Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
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Ferroelectric materials, devices, and chips technologies for advanced computing and memory applications: development and challenges
Yu X, Zhong N, Cheng Y, et al
Sci China Inf Sci, 2025, 68(6): 160401
Keywords: ferroelectric; HfO2; zirconium oxide; ZrO2; wurtzite; AlScN; FeRAM; FeFET
Cite as: Yu X, Zhong N, Cheng Y, et al. Ferroelectric materials, devices, and chips technologies for advanced computing and memory applications: development and challenges. Sci China Inf Sci, 2025, 68(6): 160401, doi: 10.1007/s11432-025-4432-x

Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
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Improvement with low operation voltage in ultrathin La-doped Hf0.5Zr0.5O2 ferroelectric capacitors
Zeng M, Yan S W, Liu S Y, et al
Sci China Inf Sci, 2025, 68(6): 160402
Keywords: atomic layer deposition; hafnium zirconium oxide; HZO; ferroelectric capacitor; endurance; reliability
Cite as: Zeng M, Yan S W, Liu S Y, et al. Improvement with low operation voltage in ultrathin La-doped Hf0.5Zr0.5O2 ferroelectric capacitors. Sci China Inf Sci, 2025, 68(6): 160402, doi: 10.1007/s11432-024-4412-3

Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
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Polynomial geometric transformation based on IGZO charge trapping RAM array for machine vision calibration
Bao L, Zhang H S, Wang Z W, et al
Sci China Inf Sci, 2025, 68(6): 160403
Keywords: in-memory computing; oxide semiconductor; polynomial evaluation; charge trapping device
Cite as: Bao L, Zhang H S, Wang Z W, et al. Polynomial geometric transformation based on IGZO charge trapping RAM array for machine vision calibration. Sci China Inf Sci, 2025, 68(6): 160403, doi: 10.1007/s11432-024-4420-5

Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
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Co-optimization of ferroelectric gate stacks on operation voltage and memory window for next-generation NAND flash
Chen B, Liu Y Z, Wu Y F, et al
Sci China Inf Sci, 2025, 68(6): 160404
Keywords: TiO2; gate stack; HZO; memory window
Cite as: Chen B, Liu Y Z, Wu Y F, et al. Co-optimization of ferroelectric gate stacks on operation voltage and memory window for next-generation NAND flash. Sci China Inf Sci, 2025, 68(6): 160404, doi: 10.1007/s11432-024-4406-y

Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
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Enhanced memory window and reliability of α-IGZO FeFET enabled by atomic-layer-deposited HfO2 interfacial layer
Liu Y C, Lu X, Li S Y, et al
Sci China Inf Sci, 2025, 68(6): 160405
Keywords: HfO2; interfacial layer; Hf0.5Zr0.5O2; memory window; reliability
Cite as: Liu Y C, Lu X, Li S Y, et al. Enhanced memory window and reliability of α-IGZO FeFET enabled by atomic-layer-deposited HfO2 interfacial layer. Sci China Inf Sci, 2025, 68(6): 160405, doi: 10.1007/s11432-024-4429-7

Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
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Crystal orientation-modulated ferroelectric and dielectric properties in Hf0.5Zr0.5O2 thin films
Li Y-C, Li X-X, Xu Z S, et al
Sci China Inf Sci, 2025, 68(6): 160406
Keywords: ferroelectric; Hf0.5Zr0.5O2; oxygen dose; GIWAXS; orientation; dielectric
Cite as: Li Y-C, Li X-X, Xu Z S, et al. Crystal orientation-modulated ferroelectric and dielectric properties in Hf0.5Zr0.5O2 thin films. Sci China Inf Sci, 2025, 68(6): 160406, doi: 10.1007/s11432-024-4428-8

Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
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Prospects and challenges of HfO2-based ferroelectric devices
Takagi S, Takenaka M, Toprasertpong K
Sci China Inf Sci, 2025, 68(6): 160407
Keywords: ferroelectric device; FeFET; FeRAM; HfO2; reservoir computing
Cite as: Takagi S, Takenaka M, Toprasertpong K. Prospects and challenges of HfO2-based ferroelectric devices. Sci China Inf Sci, 2025, 68(6): 160407, doi: 10.1007/s11432-025-4372-4

Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
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Temperature-dependent wakeup behavior in back-end-of-line compatible ultra-thin HfxZr1−xO2 ferroelectric film
Li X P, Tai L, Dou X Y, et al
Sci China Inf Sci, 2025, 68(6): 160408
Keywords: ferroelectric; HZO; wakeup behavior; BEOL compatibility; ultra-thin film
Cite as: Li X P, Tai L, Dou X Y, et al. Temperature-dependent wakeup behavior in back-end-of-line compatible ultra-thin HfxZr1−xO2 ferroelectric film. Sci China Inf Sci, 2025, 68(6): 160408, doi: 10.1007/s11432-024-4407-x

Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
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A parallel computing-in-memory accelerator utilizing FeRAM array with retention loss correction
Liu C, Shen Z H, Mao W, et al
Sci China Inf Sci, 2025, 68(6): 160409
Keywords: ferroelectric capacitor; non-ideality; computing-in-memory; 1T1C; parallel; retention loss; FeRAM; array
Cite as: Liu C, Shen Z H, Mao W, et al. A parallel computing-in-memory accelerator utilizing FeRAM array with retention loss correction. Sci China Inf Sci, 2025, 68(6): 160409, doi: 10.1007/s11432-024-4421-0

Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
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Scaled 3D-stacked 2T0C DRAM based on indium-tin-oxide transistors with long data retention and fast write speed of 10 ns
Zhu S W, Hu Q L, Gu C R, et al
Sci China Inf Sci, 2025, 68(6): 160410
Keywords: 2T0C DRAM; ITO transistors; 3D-stacked; write speed; data retention
Cite as: Zhu S W, Hu Q L, Gu C R, et al. Scaled 3D-stacked 2T0C DRAM based on indium-tin-oxide transistors with long data retention and fast write speed of 10 ns. Sci China Inf Sci, 2025, 68(6): 160410, doi: 10.1007/s11432-024-4413-2