Special Topic: Silicon-compatible 2D Materials Technologies
REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 10

Two-dimensional materials for future information technology: status and prospects
Qiu, Hao; Yu, Zhihao; Zhao, Tiange; Zhang, Qi; Xu, Mingsheng; Li, Peifeng; Li, Taotao; Bao, Wenzhong; Chai, Yang; Chen, Shula; Chen, Yiqi; Cheng, Hui-Ming; Dai, Daoxin; Di, Zengfeng; Dong, Zhuo; Duan, Xidong; Feng, Yuhan; Fu, Yu; Guo, Jingshu; Guo, Pengwen; Hao, Yue; He, Jun; He, Xiao; Hu, Jingyi; Hu, Weida; Hu, Zehua; Huang, Xinyue; Huang, Ziyang; Imran, Ali; Kong, Ziqiang; Li, Jia; Li, Qian; Li, Weisheng; Liao, Lei; Liu, Bilu; Liu, Can; Liu, Chunsen; Liu, Guanyu; Liu, Kaihui; Liu, Liwei; Liu, Sheng; Liu, Yuan; Lu, Donglin; Ma, Likuan; Miao, Feng; Ni, Zhenhua; Ning, Jing; Pan, Anlian; Ren, Tian-Ling; Shu, Haowen; Sun, Litao; Sun, Yue; Tao, Quanyang; Tian, Zi-Ao; Wang, Dong; Wang, Hao; Wang, Haomin; Wang, Jialong; Wang, Junyong; Wang, Wenhui; Wang, Xingjun; Wang, Yeliang; Wang, Yuwei; Wang, Zhenyu; Wen, Yao; Wu, Haidi; Wu, Hongzhao; Wu, Jiangbin; Wu, Yanqing; Xia, Longfei; Xiang, Baixu; Xing, Luwen; Xiong, Qihua; Xiong, Xiong; Xu, Jeffrey; Xu, Tao; Xu, Yang; Yang, Liu; Yang, Yi; Yang, Yuekun; Ye, Lei; Ye, Yu; Yu, Bin; Yu, Ting; Zeng, Hui; Zhang, Guangyu; Zhang, Hongyun; Zhang, Jincheng; Zhang, Kai; Zhang, Tao; Zhang, Xinbo; Zhang, Yanfeng; Zhao, Chunsong; Zhao, Yuda; Zheng, Ting; Zhou, Peng; Zhou, Shuyun; Zhu, Yuxuan; Yang, Deren; Shi, Yi; Wang, Han; Wang, Xinran
Sci China Inf Sci, 2024, 67(6): 160400
Keywords: two-dimensional materials; 2D materials; information technology; production technology; standardization of characterization; microelectronic devices; optoelectronic devices; multi-functional integration
Cite as: Qiu H, Yu Z H, Zhao T G, et al. Two-dimensional materials for future information technology: status and prospects. Sci China Inf Sci, 2024, 67(6): 160400, doi: 10.1007/s11432-024-4033-8

Special Topic: Silicon-compatible 2D Materials Technologies
REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

Progress on the program of Si-compatible two-dimensional semiconductor materials and devices
Xu, Mingsheng; Wang, Yuwei; Liu, Jiwei; Yang, Deren
Sci China Inf Sci, 2024, 67(6): 160401
Keywords: two-dimensional materials; Si-based CMOS technologies; electronics and optoelectronics; heterogeneous integration; low-power
Cite as: Xu M S, Wang Y W, Liu J W, et al. Progress on the program of Si-compatible two-dimensional semiconductor materials and devices. Sci China Inf Sci, 2024, 67(6): 160401, doi: 10.1007/s11432-024-3986-8

Special Topic: Silicon-compatible 2D Materials Technologies
RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

Contact engineering for temperature stability improvement of Bi-contacted MoS2 field effect transistors
Liu, Zizheng; Zhang, Qing; Huang, Xiaohe; Liu, Chunsen; Zhou, Peng
Sci China Inf Sci, 2024, 67(6): 160402
Keywords: temperature stability; semimetallic bismuth contact; semimetallic antimony contact; MoS2 FETs; time stability
Cite as: Liu Z Z, Zhang Q, Huang X H, et al. Contact engineering for temperature stability improvement of Bi-contacted MoS2 field effect transistors. Sci China Inf Sci, 2024, 67(6): 160402, doi: 10.1007/s11432-023-3942-2

Special Topic: Silicon-compatible 2D Materials Technologies
RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Highly responsive broadband Si-based MoS2 phototransistor on high-k dielectric
Imran, Ali; He, Xin; Liu, Jiwei; Zhu, Qinghai; Sulaman, Muhammad; Xue, Fei; Xu, Mingsheng; Yang, Deren
Sci China Inf Sci, 2024, 67(6): 160403
Keywords: photogating; photoconduction; two-dimensional materials; high k dielectric; carrier scattering; phototransistor
Cite as: Imran A, He X, Liu J W, et al. Highly responsive broadband Si-based MoS2 phototransistor on high-k dielectric. Sci China Inf Sci, 2024, 67(6): 160403, doi: 10.1007/s11432-024-3994-4

Special Topic: Silicon-compatible 2D Materials Technologies
RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Heterogeneous integration of 2D materials on Si charge-coupled devices as optical memory
Bian, Zheng; Tian, Feng; Li, Zongwen; Su, Xiangwei; Zhang, Tianjiao; Miao, Jialei; Yu, Bin; Xu, Yang; Zhao, Yuda
Sci China Inf Sci, 2024, 67(6): 160404
Keywords: heterogeneous integration; charge-coupled device; floating gate; optical memory; molybdenum disulfide; lightly doped silicon
Cite as: Bian Z, Tian F, Li Z W, et al. Heterogeneous integration of 2D materials on Si charge-coupled devices as optical memory. Sci China Inf Sci, 2024, 67(6): 160404, doi: 10.1007/s11432-024-3993-5

Special Topic: Silicon-compatible 2D Materials Technologies
RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors
Yang, Qiyu; Luo, Zheng-Dong; Xiao, Fei; Zhang, Junpeng; Zhang, Dawei; Tan, Dongxin; Gan, Xuetao; Liu, Yan; Chu, Zhufei; Xia, Yinshui; Han, Genquan
Sci China Inf Sci, 2024, 67(6): 160405
Keywords: vdW heterostructure; non-volatile memory; vertical-transport transistor; ferroelectric field-effect transistor; memristive devices
Cite as: Yang Q Y, Luo Z-D, Xiao F, et al. Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors. Sci China Inf Sci, 2024, 67(6): 160405, doi: 10.1007/s11432-024-4004-9

Special Topic: Silicon-compatible 2D Materials Technologies
RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Hole mobility enhancement in monolayer WSe2 p-type transistors through molecular doping
Liu, Shiyuan; Xiong, Xiong; Wang, Xin; Shi, Xinhang; Huang, Ru; Wu, Yanqing
Sci China Inf Sci, 2024, 67(6): 160406
Keywords: CVD-grown WSe2; molecular doping; 4-NBD; p-type transistors; hole mobility
Cite as: Liu S Y, Xiong X, Wang X, et al. Hole mobility enhancement in monolayer WSe2 p-type transistors through molecular doping. Sci China Inf Sci, 2024, 67(6): 160406, doi: 10.1007/s11432-024-4032-6