; Wang, Xinghua; Yu, Yali; Wei, Zhongming
Sci China Inf Sci, 2026, 69(7): 170401
Keywords: two-dimensional materials; photodetectors; machine vision; multidimensional optical sensing; computational intelligence
Cite as: Li J X, Tang X J, Zhang E E, et al. Advances in machine vision based on two-dimensional photodetectors: device engineering and computational intelligence. Sci China Inf Sci, 2026, 69: 170401, doi: 10.1007/s11432-025-4964-1

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An optoelectronic artificial spiking neuron array with biomimetic spike-temporal pattern for in-sensor visual prediction
Wang, Rui; Liu, Guolei; Li, Dingwei; Jing, Xiaotao; Li, Fanfan; Wu, Zhixian; Zhang, Zhongfang; Ren, Huihui; Wang, Saisai; Huang, Qi; Ma, Xiaohua; Zhu, Bowen; Qiu, Min; Wang, Hong; Hao, Yue
Sci China Inf Sci, 2026, 69(4): 142404
Keywords: artificial neuron; synapse; spiking neural network; in-sensor computing; prediction
Cite as: Wang R, Liu G L, Li D W, et al. An optoelectronic artificial spiking neuron array with biomimetic spike-temporal pattern for in-sensor visual prediction. Sci China Inf Sci, 2026, 69: 142404, doi: 10.1007/s11432-025-4661-y

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Multimode-fused reservoir computing based on CH3NH3PbI3 nanowire optoelectronic memristor for spatiotemporal information processing
Wang, Yue; Shan, Xuanyu; Wang, Qiang; Wang, Zewei; Liu, Siyu; Liu, Wei; Zheng, Jiahui; Zhao, Xiaoning; Wang, Zhongqiang; Lin, Ya; Tao, Ye; Xu, Haiyang; Liu, Yichun
Sci China Inf Sci, 2026, 69(4): 142403
Keywords: multisensory-fused; reservoir computing; optoelectronic memristor; halide perovskite; neuromorphic device
Cite as: Wang Y, Shan X Y, Wang Q, et al. Multimode-fused reservoir computing based on CH3NH3PbI3 nanowire optoelectronic memristor for spatiotemporal information processing. Sci China Inf Sci, 2026, 69: 142403, doi: 10.1007/s11432-025-4643-6

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Leveraging ±1st-order Bragg diffraction synergy for bandwidth enhancement and frequency downshift in acousto-optic modulators
Zhong, Zixuan; Yuan, Xueqiao; Wu, Wei; Zhong, Ziqi; Ren, Tongtian; Liu, Tao; Yin, Guolu; Zhu, Tao
Sci China Inf Sci, 2026, 69(3): 139405
Keywords: acousto-optic modulation; bandwidth; optical fiber sensor; distributed optical fiber sensing; Bragg diffraction
Cite as: Zhong Z X, Yuan X Q, Wu W, et al. Leveraging ±1st-order Bragg diffraction synergy for bandwidth enhancement and frequency downshift in acousto-optic modulators. Sci China Inf Sci, 2026, 69: 139405, doi: 10.1007/s11432-025-4625-y

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Spintronic-metasurface terahertz emitters with magnetic-field manipulated polarizations
Yang, Qing; Huang, Yan; Cheng, Houyi; Zhang, Jie; Zhang, Fan; Xu, Yong; Wen, Lianggong; Zhao, Weisheng; Nie, Tianxiao
Sci China Inf Sci, 2025, 68(11): 212401
Keywords: chiral terahertz waves modulation; spintronic terahertz emission; spintronic-metasurface THz emitters; the twisted magnetic field; broadband
Cite as: Yang Q, Huang Y, Cheng H Y, et al. Spintronic-metasurface terahertz emitters with magnetic-field manipulated polarizations. Sci China Inf Sci, 2025, 68: 212401, doi: 10.1007/s11432-024-4440-9