Special Topic: Two-Dimensional Materials and Device Applications

Special Topic: Two-Dimensional Materials and Device Applications
REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 7

Two-dimensional materials-based integrated hardware
Peng, Zhuiri; Lin, Runfeng; Li, Zheng; Xu, Langlang; Yu, Xiangxiang; Huang, Xinyu; Shi, Wenhao; He, Xiao; Meng, Xiaohan; Tong, Lei; Miao, Xiangshui; Ye, Lei
Sci China Inf Sci, 2023, 66(6): 160401

Keywords: two-dimensional materials; integrated circuit; integrated sensor; integrated optoelectronics

Cite as: Peng Z R, Lin R F, Li Z, et al. Two-dimensional materials-based integrated hardware. Sci China Inf Sci, 2023, 66(6): 160401, doi: 10.1007/s11432-023-3744-2

Special Topic: Two-Dimensional Materials and Device Applications
REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 8

Recent progress of layered memristors based on two-dimensional MoS2
Tong, Wei; Liu, Yuan
Sci China Inf Sci, 2023, 66(6): 160402

Keywords: memristor; switching mechanism; MoS2; 2D materials

Cite as: Tong W, Liu Y. Recent progress of layered memristors based on two-dimensional MoS2. Sci China Inf Sci, 2023, 66(6): 160402, doi: 10.1007/s11432-023-3751-y

Special Topic: Two-Dimensional Materials and Device Applications
REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 5

Multidimensional modulation of light fields via a combination of two-dimensional materials and meta-structures
Zheng, Zhipeng; Huang, Yijing; Wu, Feng; Zhang, Han; Fang, Zheyu
Sci China Inf Sci, 2023, 66(6): 160403

Keywords: two-dimensional materials; electromagnetic meta-structures; light field modulation; surface plasma polarisation; surface plasmon

Cite as: Zheng Z P, Huang Y J, Wu F, et al. Multidimensional modulation of light fields via a combination of two-dimensional materials and meta-structures. Sci China Inf Sci, 2023, 66(6): 160403, doi: 10.1007/s11432-023-3753-9

Special Topic: Two-Dimensional Materials and Device Applications
RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 5

Near-infrared optoelectronic synapses based on a Te/α-In2Se3 heterojunction for neuromorphic computing
Yan, Tao; Cai, Yuchen; Wang, Yanrong; Yang, Jia; Li, Shuhui; Zhan, Xueying; Wang, Fengmei; Cheng, Ruiqing; Wang, Feng; He, Jun; Wang, Zhenxing
Sci China Inf Sci, 2023, 66(6): 160404

Keywords: near infrared; phototransistor; two-dimensional ferroelectric semiconductor; artificial neural networks; optoelectronic synapses

Cite as: Yan T, Cai Y C, Wang Y R, et al. Near-infrared optoelectronic synapses based on a Te/α-In2Se3 heterojunction for neuromorphic computing. Sci China Inf Sci, 2023, 66(6): 160404, doi: 10.1007/s11432-022-3695-1

Special Topic: Two-Dimensional Materials and Device Applications
RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

Selective enriching of trionic emission in a WS2-ZnO hybrid through type-II band alignment
Leong, Jin Feng; Lim, Kim Yong; Wu, Xiao; Xu, Qinghua; Sow, Chorng Haur; Poh, Eng Tuan
Sci China Inf Sci, 2023, 66(6): 160405

Keywords: heterostructure; trions; type-II band alignment

Cite as: Leong J F, Lim K Y, Wu X, et al. Selective enriching of trionic emission in a WS2-ZnO hybrid through type-II band alignment. Sci China Inf Sci, 2023, 66(6): 160405, doi: 10.1007/s11432-022-3719-4

Special Topic: Two-Dimensional Materials and Device Applications
RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 6

A novel negative quantum capacitance field-effect transistor with molybdenum disulfide integrated gate stack and steep subthreshold swing for ultra-low power applications
Chen, Liang; Wang, Huimin; Huang, Qianqian; Huang, Ru
Sci China Inf Sci, 2023, 66(6): 160406

Keywords: negative quantum capacitance; molybdenum disulfide; field-effect transistor; subthreshold swing; ultra-low power device

Cite as: Chen L, Wang H M, Huang Q Q, et al. A novel negative quantum capacitance field-effect transistor with molybdenum disulfide integrated gate stack and steep subthreshold swing for ultra-low power applications. Sci China Inf Sci, 2023, 66(6): 160406, doi: 10.1007/s11432-023-3763-3

Special Topic: Two-Dimensional Materials and Device Applications
RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

Growth of uniformly doped black phosphorus films through versatile atomic substitution
Chen, Cheng; Lu, Yang; Li, Chang; Hou, Xingang; Wang, Yongjie; Zhang, Junrong; Wang, Junyong; Zhang, Kai
Sci China Inf Sci, 2023, 66(6): 160407

Keywords: black phosphorus; dope; vapor growth; thin film; two-dimensional materials

Cite as: Chen C, Lu Y, Li C, et al. Growth of uniformly doped black phosphorus films through versatile atomic substitution. Sci China Inf Sci, 2023, 66(6): 160407, doi: 10.1007/s11432-023-3762-9

Special Topic: Two-Dimensional Materials and Device Applications
RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 3

Simultaneous optimization of phononic and electronic transport in two-dimensional Bi2O2Se by defect engineering
Yang, Fang; Ng, Hong Kuan; Wu, Jing; Zhao, Yunshan; Lu, Junpeng
Sci China Inf Sci, 2023, 66(6): 160408

Keywords: 2D Bi2O2Se; thermal conductivity; oxygens defects; phonon scattering; mobility

Cite as: Yang F, Ng H K, Wu J, et al. Simultaneous optimization of phononic and electronic transport in two-dimensional Bi2O2Se by defect engineering. Sci China Inf Sci, 2023, 66(6): 160408, doi: 10.1007/s11432-023-3758-4

Special Topic: Two-Dimensional Materials and Device Applications
RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

Bolstering functionality in multilayer and bilayer WS2 via focused laser micro-engraving
Chan, Si Min; Poh, Eng Tuan; Leong, Jin Feng; Goh, Kuan Eng Johnson; Sow, Chorng Haur
Sci China Inf Sci, 2023, 66(6): 160409

Keywords: WS2 monolayer micro-patterning; focused laser; sonication lift-off

Cite as: Chan S M, Poh E T, Leong J F, et al. Bolstering functionality in multilayer and bilayer WS2 via focused laser micro-engraving. Sci China Inf Sci, 2023, 66(6): 160409, doi: 10.1007/s11432-023-3764-7

Special Topic: Two-Dimensional Materials and Device Applications
RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 4

AtomGAN: unsupervised deep learning for fast and accurate defect detection of 2D materials at the atomic scale
Cheng, Danpeng; Sha, Wuxin; Xu, Zuo; Li, Shide; Yin, Zhigao; Lang, Yuling; Tang, Shun; Cao, Yuan-Cheng
Sci China Inf Sci, 2023, 66(6): 160410

Keywords: deep learning; generative adversarial network; defect detection; atomic resolution; 2D materials

Cite as: Cheng D P, Sha W X, Xu Z, et al. AtomGAN: unsupervised deep learning for fast and accurate defect detection of 2D materials at the atomic scale. Sci China Inf Sci, 2023, 66(6): 160410, doi: 10.1007/s11432-022-3757-x

Special Topic: Two-Dimensional Materials and Device Applications
PROGRESS Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 12

From lab to fab: path forward for 2D material electronics
Ning, Hongkai; Yu, Zhihao; Li, Taotao; Shen, Haoliang; Long, Gen; Shi, Yi; Wang, Xinran
Sci China Inf Sci, 2023, 66(6): 160411

Keywords: two-dimensional materials; transition-metal dichalcogenides; equipment; integrated circuits; roadmap

Cite as: Ning H K, Yu Z H, Li T T, et al. From lab to fab: path forward for 2D material electronics. Sci China Inf Sci, 2023, 66(6): 160411, doi: 10.1007/s11432-023-3752-3