Special Topic: Silicon-compatible 2D Materials Technologies
REVIEW
Webpage
Webpage-cn
SpringerLink
Google Scholar
Keywords: two-dimensional materials; 2D materials; information technology; production technology; standardization of characterization; microelectronic devices; optoelectronic devices; multi-functional integration
Cite as: Qiu H, Yu Z H, Zhao T G, et al. Two-dimensional materials for future information technology: status and prospects. Sci China Inf Sci, 2024, 67(6): 160400, doi: 10.1007/s11432-024-4033-8
Special Topic: Silicon-compatible 2D Materials Technologies
REVIEW
Webpage
Webpage-cn
SpringerLink
Google Scholar
Keywords: two-dimensional materials; Si-based CMOS technologies; electronics and optoelectronics; heterogeneous integration; low-power
Cite as: Xu M S, Wang Y W, Liu J W, et al. Progress on the program of Si-compatible two-dimensional semiconductor materials and devices. Sci China Inf Sci, 2024, 67(6): 160401, doi: 10.1007/s11432-024-3986-8
Special Topic: Silicon-compatible 2D Materials Technologies
RESEARCH PAPER
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
Contact engineering for temperature stability improvement of Bi-contacted MoS2 field effect transistors
Liu, Zizheng; Zhang, Qing; Huang, Xiaohe; Liu, Chunsen; Zhou, Peng
Sci China Inf Sci, 2024, 67(6): 160402
Keywords: temperature stability; semimetallic bismuth contact; semimetallic antimony contact; MoS2 FETs; time stability
Cite as: Liu Z Z, Zhang Q, Huang X H, et al. Contact engineering for temperature stability improvement of Bi-contacted MoS2 field effect transistors. Sci China Inf Sci, 2024, 67(6): 160402, doi: 10.1007/s11432-023-3942-2
Special Topic: Silicon-compatible 2D Materials Technologies
RESEARCH PAPER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
Highly responsive broadband Si-based MoS2 phototransistor on high-k dielectric
Imran, Ali; He, Xin; Liu, Jiwei; Zhu, Qinghai; Sulaman, Muhammad; Xue, Fei; Xu, Mingsheng; Yang, Deren
Sci China Inf Sci, 2024, 67(6): 160403
Keywords: photogating; photoconduction; two-dimensional materials; high k dielectric; carrier scattering; phototransistor
Cite as: Imran A, He X, Liu J W, et al. Highly responsive broadband Si-based MoS2 phototransistor on high-k dielectric. Sci China Inf Sci, 2024, 67(6): 160403, doi: 10.1007/s11432-024-3994-4
Special Topic: Silicon-compatible 2D Materials Technologies
RESEARCH PAPER
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
Heterogeneous integration of 2D materials on Si charge-coupled devices as optical memory
Bian, Zheng; Tian, Feng; Li, Zongwen; Su, Xiangwei; Zhang, Tianjiao; Miao, Jialei; Yu, Bin; Xu, Yang; Zhao, Yuda
Sci China Inf Sci, 2024, 67(6): 160404
Keywords: heterogeneous integration; charge-coupled device; floating gate; optical memory; molybdenum disulfide; lightly doped silicon
Cite as: Bian Z, Tian F, Li Z W, et al. Heterogeneous integration of 2D materials on Si charge-coupled devices as optical memory. Sci China Inf Sci, 2024, 67(6): 160404, doi: 10.1007/s11432-024-3993-5
Special Topic: Silicon-compatible 2D Materials Technologies
RESEARCH PAPER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors
Yang, Qiyu; Luo, Zheng-Dong; Xiao, Fei; Zhang, Junpeng; Zhang, Dawei; Tan, Dongxin; Gan, Xuetao; Liu, Yan; Chu, Zhufei; Xia, Yinshui; Han, Genquan
Sci China Inf Sci, 2024, 67(6): 160405
Keywords: vdW heterostructure; non-volatile memory; vertical-transport transistor; ferroelectric field-effect transistor; memristive devices
Cite as: Yang Q Y, Luo Z-D, Xiao F, et al. Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors. Sci China Inf Sci, 2024, 67(6): 160405, doi: 10.1007/s11432-024-4004-9
Special Topic: Silicon-compatible 2D Materials Technologies
RESEARCH PAPER
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
Hole mobility enhancement in monolayer WSe2 p-type transistors through molecular doping
Liu, Shiyuan; Xiong, Xiong; Wang, Xin; Shi, Xinhang; Huang, Ru; Wu, Yanqing
Sci China Inf Sci, 2024, 67(6): 160406
Keywords: CVD-grown WSe2; molecular doping; 4-NBD; p-type transistors; hole mobility
Cite as: Liu S Y, Xiong X, Wang X, et al. Hole mobility enhancement in monolayer WSe2 p-type transistors through molecular doping. Sci China Inf Sci, 2024, 67(6): 160406, doi: 10.1007/s11432-024-4032-6
