新材料(35)

RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 18

Analyzing electrostatic modulation of signal transduction efficiency in MoS2 nanoelectromechanical resonators with interferometric readout
Zhu, Jiankai; Zhang, Pengcheng; Yang, Rui; Wang, Zenghui
Sci China Inf Sci, 2022, 65(2): 122409
Keywords: mos2; 2d nems; resonators; laser interferometry; responsivity
Cite as: Zhu J K, Zhang P C, Yang R, et al. Analyzing electrostatic modulation of signal transduction efficiency in MoS2 nanoelectromechanical resonators with interferometric readout. Sci China Inf Sci, 2022, 65(2): 122409, doi: 10.1007/s11432-021-3297-x

REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 16

Recent progress in 2D van der Waals heterostructures: fabrication, properties, and applications
Wang, Zenghui; Xu, Bo; Pei, Shenghai; Zhu, Jiankai; Wen, Ting; Jiao, Chenyin; Li, Jing; Zhang, Maodi; Xia, Juan
Sci China Inf Sci, 2022, 65(11): 211401
Keywords: 2D materials; van der Waals heterostructure; interlayer coupling; stacking; layered nanostructures
Cite as: Wang Z H, Xu B, Pei S H, et al. Recent progress in 2D van der Waals heterostructures: fabrication, properties, and applications. Sci China Inf Sci, 2022, 65(11): 211401, doi: 10.1007/s11432-021-3432-6

RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 12

Toward practical gas sensing with rapid recovery semiconducting carbon nanotube film sensors
Liu, Fangfang; Xiao, Mengmeng; Ning, Yongkai; Zhou, Shaoyuan; He, Jianping; Lin, Yanxia; Zhang, Zhiyong
Sci China Inf Sci, 2022, 65(6): 162402
Keywords: carbon nanotube; gas sensor; thin-film transistors; rapid recovery
Cite as: Liu F F, Xiao M M, Ning Y K, et al. Toward practical gas sensing with rapid recovery semiconducting carbon nanotube film sensors. Sci China Inf Sci, 2022, 65(6): 162402, doi: 10.1007/s11432-021-3286-3

RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 8

Spin logic operations based on magnetization switching by asymmetric spin current
Li, Yucai; Zhang, Nan; Wang, Kaiyou
Sci China Inf Sci, 2022, 65(2): 122404
Keywords: spin orbit torque; spin currents; spin current gradient; magnetization switching; spin logic
Cite as: Li Y C, Zhang N, Wang K Y. Spin logic operations based on magnetization switching by asymmetric spin current. Sci China Inf Sci, 2022, 65(2): 122404, doi: 10.1007/s11432-020-3246-8

Special Topic: Two-Dimensional Materials and Device Applications
PROGRESS Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 6

From lab to fab: path forward for 2D material electronics
Ning, Hongkai; Yu, Zhihao; Li, Taotao; Shen, Haoliang; Long, Gen; Shi, Yi; Wang, Xinran
Sci China Inf Sci, 2023, 66(6): 160411
Keywords: two-dimensional materials; transition-metal dichalcogenides; equipment; integrated circuits; roadmap
Cite as: Ning H K, Yu Z H, Li T T, et al. From lab to fab: path forward for 2D material electronics. Sci China Inf Sci, 2023, 66(6): 160411, doi: 10.1007/s11432-023-3752-3

RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 5

Mid-infrared plasmonic silicon quantum dot/HgCdTe photodetector with ultrahigh specific detectivity
Cui, Yueying; Tong, Zhouyu; Zhang, Xinlei; Wang, Wenhui; Zhao, Weiwei; Yu, Yuanfang; Pi, Xiaodong; Zhang, Jialin; Ni, Zhenhua
Sci China Inf Sci, 2023, 66(4): 142404
Keywords: doped silicon quantum dots; HgCdTe; localized surface plasmon resonance; hot-hole tunneling; mid-infrared photodetector
Cite as: Cui Y Y, Tong Z Y, Zhang X L, et al. Mid-infrared plasmonic silicon quantum dot/HgCdTe photodetector with ultrahigh specific detectivity. Sci China Inf Sci, 2023, 66(4): 142404, doi: 10.1007/s11432-022-3549-7

Special Topic: Two-Dimensional Materials and Device Applications
REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 4

Two-dimensional materials-based integrated hardware
Peng, Zhuiri; Lin, Runfeng; Li, Zheng; Xu, Langlang; Yu, Xiangxiang; Huang, Xinyu; Shi, Wenhao; He, Xiao; Meng, Xiaohan; Tong, Lei; Miao, Xiangshui; Ye, Lei
Sci China Inf Sci, 2023, 66(6): 160401
Keywords: two-dimensional materials; integrated circuit; integrated sensor; integrated optoelectronics
Cite as: Peng Z R, Lin R F, Li Z, et al. Two-dimensional materials-based integrated hardware. Sci China Inf Sci, 2023, 66(6): 160401, doi: 10.1007/s11432-023-3744-2

LETTER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 4

Van der Waals heterostructure tunnel FET with potential modulation beyond junction region
Qin, Wenjing; Lv, Yawei; Xia, Zhen; Liao, Lei; Jiang, Changzhong
Sci China Inf Sci, 2022, 65(10): 209401
Keywords: van der Waals; heterostructure; tunnel FET; type-III band alignment; channel potential; density functional theory; Hamiltonian
Cite as: Qin W J, Lv Y W, Xia Z, et al. Van der Waals heterostructure tunnel FET with potential modulation beyond junction region. Sci China Inf Sci, 2022, 65(10): 209401, doi: 10.1007/s11432-021-3335-3

Special Topic: Two-Dimensional Materials and Device Applications
REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 3

Multidimensional modulation of light fields via a combination of two-dimensional materials and meta-structures
Zheng, Zhipeng; Huang, Yijing; Wu, Feng; Zhang, Han; Fang, Zheyu
Sci China Inf Sci, 2023, 66(6): 160403
Keywords: two-dimensional materials; electromagnetic meta-structures; light field modulation; surface plasma polarisation; surface plasmon
Cite as: Zheng Z P, Huang Y J, Wu F, et al. Multidimensional modulation of light fields via a combination of two-dimensional materials and meta-structures. Sci China Inf Sci, 2023, 66(6): 160403, doi: 10.1007/s11432-023-3753-9

Special Topic: Two-Dimensional Materials and Device Applications
REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 3

Recent progress of layered memristors based on two-dimensional MoS2
Tong, Wei; Liu, Yuan
Sci China Inf Sci, 2023, 66(6): 160402
Keywords: memristor; switching mechanism; MoS2; 2D materials
Cite as: Tong W, Liu Y. Recent progress of layered memristors based on two-dimensional MoS2. Sci China Inf Sci, 2023, 66(6): 160402, doi: 10.1007/s11432-023-3751-y

RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 3

Knowledge-based neural network SPICE modeling for MOSFETs and its application on 2D material field-effect transistors
Qi, Guodong; Chen, Xinyu; Hu, Guangxi; Zhou, Peng; Bao, Wenzhong; Lu, Ye
Sci China Inf Sci, 2023, 66(2): 122405
Keywords: knowledge-based neural network; MOSFET; 2D material FETs; Monte Carlo simulations; circuit benchmark
Cite as: Qi G D, Chen X Y, Hu G X, et al. Knowledge-based neural network SPICE modeling for MOSFETs and its application on 2D material field-effect transistors. Sci China Inf Sci, 2023, 66(2): 122405, doi: 10.1007/s11432-021-3483-6

NEWS & VIEWS Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

Ohmic-contact ballistic 2D InSe transistors: promising candidates for more Moore electronics
Li, Hong; Li, Qiuhui; Lu, Jing
Sci China Inf Sci, 2024, 67(3): 137401
Keywords: 2D InSe Transistors; Ballistic; Ohmic-contact; 10 nm; More Moore
Cite as: Li H, Li Q H, Lu J. Ohmic-contact ballistic 2D InSe transistors: promising candidates for more Moore electronics. Sci China Inf Sci, 2024, 67(3): 137401, doi: 10.1007/s11432-023-3884-3

Special Topic: Two-Dimensional Materials and Device Applications
RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

AtomGAN: unsupervised deep learning for fast and accurate defect detection of 2D materials at the atomic scale
Cheng, Danpeng; Sha, Wuxin; Xu, Zuo; Li, Shide; Yin, Zhigao; Lang, Yuling; Tang, Shun; Cao, Yuan-Cheng
Sci China Inf Sci, 2023, 66(6): 160410
Keywords: deep learning; generative adversarial network; defect detection; atomic resolution; 2D materials
Cite as: Cheng D P, Sha W X, Xu Z, et al. AtomGAN: unsupervised deep learning for fast and accurate defect detection of 2D materials at the atomic scale. Sci China Inf Sci, 2023, 66(6): 160410, doi: 10.1007/s11432-022-3757-x

Special Topic: Two-Dimensional Materials and Device Applications
RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

Simultaneous optimization of phononic and electronic transport in two-dimensional Bi2O2Se by defect engineering
Yang, Fang; Ng, Hong Kuan; Wu, Jing; Zhao, Yunshan; Lu, Junpeng
Sci China Inf Sci, 2023, 66(6): 160408
Keywords: 2D Bi2O2Se; thermal conductivity; oxygens defects; phonon scattering; mobility
Cite as: Yang F, Ng H K, Wu J, et al. Simultaneous optimization of phononic and electronic transport in two-dimensional Bi2O2Se by defect engineering. Sci China Inf Sci, 2023, 66(6): 160408, doi: 10.1007/s11432-023-3758-4

Special Topic: Two-Dimensional Materials and Device Applications
RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

Near-infrared optoelectronic synapses based on a Te/α-In2Se3 heterojunction for neuromorphic computing
Yan, Tao; Cai, Yuchen; Wang, Yanrong; Yang, Jia; Li, Shuhui; Zhan, Xueying; Wang, Fengmei; Cheng, Ruiqing; Wang, Feng; He, Jun; Wang, Zhenxing
Sci China Inf Sci, 2023, 66(6): 160404
Keywords: near infrared; phototransistor; two-dimensional ferroelectric semiconductor; artificial neural networks; optoelectronic synapses
Cite as: Yan T, Cai Y C, Wang Y R, et al. Near-infrared optoelectronic synapses based on a Te/α-In2Se3 heterojunction for neuromorphic computing. Sci China Inf Sci, 2023, 66(6): 160404, doi: 10.1007/s11432-022-3695-1

RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

Efficient charge transfer in WS2/WxMo1−xS2 heterostructure empowered by energy level hybridization
An, Xuhong; Zhang, Yehui; Yu, Yuanfang; Zhao, Weiwei; Yang, Yutian; Niu, Xianghong; Luo, Xuan; Lu, Junpeng; Wang, Jinlan; Ni, Zhenhua
Sci China Inf Sci, 2023, 66(2): 122404
Keywords: van der Waals heterostructure; band offset; hybridization strength; charge transfer; photoluminescence quenching
Cite as: An X H, Zhang Y H, Yu Y F, et al. Efficient charge transfer in WS2/WxMo1−xS2 heterostructure empowered by energy level hybridization. Sci China Inf Sci, 2023, 66(2): 122404, doi: 10.1007/s11432-022-3465-2

RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

Investigation and mitigation of Mott neuronal oscillation fluctuation in spiking neural network
Wu, Lindong; Wang, Zongwei; Bao, Lin; Shan, Linbo; Yu, Zhizhen; Yang, Yunfan; Zhang, Shuangjie; Bai, Guandong; Wang, Cuimei; Robertson, John; Wang, Yuan; Cai, Yimao; Huang, Ru
Sci China Inf Sci, 2024, 67(2): 122404
Keywords: Mott neuron; oscillation fluctuation; variation-aware Mott neuronal model; conversion-based spiking neural network; activation function boundary
Cite as: Wu L D, Wang Z W, Bao L, et al. Investigation and mitigation of Mott neuronal oscillation fluctuation in spiking neural network. Sci China Inf Sci, 2024, 67(2): 122404, doi: 10.1007/s11432-023-3745-y

LETTER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

2.29-kV GaN-based double-channel Schottky barrier diodes on Si substrates with high VON uniformity
Huang, Ren; Zhang, Weihang; Zhang, Jincheng; Su, Chunxu; Liu, Xi; Fu, Liyu; Hao, Yue
Sci China Inf Sci, 2023, 66(6): 169404
Keywords: GaN; Schottky barrier diode; double channel; transport mechanism; thermal stability; high breakdown voltage
Cite as: Huang R, Zhang W H, Zhang J C, et al. 2.29-kV GaN-based double-channel Schottky barrier diodes on Si substrates with high VON uniformity. Sci China Inf Sci, 2023, 66(6): 169404, doi: 10.1007/s11432-022-3520-8

LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

Ultrahigh gain hot-electron tunneling transistor approaching the collection limit
Lin, Jun; Luo, Pengfei; Duan, Xinpei; Zhang, Wujun; Ma, Chao; Bu, Tong; Su, Wanhan; Jiang, Bei; Li, Guoli; Zou, Xuming; Yu, Ting; Liao, Lei; Liu, Xingqiang
Sci China Inf Sci, 2023, 66(6): 169403
Keywords: hot electron transistor; tunneling; collection factor; current gain; interface
Cite as: Lin J, Luo P F, Duan X P, et al. Ultrahigh gain hot-electron tunneling transistor approaching the collection limit. Sci China Inf Sci, 2023, 66(6): 169403, doi: 10.1007/s11432-022-3537-1

RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Lead-free perovskites-based photonic synaptic devices with zero electric energy consumption
Hao, Dandan; Yang, Di; Liang, Haixia; Huang, Jia; Shan, Fukai
Sci China Inf Sci, 2024, 67(6): 162401
Keywords: photonic synaptic devices; lead-free perovskites; zero energy consumption; synaptic plasticity; Morse code
Cite as: Hao D D, Yang D, Liang H X, et al. Lead-free perovskites-based photonic synaptic devices with zero electric energy consumption. Sci China Inf Sci, 2024, 67(6): 162401, doi: 10.1007/s11432-023-3835-4

Special Topic: Silicon-compatible 2D Materials Technologies
RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar

Hole mobility enhancement in monolayer WSe2 p-type transistors through molecular doping
Liu S Y, Xiong X, Wang X, et al
Sci China Inf Sci, 2024, 67(6): 160406
Keywords: CVD-grown WSe2; molecular doping; 4-NBD; p-type transistors; hole mobility
Cite as: Liu S Y, Xiong X, Wang X, et al. Hole mobility enhancement in monolayer WSe2 p-type transistors through molecular doping. Sci China Inf Sci, 2024, 67(6): 160406, doi: 10.1007/s11432-024-4032-6

Special Topic: Silicon-compatible 2D Materials Technologies
RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors
Yang, Qiyu; Luo, Zheng-Dong; Xiao, Fei; Zhang, Junpeng; Zhang, Dawei; Tan, Dongxin; Gan, Xuetao; Liu, Yan; Chu, Zhufei; Xia, Yinshui; Han, Genquan
Sci China Inf Sci, 2024, 67(6): 160405
Keywords: vdW heterostructure; non-volatile memory; vertical-transport transistor; ferroelectric field-effect transistor; memristive devices
Cite as: Yang Q Y, Luo Z-D, Xiao F, et al. Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors. Sci China Inf Sci, 2024, 67(6): 160405, doi: 10.1007/s11432-024-4004-9

Special Topic: Silicon-compatible 2D Materials Technologies
RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Heterogeneous integration of 2D materials on Si charge-coupled devices as optical memory
Bian, Zheng; Tian, Feng; Li, Zongwen; Su, Xiangwei; Zhang, Tianjiao; Miao, Jialei; Yu, Bin; Xu, Yang; Zhao, Yuda
Sci China Inf Sci, 2024, 67(6): 160404
Keywords: heterogeneous integration; charge-coupled device; floating gate; optical memory; molybdenum disulfide; lightly doped silicon
Cite as: Bian Z, Tian F, Li Z W, et al. Heterogeneous integration of 2D materials on Si charge-coupled devices as optical memory. Sci China Inf Sci, 2024, 67(6): 160404, doi: 10.1007/s11432-024-3993-5

Special Topic: Silicon-compatible 2D Materials Technologies
RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Highly responsive broadband Si-based MoS2 phototransistor on high-k dielectric
Imran, Ali; He, Xin; Liu, Jiwei; Zhu, Qinghai; Sulaman, Muhammad; Xue, Fei; Xu, Mingsheng; Yang, Deren
Sci China Inf Sci, 2024, 67(6): 160403
Keywords: photogating; photoconduction; two-dimensional materials; high k dielectric; carrier scattering; phototransistor
Cite as: Imran A, He X, Liu J W, et al. Highly responsive broadband Si-based MoS2 phototransistor on high-k dielectric. Sci China Inf Sci, 2024, 67(6): 160403, doi: 10.1007/s11432-024-3994-4

Special Topic: Silicon-compatible 2D Materials Technologies
RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Contact engineering for temperature stability improvement of Bi-contacted MoS2 field effect transistors
Liu, Zizheng; Zhang, Qing; Huang, Xiaohe; Liu, Chunsen; Zhou, Peng
Sci China Inf Sci, 2024, 67(6): 160402
Keywords: temperature stability; semimetallic bismuth contact; semimetallic antimony contact; MoS2 FETs; time stability
Cite as: Liu Z Z, Zhang Q, Huang X H, et al. Contact engineering for temperature stability improvement of Bi-contacted MoS2 field effect transistors. Sci China Inf Sci, 2024, 67(6): 160402, doi: 10.1007/s11432-023-3942-2

Special Topic: Silicon-compatible 2D Materials Technologies
REVIEW Webpage Webpage-cn SpringerLink Google Scholar

Progress on the program of Si-compatible two-dimensional semiconductor materials and devices
Xu M S, Wang Y W, Liu J W, et al
Sci China Inf Sci, 2024, 67(6): 160401
Keywords: two-dimensional materials; Si-based CMOS technologies; electronics and optoelectronics; heterogeneous integration; low-power
Cite as: Xu M S, Wang Y W, Liu J W, et al. Progress on the program of Si-compatible two-dimensional semiconductor materials and devices. Sci China Inf Sci, 2024, 67(6): 160401, doi: 10.1007/s11432-024-3986-8

Special Topic: Silicon-compatible 2D Materials Technologies
REVIEW Webpage Webpage-cn SpringerLink Google Scholar

Two-dimensional materials for future information technology: status and prospects
Qiu H, Yu Z H, Zhao T G, et al
Sci China Inf Sci, 2024, 67(6): 160400
Keywords: two-dimensional materials; 2D materials; information technology; production technology; standardization of characterization; microelectronic devices; optoelectronic devices; multi-functional integration
Cite as: Qiu H, Yu Z H, Zhao T G, et al. Two-dimensional materials for future information technology: status and prospects. Sci China Inf Sci, 2024, 67(6): 160400, doi: 10.1007/s11432-024-4033-8

RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Stable α-CsPbI3 with extremely red emission for expanding the color gamut
Zhang, Yong; Wei, Xin; Gao, Lei; Zhao, Weijie; Sun, Changjiu; Wei, Junli; Yuan, Mingjian; Ni, Zhenhua; Lu, Junpeng; Liu, Hongwei
Sci China Inf Sci, 2024, 67(5): 152405
Keywords: all-inorganic perovskite; wide color gamut; LED; display; carrier recombination
Cite as: Zhang Y, Wei X, Gao L, et al. Stable α-CsPbI3 with extremely red emission for expanding the color gamut. Sci China Inf Sci, 2024, 67(5): 152405, doi: 10.1007/s11432-023-3944-3

RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Layer-by-layer epitaxy growth of thickness-controllable two-dimensional tungsten disulfide
Liang, Jieyuan; Zou, Zixing; Liang, Junwu; Wang, Di; Wang, Biao; Chu, Anshi; Yi, Jiali; Zhang, Cheng; Fang, Lizhen; Zhang, Tian; Liu, Huawei; Zhu, Xiaoli; Li, Dong; Pan, Anlian
Sci China Inf Sci, 2024, 67(5): 152404
Keywords: WS2; thickness-controlled growth; chemical vapor deposition; additive; carbon
Cite as: Liang J Y, Zou Z X, Liang J W, et al. Layer-by-layer epitaxy growth of thickness-controllable two-dimensional tungsten disulfide. Sci China Inf Sci, 2024, 67(5): 152404, doi: 10.1007/s11432-023-3941-4

REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Bioinspired sensing-memory-computing integrated vision systems: biomimetic mechanisms, design principles, and applications
Huang, Yujie; Tan, Yinlong; Kang, Yan; Chen, Yabo; Tang, Yuhua; Jiang, Tian
Sci China Inf Sci, 2024, 67(5): 151401
Keywords: sensing-memory-computing architecture; neuromorphic computing; retinomorphic device; image recognition; visual system
Cite as: Huang Y J, Tan Y L, Kang Y, et al. Bioinspired sensing-memory-computing integrated vision systems: biomimetic mechanisms, design principles, and applications. Sci China Inf Sci, 2024, 67(5): 151401, doi: 10.1007/s11432-023-3888-0

LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar

Gate regulated near-infrared photodetector utilizing interlayer excitons for MoS2/CrPS4 heterojunction
Xu G L, He C, Shi D H, et al
Sci China Inf Sci, 2024, 67(3): 139401
Keywords: heterostructure; two-dimensional materials; interlayer excitons; photodetector; gate tunable
Cite as: Xu G L, He C, Shi D H, et al. Gate regulated near-infrared photodetector utilizing interlayer excitons for MoS2/CrPS4 heterojunction. Sci China Inf Sci, 2024, 67(3): 139401, doi: 10.1007/s11432-023-3811-8

LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Polarity tunable complementary logic circuits
Pan, Chen; Shi, Jingwen; Wang, Pengfei; Wang, Shuang; Wang, Cong; Cheng, Bin; Liang, Shi-Jun; Miao, Feng
Sci China Inf Sci, 2023, 66(12): 229401
Keywords: splitting-gate WSe2 transistor; ambipolar; 2D materials-based electronics; logic circuit; polarity tunable complementary circuit
Cite as: Pan C, Shi J W, Wang P F, et al. Polarity tunable complementary logic circuits. Sci China Inf Sci, 2023, 66(12): 229401, doi: 10.1007/s11432-022-3621-0

Special Topic: Two-Dimensional Materials and Device Applications
RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Bolstering functionality in multilayer and bilayer WS2 via focused laser micro-engraving
Chan, Si Min; Poh, Eng Tuan; Leong, Jin Feng; Goh, Kuan Eng Johnson; Sow, Chorng Haur
Sci China Inf Sci, 2023, 66(6): 160409
Keywords: WS2 monolayer micro-patterning; focused laser; sonication lift-off
Cite as: Chan S M, Poh E T, Leong J F, et al. Bolstering functionality in multilayer and bilayer WS2 via focused laser micro-engraving. Sci China Inf Sci, 2023, 66(6): 160409, doi: 10.1007/s11432-023-3764-7

Special Topic: Two-Dimensional Materials and Device Applications
RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Growth of uniformly doped black phosphorus films through versatile atomic substitution
Chen, Cheng; Lu, Yang; Li, Chang; Hou, Xingang; Wang, Yongjie; Zhang, Junrong; Wang, Junyong; Zhang, Kai
Sci China Inf Sci, 2023, 66(6): 160407
Keywords: black phosphorus; dope; vapor growth; thin film; two-dimensional materials
Cite as: Chen C, Lu Y, Li C, et al. Growth of uniformly doped black phosphorus films through versatile atomic substitution. Sci China Inf Sci, 2023, 66(6): 160407, doi: 10.1007/s11432-023-3762-9

Special Topic: Two-Dimensional Materials and Device Applications
RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Selective enriching of trionic emission in a WS2-ZnO hybrid through type-II band alignment
Leong, Jin Feng; Lim, Kim Yong; Wu, Xiao; Xu, Qinghua; Sow, Chorng Haur; Poh, Eng Tuan
Sci China Inf Sci, 2023, 66(6): 160405
Keywords: heterostructure; trions; type-II band alignment
Cite as: Leong J F, Lim K Y, Wu X, et al. Selective enriching of trionic emission in a WS2-ZnO hybrid through type-II band alignment. Sci China Inf Sci, 2023, 66(6): 160405, doi: 10.1007/s11432-022-3719-4

电路和系统(24)

Special Focus on Brain Machine Interfaces and Applications
RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 7

A 124 dB dynamic range sigma-delta modulator applied to non-invasive EEG acquisition using chopper-modulated input-scaling-down technique
Chen, Kaiquan; Chen, Mingyi; Cheng, Longlong; Qi, Liang; Wang, Guoxing; Lian, Yong
Sci China Inf Sci, 2022, 65(4): 140402
Keywords: analog-to-digital converter; adc; σ∆ modulator; brain computer interface; bci; electroencephalogram; eeg; dynamic range; dr; motion artifacts; ma
Cite as: Chen K Q, Chen M Y, Cheng L L, et al. A 124 dB dynamic range sigma-delta modulator applied to non-invasive EEG acquisition using chopper-modulated input-scaling-down technique. Sci China Inf Sci, 2022, 65(4): 140402, doi: 10.1007/s11432-021-3401-6

LETTER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 6

Self-compensation tensor multiplication unit for adaptive approximate computing in low-power CNN processing
Liu, Bo; Zhang, Zilong; Cai, Hao; Zhang, Reyuan; Wang, Zhen; Yang, Jun
Sci China Inf Sci, 2022, 65(4): 149403
Keywords: approximate multiplication; tensor multiplication unit; convolutional neural network; self-compensation; addition tree
Cite as: Liu B, Zhang Z L, Cai H, et al. Self-compensation tensor multiplication unit for adaptive approximate computing in low-power CNN processing. Sci China Inf Sci, 2022, 65(4): 149403, doi: 10.1007/s11432-021-3242-6

Special Topic: Recent Progress of Fundamental Research on Post-Moore Novel Devices
REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

From macro to microarchitecture: reviews and trends of SRAM-based compute-in-memory circuits
Zhang, Zhaoyang; Chen, Jinwu; Chen, Xi; Guo, An; Wang, Bo; Xiong, Tianzhu; Kong, Yuyao; Pu, Xingyu; He, Shengnan; Si, Xin; Yang, Jun
Sci China Inf Sci, 2023, 66(10): 200403
Keywords: artificial intelligence; compute-in-memory; static random access memory
Cite as: Zhang Z Y, Chen J W, Chen X, et al. From macro to microarchitecture: reviews and trends of SRAM-based compute-in-memory circuits. Sci China Inf Sci, 2023, 66(10): 200403, doi: 10.1007/s11432-023-3800-9

RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

Reconfigurable spatial-parallel stochastic computing for accelerating sparse convolutional neural networks
Xia, Zihan; Wan, Rui; Chen, Jienan; Wang, Runsheng
Sci China Inf Sci, 2023, 66(6): 162404
Keywords: convolutional neural networks; stochastic computing; sparse neural networks; energy-efficient accelerator; high reconfigurability; spatial parallelism
Cite as: Xia Z H, Wan R, Chen J N, et al. Reconfigurable spatial-parallel stochastic computing for accelerating sparse convolutional neural networks. Sci China Inf Sci, 2023, 66(6): 162404, doi: 10.1007/s11432-021-3519-1

LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

An efficient path delay variability model for wide-voltage-range digital circuits
Shan, Weiwei; Cui, Yuqiang; Dai, Wentao; Liu, Xinning; Guo, Jingjing; Cao, Peng; Yang, Jun
Sci China Inf Sci, 2023, 66(2): 129401
Keywords: modeling; PVT variations; delay variability; digital integrated circuit; FO4 inverter chain
Cite as: Shan W W, Cui Y Q, Dai W T, et al. An efficient path delay variability model for wide-voltage-range digital circuits. Sci China Inf Sci, 2023, 66(2): 129401, doi: 10.1007/s11432-021-3407-2

LETTER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

A centripetal collection image sensor (CCIS) based on back gate modulation achieving 1T submicron pixel
Liu, Liqiao; Yu, Guihai; Du, Gang; Liu, Xiaoyan
Sci China Inf Sci, 2022, 65(4): 149401
Keywords: image sensor; submicron pixel; back gate modulation; pixel crosstalk; silicon on insulator
Cite as: Liu L Q, Yu G H, Du G, et al. A centripetal collection image sensor (CCIS) based on back gate modulation achieving 1T submicron pixel. Sci China Inf Sci, 2022, 65(4): 149401, doi: 10.1007/s11432-020-2933-y

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E-band transceiver monolithic microwave integrated circuit in a waveguide package for millimeter-wave radio channel emulation applications
Wang, Chen; Hou, Debin; Zheng, Sidou; Chen, Jixin; Zhang, Nianzu; Jiang, Zhengbo; Hong, Wei
Sci China Inf Sci, 2022, 65(2): 129404
Keywords: mmic; millimeter-wave; transceiver; microstrip-to-waveguide transition; e-band; radio channel emulator
Cite as: Wang C, Hou D B, Zheng S D, et al. E-band transceiver monolithic microwave integrated circuit in a waveguide package for millimeter-wave radio channel emulation applications. Sci China Inf Sci, 2022, 65(2): 129404, doi: 10.1007/s11432-020-3124-1

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A variable threshold visual sensing and image reconstruction method based on pulse sequence
Xu, Jiangtao; Lin, Peng; Gao, Zhiyuan; Nie, Kaiming; Xu, Liang
Sci China Inf Sci, 2022, 65(2): 129401
Keywords: pulse sequence; variable threshold; image reconstruction; visual sensing; adaptive video reconstruction
Cite as: Xu J T, Lin P, Gao Z Y, et al. A variable threshold visual sensing and image reconstruction method based on pulse sequence. Sci China Inf Sci, 2022, 65(2): 129401, doi: 10.1007/s11432-020-3003-2

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A neuromorphic core based on threshold switching memristor with asynchronous address event representation circuits
Wei, Jinsong; Zhang, Jilin; Zhang, Xumeng; Wu, Zuheng; Wang, Rui; Lu, Jian; Shi, Tuo; Chan, Mansun; Liu, Qi; Chen, Hong
Sci China Inf Sci, 2022, 65(2): 122408
Keywords: leaky-integration-and-fire; lif; memristor; threshold switching; artificial neuron; aer circuits; asynchronous circuits; on-chip communication
Cite as: Wei J S, Zhang J L, Zhang X M, et al. A neuromorphic core based on threshold switching memristor with asynchronous address event representation circuits. Sci China Inf Sci, 2022, 65(2): 122408, doi: 10.1007/s11432-020-3203-0

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Keywords: low-noise amplifier; D-band; SiGe; gain-noise plane; collaborative optimization
Cite as: Xu Z C, Ni M H, Xie Q, et al. Collaborative gain and noise optimization: a design of 150-173-GHz cascode LNA with 22.3 dB gain and 6.92 dB NF based on the gain-noise plane. Sci China Inf Sci, 2023, 66(10): 209401, doi: 10.1007/s11432-022-3622-1

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A 70%-power transmission efficiency, 3.39 Mbps power and data telemetry over a single 13.56 MHz inductive link for biomedical implants
Chen, Mingyi; Pan, Luominghao; Lin, Qiuyang; Cheng, Longlong; Ming, Dong
Sci China Inf Sci, 2023, 66(2): 122406
Keywords: power and data telemetry; inductive link; implantable medical device; brain-computer interface; phase-locked-loop; binary-phase-shift keying; power transfer efficiency
Cite as: Chen M Y, Pan L M H, Lin Q Y, et al. A 70%-power transmission efficiency, 3.39 Mbps power and data telemetry over a single 13.56 MHz inductive link for biomedical implants. Sci China Inf Sci, 2023, 66(2): 122406, doi: 10.1007/s11432-022-3563-9

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SEU sensitivity and large spacing TMR efficiency of Kintex-7 and Virtex-7 FPGAs
Cai, Chang; Ning, Bingxu; Fan, Xue; Liu, Tianqi; Ke, Lingyun; Chen, Gengsheng; Yu, Jian; He, Ze; Xu, Liewei; Liu, Jie
Sci China Inf Sci, 2022, 65(2): 129402
Keywords: microelectronics; radiation effects; space electronics; radiation tolerance; fpga; reliability
Cite as: Cai C, Ning B X, Fan X, et al. SEU sensitivity and large spacing TMR efficiency of Kintex-7 and Virtex-7 FPGAs. Sci China Inf Sci, 2022, 65(2): 129402, doi: 10.1007/s11432-020-3169-x

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CATCAM: a 28 nm constant-time alteration TCAM enabling less than 50 ns update latency
Deng, Chenchen; Xiong, Tianzhu; Li, Zhaoshi; Liu, Zhiwei; Wang, Yao; Zhu, Jianfeng; Yang, Jun; Wei, Shaojun; Liu, Leibo
Sci China Inf Sci, 2024, 67(4): 149403
Keywords: Computing-in-memory; CIM; ternary contentaddressable memory; TCAM; rule update; SRAM; SDN
Cite as: Deng C C, Xiong T Z, Li Z S, et al. CATCAM: a 28 nm constant-time alteration TCAM enabling less than 50 ns update latency. Sci China Inf Sci, 2024, 67(4): 149403, doi: 10.1007/s11432-023-3964-4

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An analysis of TinyML@ICCAD for implementing AI on low-power microprocessor
Li, Guoqing; Zhang, Jingwei; Zhang, Meng; Li, Tuo; Chen, Tinghuan; Yang, Jun
Sci China Inf Sci, 2024, 67(4): 149402
Keywords: Low-end microprocessor; Tiny machine learning; Artificial intelligence; Benchmark; Ventricular arrhythmia detection
Cite as: Li G Q, Zhang J W, Zhang M, et al. An analysis of TinyML@ICCAD for implementing AI on low-power microprocessor. Sci China Inf Sci, 2024, 67(4): 149402, doi: 10.1007/s11432-023-3934-y

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Post-layout simulation driven analog circuit sizing
Gao, Xiaohan; Zhang, Haoyi; Ye, Siyuan; Liu, Mingjie; Pan, David Z.; Shen, Linxiao; Wang, Runsheng; Lin, Yibo; Huang, Ru
Sci China Inf Sci, 2024, 67(4): 142401
Keywords: analog EDA; transistor sizing; Bayesian optimization; post-layout simulation
Cite as: Gao X H, Zhang H Y, Ye S Y, et al. Post-layout simulation driven analog circuit sizing. Sci China Inf Sci, 2024, 67(4): 142401, doi: 10.1007/s11432-022-3878-5

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SWG: an architecture for sparse weight gradient computation
Wu, Weiwei; Tu, Fengbin; Li, Xiangyu; Wei, Shaojun; Yin, Shouyi
Sci China Inf Sci, 2024, 67(2): 122405
Keywords: CNN; training; gradient computation; sparsity; architecture
Cite as: Wu W W, Tu F B, Li X Y, et al. SWG: an architecture for sparse weight gradient computation. Sci China Inf Sci, 2024, 67(2): 122405, doi: 10.1007/s11432-022-3807-9

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FSS: algorithm and neural network accelerator for style transfer
Ling, Yi; Huang, Yujie; Cai, Yujie; Li, Zhaojie; Wang, Mingyu; Li, Wenhong; Zeng, Xiaoyang
Sci China Inf Sci, 2024, 67(2): 122401
Keywords: neural network accelerator; style transfer; neural network; deep learning
Cite as: Ling Y, Huang Y J, Cai Y J, et al. FSS: algorithm and neural network accelerator for style transfer. Sci China Inf Sci, 2024, 67(2): 122401, doi: 10.1007/s11432-022-3676-2

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A Ku-band image-rejection filtering LNA MMIC in 150-nm GaN-on-SiC technology
Li, Huiyang; Xu, Jinxu; Zhang, Xiuyin
Sci China Inf Sci, 2024, 67(1): 119404
Keywords: low noise amplifier; LNA; MMIC; 150-nm GaN-on-SiC; image rejection; Ku-band
Cite as: Li H Y, Xu J X, Zhang X Y. A Ku-band image-rejection filtering LNA MMIC in 150-nm GaN-on-SiC technology. Sci China Inf Sci, 2024, 67(1): 119404, doi: 10.1007/s11432-023-3849-x

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A reconfigurable Wilkinson power divider based on transmission-line phase shifter for 5G new radio
Yu, Yiming; Zhang, Xiaoning; Zhao, Chenxi; Liu, Huihua; Wu, Yunqiu; Kang, Kai
Sci China Inf Sci, 2023, 66(12): 229407
Keywords: CMOS; 5G; multi-band; reconfigurable; phase shifter; transmission line; Wilkinson power divider; new radio
Cite as: Yu Y M, Zhang X N, Zhao C X, et al. A reconfigurable Wilkinson power divider based on transmission-line phase shifter for 5G new radio. Sci China Inf Sci, 2023, 66(12): 229407, doi: 10.1007/s11432-022-3827-4

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Low-cost real-time VLSI system for high-accuracy optical flow estimation using biological motion features and random forests
Shi, Cong; He, Junxian; Pundlik, Shrinivas; Zhou, Xichuan; Wu, Nanjian; Luo, Gang
Sci China Inf Sci, 2023, 66(5): 159401
Keywords: motion estimation; optical flow; motion energy; hardware Random Forests; VLSI hardware system
Cite as: Shi C, He J X, Pundlik S, et al. Low-cost real-time VLSI system for high-accuracy optical flow estimation using biological motion features and random forests. Sci China Inf Sci, 2023, 66(5): 159401, doi: 10.1007/s11432-021-3473-1

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A Ka-band calibratable phased-array front-end chip with high element-consistency
Sun, Shiyan; Li, An'an; Ding, Yingtao; Chen, Zipeng; Wang, Wei; Jiang, Sijia; Chen, Zhiming; Chi, Baoyong
Sci China Inf Sci, 2022, 65(12): 229401
Keywords: Phased-array; phase shifter; attenuator; power amplifier; CMOS; transmit front-end module
Cite as: Sun S Y, Li A A, Ding Y T, et al. A Ka-band calibratable phased-array front-end chip with high element-consistency. Sci China Inf Sci, 2022, 65(12): 229401, doi: 10.1007/s11432-020-3376-7

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High efficiency dual-band filtering power amplifier
Li, Yuanchun; Wang, Yuanbo; Wu, Disi; Zhan, Runze; Chen, Shichang; Xue, Quan
Sci China Inf Sci, 2022, 65(8): 189401
Keywords: dual-band; filtering; high efficiency; power amplifier; pa; power added efficiency; pae
Cite as: Li Y C, Wang Y B, Wu D S, et al. High efficiency dual-band filtering power amplifier. Sci China Inf Sci, 2022, 65(8): 189401, doi: 10.1007/s11432-021-3315-y

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An energy-efficient dynamically reconfigurable cryptographic engine with improved power/EM-side-channel-attack resistance
Deng, Chenchen; Zhu, Min; Yang, Jinjiang; Wu, Youyu; He, Jiaji; Yang, Bohan; Zhu, Jianfeng; Yin, Shouyi; Wei, Shaojun; Liu, Leibo
Sci China Inf Sci, 2022, 65(4): 149404
Keywords: reconfigurable architectures; energy efficiency; cryptographic accelerator; flexibility; side channel analysis
Cite as: Deng C C, Zhu M, Yang J J, et al. An energy-efficient dynamically reconfigurable cryptographic engine with improved power/EM-side-channel-attack resistance. Sci China Inf Sci, 2022, 65(4): 149404, doi: 10.1007/s11432-020-3206-2

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A SiGe W-band frequency tripler with 10.5 dBm output power using harmonic suppression technique
Li, Huanbo; Chen, Jixin; Zhou, Peigen; Hou, Debin; Hong, Wei
Sci China Inf Sci, 2022, 65(4): 149402
Keywords: sige; w-band; frequency triper; harmonic suppression; transforming
Cite as: Li H B, Chen J X, Zhou P G, et al. A SiGe W-band frequency tripler with 10.5 dBm output power using harmonic suppression technique. Sci China Inf Sci, 2022, 65(4): 149402, doi: 10.1007/s11432-020-3041-5

MEMS(15)

Special Focus on Brain Machine Interfaces and Applications
RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 31

Hybrid spiking neural network for sleep electroencephalogram signals
Jia, Ziyu; Ji, Junyu; Zhou, Xinliang; Zhou, Yuhan
Sci China Inf Sci, 2022, 65(4): 140403
Keywords: spiking neural network; electroencephalogram signals; sleep staging
Cite as: Jia Z Y, Ji J Y, Zhou X L, et al. Hybrid spiking neural network for sleep electroencephalogram signals. Sci China Inf Sci, 2022, 65(4): 140403, doi: 10.1007/s11432-021-3380-1

RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 18

A high-efficient triboelectric-electromagnetic hybrid nanogenerator for vibration energy harvesting and wireless monitoring
He, Jian; Fan, Xueming; Zhao, Dongyang; Cui, Min; Han, Bing; Hou, Xiaojuan; Chou, Xiujian
Sci China Inf Sci, 2022, 65(4): 142401
Keywords: mechanical vibration energy; spring structure; triboelectric; electromagnetic; wireless monitoring system
Cite as: He J, Fan X M, Zhao D Y, et al. A high-efficient triboelectric-electromagnetic hybrid nanogenerator for vibration energy harvesting and wireless monitoring. Sci China Inf Sci, 2022, 65(4): 142401, doi: 10.1007/s11432-020-3081-4

Highly Cited in 202401 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 13

Hybrid electromechanical properties of hetero-doped and homogeneously bonded dual-mode pressure sensor for indoor body area network node
Yu, Junbin; Xian, Shuai; Mu, Jinbiao; Wang, Min; Wang, Yin; Hou, Xiaojuan; Zhang, Le; He, Jian; Mu, Jiliang; Chou, Xiujian
Sci China Inf Sci, 2024, 67(1): 112401
Keywords: dual-mode pressure sensor; homogeneous bonding; all-in-one structure; indoor body area network node; elderly caregiving microsystem
Cite as: Yu J B, Xian S, Mu J B, et al. Hybrid electromechanical properties of hetero-doped and homogeneously bonded dual-mode pressure sensor for indoor body area network node. Sci China Inf Sci, 2024, 67(1): 112401, doi: 10.1007/s11432-023-3801-1

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A non-contact flexible pyroelectric sensor for wireless physiological monitoring system
He, Jian; Li, Sen; Hou, Xiaojuan; Zhou, Yongjun; Li, Hao; Cui, Min; Guo, Tao; Wang, Xiangdong; Mu, Jiliang; Geng, Wenping; Chou, Xiujian
Sci China Inf Sci, 2022, 65(2): 122402
Keywords: non-contact; pyroelectric generator; human body heat; environmental thermal energy; wireless monitoring system
Cite as: He J, Li S, Hou X J, et al. A non-contact flexible pyroelectric sensor for wireless physiological monitoring system. Sci China Inf Sci, 2022, 65(2): 122402, doi: 10.1007/s11432-020-3175-6

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Mode-localized accelerometer with ultrahigh sensitivity
Kang, Hao; Ruan, Bing; Hao, Yongcun; Chang, Honglong
Sci China Inf Sci, 2022, 65(4): 142402
Keywords: mode localization; weakly coupled resonators; accelerometer; degree-of-freedom; microelectromechanical system
Cite as: Kang H, Ruan B, Hao Y C, et al. Mode-localized accelerometer with ultrahigh sensitivity. Sci China Inf Sci, 2022, 65(4): 142402, doi: 10.1007/s11432-020-3057-y

Special Focus on Brain Machine Interfaces and Applications
REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 10

Recent advances in wireless epicortical and intracortical neuronal recording systems
Ji, Bowen; Liang, Zekai; Yuan, Xichen; Xu, Honglai; Wang, Minghao; Yin, Erwei; Guo, Zhejun; Wang, Longchun; Zhou, Yuhao; Feng, Huicheng; Chang, Honglong; Liu, Jingquan
Sci China Inf Sci, 2022, 65(4): 140401
Keywords: wireless implant; neuronal recording system; recording electrodes; processing chips; wireless data transmission; power supply; system-level package
Cite as: Ji B W, Liang Z K, Yuan X C, et al. Recent advances in wireless epicortical and intracortical neuronal recording systems. Sci China Inf Sci, 2022, 65(4): 140401, doi: 10.1007/s11432-021-3373-1

Special Focus on Brain Machine Interfaces and Applications
RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 9

SSVEP-based brain-computer interfaces are vulnerable to square wave attacks
Bian, Rui; Meng, Lubin; Wu, Dongrui
Sci China Inf Sci, 2022, 65(4): 140406
Keywords: electroencephalogram; brain-computer interface; steady-state visual evoked potential; adversarial attack
Cite as: Bian R, Meng L B, Wu D R. SSVEP-based brain-computer interfaces are vulnerable to square wave attacks. Sci China Inf Sci, 2022, 65(4): 140406, doi: 10.1007/s11432-022-3440-5

Special Focus on Brain Machine Interfaces and Applications
RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 7

Multi-channel EEG-based emotion recognition in the presence of noisy labels
Li, Chang; Hou, Yimeng; Song, Rencheng; Cheng, Juan; Liu, Yu; Chen, Xun
Sci China Inf Sci, 2022, 65(4): 140405
Keywords: electroencephalogram; eeg; emotion recognition; noisy labels; capsule network; joint optimization
Cite as: Li C, Hou Y M, Song R C, et al. Multi-channel EEG-based emotion recognition in the presence of noisy labels. Sci China Inf Sci, 2022, 65(4): 140405, doi: 10.1007/s11432-021-3439-2

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Active poisoning: efficient backdoor attacks on transfer learning-based brain-computer interfaces
Jiang, Xue; Meng, Lubin; Li, Siyang; Wu, Dongrui
Sci China Inf Sci, 2023, 66(8): 182402
Keywords: brain-computer interface; electroencephalogram; transfer learning; poisoning attack; backdoor attack
Cite as: Jiang X, Meng L B, Li S Y, et al. Active poisoning: efficient backdoor attacks on transfer learning-based brain-computer interfaces. Sci China Inf Sci, 2023, 66(8): 182402, doi: 10.1007/s11432-022-3548-2

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Recent progress in single crystal perovskite X-ray detectors
Liu, Xiao; Ren, Jun; Chen, Yu-Ang; Geng, Xiangshun; Xie, Dan; Ren, Tian-Ling
Sci China Inf Sci, 2024, 67(3): 131401
Keywords: single crystal perovskites; carrier transport; radiation detection; X-ray detectors; X-ray imaging
Cite as: Liu X, Ren J, Chen Y-A, et al. Recent progress in single crystal perovskite X-ray detectors. Sci China Inf Sci, 2024, 67(3): 131401, doi: 10.1007/s11432-023-3856-4

Special Focus on Brain Machine Interfaces and Applications
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Amplitude-frequency-aware deep fusion network for optimal contact selection on STN-DBS electrodes
Xiao, Linxia; Li, Caizi; Wang, Yanjiang; Si, Weixin; Lin, Hai; Zhang, Doudou; Cai, Xiaodong; Heng, Pheng-Ann
Sci China Inf Sci, 2022, 65(4): 140404
Keywords: optimal contact selection; sweet spots; microelectrode recordings; amplitude-frequency feature; deep fusion network
Cite as: Xiao L X, Li C Z, Wang Y J, et al. Amplitude-frequency-aware deep fusion network for optimal contact selection on STN-DBS electrodes. Sci China Inf Sci, 2022, 65(4): 140404, doi: 10.1007/s11432-021-3392-1

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A high precision two-axis GMR angular sensor manufactured by post-annealing
Zhou, Zitong; Cao, Zhiqiang; Yan, Shaohua; Wang, Xiaolong; Xie, Libo; Lu, Shiyang; Zhu, Dapeng; Leng, Qunwen; Zhao, Weisheng
Sci China Inf Sci, 2024, 67(6): 169405
Keywords: giant magnetoresistance effect; magnetic angle detection; in-plane two-axis magnetic sensors; post-annealing; pinned direction; high precision
Cite as: Zhou Z T, Cao Z Q, Yan S H, et al. A high precision two-axis GMR angular sensor manufactured by post-annealing. Sci China Inf Sci, 2024, 67(6): 169405, doi: 10.1007/s11432-024-4020-y

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Keywords: convolutional sparse coding; prototypical waveforms; state-specific dictionary; biomarker identification; neural signal processing
Cite as: Wang P L, Qi Y, Pan G. State-sensitive convolutional sparse coding for potential biomarker identification in brain signals. Sci China Inf Sci, 2024, 67(5): 152401, doi: 10.1007/s11432-023-3876-1

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Proximity-induced magnetic order in topological insulator on ferromagnetic semiconductor
Wang, Hangtian; Murata, Koichi; Xie, Weiran; Li, Jing; Zhang, Jie; Wang, Kang L.; Zhao, Weisheng; Nie, Tianxiao
Sci China Inf Sci, 2023, 66(12): 222403
Keywords: topological insulator; ferromagnetic semiconductor; proximity effect; quantum interference
Cite as: Wang H T, Murata K, Xie W R, et al. Proximity-induced magnetic order in topological insulator on ferromagnetic semiconductor. Sci China Inf Sci, 2023, 66(12): 222403, doi: 10.1007/s11432-023-3841-9

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Magnetic coupling governed pinning directions in magnetic tunnel junctions under magnetic field annealing with zero magnetic field cooling
Chen, Weibin; Yan, Shaohua; Cao, Zhiqiang; Lu, Shiyang; Zhao, Xiaonan; Hao, Runrun; Zhou, Zitong; Li, Zhi; Zhang, Kun; Yan, Shishen; Leng, Qunwen
Sci China Inf Sci, 2023, 66(4): 149402
Keywords: exchange bias; magnetic tunnel junctions; Wheatstone bridge; tunnel magnetoresistance; magnetic field annealing with zero magnetic field cooling
Cite as: Chen W B, Yan S H, Cao Z Q, et al. Magnetic coupling governed pinning directions in magnetic tunnel junctions under magnetic field annealing with zero magnetic field cooling. Sci China Inf Sci, 2023, 66(4): 149402, doi: 10.1007/s11432-021-3467-5

新器件(77)

REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 36

Neuromorphic sensory computing
Wan, Tianqing; Ma, Sijie; Liao, Fuyou; Fan, Lingwei; Chai, Yang
Sci China Inf Sci, 2022, 65(4): 141401
Keywords: neuromorphic; sensory computing; multimodal sensory computing; electronic sensory computing; optical sensory computing
Cite as: Wan T Q, Ma S J, Liao F Y, et al. Neuromorphic sensory computing. Sci China Inf Sci, 2022, 65(4): 141401, doi: 10.1007/s11432-021-3336-8

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Stateful implication logic based on perpendicular magnetic tunnel junctions
Cai, Wenlong; Wang, Mengxing; Cao, Kaihua; Yang, Huaiwen; Peng, Shouzhong; Li, Huisong; Zhao, Weisheng
Sci China Inf Sci, 2022, 65(2): 122406
Keywords: perpendicular magnetic anisotropy magnetic tunnel junction; implication; spin transfer torque; spintronic implication logic gate; processing-in-memory
Cite as: Cai W L, Wang M X, Cao K H, et al. Stateful implication logic based on perpendicular magnetic tunnel junctions. Sci China Inf Sci, 2022, 65(2): 122406, doi: 10.1007/s11432-020-3189-x

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Boosted high-temperature electrical characteristics of AlGaN/GaN HEMTs with rationally designed compositionally graded AlGaN back barriers
Zhang, Haochen; Sun, Yue; Hu, Kunpeng; Yang, Lei; Liang, Kun; Xing, Zhanyong; Wang, Hu; Zhang, Mingshuo; Yu, Huabin; Fang, Shi; Kang, Yang; Sun, Haiding
Sci China Inf Sci, 2023, 66(8): 182405
Keywords: AlGaN/GaN HEMT; graded AlGaN back barrier; SiNx passivation; DHHEMT; high temperature stability
Cite as: Zhang H C, Sun Y, Hu K P, et al. Boosted high-temperature electrical characteristics of AlGaN/GaN HEMTs with rationally designed compositionally graded AlGaN back barriers. Sci China Inf Sci, 2023, 66(8): 182405, doi: 10.1007/s11432-022-3694-4

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IGZO-based neuromorphic transistors with temperature-dependent synaptic plasticity and spiking logics
Zhu, Ying; He, Yongli; Chen, Chunsheng; Zhu, Li; Wan, Changjin; Wan, Qing
Sci China Inf Sci, 2022, 65(6): 162401
Keywords: neuromorphic transistors; igzo tfts; temperature-dependent synaptic plasticity; logic transformation
Cite as: Zhu Y, He Y L, Chen C S, et al. IGZO-based neuromorphic transistors with temperature-dependent synaptic plasticity and spiking logics. Sci China Inf Sci, 2022, 65(6): 162401, doi: 10.1007/s11432-021-3326-6

RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 8

An ultra-high-density and energy-efficient content addressable memory design based on 3D-NAND flash
Yang, Haozhang; Huang, Peng; Han, Runze; Liu, Xiaoyan; Kang, Jinfeng
Sci China Inf Sci, 2023, 66(4): 142402
Keywords: content addressable memory; CAM; 3D-NAND flash; data-intensive computing; in-memory computing; multilevel CAM
Cite as: Yang H Z, Huang P, Han R Z, et al. An ultra-high-density and energy-efficient content addressable memory design based on 3D-NAND flash. Sci China Inf Sci, 2023, 66(4): 142402, doi: 10.1007/s11432-021-3502-4

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Perpendicular magnetic anisotropy based spintronics devices in Pt/Co stacks under different hard and flexible substrates
Eimer, Sylvain; Cheng, Houyi; Li, Jinji; Zhang, Xueying; Zhao, Chao; Zhao, Weisheng
Sci China Inf Sci, 2023, 66(2): 122408
Keywords: Pt/Co stacks; perpendicular magnetic anisotropy; magnetodynamic behavior; spintronics flexible devices; high temperature deposition
Cite as: Eimer S, Cheng H Y, Li J J, et al. Perpendicular magnetic anisotropy based spintronics devices in Pt/Co stacks under different hard and flexible substrates. Sci China Inf Sci, 2023, 66(2): 122408, doi: 10.1007/s11432-021-3371-4

NEWS & VIEWS Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 7

CircuitNet: an open-source dataset for machine learning applications in electronic design automation (EDA)
Chai, Zhuomin; Zhao, Yuxiang; Lin, Yibo; Liu, Wei; Wang, Runsheng; Huang, Ru
Sci China Inf Sci, 2022, 65(12): 227401
Keywords: EDA; VLSI CAD; Physical Design; Machine Learning; Routability; IR Drop
Cite as: Chai Z M, Zhao Y X, Lin Y B, et al. CircuitNet: an open-source dataset for machine learning applications in electronic design automation (EDA). Sci China Inf Sci, 2022, 65(12): 227401, doi: 10.1007/s11432-022-3571-8

RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 7

Physical investigation of subthreshold swing degradation behavior in negative capacitance FET
Yang, Mengxuan; Huang, Qianqian; Wang, Kaifeng; Su, Chang; Chen, Liang; Wang, Yangyuan; Huang, Ru
Sci China Inf Sci, 2022, 65(6): 162404
Keywords: ferroelectric; negative differential capacitance effect; polarization; low power; voltage amplification
Cite as: Yang M X, Huang Q Q, Wang K F, et al. Physical investigation of subthreshold swing degradation behavior in negative capacitance FET. Sci China Inf Sci, 2022, 65(6): 162404, doi: 10.1007/s11432-021-3283-5

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NAND-SPIN-based processing-in-MRAM architecture for convolutional neural network acceleration
Zhao, Yinglin; Yang, Jianlei; Li, Bing; Cheng, Xingzhou; Ye, Xucheng; Wang, Xueyan; Jia, Xiaotao; Wang, Zhaohao; Zhang, Youguang; Zhao, Weisheng
Sci China Inf Sci, 2023, 66(4): 142401
Keywords: processing-in-memory; convolutional neural network; NAND-like spintronics memory; non- volatile memory; magnetic tunnel junction
Cite as: Zhao Y L, Yang J L, Li B, et al. NAND-SPIN-based processing-in-MRAM architecture for convolutional neural network acceleration. Sci China Inf Sci, 2023, 66(4): 142401, doi: 10.1007/s11432-021-3472-9

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Reconfigurable physical unclonable cryptographic primitives based on current-induced nanomagnets switching
Zhang, Shuai; Zhang, Jian; Li, Shihao; Wang, Yaoyuan; Chen, Zhenjiang; Hong, Jeongmin; You, Long
Sci China Inf Sci, 2022, 65(2): 122405
Keywords: reconfigurable physical unclonable function; spin-orbit torque; cryptographic primitive; spintronics; nanomagnet
Cite as: Zhang S, Zhang J, Li S H, et al. Reconfigurable physical unclonable cryptographic primitives based on current-induced nanomagnets switching. Sci China Inf Sci, 2022, 65(2): 122405, doi: 10.1007/s11432-021-3270-8

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Low-time-complexity document clustering using memristive dot product engine
Zhou, Houji; Li, Yi; Miao, Xiangshui
Sci China Inf Sci, 2022, 65(2): 122410
Keywords: linear-time clustering; cosine similarity; spherical k-means; memristor; in-memory computing
Cite as: Zhou H J, Li Y, Miao X S. Low-time-complexity document clustering using memristive dot product engine. Sci China Inf Sci, 2022, 65(2): 122410, doi: 10.1007/s11432-021-3316-x

Special Topic: Recent Progress of Fundamental Research on Post-Moore Novel Devices
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Memristive dynamics enabled neuromorphic computing systems
Yan, Bonan; Yang, Yuchao; Huang, Ru
Sci China Inf Sci, 2023, 66(10): 200401
Keywords: memrsitor; memristive dynamics; artificial synapse; artificial neuron; neuromorphic computing
Cite as: Yan B N, Yang Y C, Huang R. Memristive dynamics enabled neuromorphic computing systems. Sci China Inf Sci, 2023, 66(10): 200401, doi: 10.1007/s11432-023-3739-0

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Freely switching between ferroelectric and resistive switching in Hf 0.5Zr0.5O2 films and its application on high accuracy on-chip deep neural networks
Jiang, Pengfei; Xu, Kunran; Yu, Jie; Xu, Yannan; Yuan, Peng; Wang, Yuan; Chen, Yuting; Ding, Yaxin; Lv, Shuxian; Dang, Zhiwei; Gong, Tiancheng; Yang, Yang; Wang, Yan; Luo, Qing
Sci China Inf Sci, 2023, 66(2): 122409
Keywords: Hf0.5Zr0.5O2 films; ferroelectric; resistive switching; accuracy; on-chip DNN
Cite as: Jiang P F, Xu K R, Yu J, et al. Freely switching between ferroelectric and resistive switching in Hf 0.5Zr0.5O2 films and its application on high accuracy on-chip deep neural networks. Sci China Inf Sci, 2023, 66(2): 122409, doi: 10.1007/s11432-022-3508-7

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Associative learning of a three-terminal memristor network for digits recognition
Ren, Yiming; Tian, Bobo; Yan, Mengge; Feng, Guangdi; Gao, Bin; Yue, Fangyu; Peng, Hui; Tang, Xiaodong; Zhu, Qiuxiang; Chu, Junhao; Duan, Chungang
Sci China Inf Sci, 2023, 66(2): 122403
Keywords: artificial intelligence; associative learning; memristor; classification network
Cite as: Ren Y M, Tian B B, Yan M G, et al. Associative learning of a three-terminal memristor network for digits recognition. Sci China Inf Sci, 2023, 66(2): 122403, doi: 10.1007/s11432-022-3503-4

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Novel SiC SBD-wall-integrated trench MOSFET with a semi-superjunction and split trench gate
Luo, Xiaorong; Huang, Junyue; Song, Xu; Jiang, Qinfeng; Wei, Jie; Fang, Jian; Yang, Fei
Sci China Inf Sci, 2022, 65(6): 169404
Keywords: SiC; MOSFET; Schottky barrier diode; semi-superjunction; split trench gate; reverse turn-on voltage
Cite as: Luo X R, Huang J Y, Song X, et al. Novel SiC SBD-wall-integrated trench MOSFET with a semi-superjunction and split trench gate. Sci China Inf Sci, 2022, 65(6): 169404, doi: 10.1007/s11432-021-3324-0

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Experimental investigation of the gate voltage range of negative differential capacitance in ferroelectric transistors
YANG, Mengxuan; HUANG, Qianqian; SU, Chang; CHEN, Liang; WANG, Yangyuan; HUANG, Ru
Sci China Inf Sci, 2022, 65(6): 169402
Keywords: Ferroelectric; Negative differential capacitance effect; Polarization; Low power; Subthreshold swing
Cite as: Yang M X, Huang Q Q, Su C, et al. Experimental investigation of the gate voltage range of negative differential capacitance in ferroelectric transistors. Sci China Inf Sci, 2022, 65(6): 169402, doi: 10.1007/s11432-021-3268-0

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CMOS-compatible retinomorphic Si photodetector for motion detection
Wu, Yi; Deng, Wenjie; Chen, Xiaoqing; Li, Jingjie; Li, Songyu; Zhang, Yongzhe
Sci China Inf Sci, 2023, 66(6): 162401
Keywords: retina; photodetector; motion detection; bio-inspired; in-sensor computing
Cite as: Wu Y, Deng W J, Chen X Q, et al. CMOS-compatible retinomorphic Si photodetector for motion detection. Sci China Inf Sci, 2023, 66(6): 162401, doi: 10.1007/s11432-022-3591-5

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Total ionizing dose effects on aluminum oxide/ zirconium-doped hafnium oxide stack ferroelectric tunneling junctions
Yang, Xueqin; Xu, Yannan; Bi, Jinshun; Xi, Kai; Fan, Linjie; Ji, Lanlong; Xu, Gaobo
Sci China Inf Sci, 2022, 65(6): 169403
Keywords: HfO2; ferroelectric tunneling junctions; dielectric; total ionizing dose; gamma-ray radiation
Cite as: Yang X Q, Xu Y N, Bi J S, et al. Total ionizing dose effects on aluminum oxide/ zirconium-doped hafnium oxide stack ferroelectric tunneling junctions. Sci China Inf Sci, 2022, 65(6): 169403, doi: 10.1007/s11432-021-3269-4

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Conversion of a single-layer ANN to photonic SNN for pattern recognition
Han, Yanan; Xiang, Shuiying; Zhang, Tianrui; Zhang, Yahui; Guo, Xingxing; Shi, Yuechun
Sci China Inf Sci, 2024, 67(1): 112403
Keywords: photonic SNN; conversion; optical computing; pattern recognition; artificial neural network
Cite as: Han Y N, Xiang S Y, Zhang T R, et al. Conversion of a single-layer ANN to photonic SNN for pattern recognition. Sci China Inf Sci, 2024, 67(1): 112403, doi: 10.1007/s11432-022-3699-2

Special Topic: Recent Progress of Fundamental Research on Post-Moore Novel Devices
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Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications
Zhang, Zhaohao; Tian, Guoliang; Huo, Jiali; Zhang, Fang; Zhang, Qingzhu; Xu, Gaobo; Wu, Zhenhua; Cheng, Yan; Liu, Yan; Yin, Huaxiang
Sci China Inf Sci, 2023, 66(10): 200405
Keywords: ferroelectric; FeFET; hafnium oxide; HZO; logic-in-memory; neuromorphic computing
Cite as: Zhang Z H, Tian G L, Huo J L, et al. Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications. Sci China Inf Sci, 2023, 66(10): 200405, doi: 10.1007/s11432-023-3780-7

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All-van der Waals stacking ferroelectric field-effect transistor based on In2Se3 for high-density memory
Wang, Xiaojie; Feng, Zeyang; Cai, Jingwei; Tong, Hao; Miao, Xiangshui
Sci China Inf Sci, 2023, 66(8): 182401
Keywords: high-density memory; ferroelectric field-effect transistors; two-dimensional ferroelectrics; van der Waals; In2Se3
Cite as: Wang X J, Feng Z Y, Cai J W, et al. All-van der Waals stacking ferroelectric field-effect transistor based on In2Se3 for high-density memory. Sci China Inf Sci, 2023, 66(8): 182401, doi: 10.1007/s11432-022-3617-2

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Experimental investigation of a novel junction-modulated hetero-layer tunnel FET with the striped gate for low power applications
Liang, Zhongxin; Zhao, Yang; Wang, Kaifeng; Zhang, Jieyin; Zhang, Jianjun; Li, Ming; Huang, Ru; Huang, Qianqian
Sci China Inf Sci, 2023, 66(6): 169406
Keywords: subthreshold swing; steep-slope; tunnel field-effect transistor; band-to-band tunneling; junction depleted-modulation; adaptive bandgap engineering
Cite as: Liang Z X, Zhao Y, Wang K F, et al. Experimental investigation of a novel junction-modulated hetero-layer tunnel FET with the striped gate for low power applications. Sci China Inf Sci, 2023, 66(6): 169406, doi: 10.1007/s11432-022-3500-6

Special Topic: Two-Dimensional Materials and Device Applications
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Keywords: negative quantum capacitance; molybdenum disulfide; field-effect transistor; subthreshold swing; ultra-low power device
Cite as: Chen L, Wang H M, Huang Q Q, et al. A novel negative quantum capacitance field-effect transistor with molybdenum disulfide integrated gate stack and steep subthreshold swing for ultra-low power applications. Sci China Inf Sci, 2023, 66(6): 160406, doi: 10.1007/s11432-023-3763-3

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Hf0.5Zr0.5O2 1T–1C FeRAM arrays with excellent endurance performance for embedded memory
Xiao, Wenwu; Peng, Yue; Liu, Yan; Duan, Huifu; Bai, Fujun; Yu, Bing; Ren, Qiwei; Yu, Xiao; Han, Genquan
Sci China Inf Sci, 2023, 66(4): 149401
Keywords: FeRAM; Hf0.5Zr0.5O2; Arrays; Endurance; Ferroelectric
Cite as: Xiao W W, Peng Y, Liu Y, et al. Hf0.5Zr0.5O2 1T–1C FeRAM arrays with excellent endurance performance for embedded memory. Sci China Inf Sci, 2023, 66(4): 149401, doi: 10.1007/s11432-022-3469-5

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A comprehensive study of device variability of sub-5 nm nanosheet transistors and interplay with quantum confinement variation
Luo, Haowen; Li, Ruihan; Miao, Xiangshui; Wang, Xingsheng
Sci China Inf Sci, 2023, 66(2): 129402
Keywords: nanosheet transistor; TCAD simulation; quantum confinement variation; process variation; statistical variability; interplay
Cite as: Luo H W, Li R H, Miao X S, et al. A comprehensive study of device variability of sub-5 nm nanosheet transistors and interplay with quantum confinement variation. Sci China Inf Sci, 2023, 66(2): 129402, doi: 10.1007/s11432-021-3399-3

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A memristive neural network based matrix equation solver with high versatility and high energy efficiency
Li, Jiancong; Zhou, Houji; Li, Yi; Miao, Xiangshui
Sci China Inf Sci, 2023, 66(2): 122402
Keywords: matrix equation solving; memristor; linear neural network; matrix-multiplication; analog com- puting
Cite as: Li J C, Zhou H J, Li Y, et al. A memristive neural network based matrix equation solver with high versatility and high energy efficiency. Sci China Inf Sci, 2023, 66(2): 122402, doi: 10.1007/s11432-021-3374-x

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Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs
Wu, Yinhe; Zhang, Jincheng; Zhao, Shenglei; Wu, Zhaoxi; Wang, Zhongxu; Mei, Bo; Duan, Chao; Zhao, Dujun; Zhang, Weihang; Liu, Zhihong; Hao, Yue
Sci China Inf Sci, 2022, 65(8): 182404
Keywords: heavy ions irradiation; p-GaN normally-off HEMTs; line-shaped crystal defects; leakage path; defect percolation process
Cite as: Wu Y H, Zhang J C, Zhao S L, et al. Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs. Sci China Inf Sci, 2022, 65(8): 182404, doi: 10.1007/s11432-021-3305-2

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Efficient heterogeneous integration of InP/Si and GaSb/Si templates with ultra-smooth surfaces
Jin, Tingting; Lin, Jiajie; You, Tiangui; Zhang, Xiaolei; Liang, Hao; Zhu, Yifan; Sun, Jialiang; Shi, Hangning; Chi, Chaodan; Zhou, Min; Kudrawiec, Robert; Wang, Shumin; Ou, Xin
Sci China Inf Sci, 2022, 65(8): 182402
Keywords: heterogeneous integration; InP/Si; GaSb/Si; MBE; ion-slicing technique; selective chemical etching
Cite as: Jin T T, Lin J J, You T G, et al. Efficient heterogeneous integration of InP/Si and GaSb/Si templates with ultra-smooth surfaces. Sci China Inf Sci, 2022, 65(8): 182402, doi: 10.1007/s11432-021-3398-y

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Femtosecond laser-assisted switching in perpendicular magnetic tunnel junctions with double-interface free layer
Wang, Luding; Cai, Wenlong; Cao, Kaihua; Shi, Kewen; Koopmans, Bert; Zhao, Weisheng
Sci China Inf Sci, 2022, 65(4): 142403
Keywords: magnetic tunnel junctions; mtjs; heat-assisted magnetic recording; hamr; spintronics; femtosecond laser; thermally-assisted switching; tas
Cite as: Wang L D, Cai W L, Cao K H, et al. Femtosecond laser-assisted switching in perpendicular magnetic tunnel junctions with double-interface free layer. Sci China Inf Sci, 2022, 65(4): 142403, doi: 10.1007/s11432-020-3244-8

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Unidirectional p-GaN gate HEMT with composite source-drain field plates
Wang, Haiyong; Mao, Wei; Zhao, Shenglei; He, Yuanhao; Chen, Jiabo; Du, Ming; Zheng, Xuefeng; Wang, Chong; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue
Sci China Inf Sci, 2022, 65(2): 129405
Keywords: p-gan; hemt; reverse blocking; composite source-drain field plates; dynamic performance; electric field; breakdown voltage
Cite as: Wang H Y, Mao W, Zhao S L, et al. Unidirectional p-GaN gate HEMT with composite source-drain field plates. Sci China Inf Sci, 2022, 65(2): 129405, doi: 10.1007/s11432-021-3267-3

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Mobile-ionic FETs with ultra-scaled amorphous dielectric achieving ferroelectric behaviors and sub-kT/q swing with temperature down to 77 K
Liu, Huan; Yang, Qiyu; Jin, Chengji; Chen, Jiajia; Chou, Lulu; Yu, Xiao; Liu, Yan; Han, Genquan
Sci China Inf Sci, 2024, 67(1): 119401
Keywords: Ferroelectric-like; steep subthreshold swing; transistor; mobile ionic; amorphous dielectric
Cite as: Liu H, Yang Q Y, Jin C J, et al. Mobile-ionic FETs with ultra-scaled amorphous dielectric achieving ferroelectric behaviors and sub-kT/q swing with temperature down to 77 K. Sci China Inf Sci, 2024, 67(1): 119401, doi: 10.1007/s11432-022-3721-0

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A strong physical unclonable function with machine learning immunity for Internet of Things application
Ren, Pengpeng; Xue, Yongkang; Jing, Linglin; Zhang, Lining; Wang, Runsheng; Ji, Zhigang
Sci China Inf Sci, 2024, 67(1): 112404
Keywords: physical unclonable function; PUF; electron traps; authentication; encryption; cryptography; security
Cite as: Ren P P, Xue Y K, Jing L L, et al. A strong physical unclonable function with machine learning immunity for Internet of Things application. Sci China Inf Sci, 2024, 67(1): 112404, doi: 10.1007/s11432-022-3722-8

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Litho-AsymVnet: super-resolution lithography modeling with an asymmetric V-net architecture
Zhang, Qing; Zhang, Yuhang; Lu, Wei; Huang, Huajie; Zhong, Zheng; Zhou, Congshu; Li, Yongfu
Sci China Inf Sci, 2023, 66(12): 229406
Keywords: lithography simulation; super-resolution; autoencoder neural network; asymmetric architecture; physical verification
Cite as: Zhang Q, Zhang Y H, Lu W, et al. Litho-AsymVnet: super-resolution lithography modeling with an asymmetric V-net architecture. Sci China Inf Sci, 2023, 66(12): 229406, doi: 10.1007/s11432-022-3755-y

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High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation
Fan, Yutong; Liu, Xi; Huang, Ren; Wen, Yu; Zhang, Weihang; Zhang, Jincheng; Liu, Zhihong; Zhao, Shenglei
Sci China Inf Sci, 2023, 66(12): 229404
Keywords: GaN HEMT; Ohmic/Schokkty hybrid drain; double-heterostructure; threshold voltage stability; breakdown voltage; power dissipation
Cite as: Fan Y T, Liu X, Huang R, et al. . High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation. Sci China Inf Sci, 2023, 66(12): 229404, doi: 10.1007/s11432-022-3707-2

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CLEAR: a full-stack chip-in-loop emulator for analog RRAM based computing-in-memory system
Yu, Ruihua; Zhang, Wenqiang; Gao, Bin; Geng, Yiwen; Yao, Peng; Liu, Yuyi; Zhang, Qingtian; Tang, Jianshi; Wu, Dong; He, Hu; Deng, Ning; Qian, He; Wu, Huaqiang
Sci China Inf Sci, 2023, 66(12): 229402
Keywords: computing-in-memory; RRAM; emulator; chip-in-loop; full-stack
Cite as: Yu R H, Zhang W Q, Gao B, et al. CLEAR: a full-stack chip-in-loop emulator for analog RRAM based computing-in-memory system. Sci China Inf Sci, 2023, 66(12): 229402, doi: 10.1007/s11432-022-3756-3

Special Topic: Recent Progress of Fundamental Research on Post-Moore Novel Devices
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Toward monolithic growth integration of nanowire electronics in 3D architecture: a review
Liang, Lei; Hu, Ruijin; Yu, Linwei
Sci China Inf Sci, 2023, 66(10): 200406
Keywords: catalytic growth; silicon nanowires; electronics; monolithic 3D-integration
Cite as: Liang L, Hu R J, Yu L W. Toward monolithic growth integration of nanowire electronics in 3D architecture: a review. Sci China Inf Sci, 2023, 66(10): 200406, doi: 10.1007/s11432-023-3774-y

Special Topic: Recent Progress of Fundamental Research on Post-Moore Novel Devices
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In-memory computing based on phase change memory for high energy efficiency
He, Luchang; Li, Xi; Xie, Chenchen; Song, Zhitang
Sci China Inf Sci, 2023, 66(10): 200402
Keywords: in-memory computing; phase change memory; energy efficiency; neural network; memory wall
Cite as: He L C, Li X, Xie C C, et al. In-memory computing based on phase change memory for high energy efficiency. Sci China Inf Sci, 2023, 66(10): 200402, doi: 10.1007/s11432-023-3789-7

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Implementation of 16 Boolean logic operations based on one basic cell of spin-transfer-torque magnetic random access memory
Huang, Yan; Cao, Kaihua; Zhang, Kun; Wang, Jinkai; Shi, Kewen; Hao, Zuolei; Cai, Wenlong; Du, Ao; Yin, Jialiang; Yang, Qing; Li, Junfeng; Gao, Jianfeng; Zhao, Chao; Zhao, Weisheng
Sci China Inf Sci, 2023, 66(6): 162402
Keywords: in-memory computing; logic operation; magnetic tunnel junctions; transistor; spin transfer torque
Cite as: Huang Y, Cao K H, Zhang K, et al. Implementation of 16 Boolean logic operations based on one basic cell of spin-transfer-torque magnetic random access memory. Sci China Inf Sci, 2023, 66(6): 162402, doi: 10.1007/s11432-021-3562-8

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A Hf0.5Zr0.5O2 ferroelectric capacitor-based half-destructive read scheme for computing-in-memory
Zhao, Yulin; Wang, Yuan; Zhang, Donglin; Han, Zhongze; Hu, Qiao; Liu, Xuanzhi; Ding, Qingting; Cheng, Jinhui; Zhang, Wenjun; Cao, Yue; Zhou, Ruixi; Luo, Qing; Yang, Jianguo; Lv, Hangbing
Sci China Inf Sci, 2023, 66(5): 159402
Keywords: compute-in-memory; ferroelectric capacitors; destructive read operation; copy operation; write-back operation; half-destructive read scheme
Cite as: Zhao Y L, Wang Y, Zhang D L, et al. A Hf0.5Zr0.5O2 ferroelectric capacitor-based half-destructive read scheme for computing-in-memory. Sci China Inf Sci, 2023, 66(5): 159402, doi: 10.1007/s11432-021-3490-3

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Multi-grained system integration for hybrid-paradigm brain-inspired computing
Pei, Jing; Deng, Lei; Ma, Cheng; Liu, Xue; Shi, Luping
Sci China Inf Sci, 2023, 66(4): 142403
Keywords: brain-inspired computing; multi-grained system integration; hybrid paradigm; Tianjic chip; brain-inspired platform
Cite as: Pei J, Deng L, Ma C, et al. Multi-grained system integration for hybrid-paradigm brain-inspired computing. Sci China Inf Sci, 2023, 66(4): 142403, doi: 10.1007/s11432-021-3510-6

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1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate
Zhao, Shenglei; Zhang, Jincheng; Zhang, Yachao; Feng, Lansheng; Liu, Shuang; Song, Xiufeng; Yao, Yixin; Luo, Jun; Liu, Zhihong; Xu, Shengrui; Hao, Yue
Sci China Inf Sci, 2023, 66(2): 122407
Keywords: p-GaN gate; HEMTs; high voltage; SiC substrate
Cite as: Zhao S L, Zhang J C, Zhang Y C, et al. 1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate. Sci China Inf Sci, 2023, 66(2): 122407, doi: 10.1007/s11432-022-3475-9

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Keywords: random telegraph noise; threshold voltage fluctuations; RTN magnitude; reliability; variation
Cite as: Zhan X P, Chen J Z, Ji Z G. Insights of VG-dependent threshold voltage fluctuations from dual-point random telegraph noise characterization in nanoscale transistors. Sci China Inf Sci, 2022, 65(8): 189405, doi: 10.1007/s11432-021-3330-8

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Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate
Zhao, Dujun; Wu, Zhaoxi; Duan, Chao; Mei, Bo; Li, Zhongyang; Wang, Zhongxu; Tang, Qing; Yang, Qing; Wu, Yinhe; Zhang, Weihang; Liu, Zhihong; Zhao, Shenglei; Zhang, Jincheng; Hao, Yue
Sci China Inf Sci, 2022, 65(2): 122401
Keywords: reverse-blocking voltage; aln/algan hemts; schottky-drain; field plate; optimal passivation thickness
Cite as: Zhao D J, Wu Z X, Duan C, et al. Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate. Sci China Inf Sci, 2022, 65(2): 122401, doi: 10.1007/s11432-020-3166-9

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Effects of the VGS sweep range on the short channel effect in negative capacitance FinFETs
Zhang F, Zhang Z H, Yao J X, et al
Sci China Inf Sci, 2024, 67(6): 169404
Keywords: DIBL; negative capacitance; FinFET; HZO; short channel effect
Cite as: Zhang F, Zhang Z H, Yao J X, et al. Effects of the VGS sweep range on the short channel effect in negative capacitance FinFETs. Sci China Inf Sci, 2024, 67(6): 169404, doi: 10.1007/s11432-023-4006-7

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Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by Fe doped GaN substrate
Wang, Xiao; Lin, Zhi-Yu; Sun, Yuan-Hang; Yue, Long; Zhang, Yu-Min; Wang, Jian-Feng; Xu, Ke
Sci China Inf Sci, 2024, 67(6): 169403
Keywords: GaN HEMT; current leakage; Si spileup layer; Silvaco; Fe memory
Cite as: Wang X, Lin Z-Y, Sun Y-H, et al. Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by Fe doped GaN substrate. Sci China Inf Sci, 2024, 67(6): 169403, doi: 10.1007/s11432-024-4003-y

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High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz
Du, Hanghai; Hao, Lu; Liu, Zhihong; Song, Zeyu; Zhang, Yachao; Dang, Kui; Zhou, Jin; Ning, Jing; Li, Zan; Zhang, Jincheng; Hao, Yue
Sci China Inf Sci, 2024, 67(6): 169402
Keywords: compound semiconductor devices; millimeter wave RF devices; ohmic contacts; Gallium Nitride; AlGaN; GaN
Cite as: Du H H, Hao L, Liu Z H, et al. High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz. Sci China Inf Sci, 2024, 67(6): 169402, doi: 10.1007/s11432-024-3998-2

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Performance improvement of β-Ga2O3 SBD-based rectifier with embedded microchannels in ceramic substrate
Hong, Wen; Zhang, Chao; Zhang, Fang; Zheng, Xuefeng; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2024, 67(5): 159404
Keywords: β-Ga2O3; Rectifier; Embedded; Cooling; output power
Cite as: Hong W, Zhang C, Zhang F, et al. Performance improvement of β-Ga2O3 SBD-based rectifier with embedded microchannels in ceramic substrate. Sci China Inf Sci, 2024, 67(5): 159404, doi: 10.1007/s11432-024-3992-8

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Enhanced fatigue resistance of ferroelectric Al0.65Sc0.35N deposited by physical vapor deposition
Li, Yang; Yao, Danyang; Liu, Yan; Jiang, Zhi; Wang, Ruiqing; Ran, Xu; Zhou, Jiuren; Wang, Qikun; Wu, Guoqiang; Han, Genquan
Sci China Inf Sci, 2024, 67(5): 159401
Keywords: AlScN; ferroelectric; physical vapor deposition; fatigue; polarization switching; non-volatile; FeRAM
Cite as: Li Y, Yao D Y, Liu Y, et al. Enhanced fatigue resistance of ferroelectric Al0.65Sc0.35N deposited by physical vapor deposition. Sci China Inf Sci, 2024, 67(5): 159401, doi: 10.1007/s11432-023-3960-6

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Mitigating set-stuck failure in 3D phase change memory: substituting square pulses with surge pulses
Li, Ninghua; Cai, Wang; Xiang, Jun; Tong, Hao; Cheng, Weiming; Miao, Xiangshui
Sci China Inf Sci, 2024, 67(5): 152403
Keywords: surge pulse; phase change memory; PCM; integration; SET-stuck failure; SSF; square pulse
Cite as: Li N H, Cai W, Xiang J, et al. Mitigating set-stuck failure in 3D phase change memory: substituting square pulses with surge pulses. Sci China Inf Sci, 2024, 67(5): 152403, doi: 10.1007/s11432-023-3902-6

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An isolated symmetrical 2T2R cell enabling high precision and high density for RRAM-based in-memory computing
Ling, Yaotian; Wang, Zongwei; Yang, Yuhang; Bao, Lin; Bao, Shengyu; Wang, Qishen; Cai, Yimao; Huang, Ru
Sci China Inf Sci, 2024, 67(5): 152402
Keywords: RRAM; 2T2R; multi-level storage; weight asymmetry; in-memory computing
Cite as: Ling Y T, Wang Z W, Yang Y H, et al. An isolated symmetrical 2T2R cell enabling high precision and high density for RRAM-based in-memory computing. Sci China Inf Sci, 2024, 67(5): 152402, doi: 10.1007/s11432-023-3887-0

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Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure
Shi, Chunzhou; Yang, Ling; Zhang, Meng; Lu, Hao; Wu, Mei; Hou, Bin; Niu, Xuerui; Yu, Qian; Liu, Wenliang; Gao, Wenze; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2024, 67(4): 149401
Keywords: GaN; Double-channel; AlGaN/GaN heterostructure; Drain lag; RF
Cite as: Shi C Z, Yang L, Zhang M, et al. Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure. Sci China Inf Sci, 2024, 67(4): 149401, doi: 10.1007/s11432-023-3940-x

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A self-selecting memory element based on a method of interconnected ovonic threshold switching device
Wen, Jinyu; Wang, Lun; Chen, Jiangxi; Tong, Hao; Miao, Xiangshui
Sci China Inf Sci, 2024, 67(3): 139403
Keywords: ovonic threshold switching; OTS; interconnected structure; threshold voltage; polarity operation; self-selecting memory
Cite as: Wen J Y, Wang L, Chen J X, et al. A self-selecting memory element based on a method of interconnected ovonic threshold switching device. Sci China Inf Sci, 2024, 67(3): 139403, doi: 10.1007/s11432-023-3907-x

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Current collapse suppressed GaN diodes with 38 Watts high RF power rectifier capability
Dang, Kui; Qiu, Zhilin; Huo, Shudong; Zhan, Peng; Liu, Huining; Zhang, Yachao; Ning, Jing; Zhou, Hong; Zhang, Jincheng
Sci China Inf Sci, 2024, 67(2): 129401
Keywords: GaN; Schottky barrier diode; SBD; high power; microwave rectifier; microwave power transmission; MPT
Cite as: Dang K, Qiu Z L, Huo S D, et al. Current collapse suppressed GaN diodes with 38 Watts high RF power rectifier capability. Sci China Inf Sci, 2024, 67(2): 129401, doi: 10.1007/s11432-023-3795-8

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Geometry characteristics and wide temperature behavior of silicon-based GaN surface acoustic wave resonators with ultrahigh quality factor
Yu, Guofang; Liang, Renrong; Zhao, Haiming; Xiao, Lei; Cui, Jie; Zhao, Yue; Cui, Wenpu; Wang, Jing; Xu, Jun; Fu, Jun; Ren, Tianling
Sci China Inf Sci, 2024, 67(2): 122402
Keywords: GaN/Si SAW resonator; ultrahigh Q-factor; temperature-dependent performance; mBVD; losses
Cite as: Yu G F, Liang R R, Zhao H M, et al. Geometry characteristics and wide temperature behavior of silicon-based GaN surface acoustic wave resonators with ultrahigh quality factor. Sci China Inf Sci, 2024, 67(2): 122402, doi: 10.1007/s11432-022-3698-7

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Spin-orbit torque efficiency enhancement to tungsten-based SOT-MTJs by interface modification with an ultrathin MgO
Lu, Shiyang; Ning, Xiaobai; Zhang, Hongchao; Zhen, Sixi; Fan, Xiaofei; Xiong, Danrong; Zhu, Dapeng; Wang, Gefei; Liu, Hong-Xi; Cao, Kaihua; Zhao, Weisheng
Sci China Inf Sci, 2024, 67(1): 119403
Keywords: spin-orbital torque; MRAM; tungsten; interface modification; damping-like torque efficiency
Cite as: Lu S Y, Ning X B, Zhang H C, et al. Spin-orbit torque efficiency enhancement to tungsten-based SOT-MTJs by interface modification with an ultrathin MgO. Sci China Inf Sci, 2024, 67(1): 119403, doi: 10.1007/s11432-023-3809-3

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A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness
An, Sirui; Mi, Minhan; Wang, Pengfei; Liu, Sijia; Zhu, Qing; Zhang, Meng; Chen, Zhihong; Liu, Jielong; Guo, Siyin; Gong, Can; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2024, 67(1): 119402
Keywords: InAlN/GaN DC HEMTs; linearity; gate voltage swing; multi-threshold coupling; OIP3
Cite as: An S R, Mi M H, Wang P F, et al. A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness. Sci China Inf Sci, 2024, 67(1): 119402, doi: 10.1007/s11432-022-3720-9

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Realtime observation of "spring fracture" like AlGaN/GaN HEMT failure under bias
Zhu, Qing; Wang, Zhenni; Wei, Yuxiang; Yang, Ling; Lu, Xiaoli; Zhu, Jiejie; Zhong, Peng; Lei, Yimin; Ma, Xiaohua
Sci China Inf Sci, 2024, 67(1): 114401
Keywords: in-situ TEM; AlGaN/GaN; bending coutours; Joule heat; reliability
Cite as: Zhu Q, Wang Z N, Wei Y X, et al. Realtime observation of "spring fracture" like AlGaN/GaN HEMT failure under bias. Sci China Inf Sci, 2024, 67(1): 114401, doi: 10.1007/s11432-023-3867-4

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Transport mechanism in Hf0.5Zr0.5O2-based ferroelectric diodes
Yu, Haoran; Gong, Tiancheng; Yuan, Peng; Wang, Yuan; Gao, Zhaomeng; Xu, Xiaoxin; Sun, Ying; Cheng, Ran; Gao, Jianfeng; Li, Junfeng; Chen, Bing; Luo, Qing
Sci China Inf Sci, 2023, 66(12): 229403
Keywords: HZO; Fe-diode; transport mechanism; schottky model; hopping model
Cite as: Yu H R, Gong T C, Yuan P, et al. Transport mechanism in Hf0.5Zr0.5O2-based ferroelectric diodes. Sci China Inf Sci, 2023, 66(12): 229403, doi: 10.1007/s11432-021-3544-2

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Near-threshold-voltage operation in flash-based high-precision computing-in-memory to implement Poisson image editing
Feng, Yang; Chen, Bing; Tang, Mingfeng; Qi, Yuerang; Bai, Maoying; Wang, Chengcheng; Wang, Hai; Zhan, Xuepeng; Zhang, Junyu; Liu, Jing; Wu, Jixuan; Chen, Jiezhi
Sci China Inf Sci, 2023, 66(12): 222402
Keywords: NOR flash memory; computing-in-memory; variation; Poisson image editing
Cite as: Feng Y, Chen B, Tang M F, et al. Near-threshold-voltage operation in flash-based high-precision computing-in-memory to implement Poisson image editing. Sci China Inf Sci, 2023, 66(12): 222402, doi: 10.1007/s11432-022-3743-x

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Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology
Shi, Hangning; Yi, Ailun; Ding, Jiaxin; Liu, Xudong; Qin, Qingcheng; Yi, Juemin; Hu, Junjie; Wang, Miao; Cai, Demin; Wang, Jianfeng; Xu, Ke; Mu, Fengwen; Suga, Tadatomo; Heller, Rene; Wang, Mao; Zhou, Shengqiang; Xu, Wenhui; Huang, Kai; You, Tiangui; Ou, Xin
Sci China Inf Sci, 2023, 66(11): 219403
Keywords: heterogeneous integration; GaN on Si(100); GaNOI; ion-cutting technology; defect evolution
Cite as: Shi H N, Yi A L, Ding J X, et al. Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology. Sci China Inf Sci, 2023, 66(11): 219403, doi: 10.1007/s11432-022-3668-0

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A 3.3-Mbit/s true random number generator based on resistive random access memory
Song, Shiyue; Huang, Peng; Shen, Wensheng; Liu, Lifeng; Kang, Jinfeng
Sci China Inf Sci, 2023, 66(11): 219402
Keywords: random resistive access memory; true random number generator; stochastic number; entropy; randomness; hardware security
Cite as: Song S Y, Huang P, Shen W S, et al. A 3.3-Mbit/s true random number generator based on resistive random access memory. Sci China Inf Sci, 2023, 66(11): 219402, doi: 10.1007/s11432-022-3640-0

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Intrinsic variations of ultrathin hafnium oxide-based ferroelectric tunnel junctions induced by ferroelectric-dielectric phase fluctuations
Chang, Pengying; Fan, Mengqi; Du, Gang; Liu, Xiaoyan; Xie, Yiyang
Sci China Inf Sci, 2023, 66(10): 209402
Keywords: ferroelectric tunnel junction; hafnium oxide; statistical variation; crystalline phase; tunneling electroresistance; modeling and simulation
Cite as: Chang P Y, Fan M Q, Du G, et al. Intrinsic variations of ultrathin hafnium oxide-based ferroelectric tunnel junctions induced by ferroelectric-dielectric phase fluctuations. Sci China Inf Sci, 2023, 66(10): 209402, doi: 10.1007/s11432-022-3655-x

Special Topic: Recent Progress of Fundamental Research on Post-Moore Novel Devices
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Ferroelectric-like behaviors of metal-insulator-metal with amorphous dielectrics
Liu, Huan; Chen, Jiajia; Jin, Chengji; Yu, Xiao; Liu, Yan; Han, Genquan
Sci China Inf Sci, 2023, 66(10): 200410
Keywords: ferroelectric-like; mobile ion; amorphous dielectric; ZrO2; temperature
Cite as: Liu H, Chen J J, Jin C J, et al. Ferroelectric-like behaviors of metal-insulator-metal with amorphous dielectrics. Sci China Inf Sci, 2023, 66(10): 200410, doi: 10.1007/s11432-023-3759-x

Special Topic: Recent Progress of Fundamental Research on Post-Moore Novel Devices
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Breaking the energy-efficiency barriers for smart sensing applications with “Sensing with Computing” architectures
Yang, Xinghua; Liu, Zheyu; Tang, Kechao; Yin, Xunzhao; Zhuo, Cheng; Wei, Qi; Qiao, Fei
Sci China Inf Sci, 2023, 66(10): 200409
Keywords: low power consumption circuit design; sensing with computing; smart sensors; edge computing; multi-modal sensing
Cite as: Yang X H, Liu Z Y, Tang K C, et al. Breaking the energy-efficiency barriers for smart sensing applications with “Sensing with Computing” architectures. Sci China Inf Sci, 2023, 66(10): 200409, doi: 10.1007/s11432-023-3760-8

Special Topic: Recent Progress of Fundamental Research on Post-Moore Novel Devices
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Architecture-circuit-technology co-optimization for resistive random access memory-based computation-in-memory chips
Liu, Yuyi; Gao, Bin; Tang, Jianshi; Wu, Huaqiang; Qian, He
Sci China Inf Sci, 2023, 66(10): 200408
Keywords: resistive random-access memory; computation-in-memory; compact model; device-architecture-algorithm co-design; compiler
Cite as: Liu Y Y, Gao B, Tang J S, et al. Architecture-circuit-technology co-optimization for resistive random access memory-based computation-in-memory chips. Sci China Inf Sci, 2023, 66(10): 200408, doi: 10.1007/s11432-023-3785-8

Special Topic: Recent Progress of Fundamental Research on Post-Moore Novel Devices
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Research progress on low-power artificial intelligence of things (AIoT) chip design
Ye, Le; Wang, Zhixuan; Jia, Tianyu; Ma, Yufei; Shen, Linxiao; Zhang, Yihan; Li, Heyi; Chen, Peiyu; Wu, Meng; Liu, Ying; Jing, Yiqi; Zhang, Hao; Huang, Ru
Sci China Inf Sci, 2023, 66(10): 200407
Keywords: artificial intelligence; Internet of Things; low-power; chip design; random sparse event
Cite as: Ye L, Wang Z X, Jia T Y, et al. Research progress on low-power artificial intelligence of things (AIoT) chip design. Sci China Inf Sci, 2023, 66(10): 200407, doi: 10.1007/s11432-023-3813-8

Special Topic: Recent Progress of Fundamental Research on Post-Moore Novel Devices
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Recent progress in InGaZnO FETs for high-density 2T0C DRAM applications
Yan, Shengzhe; Cong, Zhaori; Lu, Nianduan; Yue, Jinshan; Luo, Qing
Sci China Inf Sci, 2023, 66(10): 200404
Keywords: IGZO FET; 2T0C DRAM; high density; compact modeling; computing-in-memory; monolithic 3D integration
Cite as: Yan S Z, Cong Z R, Lu N D, et al. Recent progress in InGaZnO FETs for high-density 2T0C DRAM applications. Sci China Inf Sci, 2023, 66(10): 200404, doi: 10.1007/s11432-023-3802-8

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Design memristor-based computing-in-memory for AI accelerators considering the interplay between devices, circuits, and system
An, Junjie; Wang, Linfang; Ye, Wang; Li, Weizeng; Gao, Hanghang; Li, Zhi; Zhou, Zhidao; Tian, Jinghui; Gao, Jianfeng; Dou, Chunmeng; Liu, Qi
Sci China Inf Sci, 2023, 66(8): 182404
Keywords: memristor; resistive memory; computing-in-memory; artificial intelligence; cross-layer co-design
Cite as: An J J, Wang L F, Ye W, et al. Design memristor-based computing-in-memory for AI accelerators considering the interplay between devices, circuits, and system. Sci China Inf Sci, 2023, 66(8): 182404, doi: 10.1007/s11432-022-3627-8

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How could imperfect device properties influence the performances of spiking neural networks?
Chen, Jingyang; Wang, Zhihao; Wang, Tong; Huang, Heming; Shao, Zheyuan; Wang, Zhe; Guo, Xin
Sci China Inf Sci, 2023, 66(8): 182403
Keywords: oxides; memristive devices; device properties; spiking neural networks; neuromorphic computing
Cite as: Chen J Y, Wang Z H, Wang T, et al. How could imperfect device properties influence the performances of spiking neural networks?. Sci China Inf Sci, 2023, 66(8): 182403, doi: 10.1007/s11432-022-3601-8

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Impact of polarization switching on the effective carrier mobility of HfZrOx ferroelectric field-effect transistor
Liu, Fenning; Peng, Yue; Xiao, Wenwu; Liu, Yan; Yu, Xiao; Han, Genquan
Sci China Inf Sci, 2023, 66(6): 169402
Keywords: mobility; HfZrOx; FeFET; trapping; detrapping; endurance; retention
Cite as: Liu F N, Peng Y, Xiao W W, et al. Impact of polarization switching on the effective carrier mobility of HfZrOx ferroelectric field-effect transistor. Sci China Inf Sci, 2023, 66(6): 169402, doi: 10.1007/s11432-022-3491-6

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Neuromorphic terahertz imaging based on carbon nanotube circuits
Yang, Nan; Si, Zhizhong; Wang, Xinhe; Lin, Xiaoyang; Zhao, Weisheng
Sci China Inf Sci, 2023, 66(6): 169401
Keywords: CNTs; perception; memory; classification; STT-MTJ; THz
Cite as: Yang N, Si Z Z, Wang X H, et al. Neuromorphic terahertz imaging based on carbon nanotube circuits. Sci China Inf Sci, 2023, 66(6): 169401, doi: 10.1007/s11432-021-3533-3

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Modeling and physical mechanism analysis of the effect of a polycrystalline-ferroelectric gate on FE-FinFETs
Wang, Chengxu; Yu, Hao; Wang, Yichen; Zhang, Zichong; Miao, Xiangshui; Wang, Xingsheng
Sci China Inf Sci, 2023, 66(5): 159403
Keywords: FEFET; polycrystalline-ferroelectric; statistical variability; multi-grain model; TCAD simulation
Cite as: Wang C X, Yu H, Wang Y C, et al. Modeling and physical mechanism analysis of the effect of a polycrystalline-ferroelectric gate on FE-FinFETs. Sci China Inf Sci, 2023, 66(5): 159403, doi: 10.1007/s11432-022-3501-7

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Co-optimization strategy between array operation and weight mapping for flash computing arrays to achieve high computing efficiency and accuracy
Yu, Guihai; Huang, Peng; Han, Runze; Han, Lixia; Liu, Xiaoyan; Kang, Jinfeng
Sci China Inf Sci, 2023, 66(2): 129403
Keywords: neural network; Flash computing array; efficient computation; weight mapping; interconnect resistance
Cite as: Yu G H, Huang P, Han R Z, et al. Co-optimization strategy between array operation and weight mapping for flash computing arrays to achieve high computing efficiency and accuracy. Sci China Inf Sci, 2023, 66(2): 129403, doi: 10.1007/s11432-021-3381-3

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Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light
Chen, Yilin; Zhu, Qing; Zhu, Jiejie; Mi, Minhan; Zhang, Meng; Zhou, Yuwei; Zhao, Ziyue; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2023, 66(2): 122401
Keywords: GaN; MIS HEMTs; off-state stress; UV light; hole trapping
Cite as: Chen Y L, Zhu Q, Zhu J J, et al. Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light. Sci China Inf Sci, 2023, 66(2): 122401, doi: 10.1007/s11432-021-3377-2

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Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method
Liu, Siyu; Ma, Xiaohua; Zhu, Jiejie; Mi, Minhan; Guo, Jingshu; Liu, Jielong; Chen, Yilin; Zhu, Qing; Yang, Ling; Hao, Yue
Sci China Inf Sci, 2022, 65(10): 202401
Keywords: GaN; InAlN/GaN HEMTs; etching damage; scattering mechanism
Cite as: Liu S Y, Ma X H, Zhu J J, et al. Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method. Sci China Inf Sci, 2022, 65(10): 202401, doi: 10.1007/s11432-021-3359-y

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Single event transients induced by pulse laser in Ge pMOSFETs and its supply voltage dependence
LIU, Jingyi; AN, Xia; LI, Gensong; REN, Zhexuan; LI, Ming; ZHANG, Xing; HUANG, Ru
Sci China Inf Sci, 2022, 65(8): 189402
Keywords: Ge pMOSFETs; single event transient; single event effect; SEE; pulse laser; supply voltage dependence
Cite as: Liu J Y, An X, Li G S, et al. Single event transients induced by pulse laser in Ge pMOSFETs and its supply voltage dependence. Sci China Inf Sci, 2022, 65(8): 189402, doi: 10.1007/s11432-021-3372-2

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Effects of non-fatal electrostatic discharge on the threshold voltage degradation in nano CMOS devices
Wong, Hei; Dong, Shurong; Chen, Zehua
Sci China Inf Sci, 2022, 65(2): 129403
Keywords: nano cmos; esd; reliability; hot-carrier; charge trapping
Cite as: Wong H, Dong S R, Chen Z H. Effects of non-fatal electrostatic discharge on the threshold voltage degradation in nano CMOS devices. Sci China Inf Sci, 2022, 65(2): 129403, doi: 10.1007/s11432-020-3197-8

量子(28)

Special Focus on Quantum Information
RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 13

Hybrid quantum key distribution network
Ren, Siyu; Wang, Yu; Su, Xiaolong
Sci China Inf Sci, 2022, 65(10): 200502
Keywords: quantum network; quantum key distribution; hybrid quantum information; continuous variable; discrete variable
Cite as: Ren S Y, Wang Y, Su X L. Hybrid quantum key distribution network. Sci China Inf Sci, 2022, 65(10): 200502, doi: 10.1007/s11432-022-3509-6

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Quantum algorithm for kernelized correlation filter
Gao, Shang; Pan, Shijie; Yang, Yuguang
Sci China Inf Sci, 2023, 66(2): 129501
Keywords: kernelized correlation filter; quantum computing; circulant matrices; quantum Fourier transform; target tracking
Cite as: Gao S, Pan S J, Yang Y G. Quantum algorithm for kernelized correlation filter. Sci China Inf Sci, 2023, 66(2): 129501, doi: 10.1007/s11432-021-3400-3

Special Topic: Quantum Information
RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 9

Practical continuous-variable quantum key distribution with feasible optimization parameters
Ma, Li; Yang, Jie; Zhang, Tao; Shao, Yun; Liu, Jinlu; Luo, Yujie; Wang, Heng; Huang, Wei; Fan, Fan; Zhou, Chuang; Zhang, Liangliang; Zhang, Shuai; Zhang, Yichen; Li, Yang; Xu, Bingjie
Sci China Inf Sci, 2023, 66(8): 180507
Keywords: continuous-variable; quantum key distribution; post-processing; optimization; secret key rate
Cite as: Ma L, Yang J, Zhang T, et al. Practical continuous-variable quantum key distribution with feasible optimization parameters. Sci China Inf Sci, 2023, 66(8): 180507, doi: 10.1007/s11432-022-3712-3

Special Focus on Quantum Information
RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 8

Variational quantum attacks threaten advanced encryption standard based symmetric cryptography
Wang, Zeguo; Wei, Shijie; Long, Gui-Lu; Hanzo, Lajos
Sci China Inf Sci, 2022, 65(10): 200503
Keywords: S-DES; VQA; ansatz; cost function; optimization
Cite as: Wang Z G, Wei S J, Long G-L, et al. Variational quantum attacks threaten advanced encryption standard based symmetric cryptography. Sci China Inf Sci, 2022, 65(10): 200503, doi: 10.1007/s11432-022-3511-5

Special Focus on Quantum Information
RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 7

Polarization-insensitive quantum key distribution using planar lightwave circuit chips
Zhang, Guo-Wei; Chen, Wei; Fan-Yuan, Guan-Jie; Zhang, Li; Wang, Fang-Xiang; Wang, Shuang; Yin, Zhen-Qiang; He, De-Yong; Liu, Wen; An, Jun-Ming; Guo, Guang-Can; Han, Zheng-Fu
Sci China Inf Sci, 2022, 65(10): 200506
Keywords: polarization insensitive; time-bin; asymmetric Faraday-Michelson interferometer; quantum key distribution; planar lightwave circuit
Cite as: Zhang G-W, Chen W, Fan-Yuan G-J, et al. Polarization-insensitive quantum key distribution using planar lightwave circuit chips. Sci China Inf Sci, 2022, 65(10): 200506, doi: 10.1007/s11432-022-3514-3

Special Topic: Quantum Information
REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 5

High-dimensional quantum information processing on programmable integrated photonic chips
Chi, Yulin; Yu, Yue; Gong, Qihuang; Wang, Jianwei
Sci China Inf Sci, 2023, 66(8): 180501
Keywords: high-dimensional quantum information processing; quantum computation; integrated quantum photonics
Cite as: Chi Y L, Yu Y, Gong Q H, et al. High-dimensional quantum information processing on programmable integrated photonic chips. Sci China Inf Sci, 2023, 66(8): 180501, doi: 10.1007/s11432-022-3602-0

Special Focus on Quantum Information
RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 5

Quantum spectral clustering algorithm for unsupervised learning
Li, Qingyu; Huang, Yuhan; Jin, Shan; Hou, Xiaokai; Wang, Xiaoting
Sci China Inf Sci, 2022, 65(10): 200504
Keywords: quantum algorithm; machine learning; spectral clustering; quantum phase estimation; Grover’s search; Hamiltonian simulation
Cite as: Li Q Y, Huang Y H, Jin S, et al. Quantum spectral clustering algorithm for unsupervised learning. Sci China Inf Sci, 2022, 65(10): 200504, doi: 10.1007/s11432-022-3492-x

Special Topic: Quantum Information
REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 4

Nonadiabatic holonomic quantum computation and its optimal control
Liang, Yan; Shen, Pu; Chen, Tao; Xue, Zheng-Yuan
Sci China Inf Sci, 2023, 66(8): 180502
Keywords: quantum computation; geometric phases; quantum gates; optimal control
Cite as: Liang Y, Shen P, Chen T, et al. Nonadiabatic holonomic quantum computation and its optimal control. Sci China Inf Sci, 2023, 66(8): 180502, doi: 10.1007/s11432-023-3824-0

RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 4

Quantum algorithm and experimental demonstration for the subset sum problem
Zheng, Qilin; Zhu, Pingyu; Xue, Shichuan; Wang, Yang; Wu, Chao; Yu, Xinyao; Yu, Miaomiao; Liu, Yingwen; Deng, Mingtang; Wu, Junjie; Xu, Ping
Sci China Inf Sci, 2022, 65(8): 182501
Keywords: quantum algorithm; subset sum; quadratic speedup; encryption; algorithm complexity
Cite as: Zheng Q L, Zhu P Y, Xue S C, et al. Quantum algorithm and experimental demonstration for the subset sum problem. Sci China Inf Sci, 2022, 65(8): 182501, doi: 10.1007/s11432-021-3334-1

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Highly efficient twin-field quantum key distribution with neural networks
Liu, Jingyang; Jiang, Qingqing; Ding, Huajian; Ma, Xiao; Sun, Mingshuo; Xu, Jiaxin; Zhang, Chun-Hui; Xie, Shipeng; Li, Jian; Zeng, Guigen; Zhou, Xingyu; Wang, Qin
Sci China Inf Sci, 2023, 66(8): 189402
Keywords: quantum key distribution; twin-field; phase drift; recurrent neural network; feedback control; field-programmable gate array
Cite as: Liu J Y, Jiang Q Q, Ding H J, et al. Highly efficient twin-field quantum key distribution with neural networks. Sci China Inf Sci, 2023, 66(8): 189402, doi: 10.1007/s11432-022-3619-0

Special Topic: Quantum Information
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Secret key rate of continuous-variable quantum key distribution with finite codeword length
Feng, Yan; Qiu, Runhe; Zhang, Kun; Jiang, Xue-Qin; Zhang, Meixiang; Huang, Peng; Zeng, Guihua
Sci China Inf Sci, 2023, 66(8): 180511
Keywords: continuous-variable quantum key distribution; finite codeword length; information reconciliation; sphere-packing bound; secret key rate
Cite as: Feng Y, Qiu R H, Zhang K, et al. Secret key rate of continuous-variable quantum key distribution with finite codeword length. Sci China Inf Sci, 2023, 66(8): 180511, doi: 10.1007/s11432-022-3656-4

Special Topic: Quantum Information
RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 3

Low-loss, dual-polarization asymmetric Mach-Zehnder interferometer chips for quantum key distribution
Ren, Meizhen; Zhou, Lai; Yuan, Zhiliang
Sci China Inf Sci, 2023, 66(8): 180503
Keywords: quantum key distribution; dual-polarization; asymmetric Mach-Zehnder interferometer; polarization beam splitter; silica-based planar lightwave circuit technology
Cite as: Ren M Z, Zhou L, Yuan Z L. Low-loss, dual-polarization asymmetric Mach-Zehnder interferometer chips for quantum key distribution. Sci China Inf Sci, 2023, 66(8): 180503, doi: 10.1007/s11432-022-3641-x

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A hybrid quantum-classical Hamiltonian learning algorithm
Wang, Youle; Li, Guangxi; Wang, Xin
Sci China Inf Sci, 2023, 66(2): 129502
Keywords: quantum computing; quantum learning; near-term quantum algorithm; quantum-classical algorithm; quantum many-body system
Cite as: Wang Y L, Li G X, Wang X. A hybrid quantum-classical Hamiltonian learning algorithm. Sci China Inf Sci, 2023, 66(2): 129502, doi: 10.1007/s11432-021-3382-2

Special Topic: Quantum Information
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Novel entanglement compression for QKD protocols using isometric tensors
Lai, Hong; Pieprzyk, Josef; Pan, Lei
Sci China Inf Sci, 2023, 66(8): 180510
Keywords: Entanglement compression; Generalized isometric tensors; Tensor network states; Decompression; Quantum Key Distribution
Cite as: Lai H, Pieprzyk J, Pan L. Novel entanglement compression for QKD protocols using isometric tensors. Sci China Inf Sci, 2023, 66(8): 180510, doi: 10.1007/s11432-022-3680-9

Special Topic: Quantum Information
PROGRESS Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

Quantum NETwork: from theory to practice
Fang, Kun; Zhao, Jingtian; Li, Xiufan; Li, Yifei; Duan, Runyao
Sci China Inf Sci, 2023, 66(8): 180509
Keywords: quantum network; quantum internet; quantum network architecture; quantum network protocol; quantum network simulation; quantum software toolkit
Cite as: Fang K, Zhao J T, Li X F, et al. Quantum NETwork: from theory to practice. Sci China Inf Sci, 2023, 66(8): 180509, doi: 10.1007/s11432-023-3773-4

Special Topic: Quantum Information
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Mitigating quantum errors via truncated Neumann series
Wang, Kun; Chen, Yu-Ao; Wang, Xin
Sci China Inf Sci, 2023, 66(8): 180508
Keywords: near-term quantum devices; quantum error mitigation; quantum computing
Cite as: Wang K, Chen Y-A, Wang X. Mitigating quantum errors via truncated Neumann series. Sci China Inf Sci, 2023, 66(8): 180508, doi: 10.1007/s11432-023-3786-1

Special Focus on Quantum Information
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Review of noble-gas spin amplification via the spin-exchange collisions
Su, Haowen; Jiang, Min; Peng, Xinhua
Sci China Inf Sci, 2022, 65(10): 200501
Keywords: nuclear spin; noble gas; maser; spin amplification; Floquet system
Cite as: Su H W, Jiang M, Peng X H. Review of noble-gas spin amplification via the spin-exchange collisions. Sci China Inf Sci, 2022, 65(10): 200501, doi: 10.1007/s11432-022-3550-1

Special Topic: Quantum Information
RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

Optimizing Raman quantum memory with dynamic phase
Ming, Sheng; Guo, Jinxian; Wu, Yuan; Bao, Guzhi; Wu, Shuhe; Shi, Minwei; Chen, Liqing; Zhang, Weiping
Sci China Inf Sci, 2023, 66(8): 180505
Keywords: quantum information; quantum optics; quantum communication; quantum memory; Raman scattering
Cite as: Ming S, Guo J X, Wu Y, et al. Optimizing Raman quantum memory with dynamic phase. Sci China Inf Sci, 2023, 66(8): 180505, doi: 10.1007/s11432-022-3614-7

Special Topic: Quantum Information
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Detecting coherence with respect to general quantum measurements
Chen, Yu-Cheng; Cheng, Jiong; Zhang, Wen-Zhao; Zhang, Cheng-Jie
Sci China Inf Sci, 2023, 66(8): 180504
Keywords: coherence witness; general quantum measurements; block coherence; POVM-based coherence; quantum coherence
Cite as: Chen Y-C, Cheng J, Zhang W-Z, et al. Detecting coherence with respect to general quantum measurements. Sci China Inf Sci, 2023, 66(8): 180504, doi: 10.1007/s11432-022-3620-2

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Exact quantum query complexity of weight decision problems via Chebyshev polynomials
He, Xiaoyu; Sun, Xiaoming; Yang, Guang; Yuan, Pei
Sci China Inf Sci, 2023, 66(2): 129503
Keywords: weight decision problems; chebyshev polynomials; exact quantum query complexity; exact quantum algorithms; quantum computing
Cite as: He X Y, Sun X M, Yang G, et al. Exact quantum query complexity of weight decision problems via Chebyshev polynomials. Sci China Inf Sci, 2023, 66(2): 129503, doi: 10.1007/s11432-021-3468-x

Special Focus on Quantum Information
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Multi-channel quantum parameter estimation
Bao, Liying; Qi, Bo; Wang, Yabo; Dong, Daoyi; Wu, Rebing
Sci China Inf Sci, 2022, 65(10): 200505
Keywords: quantum metrology; quantum parameter estimation; multi-channel; quantum Fisher information
Cite as: Bao L Y, Qi B, Wang Y B, et al. Multi-channel quantum parameter estimation. Sci China Inf Sci, 2022, 65(10): 200505, doi: 10.1007/s11432-020-3196-x

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Distribution of polarization squeezed light through a 20 km fiber channel
Li, Chao; Ren, Siyu; Yan, Yanru; Li, Yalin; Wang, Meihong; Su, Xiaolong
Sci China Inf Sci, 2024, 67(5): 159501
Keywords: polarization squeezed light; optical parametric amplifier; quantum communication; squeezed state; quantum noise
Cite as: Li C, Ren S Y, Yan Y R, et al. Distribution of polarization squeezed light through a 20 km fiber channel. Sci China Inf Sci, 2024, 67(5): 159501, doi: 10.1007/s11432-024-3976-4

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Quantum key distribution over a mimicked dynamic-scattering channel
Lu, Qi-Hang; Wang, Fang-Xiang; Chen, Wei; Fu, Hai-Yang; Lu, Yin-Jie; Wang, Shuang; He, De-Yong; Yin, Zhen-Qiang; Guo, Guang-Can; Han, Zheng-Fu
Sci China Inf Sci, 2024, 67(4): 142503
Keywords: quantum key distribution; free space channel; channel turbulence; channel scattering; wavefront shaping
Cite as: Lu Q-H, Wang F-X, Chen W, et al. Quantum key distribution over a mimicked dynamic-scattering channel. Sci China Inf Sci, 2024, 67(4): 142503, doi: 10.1007/s11432-023-3945-x

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Continuous variable quantum teleportation and remote state preparation between two space-separated local networks
Ren, Siyu; Han, Dongmei; Wang, Meihong; Su, Xiaolong
Sci China Inf Sci, 2024, 67(4): 142502
Keywords: quantum communication; quantum network; quantum teleportation; remote state preparation; entanglement swapping; continuous variable
Cite as: Ren S Y, Han D M, Wang M H, et al. Continuous variable quantum teleportation and remote state preparation between two space-separated local networks. Sci China Inf Sci, 2024, 67(4): 142502, doi: 10.1007/s11432-023-3913-2

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Quantum self-attention neural networks for text classification
Li, Guangxi; Zhao, Xuanqiang; Wang, Xin
Sci China Inf Sci, 2024, 67(4): 142501
Keywords: quantum neural networks; self-attention; natural language processing; text classification; parameterized quantum circuits
Cite as: Li G X, Zhao X Q, Wang X. Quantum self-attention neural networks for text classification. Sci China Inf Sci, 2024, 67(4): 142501, doi: 10.1007/s11432-023-3879-7

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Density peak clustering using tensor network
Shi, Xiao; Shang, Yun
Sci China Inf Sci, 2024, 67(3): 139404
Keywords: tensor networks; entanglement entropy; clustering; density-based algorithm; unsupervised learning
Cite as: Shi X, Shang Y. Density peak clustering using tensor network. Sci China Inf Sci, 2024, 67(3): 139404, doi: 10.1007/s11432-023-3869-3

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Keywords: remote state preparation; two-qubit state; GHZ state; origin quantum cloud; fidelity
Cite as: Li N C, Xu L, Liu J-M. Experimental realization of deterministic joint remote preparation of an arbitrary two-qubit pure state via GHZ states. Sci China Inf Sci, 2024, 67(3): 139402, doi: 10.1007/s11432-023-3873-6

Special Topic: Quantum Information
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Experimental entanglement quantification for unknown quantum states in a semi-device-independent manner
Guo, Yu; Lin, Lijinzhi; Cao, Huan; Zhang, Chao; Lin, Xiaodie; Hu, Xiao-Min; Liu, Bi-Heng; Huang, Yun-Feng; Wei, Zhaohui; Han, Yong-Jian; Li, Chuan-Feng; Guo, Guang-Can
Sci China Inf Sci, 2023, 66(8): 180506
Keywords: entanglement quantification; semi-device-independent; bell nonlocality; multi-partite system; multi-level system
Cite as: Guo Y, Lin L J Z, Cao H, et al. Experimental entanglement quantification for unknown quantum states in a semi-device-independent manner. Sci China Inf Sci, 2023, 66(8): 180506, doi: 10.1007/s11432-022-3681-2

光电子(31)

REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 25

Microwave photonics
Yao, Jianping; Capmany, Jose
Sci China Inf Sci, 2022, 65(12): 221401
Keywords: microwave photonics; photonic integrated circuits; microwave photonic link; microwave photonic signal processor; optoelectronic oscillator; radio over fiber
Cite as: Yao J P, Capmany J. Microwave photonics. Sci China Inf Sci, 2022, 65(12): 221401, doi: 10.1007/s11432-021-3524-0

RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 11

RGB WGM lasing woven in fiber braiding cavity
Ge, Kun; Xu, Zhiyang; Guo, Dan; Ben Niu; Ruan, Jun; Cui, Libin; Zhai, Tianrui
Sci China Inf Sci, 2022, 65(8): 182403
Keywords: RGB; whispering gallery mode (WGM) lasing; fiber braiding cavity; full-color gamut
Cite as: Ge K, Xu Z Y, Guo D, et al. RGB WGM lasing woven in fiber braiding cavity. Sci China Inf Sci, 2022, 65(8): 182403, doi: 10.1007/s11432-022-3436-y

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Second harmonic generation in a hollow-core fiber filled with GaSe nanosheets
Hao, Zhen; Ma, Yuxin; Jiang, Biqiang; Hou, Yueguo; Li, Ailun; Yi, Ruixuan; Gan, Xuetao; Zhao, Jianlin
Sci China Inf Sci, 2022, 65(6): 162403
Keywords: second-harmonic generation; gallium selenide; hollow-core fiber; broadband operation wavelength; time-varied second harmonic generation
Cite as: Hao Z, Ma Y X, Jiang B Q, et al. Second harmonic generation in a hollow-core fiber filled with GaSe nanosheets. Sci China Inf Sci, 2022, 65(6): 162403, doi: 10.1007/s11432-021-3331-3

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Simplified single-end Rayleigh and Brillouin hybrid distributed fiber-optic sensing system
Huang, Linjing; He, Zuyuan; Fan, Xinyu
Sci China Inf Sci, 2023, 66(2): 129404
Keywords: optical fiber sensor; distributed fiber-optic sensing; Rayleigh backscattering; Brillouin backscattering; optical measurement technology
Cite as: Huang L J, He Z Y, Fan X Y. Simplified single-end Rayleigh and Brillouin hybrid distributed fiber-optic sensing system. Sci China Inf Sci, 2023, 66(2): 129404, doi: 10.1007/s11432-022-3554-0

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Keywords: difference-frequency generation; mid-infrared source; PPLN; random laser; temperature-tuning free
Cite as: Hu B, Wu H, Tian K, et al. Continuous-wave 2.9–3.8 µm random lasing via temperature-tunning free difference-frequency generation of random fiber lasers in PPLN crystal. Sci China Inf Sci, 2023, 66(8): 189401, doi: 10.1007/s11432-022-3552-5

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Terahertz magneto-optical isolator based on graphene-silicon waveguide
Zhao, Dan; Fan, Fei; Li, Tengfei; Tan, Zhiyu; Cheng, Jierong; Chang, Shengjiang
Sci China Inf Sci, 2022, 65(6): 169401
Keywords: graphene; magneto-optical device; isolator; waveguide; terahertz
Cite as: Zhao D, Fan F, Li T F, et al. Terahertz magneto-optical isolator based on graphene-silicon waveguide. Sci China Inf Sci, 2022, 65(6): 169401, doi: 10.1007/s11432-020-3265-2

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A compact polarization-integrated long wavelength infrared focal plane array based on InAs/GaSb superlattice
Zhou, Jian; Zhou, Yi; Shi, Ying; Wang, Fangfang; Xu, Zhicheng; Bai, Zhizhong; Huang, Min; Zheng, Lulu; Liang, Zhaoming; Zhu, Yihong; Xu, Qingqing; Shen, Yiming; Ying, Xiangxiao; Chen, Jianxin
Sci China Inf Sci, 2022, 65(2): 122407
Keywords: lwir; polarization integration; infrared detector; optical crosstalk; extinction ration
Cite as: Zhou J, Zhou Y, Shi Y, et al. A compact polarization-integrated long wavelength infrared focal plane array based on InAs/GaSb superlattice. Sci China Inf Sci, 2022, 65(2): 122407, doi: 10.1007/s11432-021-3252-2

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Radiation build-up and dissipation in Raman random fiber laser
Lin, Shengtao; Wang, Zinan; Zhang, Jiaojiao; Wang, Pan; Wu, Han; Qi, Yifei
Sci China Inf Sci, 2024, 67(1): 112402
Keywords: random fiber laser; stimulated Raman scattering; transient phenomenon; nonlinear optics; biological growth dynamics
Cite as: Lin S T, Wang Z N, Zhang J J, et al. Radiation build-up and dissipation in Raman random fiber laser. Sci China Inf Sci, 2024, 67(1): 112402, doi: 10.1007/s11432-022-3677-7

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Double-branch fusion network with a parallel attention selection mechanism for camouflaged object detection
Xiang, Junjiang; Pan, Qing; Zhang, Zhengrong; Fu, Songnian; Qin, Yuwen
Sci China Inf Sci, 2023, 66(6): 162403
Keywords: camouflaged object detection; attention mechanism; feature extraction; feature aggregation; texture information; fuzzy boundary
Cite as: Xiang J J, Pan Q, Zhang Z G, et al. Double-branch fusion network with a parallel attention selection mechanism for camouflaged object detection. Sci China Inf Sci, 2023, 66(6): 162403, doi: 10.1007/s11432-022-3592-8

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Experimental demonstration of photonic spike-timing-dependent plasticity based on a VCSOA
Song, Ziwei; Xiang, Shuiying; Cao, Xingyu; Zhao, Shihao; Hao, Yue
Sci China Inf Sci, 2022, 65(8): 182401
Keywords: neuromorphic photonics; vertical-cavity semiconductor optical amplifier; spike-timing-dependent plasticity; optical neural systems; pulsed optical injection
Cite as: Song Z W, Xiang S Y, Cao X Y, et al. Experimental demonstration of photonic spike-timing-dependent plasticity based on a VCSOA. Sci China Inf Sci, 2022, 65(8): 182401, doi: 10.1007/s11432-021-3350-9

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In situ plasmonic & electrochemical fiber-optic sensor for multi-metal-ions detection
Peng, Xiaoling; Yang, Zhiyong; Peng, Bo; Li, Zhi; Ren, Zhicong; Wang, Xicheng; Li, Jiahai; Li, Zhencheng; Chen, Liang; You, Daotong; Li, Kaiwei; Li, Jianqing; Guo, Tuan
Sci China Inf Sci, 2024, 67(1): 112406
Keywords: optical fiber sensor; surface plasmon resonance; electrochemical measurement; ions detection; water pollution
Cite as: Peng X L, Yang Z Y, Peng B, et al. In situ plasmonic & electrochemical fiber-optic sensor for multi-metal-ions detection. Sci China Inf Sci, 2024, 67(1): 112406, doi: 10.1007/s11432-023-3746-8

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Low-bias, high-photoresponsivity SnSe2 nanofilm with an Au split-ring array-based THz detector toward 6G communication
Song, Qi; Zhou, Zhiwen; Xu, Yifei; Zhang, Min; Yang, Junbo; Liang, Huawei; Wang, Tianwu; Yan, Peiguang
Sci China Inf Sci, 2023, 66(6): 169405
Keywords: Tearhertz detector; SnSe2 nanofilm; Au split ring array; 6G communication; low bias
Cite as: Song Q, Zhou Z W, Xu Y F, et al. Low-bias, high-photoresponsivity SnSe2 nanofilm with an Au split-ring array-based THz detector toward 6G communication. Sci China Inf Sci, 2023, 66(6): 169405, doi: 10.1007/s11432-022-3547-9

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Advances in wide-tuning and narrow-linewidth external-cavity diode lasers
Cui, Qiang; Lei, Yuxin; Chen, Yongyi; Qiu, Cheng; Wang, Ye; Zhang, Dexiao; Fan, Lutai; Song, Yue; Jia, Peng; Liang, Lei; Wang, Yubing; Qin, Li; Ning, Yongqiang; Wang, Lijun
Sci China Inf Sci, 2022, 65(8): 181401
Keywords: wide tuning; narrow linewidth; external-cavity diode laser; semiconductor laser; Littrow; Littman
Cite as: Cui Q, Lei Y X, Chen Y Y, et al. Advances in wide-tuning and narrow-linewidth external-cavity diode lasers. Sci China Inf Sci, 2022, 65(8): 181401, doi: 10.1007/s11432-021-3454-7

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A low-fabrication-temperature, high-gain chip-scale waveguide amplifier
Wang, Bo; Zhou, Peiqi; Wang, Xingjun; He, Yandong
Sci China Inf Sci, 2022, 65(6): 162405
Keywords: photonic circuit integration; low fabrication temperature; high gain; rare earth material; waveguide amplifier
Cite as: Wang B, Zhou P Q, Wang X J, et al. A low-fabrication-temperature, high-gain chip-scale waveguide amplifier. Sci China Inf Sci, 2022, 65(6): 162405, doi: 10.1007/s11432-021-3360-0

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Global modes and coupled modes for integrated twin circular-side octagon microlasers
Yang, Ke; Yang, Yuede; Hao, Youzeng; Wu, Jiliang; Huang, Yongtao; Liu, Jiachen; Xiao, Jinlong; Huang, Yongzhen
Sci China Inf Sci, 2022, 65(2): 122403
Keywords: optical microcavity; semiconductor lasers; coupled cavity; lasing mode control; photonic integration
Cite as: Yang K, Yang Y D, Hao Y Z, et al. Global modes and coupled modes for integrated twin circular-side octagon microlasers. Sci China Inf Sci, 2022, 65(2): 122403, doi: 10.1007/s11432-020-3185-0

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A deep learning model enabled multi-event recognition for distributed optical fiber sensing
Li, Yujiao; Cao, Xiaomin; Ni, Wenhao; Yu, Kuanglu
Sci China Inf Sci, 2024, 67(3): 132404
Keywords: Φ-OTDR; event recognition; semi-supervised learning; mean teacher; MT-ACNN-SA-BiLSTM
Cite as: Li Y J, Cao X M, Ni W H, et al. A deep learning model enabled multi-event recognition for distributed optical fiber sensing. Sci China Inf Sci, 2024, 67(3): 132404, doi: 10.1007/s11432-023-3896-4

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High-performance broadband photodetector based on PtSe2/MoS2 heterojunction from visible to near-infrared region
Wang, Bin; Yuan, Jian; Che, Mengqi; Liu, Mingxiu; Zou, Yuting; An, Junru; Tan, Fan; Shi, Yaru; Zhang, Nan; Qi, Liujian; Li, Shaojuan
Sci China Inf Sci, 2024, 67(3): 132401
Keywords: photodetector; PtSe2/MoS2; heterojunction; visible to near infrared; high performance
Cite as: Wang B, Yuan J, Che M Q, et al. High-performance broadband photodetector based on PtSe2/MoS2 heterojunction from visible to near-infrared region. Sci China Inf Sci, 2024, 67(3): 132401, doi: 10.1007/s11432-023-3812-1

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Nonlinear neural computation in an integrated FP-SA spiking neuron subject to incoherent dual-wavelength optical pulse injections
Song, Ziwei; Xiang, Shuiying; Guo, Xingxing; Gao, Shuang; Gu, Biling; Zheng, Dianzhuang; Chen, Xiangfei; Shi, Yuechun
Sci China Inf Sci, 2023, 66(12): 229405
Keywords: Neuromorphic photonics; Nonlinear neural computation; Photonic spiking neuron; Fabry–Pérot laser with a saturable absorber; Dual-wavelength optical pulse injections
Cite as: Song Z W, Xiang S Y, Guo X X, et al. Nonlinear neural computation in an integrated FP-SA spiking neuron subject to incoherent dual-wavelength optical pulse injections. Sci China Inf Sci, 2023, 66(12): 229405, doi: 10.1007/s11432-022-3749-3

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Programmable complex pumping field induced color-on-demand random lasing in fiber-integrated microbelts for speckle free imaging
Shi, Xiaoyu; Shen, Kaiyue; Bian, Yaoxing; Song, Wanting; Ruan, Jun; Wang, Zhaona; Zhai, Tianrui
Sci China Inf Sci, 2023, 66(12): 222401
Keywords: random laser; multi-color; pump control; fiber-integrated; directional emission
Cite as: Shi X Y, Shen K Y, Bian Y X, et al. Programmable complex pumping field induced color-on-demand random lasing in fiber-integrated microbelts for speckle free imaging. Sci China Inf Sci, 2023, 66(12): 222401, doi: 10.1007/s11432-022-3642-8

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Proton radiation effects on high-speed silicon Mach-Zehnder modulators for space application
Han, Changhao; Hu, Zhaoyi; Tao, Yuansheng; Fu, Engang; He, Yandong; Yang, Fenghe; Qin, Jun; Wang, Xingjun
Sci China Inf Sci, 2022, 65(12): 222401
Keywords: silicon Mach-Zehnder modulator; proton radiation; space application; silicon photonics; optical communication
Cite as: Han C H, Hu Z Y, Tao Y S, et al. Proton radiation effects on high-speed silicon Mach-Zehnder modulators for space application. Sci China Inf Sci, 2022, 65(12): 222401, doi: 10.1007/s11432-022-3556-0

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Wideband chaos generation using a VCSEL with intensity modulation optical injection for random number generation
Huang, Yu; Gu, Shuangquan; Feng, Yuhang; Yang, Yigong; Xiang, Shuiying; Zhou, Pei; Li, Nianqiang
Sci China Inf Sci, 2024, 67(6): 169401
Keywords: VCSEL; wideband chaos; random number; intensity modulation optical injection; bandwidth
Cite as: Huang Y, Gu S Q, Feng Y H, et al. Wideband chaos generation using a VCSEL with intensity modulation optical injection for random number generation. Sci China Inf Sci, 2024, 67(6): 169401, doi: 10.1007/s11432-023-4002-6

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High-performance carbon-electrode-based self-powered optoelectronic synaptic devices
Huang, Wen; Xia, Xuwen; Zhang, Huixing; Guo, Tenglong; Hang, Pengjie; Li, Bin; Tang, Jiawei; Li, Biao; Zhu, Chen; Wang, Lei; Yang, Deren; Yu, Xuegong; Li, Xing'ao
Sci China Inf Sci, 2024, 67(5): 159403
Keywords: Self-powered synaptic device; Low-cost carbon; Energy consumption; Consistency; Stability
Cite as: Huang W, Xia X W, Zhang H X, et al. High-performance carbon-electrode-based self-powered optoelectronic synaptic devices. Sci China Inf Sci, 2024, 67(5): 159403, doi: 10.1007/s11432-023-3991-9

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Keywords: distributed optical fiber sensing; disturbance recognition; event recognition; deep learning; semi-supervised learning
Cite as: Li Y J, Hu L Q, Yu K L. Unleashing potentials with deep learning: decoding the complex events for distributed fiber optic sensing applications. Sci China Inf Sci, 2024, 67(5): 159402, doi: 10.1007/s11432-023-3985-y

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Wearable ultrasensitive and rapid human physiological monitoring based on microfiber Sagnac interferometer
Wang, Xin; Zhou, Hongyou; Chen, Meihua; He, Yongcheng; Zhang, Zhishen; Gan, Jiulin; Yang, Zhongmin
Sci China Inf Sci, 2024, 67(3): 132403
Keywords: flexible strain sensor; microfiber Sagnac interferometer; underwater detection
Cite as: Wang X, Zhou H Y, Chen M H, et al. Wearable ultrasensitive and rapid human physiological monitoring based on microfiber Sagnac interferometer. Sci China Inf Sci, 2024, 67(3): 132403, doi: 10.1007/s11432-023-3870-1

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Experimental demonstration of a photonic spiking neuron based on a DFB laser subject to side-mode optical pulse injection
Xiang, Shuiying; Gao, Shuang; Shi, Yuechun; Zhang, Yuna; Song, Ziwei; Guo, Xingxing; Zhang, Yahui; Ma, Yuxin; Chen, Xiangfei
Sci China Inf Sci, 2024, 67(3): 132402
Keywords: neuromorphic photonics; photonic spiking neuron; DFB laser; side-mode optical pulse injections
Cite as: Xiang S Y, Gao S, Shi Y C, et al. Experimental demonstration of a photonic spiking neuron based on a DFB laser subject to side-mode optical pulse injection. Sci China Inf Sci, 2024, 67(3): 132402, doi: 10.1007/s11432-023-3810-9

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Simultaneous microwave characterization of wafer-level optoelectronic transceiver chips based on photonic sampling and mapping
He, Yutong; Zou, Xinhai; Xu, Ying; Li, Zhihui; Cui, Naidi; Feng, Junbo; Zhang, Yali; Zhang, Zhiyao; Zhang, Shangjian; Liu, Yong; Zhu, Ninghua
Sci China Inf Sci, 2024, 67(2): 129402
Keywords: photonic integrated transceiver chip; wafer-level measurement; photonic sampling; photonic mapping; frequency response parameters
Cite as: He Y T, Zou X H, Xu Y, et al. Simultaneous microwave characterization of wafer-level optoelectronic transceiver chips based on photonic sampling and mapping. Sci China Inf Sci, 2024, 67(2): 129402, doi: 10.1007/s11432-023-3866-4

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Keywords: vertical-cavity surface-emitting laser; reservoir computing; neuromorphic photonics; time-delay system; information processing
Cite as: Guo X X, Xiang S Y, Cao X Y, et al. Experimental and numerical demonstration of hierarchical time-delay reservoir computing based on cascaded VCSELs with feedback and multiple injections. Sci China Inf Sci, 2024, 67(2): 122403, doi: 10.1007/s11432-022-3618-3

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Multi-carrier Tb/s silicon photonic coherent receiver
Wang, Zhen; Li, Xingfeng; Li, Jingchi; Shen, Jian; Zhang, Yong; Su, Yikai
Sci China Inf Sci, 2024, 67(1): 112405
Keywords: silicon photonics; optical receivers; coherent communication; wavelength-division-multiplexing; WDM; polarization-division-multiplexing; PDM
Cite as: Wang Z, Li X F, Li J C, et al. Multi-carrier Tb/s silicon photonic coherent receiver. Sci China Inf Sci, 2024, 67(1): 112405, doi: 10.1007/s11432-022-3742-2

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Breaking the responsivity-speed dilemma of a-GaOx photodetector by alternating gate modulation
Zhang, Zhongfang; Tan, Pengju; Hou, Xiaohu; Ma, Xiaolan; Ding, Mengfan; Yu, Shunjie; Xu, Guangwei; Zhao, Xiaolong; Long, Shibing
Sci China Inf Sci, 2023, 66(12): 229408
Keywords: gallium oxide; gate-tunable; alternating gate modulation; solar-blind photodetector; performance optimization
Cite as: Zhang Z F, Tan P J, Hou X H, et al. Breaking the responsivity-speed dilemma of a-GaOx photodetector by alternating gate modulation. Sci China Inf Sci, 2023, 66(12): 229408, doi: 10.1007/s11432-022-3754-x

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Human action recognition using a time-delayed photonic reservoir computing
Kai, Chao; Li, Pu; Yang, Yi; Wang, Bingjie; Shore, K. Alan; Wang, Yuncai
Sci China Inf Sci, 2023, 66(11): 219401
Keywords: semiconductor laser; photonic reservoir computing; human action recognition; neural network; computer vision
Cite as: Kai C, Li P, Yang Y, et al. Human action recognition using a time-delayed photonic reservoir computing. Sci China Inf Sci, 2023, 66(11): 219401, doi: 10.1007/s11432-022-3710-6

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High-speed optoelectronic devices
Luo, Yi; Sun, Changzheng; Xiong, Bing; Wang, Jian; Hao, Zhibiao; Han, Yanjun; Li, Hongtao; Wang, Lai
Sci China Inf Sci, 2023, 66(5): 150401
Keywords: optoelectronic devices; semiconductor lasers; optical modulators; photodetectors; integrated photonic circuits
Cite as: Luo Y, Sun C Z, Xiong B, et al. High-speed optoelectronic devices. Sci China Inf Sci, 2023, 66(5): 150401, doi: 10.1007/s11432-022-3669-5