MEMS

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Resolution limit of mode-localised sensors
Zhang, Zhao; Chang, Honglong
Sci China Inf Sci, 2021, 64(4): 142401
Keywords: MEMS; mode-localised sensors; resolution limit; 2-degree-of-freedom; higher degree-of-freedom
Cite as: Zhang Z, Chang H L. Resolution limit of mode-localised sensors. Sci China Inf Sci, 2021, 64(4): 142401, doi: 10.1007/s11432-020-2974-9

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Nanomechanics: emerging opportunities for future computing
Wang, Zenghui; Fang, Jiawei; Zhang, Pengcheng; Yang, Rui
Sci China Inf Sci, 2021, 64(10): 206401
Keywords: MEMS; NEMS; mechanical computing; logic devices; switches; resonators
Cite as: Wang Z H, Fang J W, Zhang P C, et al. Nanomechanics: emerging opportunities for future computing. Sci China Inf Sci, 2021, 64(10): 206401, doi: 10.1007/s11432-020-3241-9

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A high-efficient triboelectric-electromagnetic hybrid nanogenerator for vibration energy harvesting and wireless monitoring
He, Jian; Fan, Xueming; Zhao, Dongyang; Cui, Min; Han, Bing; Hou, Xiaojuan; Chou, Xiujian
Sci China Inf Sci, 2022, 65(4): 142401
Keywords: mechanical vibration energy; spring structure; triboelectric; electromagnetic; wireless monitoring system
Cite as: He J, Fan X M, Zhao D Y, et al. A high-efficient triboelectric-electromagnetic hybrid nanogenerator for vibration energy harvesting and wireless monitoring. Sci China Inf Sci, 2022, 65(4): 142401, doi: 10.1007/s11432-020-3081-4

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Mode-localized accelerometer with ultrahigh sensitivity
Kang, Hao; Ruan, Bing; Hao, Yongcun; Chang, Honglong
Sci China Inf Sci, 2022, 65(4): 142402
Keywords: mode localization; weakly coupled resonators; accelerometer; degree-of-freedom; microelectromechanical system
Cite as: Kang H, Ruan B, Hao Y C, et al. Mode-localized accelerometer with ultrahigh sensitivity. Sci China Inf Sci, 2022, 65(4): 142402, doi: 10.1007/s11432-020-3057-y

二维材料

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Graphene-based vertical thin film transistors
Liu, Liting; Liu, Yuan; Duan, Xiangfeng
Sci China Inf Sci, 2020, 63(10): 201401
Keywords: graphene electrode; vertical transistors; thin film transistors; van der Waals heterostructures
Cite as: Liu L T, Liu Y, Duan X F. Graphene-based vertical thin film transistors. Sci China Inf Sci, 2020, 63(10): 201401, doi: 10.1007/s11432-020-2806-8

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Complementary tunneling transistors based on WSe2/SnS2 van der Waals heterostructure
Jia, Rundong; Chen, Liang; Huang, Qianqian; Huang, Ru
Sci China Inf Sci, 2020, 63(4): 149401
Keywords: 2D materials; van der Waals heterostructure; tunnel barrier height; Complementary TFET; on/off ratio
Cite as: Jia R D, Chen L, Huang Q Q, et al. Complementary tunneling transistors based on WSe2/SnS2 van der Waals heterostructure. Sci China Inf Sci, 2020, 63(4): 149401, doi: 10.1007/s11432-019-9872-x

光学和光电子

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Silicon-based inorganic-organic hybrid optoelectronic synaptic devices simulating cross-modal learning
Li, Yayao; Wang, Yue; Yin, Lei; Huang, Wen; Peng, Wenbing; Zhu, Yiyuc; Wang, Kun; Yang, Deren; Pi, Xiaodong
Sci China Inf Sci, 2021, 64(6): 162401
Keywords: poly(3-hexylthiophene); silicon; optoelectronic synaptic devices; cross-modal learning; transistor
Cite as: Li Y Y, Wang Y, Yin L, et al. Silicon-based inorganic-organic hybrid optoelectronic synaptic devices simulating cross-modal learning. Sci China Inf Sci, 2021, 64(6): 162401, doi: 10.1007/s11432-020-3035-8

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Flexible plasmonic random laser for wearable humidity sensing
Tong, Junhua; Shi, Xiaoyu; Wang, Yu; Han, Liang; Zhai, Tianrui
Sci China Inf Sci, 2021, 64(12): 222401
Keywords: random lasers; humidity sensor; wearable; plasmonic
Cite as: Tong J H, Shi X Y, Wang Y, et al. Flexible plasmonic random laser for wearable humidity sensing. Sci China Inf Sci, 2021, 64(12): 222401, doi: 10.1007/s11432-020-3141-3

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Terahertz magneto-optical isolator based on graphene-silicon waveguide
Zhao, Dan; Fan, Fei; Li, Tengfei; Tan, Zhiyu; Cheng, Jierong; Chang, Shengjiang
Sci China Inf Sci, 2022, 65(6): 169401
Keywords: graphene; magneto-optical device; isolator; Waveguide; Terahertz
Cite as: Zhao D, Fan F, Li T F, et al. Terahertz magneto-optical isolator based on graphene-silicon waveguide. Sci China Inf Sci, 2022, 65(6): 169401, doi: 10.1007/s11432-020-3265-2

光学器件

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Narrow bandwidth fiber-optic spectral combs for renewable hydrogen detection
Cai, Shunshuo; Liu, Fu; Wang, Runlin; Xiao, Yongguang; Li, Kaiwei; Caucheteur, Christophe; Guo, Tuan
Sci China Inf Sci, 2020, 63(12): 222401
Keywords: fiber-optic sensing probe; tilted fiber Bragg grating; hydrogen measurement; palladium-gold alloy nanocoating
Cite as: Cai S S, Liu F, Wang R L, et al. Narrow bandwidth fiber-optic spectral combs for renewable hydrogen detection. Sci China Inf Sci, 2020, 63(12): 222401, doi: 10.1007/s11432-020-3058-2

Special Focus on Photonics in AI
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Automatic mode-locking fiber lasers: progress and perspectives
Pu, Guoqing; Zhang, Li; Hu, Weisheng; Yi, Lilin
Sci China Inf Sci, 2020, 63(6): 160404
Keywords: nonlinear polarization rotation; ultrashort pulses; automatic mode-locking; electrical polarization control; optimization algorithms; machine learning; time stretch
Cite as: Pu G Q, Zhang L, Hu W S, et al. Automatic mode-locking fiber lasers: progress and perspectives. Sci China Inf Sci, 2020, 63(6): 160404, doi: 10.1007/s11432-020-2883-0

Special Focus on Photonics in AI
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Keywords: neuromorphic photonics; graded-potential-signaling photonic neuron; pattern recognition; optical spike timing dependent plasticity; sound azimuth measurement
Cite as: Ma B W, Zou W W. Demonstration of a distributed feedback laser diode working as a graded-potential-signaling photonic neuron and its application to neuromorphic information processing. Sci China Inf Sci, 2020, 63(6): 160408, doi: 10.1007/s11432-020-2887-6

Special Focus on Photonics in AI
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Towards silicon photonic neural networks for artificial intelligence
Bai, Bowen; Shu, Haowen; Wang, Xingjun; Zou, Weiwen
Sci China Inf Sci, 2020, 63(6): 160403
Keywords: photonic neural networks; artificial intelligence; deep learning; photonic computing accelerator; silicon photonics
Cite as: Bai B W, Shu H W, Wang X J, et al. Towards silicon photonic neural networks for artificial intelligence. Sci China Inf Sci, 2020, 63(6): 160403, doi: 10.1007/s11432-020-2872-3

Special Focus on Photonics in AI
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Enhanced memory capacity of a neuromorphic reservoir computing system based on a VCSEL with double optical feedbacks
Guo, Xingxing; Xiang, Shuiying; Zhang, Yahui; Wen, Aijun; Hao, Yue
Sci China Inf Sci, 2020, 63(6): 160407
Keywords: vertical-cavity surface-emitting laser; nanophotonic reservoir computing; memory capacity; double feedback; information processing
Cite as: Guo X X, Xiang S Y, Zhang Y H, et al. Enhanced memory capacity of a neuromorphic reservoir computing system based on a VCSEL with double optical feedbacks. Sci China Inf Sci, 2020, 63(6): 160407, doi: 10.1007/s11432-020-2862-7

Special Focus on Photonics in AI
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Towards an intelligent photonic system
Zou, Weiwen; Ma, Bowen; Xu, Shaofu; Zou, Xiuting; Wang, Xingjun
Sci China Inf Sci, 2020, 63(6): 160401
Keywords: intelligent photonic system; deep learning; artificial intelligence; optical neural network; neuromorphic photonics
Cite as: Zou W W, Ma B W, Xu S F, et al. Towards an intelligent photonic system. Sci China Inf Sci, 2020, 63(6): 160401, doi: 10.1007/s11432-020-2863-y

Special Focus on Photonics in AI
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Real-time optical spike-timing dependent plasticity in a single VCSEL with dual-polarized pulsed optical injection
Xiang, Shuiying; Han, Yanan; Guo, Xingxing; Wen, Aijun; Han, Genquan; Hao, Yue
Sci China Inf Sci, 2020, 63(6): 160405
Keywords: vertical-cavity surface-emitting laser; optical spike-timing dependent plasticity; neuromorphic photonic system; dual polarized pulsed optical injections; artificial intelligent systems
Cite as: Xiang S Y, Han Y N, Guo X X, et al. Real-time optical spike-timing dependent plasticity in a single VCSEL with dual-polarized pulsed optical injection. Sci China Inf Sci, 2020, 63(6): 160405, doi: 10.1007/s11432-020-2820-y

Special Focus on Photonics in AI
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Deep belief network-hidden Markov model based nonlinear equalizer for VCSEL based optical interconnect
Tian, Fukui; Yang, Chuanchuan
Sci China Inf Sci, 2020, 63(6): 160406
Keywords: short-range optical interconnect; vertical cavity surface emitting laser (VCSEL); nonlinear equalizer; deep belief network (DBN); hidden Markov model (HMM)
Cite as: Tian F K, Yang C C. Deep belief network-hidden Markov model based nonlinear equalizer for VCSEL based optical interconnect. Sci China Inf Sci, 2020, 63(6): 160406, doi: 10.1007/s11432-019-2848-3

Special Focus on Photonics in AI
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Keywords: reservoir computing; integrated photonics; neural network; non-linearity
Cite as: Wu D C, Yi Y S, Zhang Y X. A brief review of integrated and passive photonic reservoir computing systems and an approach for achieving extra non-linearity in passive devices. Sci China Inf Sci, 2020, 63(6): 160402, doi: 10.1007/s11432-019-2837-0

Special Focus on Photonics in AI
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A design method for high fabrication tolerance integrated optical mode multiplexer
Shen, Bitao; Shu, Haowen; Zhou, Linjie; Wang, Xingjun
Sci China Inf Sci, 2020, 63(6): 160409
Keywords: mode multiplexer; directional coupler; taper structure; coupled-mode theory; genetic algorithm
Cite as: Shen B T, Shu H W, Zhou L J, et al. A design method for high fabrication tolerance integrated optical mode multiplexer. Sci China Inf Sci, 2020, 63(6): 160409, doi: 10.1007/s11432-020-2888-2

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Kerr frequency comb with varying FSR spacing based on Si3N4 micro-resonator
Ding, Yuedi; Gao, Yu; Zeng, Cheng; Zhu, Shanlin; Huang, Qingzhong; Wang, Yi; Huang, Ying; Xia, Jinsong
Sci China Inf Sci, 2020, 63(11): 212401
Keywords: feedback loop; free spectral range; silicon nitride; Kerr frequency combs; micro-ring resonator
Cite as: Ding Y D, Gao Y, Zeng C, et al. Kerr frequency comb with varying FSR spacing based on Si3N4 micro-resonator. Sci China Inf Sci, 2020, 63(11): 212401, doi: 10.1007/s11432-019-2662-x

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Optoelectronic convolutional neural networks based on time-stretch method
Zang, Yubin; Chen, Minghua; Yang, Sigang; Chen, Hongwei
Sci China Inf Sci, 2021, 64(2): 122401
Keywords: convolutional neural networks; time-stretch method; artificial intelligence
Cite as: Zang Y B, Chen M H, Yang S G, et al. Optoelectronic convolutional neural networks based on time-stretch method. Sci China Inf Sci, 2021, 64(2): 122401, doi: 10.1007/s11432-020-2998-1

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A modified supervised learning rule for training a photonic spiking neural network to recognize digital patterns
Zhang, Yahui; Xiang, Shuiying; Guo, Xingxing; Wen, Aijun; Hao, Yue
Sci China Inf Sci, 2021, 64(2): 122403
Keywords: vertical-cavity surface-emitting laser; modified supervised learning rule; optical spiking neural networks; learning system; pattern recognition
Cite as: Zhang Y H, Xiang S Y, Guo X X, et al. A modified supervised learning rule for training a photonic spiking neural network to recognize digital patterns. Sci China Inf Sci, 2021, 64(2): 122403, doi: 10.1007/s11432-020-3040-1

器件工艺和可靠性

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Vertical SnS2/Si heterostructure for tunnel diodes
Jia, Rundong; Huang, Qianqian; Huang, Ru
Sci China Inf Sci, 2020, 63(2): 122401
Keywords: 2D/3D heterostructure; SnS2/Si; tunnel barrier; tunnel diode; energy-efficient
Cite as: Jia R D, Huang Q Q, Huang R. Vertical SnS2/Si heterostructure for tunnel diodes. Sci China Inf Sci, 2020, 63(2): 122401, doi: 10.1007/s11432-019-9836-9

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Fully coupled electrothermal simulation of resistive random access memory (RRAM) array
Wang, Da-Wei; Zhao, Wen-Sheng; Chen, Wenchao; Xie, Hao; Yin, Wen-Yan
Sci China Inf Sci, 2020, 63(8): 189401
Keywords: RRAM; Electrothermal characteristics; DDM; Parallel simulator; Numerical scheme
Cite as: Wang D-W, Zhao W-S, Chen W C, et al. Fully coupled electrothermal simulation of resistive random access memory (RRAM) array. Sci China Inf Sci, 2020, 63(8): 189401, doi: 10.1007/s11432-019-2667-5

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Efficient 16 Boolean logic and arithmetic based on bipolar oxide memristors
Yuan, Rui; Ma, Mingyuan; Xu, Liying; Zhu, Zhenhua; Duan, Qingxi; Zhang, Teng; Zhu, Yu; Wang, Yu; Huang, Ru; Yang, Yuchao
Sci China Inf Sci, 2020, 63(10): 202401
Keywords: memristor; nonvolatile logic; in-memory computing; full adder; multiplier
Cite as: Yuan R, Ma M Y, Xu L Y, et al. Efficient 16 Boolean logic and arithmetic based on bipolar oxide memristors. Sci China Inf Sci, 2020, 63(10): 202401, doi: 10.1007/s11432-020-2866-0

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Layout dependence of total-ionizing-dose response in 65-nm bulk Si pMOSFET
Ren, Zhexuan; An, Xia; Li, Gensong; Zhang, Xing; Huang, Ru
Sci China Inf Sci, 2021, 64(2): 129401
Keywords: radiation; TID; LDE; 65nm; PMOS; SA
Cite as: Ren Z X, An X, Li G S, et al. Layout dependence of total-ionizing-dose response in 65-nm bulk Si pMOSFET. Sci China Inf Sci, 2021, 64(2): 129401, doi: 10.1007/s11432-019-2795-7

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Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks
Yang, Hong; Qi, Luwei; Zhang, Yanbo; Tang, Bo; Liu, Qianqian; Xu, Hao; Ma, Xueli; Wang, Xiaolei; Li, Yongliang; Yin, Huaxiang; Li, Junfeng; Zhu, Huilong; Zhao, Chao; Wang, Wenwu; Ye, Tianchun
Sci China Inf Sci, 2020, 63(2): 129403
Keywords: Titanium Nitride; Capping Layer; ALD TiN; FinFET; Positive Bias Temperature Instability; PBTI
Cite as: Yang H, Qi L W, Zhang Y B, et al. Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks. Sci China Inf Sci, 2020, 63(2): 129403, doi: 10.1007/s11432-019-9875-2

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A photomemory by selective-assembling hybrid porphyrin-silicon nanowire field-effect transistor
Chen, Gong; Yu, Bocheng; Li, Xiaokang; Dong, Xiaoqiao; Xu, Xiaoyan; Li, Zhihong; Huang, Ru; Li, Ming
Sci China Inf Sci, 2020, 63(6): 169401
Keywords: photomemory; porphyrin; silicon nanowire transistor; selective-assembling; CMOS-compatible
Cite as: Chen G, Yu B C, Li X K, et al. A photomemory by selective-assembling hybrid porphyrin-silicon nanowire field-effect transistor. Sci China Inf Sci, 2020, 63(6): 169401, doi: 10.1007/s11432-019-9842-3

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Reconfigurable vertical field-effect transistor based on graphene/MoTe2/graphite heterostructure
Wang, Cong; Pan, Chen; Liang, Shi-Jun; Cheng, Bin; Miao, Feng
Sci China Inf Sci, 2020, 63(10): 202402
Keywords: reconfigurable field-effect transistor; vertical transistor; graphene; MoTe2; van der Waals heterostructure; ambipolar transistor; dual-gate transistor
Cite as: Wang C, Pan C, Liang S-J, et al. Reconfigurable vertical field-effect transistor based on graphene/MoTe2/graphite heterostructure. Sci China Inf Sci, 2020, 63(10): 202402, doi: 10.1007/s11432-019-2778-8

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Effective gate length model for asymmetrical gate-all-around silicon nanowire transistors
Dong, Xiaoqiao; Li, Ming; Zhang, Wanrong; Yang, Yuancheng; Chen, Gong; Sun, Shuang; Wang, Jianing; Xu, Xiaoyan; An, Xia
Sci China Inf Sci, 2020, 63(10): 209402
Keywords: gate-all-around; nanowire; effective gate length; effective model; asymmetrical
Cite as: Dong X Q, Li M, Zhang W R, et al. Effective gate length model for asymmetrical gate-all-around silicon nanowire transistors. Sci China Inf Sci, 2020, 63(10): 209402, doi: 10.1007/s11432-019-2658-x

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High-quality and large-grain epi-like Si film by NiSi2-seed initiated lateral epitaxial crystallization (SILEC)
Yang, Yuancheng; Zhang, Baotong; Dong, Xiaoqiao; Li, Xiaokang; Sun, Shuang; Cai, Qifeng; Bi, Ran; Xu, Xiaoyan; Li, Ming; Huang, Ru
Sci China Inf Sci, 2020, 63(12): 229401
Keywords: 3D monolithic integration; 3D-MI; NiSi2-seed; low-temperature crystallization; epitaxial; barrier layer; metal contamination
Cite as: Yang Y C, Zhang B T, Dong X Q, et al. High-quality and large-grain epi-like Si film by NiSi2-seed initiated lateral epitaxial crystallization (SILEC). Sci China Inf Sci, 2020, 63(12): 229401, doi: 10.1007/s11432-019-2700-1

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Keywords: Subthreshold Swing; Band-to-band tunneling; BTBT; Adaptive bandgap engineering; Junction depleted-modulation; Tunnel field-effect transistor
Cite as: Zhao Y, Huang Q Q, Huang R. A novel tunnel FET design through hybrid modulation with optimized subthreshold characteristics and high drive capability. Sci China Inf Sci, 2020, 63(2): 129402, doi: 10.1007/s11432-019-9874-9

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Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors
Tian, Guoliang; Bi, Jinshun; Xu, Gaobo; Xi, Kai; Yang, Xueqin; Sandip, Majumdar; Yin, Huaxiang; Xu, Qiuxia; Wang, Wenwu
Sci China Inf Sci, 2020, 63(12): 229403
Keywords: SOI double-gate FeTFET; single-event-transient; heavy ion; numerical simulation; vertical tunneling
Cite as: Tian G L, Bi J S, Xu G B, et al. Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors. Sci China Inf Sci, 2020, 63(12): 229403, doi: 10.1007/s11432-019-2716-5

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Design space for stabilized negative capacitance in HfO2 ferroelectric-dielectric stacks based on phase field simulation
Chang, Pengying; Du, Gang; Liu, Xiaoyan
Sci China Inf Sci, 2021, 64(2): 122402
Keywords: ferroelectric; polarization dynamics; hysteresis; negative capacitance; depolarization field
Cite as: Chang P Y, Du G, Liu X Y. Design space for stabilized negative capacitance in HfO2 ferroelectric-dielectric stacks based on phase field simulation. Sci China Inf Sci, 2021, 64(2): 122402, doi: 10.1007/s11432-020-3005-8

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A bidirectional threshold switching selector with a symmetric multilayer structure
Li, Qingjiang; Li, Kun; Wang, Yongzhou; Liu, Sen; Song, Bing
Sci China Inf Sci, 2021, 64(4): 142402
Keywords: threshold switching selector; resistive random access memory; leakage current; programmable metallization cell
Cite as: Li Q J, Li K, Wang Y Z, et al. A bidirectional threshold switching selector with a symmetric multilayer structure. Sci China Inf Sci, 2021, 64(4): 142402, doi: 10.1007/s11432-020-2960-x

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High mobility germanium-on-insulator p-channel FinFETs
Liu, Huan; Han, Genquan; Zhou, Jiuren; Liu, Yan; Hao, Yue
Sci China Inf Sci, 2021, 64(4): 149402
Keywords: ZrO2; High Mobility; P-Channel; FinFET; Germanium on Insulator
Cite as: Liu H, Han G Q, Zhou J R, et al. High mobility germanium-on-insulator p-channel FinFETs. Sci China Inf Sci, 2021, 64(4): 149402, doi: 10.1007/s11432-019-2846-9

新器件

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Multi level cell (MLC) in 3D crosspoint phase change memory array
Gong, Nanbo
Sci China Inf Sci, 2021, 64(6): 166401
Keywords: memory; PCM; MLC; 1T1R; OTS-PCM
Cite as: Gong N. Multi level cell (MLC) in 3D crosspoint phase change memory array. Sci China Inf Sci, 2021, 64(6): 166401, doi: 10.1007/s11432-021-3184-5

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Tuning the pinning direction of giant magnetoresistive sensor by post annealing process
Cao, Zhiqiang; Wei, Yiming; Chen, Wenjing; Yan, Shaohua; Lin, Lin; Li, Zhi; Wang, Lezhi; Yang, Huaiwen; Leng, Qunwen; Zhao, Weisheng
Sci China Inf Sci, 2021, 64(6): 162402
Keywords: GMR sensor; full Wheatstone bridge; annealing; simulation
Cite as: Cao Z Q, Wei Y M, Chen W J, et al. Tuning the pinning direction of giant magnetoresistive sensor by post annealing process. Sci China Inf Sci, 2021, 64(6): 162402, doi: 10.1007/s11432-020-2959-6

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Reconfigurable logic circuit design for stateful Boolean logic computing
Luo, Li; Dong, Zhekang; Hu, Xiaofang; Wang, Lidan; Duan, Shukai
Sci China Inf Sci, 2021, 64(8): 189401
Keywords: memristor; reconfigurable logic circuit; stateful Boolean logic; logic design; logic circuit
Cite as: Luo L, Dong Z K, Hu X F, et al. Reconfigurable logic circuit design for stateful Boolean logic computing. Sci China Inf Sci, 2021, 64(8): 189401, doi: 10.1007/s11432-019-2938-8

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Controlled nano-cracking actuated by an in-plane voltage
Luo, Qiang; Guo, Zhe; Zhang, Shuai; Yang, Xiaofei; Zou, Xuecheng; Hong, Jeongmin; You, Long
Sci China Inf Sci, 2021, 64(8): 189403
Keywords: Nanoelectromechanical switch; ferroelectric nano-cracking; non-volatile switching; complementary switching; reconfigurable logic
Cite as: Luo Q, Guo Z, Zhang S, et al. Controlled nano-cracking actuated by an in-plane voltage. Sci China Inf Sci, 2021, 64(8): 189403, doi: 10.1007/s11432-020-3098-x

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Recent progress of integrated circuits and optoelectronic chips
Hao Y, Xiang S Y, Han G Q, et al
Sci China Inf Sci, 2021, 64(10): 201401
Keywords: integrated circuit; semiconductor science and technology; optoelectronic device and chip; photonic integrated circuit; wide bandgap semiconductors; silicon photonics; hybrid integration; quantum chip; integrated microwave photonic; photonic neural computing
Cite as: Hao Y, Xiang S Y, Han G Q, et al. Recent progress of integrated circuits and optoelectronic chips. Sci China Inf Sci, 2021, 64(10): 201401, doi: 10.1007/s11432-021-3235-7

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Carbon nanotube-based CMOS transistors and integrated circuits
Xie, Yunong; Zhang, Zhiyong
Sci China Inf Sci, 2021, 64(10): 201402
Keywords: carbon nanotube; transistor; integrated circuit; scaling; nanoelectronics
Cite as: Xie Y N, Zhang Z Y. Carbon nanotube-based CMOS transistors and integrated circuits. Sci China Inf Sci, 2021, 64(10): 201402, doi: 10.1007/s11432-021-3271-8

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Nano-scaled transistor reliability characterization at nano-second regime
Cheng, Ran; Sun, Ying; Qu, Yiming; Liu, Wei; Liu, Fanyu; Gao, Jianfeng; Xu, Nuo; Chen, Bing
Sci China Inf Sci, 2021, 64(10): 209401
Keywords: FDSOI; Self-heating effect; Reliability; PRBS; Vth shift
Cite as: Cheng R, Sun Y, Qu Y M, et al. Nano-scaled transistor reliability characterization at nano-second regime. Sci China Inf Sci, 2021, 64(10): 209401, doi: 10.1007/s11432-020-3088-3

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Design of a high-performance 12T SRAM cell for single event upset tolerance
Qi, Chunhua; Zhang, Yanqing; Ma, Guoliang; Liu, Chaoming; Wang, Tianqi; Xiao, Liyi; Huo, Mingxue; Zhai, Guofu
Sci China Inf Sci, 2021, 64(11): 219401
Keywords: Reliability; single event upset; SRAM; radiation hardened by design; single event effect
Cite as: Qi C H, Zhang Y Q, Ma G L, et al. Design of a high-performance 12T SRAM cell for single event upset tolerance. Sci China Inf Sci, 2021, 64(11): 219401, doi: 10.1007/s11432-020-3123-2

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A unified hybrid compact model of β-Ga2O3 Schottky barrier diodes for mixer and rectifier applications
Zhou, Kai; He, Qiming; Jian, Guangzhong; Xu, Guangwei; Wu, Feihong; Li, Yao; Hu, Zhuangzhuang; Feng, Qian; Zhao, Xiaolong; Long, Shibing
Sci China Inf Sci, 2021, 64(11): 219403
Keywords: β-Ga2O3 SBDs; compact model; model verification; mixer; rectifier
Cite as: Zhou K, He Q M, Jian G Z, et al. A unified hybrid compact model of β-Ga2O3 Schottky barrier diodes for mixer and rectifier applications. Sci China Inf Sci, 2021, 64(11): 219403, doi: 10.1007/s11432-021-3224-2

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A physics-based electromigration reliability model for interconnects lifetime prediction
Cai L L, Chen W Y, Kang J F, et al
Sci China Inf Sci, 2021, 64(11): 219404
Keywords: electromigration; modeling; interconnects; time-to-failure; reliability
Cite as: Cai L L, Chen W Y, Kang J F, et al. A physics-based electromigration reliability model for interconnects lifetime prediction. Sci China Inf Sci, 2021, 64(11): 219404, doi: 10.1007/s11432-020-3140-4

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SEU sensitivity and large spacing TMR efficiency of Kintex-7 and Virtex-7 FPGAs
Cai, Chang; Ning, Bingxu; Fan, Xue; Liu, Tianqi; Ke, Lingyun; Chen, Gengsheng; Yu, Jian; He, Ze; Xu, Liewei; Liu, Jie
Sci China Inf Sci, 2022, 65(2): 129402
Keywords: Microelectronics; Radiation effects; Space electronics; Radiation tolerance; FPGA; Reliability
Cite as: Cai C, Ning B X, Fan X, et al. SEU sensitivity and large spacing TMR efficiency of Kintex-7 and Virtex-7 FPGAs. Sci China Inf Sci, 2022, 65(2): 129402, doi: 10.1007/s11432-020-3169-x

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Effects of non-fatal electrostatic discharge on the threshold voltage degradation in nano CMOS devices
Wong, Hei; Dong, Shurong; Chen, Zehua
Sci China Inf Sci, 2022, 65(2): 129403
Keywords: Nano CMOS; ESD; Reliability; Hot-carrier; Charge trapping
Cite as: Wong H, Dong S R, Chen Z H. Effects of non-fatal electrostatic discharge on the threshold voltage degradation in nano CMOS devices. Sci China Inf Sci, 2022, 65(2): 129403, doi: 10.1007/s11432-020-3197-8

新型存储技术

Special Focus on Near-memory and In-memory Computing
REVIEW Website SpringerLink Google Scholar Cited in SCI: 1

A survey of in-spin transfer torque MRAM computing
Cai, Hao; Liu, Bo; Chen, Juntong; Naviner, Lirida; Zhou, Yongliang; Wang, Zhen; Yang, Jun
Sci China Inf Sci, 2021, 64(6): 160402
Keywords: spin-transfer torque-magnetoresistive random access memory; in-memory computing; magnetic tunnel junction; analog computing; nonvolatile memory; Boolean logic; neural network
Cite as: Cai H, Liu B, Chen J T, et al. A survey of in-spin transfer torque MRAM computing. Sci China Inf Sci, 2021, 64(6): 160402, doi: 10.1007/s11432-021-3220-0

Special Focus on Near-memory and In-memory Computing
RESEARCH PAPER Website SpringerLink Google Scholar Cited in SCI: 1

Array-level boosting method with spatial extended allocation to improve the accuracy of memristor based computing-in-memory chips
Zhang, Wenqiang; Gao, Bin; Yao, Peng; Tang, Jianshi; Qian, He; Wu, Huaqiang
Sci China Inf Sci, 2021, 64(6): 160406
Keywords: memristor; computing-in-memory; array-level boosting; neuromorphic computing; RRAM
Cite as: Zhang W Q, Gao B, Yao P, et al. Array-level boosting method with spatial extended allocation to improve the accuracy of memristor based computing-in-memory chips. Sci China Inf Sci, 2021, 64(6): 160406, doi: 10.1007/s11432-020-3198-9

Special Focus on Near-memory and In-memory Computing
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Keywords: graph processing; machine learning acceleration; ReRAM; HMC; HBM
Cite as: Qian X H. Graph processing and machine learning architectures with emerging memory technologies: a survey. Sci China Inf Sci, 2021, 64(6): 160401, doi: 10.1007/s11432-020-3219-6

Special Focus on Near-memory and In-memory Computing
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Energy-efficient computing-in-memory architecture for AI processor: device, circuit, architecture perspective
Chang, Liang; Li, Chenglong; Zhang, Zhaomin; Xiao, Jianbiao; Liu, Qingsong; Zhu, Zhen; Li, Weihang; Zhu, Zixuan; Yang, Siqi; Zhou, Jun
Sci China Inf Sci, 2021, 64(6): 160403
Keywords: energy efficiency; computing-in-memory; non-volatile memory; test demonstrators; AI processor
Cite as: Chang L, Li C L, Zhang Z M, et al. Energy-efficient computing-in-memory architecture for AI processor: device, circuit, architecture perspective. Sci China Inf Sci, 2021, 64(6): 160403, doi: 10.1007/s11432-021-3234-0

Special Focus on Near-memory and In-memory Computing
PROGRESS Website SpringerLink Google Scholar Cited in SCI: 0

Breaking the von Neumann bottleneck: architecture-level processing-in-memory technology
Zou, Xingqi; Xu, Sheng; Chen, Xiaoming; Yan, Liang; Han, Yinhe
Sci China Inf Sci, 2021, 64(6): 160404
Keywords: processing-in-memory (PIM); von Neumann bottleneck; memory wall; PIM simulator; architecture-level PIM
Cite as: Zou X Q, Xu S, Chen X M, et al. Breaking the von Neumann bottleneck: architecture-level processing-in-memory technology. Sci China Inf Sci, 2021, 64(6): 160404, doi: 10.1007/s11432-020-3227-1

Special Focus on Near-memory and In-memory Computing
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Neural connectivity inference with spike-timing dependent plasticity network
Moon, John; Wu, Yuting; Zhu, Xiaojian; Lu, Wei D.
Sci China Inf Sci, 2021, 64(6): 160405
Keywords: spike-timing dependent plasticity; neural connectivity; memristor; online learning; second-order memristor
Cite as: Moon J, Wu Y T, Zhu X J, et al. Neural connectivity inference with spike-timing dependent plasticity network. Sci China Inf Sci, 2021, 64(6): 160405, doi: 10.1007/s11432-021-3217-0

Special Focus on Near-memory and In-memory Computing
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NAS4RRAM: neural network architecture search for inference on RRAM-based accelerators
Yuan, Zhihang; Liu, Jingze; Li, Xingchen; Yan, Longhao; Chen, Haoxiang; Wu, Bingzhe; Yang, Yuchao; Sun, Guangyu
Sci China Inf Sci, 2021, 64(6): 160407
Keywords: network architecture search (NAS); neural networks; RRAM-based accelerator; hardware noise; quantization
Cite as: Yuan Z H, Liu J Z, Li X C, et al. NAS4RRAM: neural network architecture search for inference on RRAM-based accelerators. Sci China Inf Sci, 2021, 64(6): 160407, doi: 10.1007/s11432-020-3245-7

Special Focus on Near-memory and In-memory Computing
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Bayesian neural network enhancing reliability against conductance drift for memristor neural networks
Zhou, Yue; Hu, Xiaofang; Wang, Lidan; Duan, Shukai
Sci China Inf Sci, 2021, 64(6): 160408
Keywords: conductance drift; neuromorphic computing; Bayesian neural network; memristor crossbar array; network reliability
Cite as: Zhou Y, Hu X F, Wang L D, et al. Bayesian neural network enhancing reliability against conductance drift for memristor neural networks. Sci China Inf Sci, 2021, 64(6): 160408, doi: 10.1007/s11432-020-3204-y

Special Focus on Near-memory and In-memory Computing
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Towards efficient allocation of graph convolutional networks on hybrid computation-in-memory architecture
Chen, Jiaxian; Lin, Guanquan; Chen, Jiexin; Wang, Yi
Sci China Inf Sci, 2021, 64(6): 160409
Keywords: computation-in-memory; graph convolutional networks; hybrid architecture; scheduling; inference; accelerator
Cite as: Chen J X, Lin G Q, Chen J X, et al. Towards efficient allocation of graph convolutional networks on hybrid computation-in-memory architecture. Sci China Inf Sci, 2021, 64(6): 160409, doi: 10.1007/s11432-020-3248-y

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Flash memory based computing-in-memory system to solve partial differential equations
Feng, Yang; Wang, Fei; Zhan, Xuepeng; Li, Yuan; Chen, Jiezhi
Sci China Inf Sci, 2021, 64(6): 169401
Keywords: Jacobi iteration; Computing-in-memory; Flash memory; Partial differential equation; Spice simulation
Cite as: Feng Y, Wang F, Zhan X P, et al. Flash memory based computing-in-memory system to solve partial differential equations. Sci China Inf Sci, 2021, 64(6): 169401, doi: 10.1007/s11432-020-2942-2

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Investigation of weight updating modes on oxide-based resistive switching memory synapse towards neuromorphic computing applications
Ding, Qingting; Gong, Tiancheng; Yu, Jie; Xu, Xiaoxin; Li, Xiaoyan; Lv, Hangbing; Yang, Jianguo; Luo, Qing; Yuan, Peng; Zhang, Feng; Liu, Ming
Sci China Inf Sci, 2021, 64(11): 219402
Keywords: Gate Voltage Ramping; GVR; Constant Drain Voltage; CDV; Time Lag Plot; RTN; neuromorphic computing
Cite as: Ding Q T, Gong T C, Yu J, et al. . Investigation of weight updating modes on oxide-based resistive switching memory synapse towards neuromorphic computing applications. Sci China Inf Sci, 2021, 64(11): 219402, doi: 10.1007/s11432-020-3127-x

新材料

Special Focus on Two-Dimensional Materials and Device Applications
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Filling the gap: thermal properties and device applications of graphene
Wu, Rui; Zhu, Rui-Zhi; Zhao, Shi-Hui; Zhang, Gang; Tian, He; Ren, Tian-Ling
Sci China Inf Sci, 2021, 64(4): 140401
Keywords: graphene; thermal properties; device application; thermal conductivity; 2D material
Cite as: Wu R, Zhu R-Z, Zhao S-H, et al. Filling the gap: thermal properties and device applications of graphene. Sci China Inf Sci, 2021, 64(4): 140401, doi: 10.1007/s11432-020-3151-5

Special Focus on Two-Dimensional Materials and Device Applications
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Properties and photodetector applications of two-dimensional black arsenic phosphorus and black phosphorus
Han, Ruyue; Feng, Shun; Sun, Dong-Ming; Cheng, Hui-Ming
Sci China Inf Sci, 2021, 64(4): 140402
Keywords: black arsenic phosphorus; crystal structure; optical property; electrical property; photodetector
Cite as: Han R Y, Feng S, Sun D-M, et al. Properties and photodetector applications of two-dimensional black arsenic phosphorus and black phosphorus. Sci China Inf Sci, 2021, 64(4): 140402, doi: 10.1007/s11432-020-3172-1

Special Focus on Two-Dimensional Materials and Device Applications
RESEARCH PAPER Website SpringerLink Google Scholar Homepage Cited in SCI: 0

Efficient graphene in-plane homogeneous p-n-p junction based infrared photodetectors with low dark current
An, Junru; Sun, Tian; Wang, Bin; Xu, Jianlong; Li, Shaojuan
Sci China Inf Sci, 2021, 64(4): 140403
Keywords: infrared photodetector; graphene; p-n-p junction; dark current; photoresponse
Cite as: An J R, Sun T, Wang B, et al. Efficient graphene in-plane homogeneous p-n-p junction based infrared photodetectors with low dark current. Sci China Inf Sci, 2021, 64(4): 140403, doi: 10.1007/s11432-020-3179-9

Special Focus on Two-Dimensional Materials and Device Applications
RESEARCH PAPER Website SpringerLink Google Scholar Supplementary Homepage Cited in SCI: 0

Bi2O2Se/BP van der Waals heterojunction for high performance broadband photodetector
Liu, Xing; Wang, Wenhui; Yang, Fang; Feng, Shaopeng; Hu, Zhenliang; Lu, Junpeng; Ni, Zhenhua
Sci China Inf Sci, 2021, 64(4): 140404
Keywords: Bi2O2Se; BP; van der Waals heterojunction; broadband photodetector; low dark current; narrow bandgap
Cite as: Liu X, Wang W H, Yang F, et al. Bi2O2Se/BP van der Waals heterojunction for high performance broadband photodetector. Sci China Inf Sci, 2021, 64(4): 140404, doi: 10.1007/s11432-020-3101-1

Special Focus on Two-Dimensional Materials and Device Applications
RESEARCH PAPER Website SpringerLink Google Scholar Homepage Cited in SCI: 0

Optical emission enhancement of bent InSe thin films
Xie, Jiahao; Zhang, Lijun
Sci China Inf Sci, 2021, 64(4): 140405
Keywords: InSe; enhanced luminescence; 2D semiconductor; optical transition; optical anisotropy
Cite as: Xie J H, Zhang L J. Optical emission enhancement of bent InSe thin films. Sci China Inf Sci, 2021, 64(4): 140405, doi: 10.1007/s11432-020-3149-2

Special Focus on Two-Dimensional Materials and Device Applications
RESEARCH PAPER Website SpringerLink Google Scholar Homepage Cited in SCI: 0

Raman spectra evidence for the covalent-like quasi-bonding between exfoliated MoS2 and Au films
Huang, Xinyu; Zhang, Lei; Liu, Liwei; Qin, Yang; Fu, Qiang; Wu, Qiong; Yang, Rong; Lv, Jun-Peng; Ni, Zhenhua; Liu, Lei; Ji, Wei; Wang, Yeliang; Zhou, Xingjiang; Huang, Yuan
Sci China Inf Sci, 2021, 64(4): 140406
Keywords: MoS2; Raman spectroscopy; gold-enhanced mechanical exfoliation; low-frequency raman modes; covalent-like quasi-bonding
Cite as: Huang X Y, Zhang L, Liu L W, et al. Raman spectra evidence for the covalent-like quasi-bonding between exfoliated MoS2 and Au films. Sci China Inf Sci, 2021, 64(4): 140406, doi: 10.1007/s11432-020-3173-9

Special Focus on Two-Dimensional Materials and Device Applications
RESEARCH PAPER Website SpringerLink Google Scholar Supplementary Homepage Cited in SCI: 0

Interface engineering of ferroelectric-gated MoS2 phototransistor
Wu, Shuaiqin; Wang, Xudong; Jiang, Wei; Tu, Luqi; Chen, Yan; Liu, Jingjing; Lin, Tie; Shen, Hong; Ge, Jun; Hu, Weida; Meng, Xiangjian; Wang, Jianlu; Chu, Junhao
Sci China Inf Sci, 2021, 64(4): 140407
Keywords: 2D materials; ferroelectrics; MoS2 phototransistors; h-BN; interface engineering
Cite as: Wu S Q, Wang X D, Jiang W, et al. Interface engineering of ferroelectric-gated MoS2 phototransistor. Sci China Inf Sci, 2021, 64(4): 140407, doi: 10.1007/s11432-020-3180-5

Special Focus on Two-Dimensional Materials and Device Applications
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A compact model for transition metal dichalcogenide field effect transistors with effects of interface traps
Xu, Yifei; Li, Weisheng; Fan, Dongxu; Shi, Yi; Qiu, Hao; Wang, Xinran
Sci China Inf Sci, 2021, 64(4): 140408
Keywords: compact model; field effect transistor; transition metal dichalcogenide; MoS2; interface traps
Cite as: Xu Y F, Li W S, Fan D X, et al. A compact model for transition metal dichalcogenide field effect transistors with effects of interface traps. Sci China Inf Sci, 2021, 64(4): 140408, doi: 10.1007/s11432-020-3155-7

电路和系统

RESEARCH PAPER Website SpringerLink Google Scholar Cited in SCI: 4

Deterministic conversion rule for CNNs to efficient spiking convolutional neural networks
Yang, Xu; Zhang, Zhongxing; Zhu, Wenping; Yu, Shuangming; Liu, Liyuan; Wu, Nanjian
Sci China Inf Sci, 2020, 63(2): 122402
Keywords: convolutional neural networks (CNN); spiking neural networks (SNN); image classification; conversion rule; noise robustness; neuromorphic hardware
Cite as: Yang X, Zhang Z X, Zhu W P, et al. Deterministic conversion rule for CNNs to efficient spiking convolutional neural networks. Sci China Inf Sci, 2020, 63(2): 122402, doi: 10.1007/s11432-019-1468-0

LETTER Website SpringerLink Google Scholar Cited in SCI: 4

A digital signal processor (DSP)-based system for embedded continuous-time cuffless blood pressure monitoring using single-channel PPG signal
Zhang, Qirui; Xie, Qingsong; Duan, Kefeng; Liang, Bo; Wang, Min; Wang, Guoxing
Sci China Inf Sci, 2020, 63(4): 149402
Keywords: photoplethysmogram; cuffless blood pressure monitoring; digital signal processor; baseline wandering; morphological filter; least squares support vector machine
Cite as: Zhang Q R, Xie Q S, Duan K F, et al. A digital signal processor (DSP)-based system for embedded continuous-time cuffless blood pressure monitoring using single-channel PPG signal. Sci China Inf Sci, 2020, 63(4): 149402, doi: 10.1007/s11432-018-9719-9

LETTER Website SpringerLink Google Scholar Cited in SCI: 3

Golden chip free Trojan detection leveraging probabilistic neural network with genetic algorithm applied in the training phase
Liu, Yanjiang; He, Jiaji; Ma, Haocheng; Zhao, Yiqiang
Sci China Inf Sci, 2020, 63(2): 129401
Keywords: hardware Trojan; integrated circuit; golden chip-free Trojan detection; genetic algorithm; probabilistic neural network
Cite as: Liu Y J, He J J, Ma H C, et al. Golden chip free Trojan detection leveraging probabilistic neural network with genetic algorithm applied in the training phase. Sci China Inf Sci, 2020, 63(2): 129401, doi: 10.1007/s11432-019-9803-8

LETTER Website SpringerLink Google Scholar Cited in SCI: 1

Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design
Wang, Jianjian; Bi, Jinshun; Liu, Gang; Bai, Hua; Xi, Kai; Li, Bo; Majumdar, Sandip; Ji, Lanlong; Liu, Ming; Zhang, Zhangang
Sci China Inf Sci, 2021, 64(4): 149401
Keywords: SEE; nvSRAM; Hf0.5Zr0.5O2; ferroelectric capacitor; LET; remnant polarization; coercive voltage
Cite as: Wang J J, Bi J S, Liu G, et al. Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design. Sci China Inf Sci, 2021, 64(4): 149401, doi: 10.1007/s11432-019-2854-9

RESEARCH PAPER Website SpringerLink Google Scholar Cited in SCI: 1

A robust QRS detection and accurate R-peak identification algorithm for wearable ECG sensors
Zhao, Kai; Li, Yongfu; Wang, Guoxing; Pu, Yu; Lian, Yong
Sci China Inf Sci, 2021, 64(8): 182401
Keywords: signal processing; QRS detection; R-peak detection; wearable ECG sensors; bilateral threshold
Cite as: Zhao K, Li Y F, Wang G X, et al. A robust QRS detection and accurate R-peak identification algorithm for wearable ECG sensors. Sci China Inf Sci, 2021, 64(8): 182401, doi: 10.1007/s11432-020-3150-2

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A synthesis method for logic circuits in RRAM arrays
Cui, Xiaole; Ma, Xiao; Wei, Feng; Cui, Xiaoxin
Sci China Inf Sci, 2020, 63(10): 209401
Keywords: RRAM; IMPLY logic; row based gate; column based gate; circuit synthesis
Cite as: Cui X L, Ma X, Wei F, et al. A synthesis method for logic circuits in RRAM arrays. Sci China Inf Sci, 2020, 63(10): 209401, doi: 10.1007/s11432-019-2684-9

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A 143.2-168.8-GHz signal source with 5.6 dBm peak output power in a 130-nm SiGe BiCMOS process
Zhou, Peigen; Chen, Jixin; Yan, Pinpin; Peng, Zhigang; Hou, Debin; Chen, Zhe; Hong, Wei
Sci China Inf Sci, 2020, 63(12): 229402
Keywords: Broadband; D-Band; Frequency Doubler; SiGe BiCMOS; Signal Source; Terahertz; VCO
Cite as: Zhou P G, Chen J X, Yan P P, et al. A 143.2-168.8-GHz signal source with 5.6 dBm peak output power in a 130-nm SiGe BiCMOS process. Sci China Inf Sci, 2020, 63(12): 229402, doi: 10.1007/s11432-019-2732-1

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A 530 nA quiescent current low-dropout regulator with embedded reference for wake-up receivers
Gao, Shaoquan; Jiang, Hanjun; Li, Fule; Wang, Zhihua
Sci China Inf Sci, 2020, 63(12): 229404
Keywords: LDO; low quiescent current; voltage reference; wake-up receiver; adaptive biasing
Cite as: Gao S Q, Jiang H J, Li F L, et al. A 530 nA quiescent current low-dropout regulator with embedded reference for wake-up receivers. Sci China Inf Sci, 2020, 63(12): 229404, doi: 10.1007/s11432-019-2715-1

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Detection of the interictal epileptic discharges based on wavelet bispectrum interaction and recurrent neural network
Sabor, Nabil; Li, Yongfu; Zhang, Zhe; Pu, Yu; Wang, Guoxing; Lian, Yong
Sci China Inf Sci, 2021, 64(6): 162403
Keywords: interictal epileptic discharges; epilepsy; discrete wavelet transform; wavelet bispectrum; long short-term memory; recurrent neural network
Cite as: Sabor N, Li Y F, Zhang Z, et al. Detection of the interictal epileptic discharges based on wavelet bispectrum interaction and recurrent neural network. Sci China Inf Sci, 2021, 64(6): 162403, doi: 10.1007/s11432-020-3100-8

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Fast substitution-box evaluation algorithm and its efficient masking scheme for block ciphers
Huang, Hai; Liu, Leibo; Zhu, Min; Yin, Shouyi; Wei, Shaojun
Sci China Inf Sci, 2021, 64(8): 189402
Keywords: higher-order masking; hardware security; block ciphers; power function evaluation; Substitution-Box
Cite as: Huang H, Liu L B, Zhu M, et al. Fast substitution-box evaluation algorithm and its efficient masking scheme for block ciphers. Sci China Inf Sci, 2021, 64(8): 189402, doi: 10.1007/s11432-020-3089-9

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Implementation of a concentration-controlled chemical clock
Fang, Chongzhou; Ge, Lulu; Tan, Xiaosi; Shen, Ziyuan; Zhang, Zaichen; You, Xiaohu; Zhang, Chuan
Sci China Inf Sci, 2021, 64(12): 229401
Keywords: Chemical clock; DNA strand displacement; Mass action kinetics; Molecular computing; Concentration
Cite as: Fang C Z, Ge L L, Tan X S, et al. Implementation of a concentration-controlled chemical clock. Sci China Inf Sci, 2021, 64(12): 229401, doi: 10.1007/s11432-019-2868-6

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A variable threshold visual sensing and image reconstruction method based on pulse sequence
Xu, Jiangtao; Lin, Peng; Gao, Zhiyuan; Nie, Kaiming; Xu, Liang
Sci China Inf Sci, 2022, 65(2): 129401
Keywords: pulse sequence; variable threshold; image reconstruction; visual sensing; adaptive video reconstruction
Cite as: Xu J T, Lin P, Gao Z Y, et al. A variable threshold visual sensing and image reconstruction method based on pulse sequence. Sci China Inf Sci, 2022, 65(2): 129401, doi: 10.1007/s11432-020-3003-2

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E-band transceiver monolithic microwave integrated circuit in a waveguide package for millimeter-wave radio channel emulation applications
Wang, Chen; Hou, Debin; Zheng, Sidou; Chen, Jixin; Zhang, Nianzu; Jiang, Zhengbo; Hong, Wei
Sci China Inf Sci, 2022, 65(2): 129404
Keywords: MMIC; millimeter-wave; transceiver; microstrip-to-waveguide transition; E-band; radio channel emulator
Cite as: Wang C, Hou D B, Zheng S D, et al. E-band transceiver monolithic microwave integrated circuit in a waveguide package for millimeter-wave radio channel emulation applications. Sci China Inf Sci, 2022, 65(2): 129404, doi: 10.1007/s11432-020-3124-1

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A centripetal collection image sensor (CCIS) based on back gate modulation achieving 1T submicron pixel
Liu, Liqiao; Yu, Guihai; Du, Gang; Liu, Xiaoyan
Sci China Inf Sci, 2022, 65(4): 149401
Keywords: Image sensor; submicron pixel; back gate modulation; pixel crosstalk; Silicon on insulator
Cite as: Liu L Q, Yu G H, Du G, et al. A centripetal collection image sensor (CCIS) based on back gate modulation achieving 1T submicron pixel. Sci China Inf Sci, 2022, 65(4): 149401, doi: 10.1007/s11432-020-2933-y

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A SiGe W-band frequency tripler with 10.5 dBm output power using harmonic suppression technique
Li, Huanbo; Chen, Jixin; Zhou, Peigen; Hou, Debin; Hong, Wei
Sci China Inf Sci, 2022, 65(4): 149402
Keywords: SiGe; W-band; frequency triper; harmonic suppression; transformer
Cite as: Li H B, Chen J X, Zhou P G, et al. A SiGe W-band frequency tripler with 10.5 dBm output power using harmonic suppression technique. Sci China Inf Sci, 2022, 65(4): 149402, doi: 10.1007/s11432-020-3041-5

量子

Special Focus on Quantum Information
REVIEW Website SpringerLink Google Scholar Cited in SCI: 17

Superconducting quantum computing: a review
Huang, He-Liang; Wu, Dachao; Fan, Daojin; Zhu, Xiaobo
Sci China Inf Sci, 2020, 63(8): 180501
Keywords: quantum computing; superconducting quantum computing; quantum bit; quantum algorithm; qubit design; qubit control; qubit readout
Cite as: Huang H-L, Wu D C, Fan D J, et al. Superconducting quantum computing: a review. Sci China Inf Sci, 2020, 63(8): 180501, doi: 10.1007/s11432-020-2881-9

RESEARCH PAPER Website SpringerLink Google Scholar Cited in SCI: 8

Multi-wavelength colloidal quantum dot lasers in distributed feedback cavities
Hayat, Anwer; Tong, Junhua; Chen, Chao; Niu, Lianze; Aziz, Gohar; Zhai, Tianrui; Zhang, Xinping
Sci China Inf Sci, 2020, 63(8): 182401
Keywords: multi-wavelength; quantum dots lasers; distributed feedback; flexible; tunable
Cite as: Hayat A, Tong J H, Chen C, et al. Multi-wavelength colloidal quantum dot lasers in distributed feedback cavities. Sci China Inf Sci, 2020, 63(8): 182401, doi: 10.1007/s11432-019-2753-3

Special Focus on Quantum Information
REVIEW Website SpringerLink Google Scholar Cited in SCI: 7

Quantum network based on non-classical light
Su, Xiaolong; Wang, Meihong; Yan, Zhihui; Jia, Xiaojun; Xie, Changde; Peng, Kunchi
Sci China Inf Sci, 2020, 63(8): 180503
Keywords: quantum network; non-classical light; quantum entanglement; quantum communication; quantum teleportation
Cite as: Su X L, Wang M H, Yan Z H, et al. Quantum network based on non-classical light. Sci China Inf Sci, 2020, 63(8): 180503, doi: 10.1007/s11432-020-2953-y

Special Focus on Quantum Information
REVIEW Website SpringerLink Google Scholar Cited in SCI: 3

Superconducting X-ray detectors
Yang, Can; Si, Mengting; You, Lixing
Sci China Inf Sci, 2020, 63(8): 180502
Keywords: superconducting X-ray detectors; transition-edge sensors; superconducting tunneling junctions; kinetic inductance detectors; superconducting nanowire single-photon detector
Cite as: Yang C, Si M T, You L X. Superconducting X-ray detectors. Sci China Inf Sci, 2020, 63(8): 180502, doi: 10.1007/s11432-020-2932-8

Special Focus on Quantum Information
RESEARCH PAPER Website SpringerLink Google Scholar Cited in SCI: 2

A universal simulating framework for quantum key distribution systems
Fan-Yuan, Guan-Jie; Chen, Wei; Lu, Feng-Yu; Yin, Zhen-Qiang; Wang, Shuang; Guo, Guang-Can; Han, Zheng-Fu
Sci China Inf Sci, 2020, 63(8): 180504
Keywords: quantum key distribution; quantum optics; simulation; modeling; C plus plus
Cite as: Fan-Yuan G-J, Chen W, Lu F-Y, et al. A universal simulating framework for quantum key distribution systems. Sci China Inf Sci, 2020, 63(8): 180504, doi: 10.1007/s11432-020-2886-x

Special Focus on Quantum Information
RESEARCH PAPER Website SpringerLink Google Scholar Cited in SCI: 1

Experimental observation of coherent interaction between laser and erbium ions ensemble doped in fiber at sub 10 mK
Xi, Qi; Wei, Shihai; Yuan, Chenzhi; Zhang, Xueying; Wang, You; Song, Haizhi; Deng, Guangwei; Jing, Bo; Oblak, Daniel; Zhou, Qiang
Sci China Inf Sci, 2020, 63(8): 180505
Keywords: quantum memory; erbium-doped fiber; coherent interaction; transition dipole moment; sub 10 mK
Cite as: Xi Q, Wei S H, Yuan C Z, et al. Experimental observation of coherent interaction between laser and erbium ions ensemble doped in fiber at sub 10 mK. Sci China Inf Sci, 2020, 63(8): 180505, doi: 10.1007/s11432-020-2954-5

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Quantum speedup of twin support vector machines
Ye, Zekun; Li, Lvzhou; Situ, Haozhen; Wang, Yuyi
Sci China Inf Sci, 2020, 63(8): 189501
Keywords: quantum computing; quantum machine learning; quantum algorithms; twin support vector machines; exponential speedup
Cite as: Ye Z K, Li L Z, Situ H Z, et al. Quantum speedup of twin support vector machines. Sci China Inf Sci, 2020, 63(8): 189501, doi: 10.1007/s11432-019-2783-7

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Effect on ion-trap quantum computers from the quantum nature of the driving field
Yang, Biyao; Yang, Li
Sci China Inf Sci, 2020, 63(10): 202501
Keywords: quantum computing; ion-trap; quantum algorithm; fault-tolerant quantum computation; threshold theorem; permitted depth of logical operation
Cite as: Yang B Y, Yang L. Effect on ion-trap quantum computers from the quantum nature of the driving field. Sci China Inf Sci, 2020, 63(10): 202501, doi: 10.1007/s11432-019-2689-4

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Quantum key distribution based on single-particle and EPR entanglement
Li, Leilei; Li, Jian; Chang, Yan; Yang, Yuguang; Chen, Xiubo
Sci China Inf Sci, 2020, 63(6): 169501
Keywords: Single-particle; EPR entanglement; The BB84 protocol; Security analysis; Information entropy
Cite as: Li L L, Li J, Chang Y, et al. Quantum key distribution based on single-particle and EPR entanglement. Sci China Inf Sci, 2020, 63(6): 169501, doi: 10.1007/s11432-018-9851-6

Special Focus on Quantum Information
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Experimental test of Tsirelson's bound with a single photonic qubit
Tian, Zhiyu; Zhao, Yuan-Yuan; Wu, Hao; Wang, Zhao; Luo, Le
Sci China Inf Sci, 2020, 63(8): 180506
Keywords: CHSH game; quantum strategies; quantum mechanics; Tsirelson's bound; single-photon system
Cite as: Tian Z Y, Zhao Y-Y, Wu H, et al. Experimental test of Tsirelson's bound with a single photonic qubit. Sci China Inf Sci, 2020, 63(8): 180506, doi: 10.1007/s11432-020-2901-0

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Quantum algorithms of state estimators in classical control systems
Li, Kai; Dai, Hongyi; Zhang, Ming
Sci China Inf Sci, 2020, 63(9): 192501
Keywords: quantum computation; estimators for linear systems; optimization algorithms; quantum acceleration; time complexity
Cite as: Li K, Dai H Y, Zhang M. Quantum algorithms of state estimators in classical control systems. Sci China Inf Sci, 2020, 63(9): 192501, doi: 10.1007/s11432-019-2706-9

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Board games for quantum computers
Wu, Biao; Chen, Hanbo; Luo, Zhikang
Sci China Inf Sci, 2021, 64(2): 122501
Keywords: quantum Weiqi; quantum Go; Weiqi; Five in a Row; board games
Cite as: Wu B, Chen H B, Luo Z K. Board games for quantum computers. Sci China Inf Sci, 2021, 64(2): 122501, doi: 10.1007/s11432-020-3038-x

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Generation of two-axis countertwisting squeezed spin states via Uhrig dynamical decoupling
Zhang, Jiying; Wu, Shan; Zhang, Yongchang; Zhou, Zhengwei
Sci China Inf Sci, 2021, 64(2): 122502
Keywords: squeezed spin states; Uhrig dynamical decoupling; control pulses; quantum control; quantum metrology; quantum information science
Cite as: Zhang J Y, Wu S, Zhang Y C, et al. Generation of two-axis countertwisting squeezed spin states via Uhrig dynamical decoupling. Sci China Inf Sci, 2021, 64(2): 122502, doi: 10.1007/s11432-020-3075-2

NEWS & VIEWS Website SpringerLink Google Scholar Cited in SCI: 0

A multiplexed quantum repeater based on absorptive quantum memories
Zhou, Zhengwei
Sci China Inf Sci, 2021, 64(11): 217501
Keywords: quantum memory; quantum repeater; quantum communication; quantum entanglement; quantum network
Cite as: Zhou Z W. A multiplexed quantum repeater based on absorptive quantum memories. Sci China Inf Sci, 2021, 64(11): 217501, doi: 10.1007/s11432-021-3287-6

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Keywords: Quantum illumination; displacement operation; antidisplacement operation; quantum entanglement; Quantum Chernoff Bound
Cite as: Zhang S L. Quantum illumination with post-processing of displacement and anti-displacement operations. Sci China Inf Sci, 2021, 64(12): 229501, doi: 10.1007/s11432-020-3037-1