Special Topic: Recent Progress of Fundamental Research on Post-Moore Novel Devices
REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 3

Memristive dynamics enabled neuromorphic computing systems
Yan, Bonan; Yang, Yuchao; Huang, Ru
Sci China Inf Sci, 2023, 66(10): 200401
Keywords: memrsitor; memristive dynamics; artificial synapse; artificial neuron; neuromorphic computing
Cite as: Yan B N, Yang Y C, Huang R. Memristive dynamics enabled neuromorphic computing systems. Sci China Inf Sci, 2023, 66(10): 200401, doi: 10.1007/s11432-023-3739-0

Special Topic: Recent Progress of Fundamental Research on Post-Moore Novel Devices
REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

In-memory computing based on phase change memory for high energy efficiency
He, Luchang; Li, Xi; Xie, Chenchen; Song, Zhitang
Sci China Inf Sci, 2023, 66(10): 200402
Keywords: in-memory computing; phase change memory; energy efficiency; neural network; memory wall
Cite as: He L C, Li X, Xie C C, et al. In-memory computing based on phase change memory for high energy efficiency. Sci China Inf Sci, 2023, 66(10): 200402, doi: 10.1007/s11432-023-3789-7

Special Topic: Recent Progress of Fundamental Research on Post-Moore Novel Devices
REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

From macro to microarchitecture: reviews and trends of SRAM-based compute-in-memory circuits
Zhang, Zhaoyang; Chen, Jinwu; Chen, Xi; Guo, An; Wang, Bo; Xiong, Tianzhu; Kong, Yuyao; Pu, Xingyu; He, Shengnan; Si, Xin; Yang, Jun
Sci China Inf Sci, 2023, 66(10): 200403
Keywords: artificial intelligence; compute-in-memory; static random access memory
Cite as: Zhang Z Y, Chen J W, Chen X, et al. From macro to microarchitecture: reviews and trends of SRAM-based compute-in-memory circuits. Sci China Inf Sci, 2023, 66(10): 200403, doi: 10.1007/s11432-023-3800-9

Special Topic: Recent Progress of Fundamental Research on Post-Moore Novel Devices
REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Recent progress in InGaZnO FETs for high-density 2T0C DRAM applications
Yan, Shengzhe; Cong, Zhaori; Lu, Nianduan; Yue, Jinshan; Luo, Qing
Sci China Inf Sci, 2023, 66(10): 200404
Keywords: IGZO FET; 2T0C DRAM; high density; compact modeling; computing-in-memory; monolithic 3D integration
Cite as: Yan S Z, Cong Z R, Lu N D, et al. Recent progress in InGaZnO FETs for high-density 2T0C DRAM applications. Sci China Inf Sci, 2023, 66(10): 200404, doi: 10.1007/s11432-023-3802-8

Special Topic: Recent Progress of Fundamental Research on Post-Moore Novel Devices
REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications
Zhang, Zhaohao; Tian, Guoliang; Huo, Jiali; Zhang, Fang; Zhang, Qingzhu; Xu, Gaobo; Wu, Zhenhua; Cheng, Yan; Liu, Yan; Yin, Huaxiang
Sci China Inf Sci, 2023, 66(10): 200405
Keywords: ferroelectric; FeFET; hafnium oxide; HZO; logic-in-memory; neuromorphic computing
Cite as: Zhang Z H, Tian G L, Huo J L, et al. Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications. Sci China Inf Sci, 2023, 66(10): 200405, doi: 10.1007/s11432-023-3780-7

Special Topic: Recent Progress of Fundamental Research on Post-Moore Novel Devices
REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

Toward monolithic growth integration of nanowire electronics in 3D architecture: a review
Liang, Lei; Hu, Ruijin; Yu, Linwei
Sci China Inf Sci, 2023, 66(10): 200406
Keywords: catalytic growth; silicon nanowires; electronics; monolithic 3D-integration
Cite as: Liang L, Hu R J, Yu L W. Toward monolithic growth integration of nanowire electronics in 3D architecture: a review. Sci China Inf Sci, 2023, 66(10): 200406, doi: 10.1007/s11432-023-3774-y

Special Topic: Recent Progress of Fundamental Research on Post-Moore Novel Devices
PROGRESS Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Research progress on low-power artificial intelligence of things (AIoT) chip design
Ye, Le; Wang, Zhixuan; Jia, Tianyu; Ma, Yufei; Shen, Linxiao; Zhang, Yihan; Li, Heyi; Chen, Peiyu; Wu, Meng; Liu, Ying; Jing, Yiqi; Zhang, Hao; Huang, Ru
Sci China Inf Sci, 2023, 66(10): 200407
Keywords: artificial intelligence; Internet of Things; low-power; chip design; random sparse event
Cite as: Ye L, Wang Z X, Jia T Y, et al. Research progress on low-power artificial intelligence of things (AIoT) chip design. Sci China Inf Sci, 2023, 66(10): 200407, doi: 10.1007/s11432-023-3813-8

Special Topic: Recent Progress of Fundamental Research on Post-Moore Novel Devices
PROGRESS Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Architecture-circuit-technology co-optimization for resistive random access memory-based computation-in-memory chips
Liu, Yuyi; Gao, Bin; Tang, Jianshi; Wu, Huaqiang; Qian, He
Sci China Inf Sci, 2023, 66(10): 200408
Keywords: resistive random-access memory; computation-in-memory; compact model; device-architecture-algorithm co-design; compiler
Cite as: Liu Y Y, Gao B, Tang J S, et al. Architecture-circuit-technology co-optimization for resistive random access memory-based computation-in-memory chips. Sci China Inf Sci, 2023, 66(10): 200408, doi: 10.1007/s11432-023-3785-8

Special Topic: Recent Progress of Fundamental Research on Post-Moore Novel Devices
PROGRESS Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Breaking the energy-efficiency barriers for smart sensing applications with “Sensing with Computing” architectures
Yang, Xinghua; Liu, Zheyu; Tang, Kechao; Yin, Xunzhao; Zhuo, Cheng; Wei, Qi; Qiao, Fei
Sci China Inf Sci, 2023, 66(10): 200409
Keywords: low power consumption circuit design; sensing with computing; smart sensors; edge computing; multi-modal sensing
Cite as: Yang X H, Liu Z Y, Tang K C, et al. Breaking the energy-efficiency barriers for smart sensing applications with “Sensing with Computing” architectures. Sci China Inf Sci, 2023, 66(10): 200409, doi: 10.1007/s11432-023-3760-8

Special Topic: Recent Progress of Fundamental Research on Post-Moore Novel Devices
RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Ferroelectric-like behaviors of metal-insulator-metal with amorphous dielectrics
Liu, Huan; Chen, Jiajia; Jin, Chengji; Yu, Xiao; Liu, Yan; Han, Genquan
Sci China Inf Sci, 2023, 66(10): 200410
Keywords: ferroelectric-like; mobile ion; amorphous dielectric; ZrO2; temperature
Cite as: Liu H, Chen J J, Jin C J, et al. Ferroelectric-like behaviors of metal-insulator-metal with amorphous dielectrics. Sci China Inf Sci, 2023, 66(10): 200410, doi: 10.1007/s11432-023-3759-x