新器件
LETTER
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 18
1.56 kV/30 A vertical β-Ga2O3 Schottky barrier diodes with composite edge terminations
Feng, Yitao; Zhou, Hong; Alghamdi, Sami; Fang, Hao; Zhang, Xiaorong; Chen, Yanbo; Tian, Guotao; Wasly, Saud; Hao, Yue; Zhang, Jincheng
Sci China Inf Sci, 2025, 68(2): 129401
Keywords: Ga2O3; Schottky diodes; high current; high breakdown voltage; edge termination; low resistance; industrial-level; power
Cite as: Feng Y T, Zhou H, Alghamdi S, et al. 1.56 kV/30 A vertical β-Ga2O3 Schottky barrier diodes with composite edge terminations. Sci China Inf Sci, 2025, 68: 129401, doi: 10.1007/s11432-024-4204-9
Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
新器件
REVIEW
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 13
Ferroelectric materials, devices, and chips technologies for advanced computing and memory applications: development and challenges
Yu, Xiao; Zhong, Ni; Cheng, Yan; Xin, Tianjiao; Luo, Qing; Gong, Tiancheng; Chen, Jiezhi; Wu, Jixuan; Cheng, Ran; Fu, Zhiyuan; Tang, Kechao; Luo, Jin; Ren, Tianling; Xue, Fei; Chen, Lin; Wang, Tianyu; Li, Xueqing; Li, Xiuyan; Wang, Ping; Wang, Xinqiang; Sun, Jie; Jiang, Anquan; Du, Peiyuan; Chen, Bing; Jin, Chengji; Chen, Jiajia; Qian, Haoji; Mao, Wei; Zheng, Siying; Liu, Huan; Xu, Haiwen; Liu, Can; Shen, Zhihao; Li, Xiaoxi; Li, Bochang; Luo, Zheng-Dong; Zhou, Jiuren; Liu, Yan; Hao, Yue; Han, Genquan
Sci China Inf Sci, 2025, 68(6): 160401
Keywords: ferroelectric; HfO2; zirconium oxide; ZrO2; wurtzite; AlScN; FeRAM; FeFET
Cite as: Yu X, Zhong N, Cheng Y, et al. Ferroelectric materials, devices, and chips technologies for advanced computing and memory applications: development and challenges. Sci China Inf Sci, 2025, 68: 160401, doi: 10.1007/s11432-025-4432-x
新器件
RESEARCH PAPER
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 12
Smaller, faster, lower-power analog RRAM matrix computing circuits without performance compromise
Luo, Yubiao; Zuo, Pushen; Wang, Shiqing; Sun, Zhong; Huang, Ru
Sci China Inf Sci, 2025, 68(2): 122402
Keywords: analog computing; in-memory computing; matrix; resistive memory; conductance compensation
Cite as: Luo Y B, Zuo P S, Wang S Q, et al. Smaller, faster, lower-power analog RRAM matrix computing circuits without performance compromise. Sci China Inf Sci, 2025, 68: 122402, doi: 10.1007/s11432-023-3990-4
新器件
LETTER
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 7
Breakdown voltage over 10 kV β-Ga2O3 heterojunction FETs with RESURF structure
Wang, Chenlu; Sun, Sihan; Su, Chunxu; Zhou, Hong; Zhang, Jincheng; Hao, Yue
Sci China Inf Sci, 2025, 68(6): 169401
Keywords: Ga2O3; heterojunction; JFET; Breakdown voltage; RESURF
Cite as: Wang C L, Sun S H, Su C X, et al. Breakdown voltage over 10 kV β-Ga2O3 heterojunction FETs with RESURF structure. Sci China Inf Sci, 2025, 68: 169401, doi: 10.1007/s11432-024-4332-4
新器件
RESEARCH PAPER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 7
MoS2 synaptic transistor with one-step manufacture
Guo, Yihao; Wang, Yang; Deng, Wenjie; Wu, Yi; Li, Jingtao; Li, Kexin; Zhao, Yuehui; Yu, Songlin; Wang, Xiaoting; Zhang, Yongzhe; Yan, Hui
Sci China Inf Sci, 2025, 68(1): 112401
Keywords: process optimization; artificial synaptic device; one-step manufacture; synaptic plasticity; bionic simulation
Cite as: Guo Y H, Wang Y, Deng W J, et al. MoS2 synaptic transistor with one-step manufacture. Sci China Inf Sci, 2025, 68: 112401, doi: 10.1007/s11432-024-4093-1
新器件
LETTER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 6
Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT
Jia, Mao; Hou, Bin; Yang, Ling; Zhang, Meng; Wu, Mei; Lu, Hao; Hong, Xitong; Xue, Zhiqiang; Du, Jiale; Chang, Qingyuan; Xiao, Qian; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2025, 68(5): 159401
Keywords: GaN HEMT; normally-off; Cu gate stack; threshold voltage stability; gate conduction mechanisms
Cite as: Jia M, Hou B, Yang L, et al. Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT. Sci China Inf Sci, 2025, 68: 159401, doi: 10.1007/s11432-024-4343-5
Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
新器件
RESEARCH PAPER
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 5
Enhanced memory window and reliability of α-IGZO FeFET enabled by atomic-layer-deposited HfO2 interfacial layer
Liu, Yinchi; Lu, Xun; Li, Shiyu; Zhang, Hao; Yang, Jining; Guo, Yeye; Golosov, Dmitriy Anatolyevich; Gu, Chenjie; Lu, Hongliang; Ji, Zhigang; Ding, Shijin; Liu, Wenjun
Sci China Inf Sci, 2025, 68(6): 160405
Keywords: HfO2; interfacial layer; Hf0.5Zr0.5O2; memory window; reliability
Cite as: Liu Y C, Lu X, Li S Y, et al. Enhanced memory window and reliability of α-IGZO FeFET enabled by atomic-layer-deposited HfO2 interfacial layer. Sci China Inf Sci, 2025, 68: 160405, doi: 10.1007/s11432-024-4429-7
新器件
LETTER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 5
Performance limit prediction of atomically thin In2O3 transistors
Yang, Zongmeng; Fang, Shibo; Xu, Linqiang; Li, Qiuhui; Dong, Jichao; Li, Ying; Wu, Baochun; Ghafoor, Mughira; Yang, Peiqi; Guo, Ying; Hou, Shimin; Luo, Zhaochu; Lu, Jing
Sci China Inf Sci, 2025, 68(4): 149403
Keywords: In2O3; ab initio quantum transport simulation; ITRS; electron-phonon coupling; thin film transistor
Cite as: Yang Z M, Fang S B, Xu L Q, et al. Performance limit prediction of atomically thin In2O3 transistors. Sci China Inf Sci, 2025, 68: 149403, doi: 10.1007/s11432-024-4316-6
Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
新器件
RESEARCH PAPER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 4
Polynomial geometric transformation based on IGZO charge trapping RAM array for machine vision calibration
Bao, Lin; Zhang, Haisu; Wang, Zongwei; Shan, Linbo; Wang, Cuimei; Cai, Yimao; Huang, Shanguo
Sci China Inf Sci, 2025, 68(6): 160403
Keywords: in-memory computing; oxide semiconductor; polynomial evaluation; charge trapping device
Cite as: Bao L, Zhang H S, Wang Z W, et al. Polynomial geometric transformation based on IGZO charge trapping RAM array for machine vision calibration. Sci China Inf Sci, 2025, 68: 160403, doi: 10.1007/s11432-024-4420-5
新器件
RESEARCH PAPER
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 4
Logic-in-memory cell enabling binary and ternary Boolean logics
Oh, Jeongyun; Jeon, Juhee; Shin, Yunwoo; Cho, Kyougah; Kim, Sangsig
Sci China Inf Sci, 2025, 68(2): 122407
Keywords: logic-in-memory; reconfigurable channel modes; ternary logic; triple-gated feedback field-effect transistors
Cite as: Oh J, Jeon J, Shin Y, et al. Logic-in-memory cell enabling binary and ternary Boolean logics. Sci China Inf Sci, 2025, 68: 122407, doi: 10.1007/s11432-024-4248-4
新器件
RESEARCH PAPER
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 4
A monolithic 3D IGZO-RRAM-SRAM-integrated architecture for robust and efficient compute-in-memory enabling equivalent-ideal device metrics
Yan, Shengzhe; Cong, Zhaori; Wang, Zi; Dai, Zhuoyu; Guo, Zeyu; Qian, Zhihang; Li, Xufan; Zheng, Xu; Chen, Chuanke; Lu, Nianduan; Dou, Chunmeng; Yang, Guanhua; Xu, Xiaoxin; Geng, Di; Yue, Jinshan; Wang, Lingfei; Li, Ling; Liu, Ming
Sci China Inf Sci, 2025, 68(2): 122404
Keywords: compute-in-memory; CIM; monolithic 3D; RRAM; IGZO; 3D-stack; simulation
Cite as: Yan S Z, Cong Z R, Wang Z, et al. A monolithic 3D IGZO-RRAM-SRAM-integrated architecture for robust and efficient compute-in-memory enabling equivalent-ideal device metrics. Sci China Inf Sci, 2025, 68: 122404, doi: 10.1007/s11432-024-4078-1
新器件
RESEARCH PAPER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 3
Keywords: ferroelectric memristors; optimal DC power; synaptic devices; potentiation and depression; hafnium silicon oxide
Cite as: Youn C, Kim S. Improved synaptic properties of HfSiOx-based ferroelectric memristors by optimizing Ti/N ratio in TiN top electrode for neuromorphic computing. Sci China Inf Sci, 2025, 68: 202404, doi: 10.1007/s11432-025-4483-1
新器件
RESEARCH PAPER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 3
Cryptographic characteristics of true random number generators using gated silicon nanosheet diodes
Jeon, Juhee; Shin, Yunwoo; Heo, Hyojoo; Son, Jaemin; Ryu, Seungho; Cho, Kyoungah; Kim, Sangsig
Sci China Inf Sci, 2025, 68(6): 162401
Keywords: true random number generator; gated p+-i-n+ diode; image encryption; secret key; silicon nanosheet
Cite as: Jeon J, Shin Y, Heo H, et al. Cryptographic characteristics of true random number generators using gated silicon nanosheet diodes. Sci China Inf Sci, 2025, 68: 162401, doi: 10.1007/s11432-024-4317-6
新器件
RESEARCH PAPER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 3
Ferroelectrically gated two-dimensional bismuth oxyselenides for strain-invariant flexible synaptic thin-film transistors
Wen, Jie; Xiao, Fei; Luo, Zheng-Dong; Tan, Dongxin; Gan, Xuetao; Zhang, Dawei; Chu, Zhufei; Xia, Yinshui; Liu, Yan; Han, Genquan
Sci China Inf Sci, 2025, 68(5): 152401
Keywords: Bi2O2Se; FeFET; nonvolatile memory; flexible device; synaptic transistor
Cite as: Wen J, Xiao F, Luo Z-D, et al. Ferroelectrically gated two-dimensional bismuth oxyselenides for strain-invariant flexible synaptic thin-film transistors. Sci China Inf Sci, 2025, 68: 152401, doi: 10.1007/s11432-024-4304-y
新器件
LETTER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 3
3D self-rectifying memristive ternary content addressable memory for massive and exact in-memory search
Yu, Yingjie; Ren, Shengguang; Yang, Ling; Li, Yi; Miao, Xiangshui
Sci China Inf Sci, 2025, 68(3): 139402
Keywords: ternary content addressable memory; three-dimensional; self-rectifying memristor; in-memory search; parallelism
Cite as: Yu Y J, Ren S G, Yang L, et al. 3D self-rectifying memristive ternary content addressable memory for massive and exact in-memory search. Sci China Inf Sci, 2025, 68: 139402, doi: 10.1007/s11432-024-4253-9
新器件
RESEARCH PAPER
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 3
Optimizing hardware-software co-design based on non-ideality in memristor crossbars for in-memory computing
Jiang, Pinfeng; Song, Danzhe; Huang, Menghua; Yang, Fan; Wang, Letian; Liu, Pan; Miao, Xiangshui; Wang, Xingsheng
Sci China Inf Sci, 2025, 68(2): 122406
Keywords: memristor crossbar; IR-drop; neural network; activation function; hardware-software co-design
Cite as: Jiang P F, Song D Z, Huang M H, et al. Optimizing hardware-software co-design based on non-ideality in memristor crossbars for in-memory computing. Sci China Inf Sci, 2025, 68: 122406, doi: 10.1007/s11432-024-4240-x
Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
新器件
LETTER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 2
A parallel computing-in-memory accelerator utilizing FeRAM array with retention loss correction
Liu, Can; Shen, Zhihao; Mao, Wei; Li, Bo; Lv, Xiaomeng; Li, Fuyi; Xiao, Peng; Hong, Haiqiao; Zhao, Shirui; Zheng, Siying; Li, Xiaoxi; Yu, Xiao; Zhou, Jiuren; Chen, Bing; Liu, Yan; Han, Genquan
Sci China Inf Sci, 2025, 68(6): 160409
Keywords: ferroelectric capacitor; non-ideality; computing-in-memory; 1T1C; parallel; retention loss; FeRAM; array
Cite as: Liu C, Shen Z H, Mao W, et al. A parallel computing-in-memory accelerator utilizing FeRAM array with retention loss correction. Sci China Inf Sci, 2025, 68: 160409, doi: 10.1007/s11432-024-4421-0
Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
新器件
RESEARCH PAPER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 2
Crystal orientation-modulated ferroelectric and dielectric properties in Hf0.5Zr0.5O2 thin films
Li, Yu-Chun; Li, Xiao-Xi; Xu, Zhongshan; Huang, Zi-Ying; Yang, Yingguo; Zhu, Xiao-Na; Li, Ming; Zhang, David Wei; Lu, Hong-Liang
Sci China Inf Sci, 2025, 68(6): 160406
Keywords: ferroelectric; Hf0.5Zr0.5O2; oxygen dose; GIWAXS; orientation; dielectric
Cite as: Li Y-C, Li X-X, Xu Z S, et al. Crystal orientation-modulated ferroelectric and dielectric properties in Hf0.5Zr0.5O2 thin films. Sci China Inf Sci, 2025, 68: 160406, doi: 10.1007/s11432-024-4428-8
Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
新器件
RESEARCH PAPER
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 2
Improvement with low operation voltage in ultrathin La-doped Hf0.5Zr0.5O2 ferroelectric capacitors
Zeng, Min; Yan, Shiwei; Liu, Shiyuan; Fu, Tianyue; Liu, Honggang; Hu, Qianlan; Wu, Yanqing
Sci China Inf Sci, 2025, 68(6): 160402
Keywords: atomic layer deposition; hafnium zirconium oxide; HZO; ferroelectric capacitor; endurance; reliability
Cite as: Zeng M, Yan S W, Liu S Y, et al. Improvement with low operation voltage in ultrathin La-doped Hf0.5Zr0.5O2 ferroelectric capacitors. Sci China Inf Sci, 2025, 68: 160402, doi: 10.1007/s11432-024-4412-3
新器件
LETTER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 2
Al2O3/AlN/GaN MOS-HEMTs on 6-inch silicon substrate with high transconductance and state-of-the-art fmax×LG
Qin, Lingjie; Zhu, Jiejie; Zhang, Bowen; Zhou, Yuxi; Duan, Huantao; Ma, Huimei; Li, Mengdi; Huang, Simei; Rao, Jin; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2025, 68(3): 139403
Keywords: Al2O3/AlN/GaN; regrown ohmic; Si substrate; low-damage remote plasma oxidation pre-treatment; radio-frequency
Cite as: Qin L J, Zhu J J, Zhang B W, et al. Al2O3/AlN/GaN MOS-HEMTs on 6-inch silicon substrate with high transconductance and state-of-the-art fmax×LG. Sci China Inf Sci, 2025, 68: 139403, doi: 10.1007/s11432-024-4268-5
新器件
LETTER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 2
An AND-type 1T-FeFET array with robust write and read operations
Xu, Jiacheng; Zhao, Jiayi; Zhang, Hongrui; Qian, Haoji; Gu, Jiani; Chen, Bowen; Lin, Gaobo; Shen, Rongzong; Song, Xinda; Liu, Huan; Ding, Yian; Ma, Minglei; Zhang, Miaomiao; Yu, Xiao; Chen, Bing; Cheng, Ran; Xu, Gaobo; Yin, Huaxiang; Liu, Yan; Chen, Jiajia; Jin, Chengji; Han, Genquan
Sci China Inf Sci, 2025, 68(2): 129404
Keywords: HfO2-based Ferroelectric; FeFET; AND-type array; non-volatile memory; transistor
Cite as: Xu J C, Zhao J Y, Zhang H R, et al. An AND-type 1T-FeFET array with robust write and read operations. Sci China Inf Sci, 2025, 68: 129404, doi: 10.1007/s11432-024-4245-7
新器件
LETTER
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 2
Dynamic performance enhancement in Ti/Au ohmic contacts on β-Ga2O3- on-SiC substrates: evidence from pulsed measurements
Liu, Chenyu; Wang, Yibo; Xu, Wenhui; Huang, Shuqi; Yu, Chunxiao; Yang, Zeyu; Jia, Xiaole; Li, Xiaoxi; Li, Bochang; Luo, Zhengdong; Fang, Cizhe; Liu, Yan; You, Tiangui; Ou, Xin; Han, Genquan
Sci China Inf Sci, 2025, 68(1): 119403
Keywords: Ga2O3; Titanium/Gold ohmic contact; heterogeneous; pulsed measurement; Gallium Oxide
Cite as: Liu C Y, Wang Y B, Xu W H, et al. Dynamic performance enhancement in Ti/Au ohmic contacts on β-Ga2O3- on-SiC substrates: evidence from pulsed measurements. Sci China Inf Sci, 2025, 68: 119403, doi: 10.1007/s11432-024-4195-4
新器件
LETTER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 2
Orbitronics for energy-efficient magnetization switching
Yao, Yuxuan; Zhu, Daoqian; Xia, Qingtao; Liang, Jianing; Jiang, Yuhao; Peng, Zhiyang; Li, Jiaxu; Xiao, Chen; Xu, Renyou; Wang, Wenwen; Shang, Xiantao; Lu, Shiyang; Zhu, Dapeng; Liu, Hong-Xi; Cao, Kaihua; Zhao, Weisheng
Sci China Inf Sci, 2025, 68(1): 119402
Keywords: orbitronics; orbital hall effect; spin-orbit torque; current-induced magnetization switching; 400℃ annealing
Cite as: Yao Y X, Zhu D Q, Xia Q T, et al. Orbitronics for energy-efficient magnetization switching. Sci China Inf Sci, 2025, 68: 119402, doi: 10.1007/s11432-024-4186-6
新器件
RESEARCH PAPER
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 2
Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field-effect diode based on AlGaN/GaN HEMT
Wang, Fangzhou; Gao, Changhong; Ding, Guojian; Yu, Cheng; Wang, Zhuocheng; Wang, Xiaohui; Feng, Qi; Yu, Ping; Zuo, Peng; Chen, Wanjun; Wang, Yang; Jia, Haiqiang; Chen, Hong; Zhang, Bo; Wang, Zeheng
Sci China Inf Sci, 2025, 68(1): 112403
Keywords: Schottky-MIS cascode anode; lateral field-effect diode; LFED; ultralow reverse leakage current; ILEAK; forward drop and reverse leakage trade-off; AlGaN/GaN HEMTs
Cite as: Wang F Z, Gao C H, Ding G J, et al. Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field-effect diode based on AlGaN/GaN HEMT. Sci China Inf Sci, 2025, 68: 112403, doi: 10.1007/s11432-024-4197-y
新器件
LETTER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 1
Over 3 GW/cm2 low leakage vertical β-Ga2O3 Schottky rectifier featuring self-aligned multi-zone junction termination extension
Wan, Jiangbin; Wang, Hengyu; Tao, Tiancheng; Cheng, Haoyuan; Wang, Ce; Zhang, Chi; Sheng, Kuang
Sci China Inf Sci, 2026, 69(2): 129404
Keywords: power semiconductor; ultra-wide bandgap; gallium oxide; junction termination extension; breakdown voltage
Cite as: Wan J B, Wang H Y, Tao T C, et al. Over 3 GW/cm2 low leakage vertical β-Ga2O3 Schottky rectifier featuring self-aligned multi-zone junction termination extension. Sci China Inf Sci, 2026, 69: 129404, doi: 10.1007/s11432-025-4617-1
新器件
LETTER
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 1
Revisiting a classic form of memory-centric computing—lookup table
Dai, Weibang; Chen, Xiaogang; Song, Sannian; Chen, Houpeng; Li, Shunfen; Hong, Tao; Jiao, Zhenhao; Song, Zhitang
Sci China Inf Sci, 2026, 69(1): 119404
Keywords: LUT-based computing; near-memory computing; compute-in-memory; emerging non-volatile memory; memory-centric computing
Cite as: Dai W B, Chen X G, Song S N, et al. Revisiting a classic form of memory-centric computing—lookup table. Sci China Inf Sci, 2026, 69: 119404, doi: 10.1007/s11432-025-4521-4
新器件
REVIEW
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 1
Model quantization for computing-in-memory: a survey
Sun, Sifan; Bai, Jinyu; Chen, Hanting; Deng, Kaiwen; Xie, Zhiwei; Li, Jingjing; Cao, Bin; Zhang, He; Kang, Wang; Zhao, Weisheng
Sci China Inf Sci, 2025, 68(11): 211401
Keywords: deep neural network; model quantization; quantized neural network; computing-in-memory; neural network accelerator
Cite as: Sun S F, Bai J Y, Chen H T, et al. Model quantization for computing-in-memory: a survey. Sci China Inf Sci, 2025, 68: 211401, doi: 10.1007/s11432-024-4522-8
新器件
LETTER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 1
Keywords: magnetic tunnel junction; spin-orbit torque; magnetic random-access memory; spin transfer torque; magnetization switching
Cite as: Ye H J, Yan Z J, Wang M, et al. Critical current for field-free switching of the in-plane magnetization in the three-terminal magnetic tunnel junction. Sci China Inf Sci, 2025, 68: 209404, doi: 10.1007/s11432-025-4455-2
新器件
LETTER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 1
Doping and minority carrier lifetime uniformity of 4H-SiC homoepitaxial layers: role of C/Si ratio distribution
Liu, Wenji; Tong, Zhouyu; Zhang, Cong; Han, Xuefeng; Wang, Rong; Yang, Deren; Pi, Xiaodong
Sci China Inf Sci, 2025, 68(10): 209401
Keywords: 4H-SiC; homoepitaxy; C/Si ratio; doping uniformity; minority carrier lifetime
Cite as: Liu W J, Tong Z Y, Zhang C, et al. Doping and minority carrier lifetime uniformity of 4H-SiC homoepitaxial layers: role of C/Si ratio distribution. Sci China Inf Sci, 2025, 68: 209401, doi: 10.1007/s11432-024-4385-5
Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
新器件
LETTER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 1
Keywords: 2T0C DRAM; ITO transistors; 3D-stacked; write speed; data retention
Cite as: Zhu S W, Hu Q L, Gu C R, et al. Scaled 3D-stacked 2T0C DRAM based on indium-tin-oxide transistors with long data retention and fast write speed of 10 ns. Sci China Inf Sci, 2025, 68: 160410, doi: 10.1007/s11432-024-4413-2
Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
新器件
PERSPECTIVE
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 1
Prospects and challenges of HfO2-based ferroelectric devices
Takagi, Shinichi; Takenaka, Mitsuru; Toprasertpong, Kasidit
Sci China Inf Sci, 2025, 68(6): 160407
Keywords: ferroelectric device; FeFET; FeRAM; HfO2; reservoir computing
Cite as: Takagi S, Takenaka M, Toprasertpong K. Prospects and challenges of HfO2-based ferroelectric devices. Sci China Inf Sci, 2025, 68: 160407, doi: 10.1007/s11432-025-4372-4
新器件
LETTER
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 1
Analysis and fabrication of a SiC super-junction termination structure in a state of charge imbalance
Kang, Haobo; Du, Fengyu; Yuan, Hao; Bai, Boyi; Zhou, Yu; Li, Jingyu; Han, Chao; Tang, Xiaoyan; Song, Qingwen; Zhang, Yuming
Sci China Inf Sci, 2025, 68(4): 149404
Keywords: silicon carbide; super-junction; charge-imbalance; termination structure; schottky diode
Cite as: Kang H B, Du F Y, Yuan H, et al. Analysis and fabrication of a SiC super-junction termination structure in a state of charge imbalance. Sci China Inf Sci, 2025, 68: 149404, doi: 10.1007/s11432-024-4318-6
新器件
LETTER
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 1
24.4 THz·V fT×BV figure-of-merit AlN/GaN/AlN MISHEMTs with thin AlN buffer layer
Zhang, Chaoqun; Zhou, Hong; Alghamdi, Sami; Zhang, Kun; Liu, Zhihong; Hao, Yue; Zhang, Jingcheng
Sci China Inf Sci, 2025, 68(3): 139401
Keywords: AlN/GaN; MISHEMT; thin AlN buffer; fT×BV; Johnson figure-of-merit
Cite as: Zhang C Q, Zhou H, Alghamdi S, et al. 24.4 THz·V fT×BV figure-of-merit AlN/GaN/AlN MISHEMTs with thin AlN buffer layer. Sci China Inf Sci, 2025, 68: 139401, doi: 10.1007/s11432-024-4255-5
新器件
LETTER
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 1
Substrate bias effects in p-channel GaN-on-Si transistors
Zhao, Mengyao; Ma, Jie; Yang, Lanlan; Pan, Chuanqi; Wang, Denggui; Zhou, Jianjun; Li, Sheng; Wei, Jiaxing; Zhang, Long; Liu, Siyang; Sun, Weifeng
Sci China Inf Sci, 2025, 68(1): 119405
Keywords: buffer traps; GaN-on-Si transistor; p-channel; space charge; substrate bias effects; vertical electric field; back gate
Cite as: Zhao M Y, Ma J, Yang L L, et al. Substrate bias effects in p-channel GaN-on-Si transistors. Sci China Inf Sci, 2025, 68: 119405, doi: 10.1007/s11432-024-4213-4
新器件
LETTER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 1
Physics based circuit compatible model for hybrid antiferroelectric random access memory
Wu, Qiuxia; Peng, Yue; Xiao, Wenwu; Ma, Wenxuan; Zhang, Shuo; Sun, Litao; Zhang, Chunfu; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2025, 68(1): 119401
Keywords: antiferroelectric; AFRAM; EDA; compute-in-memory; non-volatile
Cite as: Wu Q X, Peng Y, Xiao W W, et al. Physics based circuit compatible model for hybrid antiferroelectric random access memory. Sci China Inf Sci, 2025, 68: 119401, doi: 10.1007/s11432-024-4190-4
新器件
LETTER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Keywords: spintronics; spin torque nano-oscillator; magnetic tunnel junction; nonlinear auto-oscillator theory; spin orbit torque
Cite as: Wang Z X, Cai W L, Du A, et al. Nonlinearity modulation of auto-oscillations in three-terminal magnetic tunnel junctions. Sci China Inf Sci, 2026, 69: 209401, doi: 10.1007/s11432-025-4877-0
新器件
LETTER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
Nitrogen-vacancy-driven degradation mechanism in ferroelectric wurtzite AlScN
Wang, Ruiqing; Zhou, Jiuren; Yuan, Xihui; Zhu, Feng; Zheng, Siying; Sun, Wenxin; Wang, Xinghui; Xu, Haiwen; Li, Bochang; Liu, Yan; Han, Genquan
Sci China Inf Sci, 2026, 69(9): 199401
Keywords: wurtzite ferroelectrics; AlScN; Nitrogen vacancy; reliability; endurance
Cite as: Wang R Q, Zhou J R, Yuan X H, et al. Nitrogen-vacancy-driven degradation mechanism in ferroelectric wurtzite AlScN. Sci China Inf Sci, 2026, 69: 199401, doi: 10.1007/s11432-025-4795-1
新器件
RESEARCH PAPER
Webpage
Webpage-cn
SpringerLink
Google Scholar
Keywords: computing-in-memory; general-purpose computing; precision extension; flash memory
Cite as: Feng Y, Guo X Y, Chen C, et al. A 64-bit high-precision flash computing-in-memory architecture with a parallel input scheme. Sci China Inf Sci, 2026, 69: 192401, doi: 10.1007/s11432-025-4826-6
新器件
LETTER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
E-mode reverse p-i-n junction gate GaN HEMT with high VTH and enhanced gate drive voltage
Jia, Mao; Hou, Bin; Yang, Ling; Xue, Zhiqiang; Zhang, Meng; Wu, Mei; Lu, Hao; Hong, Xitong; Xiao, Qian; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2026, 69(8): 189404
Keywords: normally-off; AlGaN/GaN HEMT; threshold voltage modulation; time-dependent gate breakdown; high gate operation voltage
Cite as: Jia M, Hou B, Yang L, et al. E-mode reverse p-i-n junction gate GaN HEMT with high VTH and enhanced gate drive voltage. Sci China Inf Sci, 2026, 69: 189404, doi: 10.1007/s11432-025-4679-4
新器件
LETTER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
Dynamic switching and oxygen ion transport in (Hf+Zr)O2-x ferroelectrics modulated by Al2O3-x interfaces
Feng, Ze; Liu, Huan; Pan, Weiwen; Zhang, Boyuan; Liu, Ao; Zheng, Xu; Shan, Yiyang; Zhao, Xiang; Huang, Rong; Wang, Weihua; Cheng, Yahui; Lu, Feng; Cui, Yi; Dingsun, An; Han, Genquan; Liu, Hui; Dong, Hong
Sci China Inf Sci, 2026, 69(8): 189403
Keywords: hafnium zirconium oxide; ferroelectric; dynamic switching; oxygen vacancy; transport mechanism
Cite as: Feng Z, Liu H, Pan W W, et al. Dynamic switching and oxygen ion transport in (Hf+Zr)O2-x ferroelectrics modulated by Al2O3-x interfaces. Sci China Inf Sci, 2026, 69: 189403, doi: 10.1007/s11432-025-4697-y
新器件
LETTER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
1.4 kV β-Ga2O3 VDMOSFET with high-temperature nitrogen-implanted current blocking layer
Lu, Xing; Hu, Yunjian; Li, Jiajun; Lai, Yuru; Liao, Zhengyi; Zeng, Chunhong; Zhang, Xiaodong; Ng, Kar Wei; Wong, Man Hoi; Chen, Zimin; Pei, Yanli; Wang, Gang
Sci China Inf Sci, 2026, 69(8): 189402
Keywords: β-Ga2O3;VDMOSFET; high-temperature ion implantation; enhancement mode; power device
Cite as: Lu X, Hu Y J, Li J J, et al. 1.4 kV β-Ga2O3 VDMOSFET with high-temperature nitrogen-implanted current blocking layer. Sci China Inf Sci, 2026, 69: 189402, doi: 10.1007/s11432-025-4717-9
新器件
POSITION PAPER
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
Keywords: \tau scaling; LogicFolding; gear ratio; wafer-to-wafer hybrid bonding; Unified Bus; Hi-ONE
Cite as: He T B. A time scaling theory for multi-layer electronic systems. Sci China Inf Sci, 2026, 69: 183401, doi: 10.1007/s11432-026-5028-5
新器件
LETTER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
VGSOT-BNN: an energy-efficient VGSOT-MRAM-based in-memory computing macro with offset-tolerant sensing for binary neural networks
Wang, Chao; Gao, Qihang; Tong, Zhongzhen; Guo, Xianzeng; Qiu, Yulong; Wang, Zhaohao; Zhao, Weisheng
Sci China Inf Sci, 2026, 69(7): 179402
Keywords: in-memory computing; voltage-gated spin-orbit torque magnetic random access memory; binary neural network; magnetic tunnel junction; low power
Cite as: Wang C, Gao Q H, Tong Z Z, et al. VGSOT-BNN: an energy-efficient VGSOT-MRAM-based in-memory computing macro with offset-tolerant sensing for binary neural networks. Sci China Inf Sci, 2026, 69: 179402, doi: 10.1007/s11432-025-4707-8
新器件
LETTER
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
Scattering-suppression induced two-dimensional hole gas mobility enhancement in GaN p-FETs with a multiperiod scattering-modulated barrier layer
Liu, Xu; Xu, Shengrui; Tao, Hongchang; Su, Huake; Zhang, Tao; Xie, Lei; Wang, Xinhao; Gao, Yuan; Zhang, Jincheng; Hao, Yue
Sci China Inf Sci, 2026, 69(7): 179401
Keywords: p-channel FET; 2DHG; mobility; scattering; GaN
Cite as: Liu X, Xu S R, Tao H C, et al. Scattering-suppression induced two-dimensional hole gas mobility enhancement in GaN p-FETs with a multiperiod scattering-modulated barrier layer. Sci China Inf Sci, 2026, 69: 179401, doi: 10.1007/s11432-025-4582-7
Special Topic: Advanced Optoelectronics Based on Two-Dimensional Materials
新器件
RESEARCH PAPER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
Mechanism of photocarrier transport in vacuum ultraviolet photodetector based on hexagonal boron nitride nanosheets
Fang, Wannian; Li, Qiang; Chen, Ransheng; Chen, Youwei; Li, Jiaxing; Liu, Haifeng; Lin, Ziyan; Ning, Jing; Hao, Yue
Sci China Inf Sci, 2026, 69(7): 170405
Keywords: hexagonal boron nitride; self-assembly; vacuum ultraviolet photodetector; first-principles calculations; photocarrier transport
Cite as: Fang W N, Li Q, Chen R S, et al. Mechanism of photocarrier transport in vacuum ultraviolet photodetector based on hexagonal boron nitride nanosheets. Sci China Inf Sci, 2026, 69: 170405, doi: 10.1007/s11432-026-4966-8
Special Topic: Advanced Optoelectronics Based on Two-Dimensional Materials
新器件
RESEARCH PAPER
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
Asymmetric WSe2 reconfigurable devices for logic-in-memory computing: contact barrier engineering and floating gate-controlled operation
Liu, Wancai; Shen, Xue; Guo, Jiazhou; Ma, Wenxuan; Luo, Yisen; Hao, Yue; Ning, Jing; Zhang, Jincheng
Sci China Inf Sci, 2026, 69(7): 170404
Keywords: reconfigurable transistor; logic-in-memory; floating gate; asymmetric; contact barrier engineering
Cite as: Liu W C, Shen X, GUO J Z, et al. Asymmetric WSe2 reconfigurable devices for logic-in-memory computing: contact barrier engineering and floating gate-controlled operation. Sci China Inf Sci, 2026, 69: 170404, doi: 10.1007/s11432-025-4954-6
新器件
RESEARCH PAPER
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
Thermal analysis and management for RRAM-based computing-in-memory chips
Ma, Awang; Gao, Bin; Yu, Ruihua; Zhang, Qingtian; Yao, Peng; Tang, Jianshi; Qian, He; Wu, Huaqiang
Sci China Inf Sci, 2026, 69(6): 162404
Keywords: RRAM-based CIM chips; thermal analysis; static thermal management; latency-thermal co-optimization; dynamic thermal management
Cite as: Ma A W, Gao B, Yu R H, et al. Thermal analysis and management for RRAM-based computing-in-memory chips. Sci China Inf Sci, 2026, 69: 162404, doi: 10.1007/s11432-025-4708-9
新器件
LETTER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
High threshold voltage and enhanced threshold voltage stability of Schottky p-GaN gate HEMT by p-GaN bridge engineering
Zhang, Kuo; Liu, Kai; He, Yunlong; Wang, Chong; Zhang, Wentao; Zheng, Xuefeng; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2026, 69(5): 159402
Keywords: Schottky p-GaN gate HEMTs; threshold voltage; p-GaN bridge; charge storage; drain/gate bias stress; threshold voltage stability
Cite as: Zhang K, Liu K, He Y L, et al. High threshold voltage and enhanced threshold voltage stability of Schottky p-GaN gate HEMT by p-GaN bridge engineering. Sci China Inf Sci, 2026, 69: 159402, doi: 10.1007/s11432-025-4616-7
新器件
LETTER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
High power density X-band source-connected field plate-free AlGaN/GaN HEMT with recessed gate oxidation process
Lu, Hao; Ma, Xiaohua; Deng, Longge; Yang, Ling; Hou, Bin; Zhang, Meng; Wu, Mei; Hao, Yue
Sci China Inf Sci, 2026, 69(3): 139401
Keywords: AlGaN/GaN; HEMT; load-pull; power amplifier; recessed gate processing
Cite as: Lu H, Ma X H, Deng L G, et al. High power density X-band source-connected field plate-free AlGaN/GaN HEMT with recessed gate oxidation process. Sci China Inf Sci, 2026, 69: 139401, doi: 10.1007/s11432-025-4494-2
新器件
RESEARCH PAPER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
Quaternary true random number generator comprising gated p+–i–n+ diodes
Heo, Hyojoo; Shin, Yunwoo; Jeon, Juhee; Park, Taeho; Ryu, Seungho; Cho, Kyoungah; Kim, Sangsig
Sci China Inf Sci, 2026, 69(3): 132404
Keywords: quaternary true random number generator; gated p+–i–n+ diode; quaternary secret key; image encryption; data density
Cite as: Heo H, Shin Y, Jeon J, et al. Quaternary true random number generator comprising gated p+–i–n+ diodes. Sci China Inf Sci, 2026, 69: 132404, doi: 10.1007/s11432-025-4626-6
新器件
RESEARCH PAPER
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
High ON/OFF and high FoM of fmax×BV×Lg InAlN/GaN HEMTs by using polycrystalline-AlN cap
Li, Shiming; Lu, Hao; Yang, Ling; Wu, Mei; Hou, Bin; Zhang, Meng; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2026, 69(3): 132403
Keywords: InAlN/GaN; high-electron-mobility transistors; cap layer; breakdown voltage; radio frequency
Cite as: Li S M, Lu H, Yang L, et al. High ON/OFF and high FoM of fmax×BV×Lg InAlN/GaN HEMTs by using polycrystalline-AlN cap. Sci China Inf Sci, 2026, 69: 132403, doi: 10.1007/s11432-025-4572-5
新器件
LETTER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
High-performance true random number generator based on SOT-MTJ spin relaxation
Yin, Jialiang; Zhang, Xiuye; Zhang, Boyan; Zhang, Bolin; Cai, Wenlong; Du, Ao; Tang, Binchao; Zhang, Haowei; Bao, Shijian; Li, Chunyi; Zhu, Daoqian; Shi, Kewen; Liu, Hongxi; Zeng, Lang; Zhang, He; Cao, Kaihua; Zhao, Weisheng
Sci China Inf Sci, 2026, 69(2): 129403
Keywords: spin-orbit torque; SOT; magnetic tunnel junction; MTJ; true random number generator; TRNG; relaxation time; security primitive
Cite as: Yin J L, Zhang X Y, Zhang B Y, et al. High-performance true random number generator based on SOT-MTJ spin relaxation. Sci China Inf Sci, 2026, 69: 129403, doi: 10.1007/s11432-025-4595-5
新器件
LETTER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
Coordinated B diffusion Gaussian distribution AlGaN/GaN HEMT device by quasi-van der Waals epitaxy
Zhang, Yaning; Wu, Haidi; Zhang, Haoran; Li, Shiyu; Ji, Xinchen; Yang, Zhichun; Zhang, Xinbo; Bai, Ling; Zheng, Juncheng; Wang, Dong; Hao, Yue; Ning, Jing; Zhang, Jincheng
Sci China Inf Sci, 2026, 69(2): 129402
Keywords: h-BN; coordinated B diffusion; AlGaN HEMT; GaN HEMT; quasi-van der Waals epitaxy; ION/IOFF ratio
Cite as: Zhang Y N, Wu H D, Zhang H R, et al. Coordinated B diffusion Gaussian distribution AlGaN/GaN HEMT device by quasi-van der Waals epitaxy. Sci China Inf Sci, 2026, 69: 129402, doi: 10.1007/s11432-025-4482-1
新器件
LETTER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
Physical structure-based small signal modeling for GaN Fin-HEMTs
Zhao, Ziyue; Lu, Yang; Yi, Chupeng; Feng, Ting; Liu, Xin; Zhao, Wei; Yao, Guanghai; Chen, Yilin; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2026, 69(2): 129401
Keywords: Fin-HEMT; small signal model; GaN; physical structure-based; parameter
Cite as: Zhao Z Y, Lu Y, Yi C P, et al. Physical structure-based small signal modeling for GaN Fin-HEMTs. Sci China Inf Sci, 2026, 69: 129401, doi: 10.1007/s11432-025-4514-x
新器件
RESEARCH PAPER
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
Universal content-addressable memory with high-endurance flash for functionally complete logic-in-memory computing
Guo, Xinyi; Feng, Yang; Guo, Peng; Yang, Shaoqi; Zhao, Xiaohuan; Yang, Guangkuo; Wu, Jixuan; Zhan, Xuepeng; Chen, Jiezhi
Sci China Inf Sci, 2026, 69(2): 122403
Keywords: reconfigurable; multifunctional; universal content addressable memory; boolean logic; in-memory computing
Cite as: Guo X Y, Feng Y, Guo P, et al. Universal content-addressable memory with high-endurance flash for functionally complete logic-in-memory computing. Sci China Inf Sci, 2026, 69: 122403, doi: 10.1007/s11432-025-4507-0
新器件
RESEARCH PAPER
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
High linearity and high-power of composite component graded-AlGaN/graded-InGaN/GaN HEMTs
Yu, Qian; Yang, Ling; Zhang, Long; Shi, Chunzhou; Hou, Bin; Wu, Mei; Zhang, Meng; Lu, Hao; Zou, Xu; Gao, Wenze; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2026, 69(2): 122402
Keywords: GaN; AlGa; AlGa HEMTs; GaN HEMTs; graded-AlGaN; graded-InGaN; high linearity
Cite as: Yu Q, Yang L, Zhang L, et al. High linearity and high-power of composite component graded-AlGaN/graded-InGaN/GaN HEMTs. Sci China Inf Sci, 2026, 69: 122402, doi: 10.1007/s11432-025-4527-1
新器件
LETTER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
32 x 32 β-Ga2O3 MOS solar-blind ultraviolet detector array and its properties
Chen, Haifeng; Wu, Chenlu; Liu, Xuyang; Chen, Chunling; Wang, Huorong; Lu, Qin; Liu, Xiangtai; Ni, Jinyu; Wang, Zhan; Wang, Shaoqing
Sci China Inf Sci, 2026, 69(1): 119403
Keywords: Ga2O3; solar-blind ultraviolet; MOSFET; photodetector array; gate-controlled reset
Cite as: Chen H F, Wu C L, Liu X Y, et al. 32 x 32 β-Ga2O3 MOS solar-blind ultraviolet detector array and its properties. Sci China Inf Sci, 2026, 69: 119403, doi: 10.1007/s11432-025-4506-1
新器件
LETTER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
A 1-10 GHz frequency-agile high-power GaN linear photoconductive semiconductor switch
Wang, Xu; Lu, Xiaoli; Wang, Ye; Yang, Ruiqi; Chen, Xiangjin; Liu, Jingliang; He, Yunlong; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2026, 69(1): 119402
Keywords: frequency-agile RF device; linearly modulated PCSS; GaN microwave photonics; high power RF device; X-band
Cite as: Wang X, Lu X L, Wang Y, et al. A 1-10 GHz frequency-agile high-power GaN linear photoconductive semiconductor switch. Sci China Inf Sci, 2026, 69: 119402, doi: 10.1007/s11432-025-4499-6
新器件
LETTER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
Variation-aware optimization of salicide-enhanced tunnel FET technology based on 300 mm foundry platform
Wang, Kaifeng; Li, Yiqing; Ren, Ye; Wu, Yongqin; Bu, Weihai; Huang, Qianqian; Huang, Ru
Sci China Inf Sci, 2026, 69(1): 119401
Keywords: tunnel FET; variability; ion implantation; CMOS; silicide
Cite as: Wang K F, Li Y Q, Ren Y, et al. Variation-aware optimization of salicide-enhanced tunnel FET technology based on 300 mm foundry platform. Sci China Inf Sci, 2026, 69: 119401, doi: 10.1007/s11432-025-4495-3
新器件
RESEARCH PAPER
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
First demonstration of heterogeneous integrated limiter chip with breakdown-enhanced GaN SBDs
Zhang, Jincheng; Huo, Shudong; Zhang, Zhengxing; Xiang, Mengjiao; Zheng, Menghan; Liu, Shen; Zhang, Yachao; Song, Xiufeng; Zhou, Hong; Dang, Kui; Ning, Jing; Hao, Yue
Sci China Inf Sci, 2026, 69(1): 112403
Keywords: gallium nitride; GaN; Schottky barrier diode; SBD; limiter; heterogeneous integrate
Cite as: Zhang J C, Huo S D, Zhang Z X, et al. First demonstration of heterogeneous integrated limiter chip with breakdown-enhanced GaN SBDs. Sci China Inf Sci, 2026, 69: 112403, doi: 10.1007/s11432-025-4681-1
新器件
RESEARCH PAPER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
Keywords: bifunctional monolithic device; 360◦ omnidirectional photodetector; self-driven photodetection; artificial synapse; (In,Ga)N nanowire; neural network
Cite as: Chang Y Y, Jiang M, Ji L, et al. Bifunctional monolithic transparent device for both neuromorphic computing and omnidirectional self-driven photodetection. Sci China Inf Sci, 2025, 68: 202403, doi: 10.1007/s11432-024-4360-9
新器件
RESEARCH PAPER
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
High-performance SiN/AlGaN/GaN MIS-HEMTs on Si substrate with LPCVD-SiN passivation and n+-InGaN ohmic contacts
Li, Mengdi; Zhu, Jiejie; Zhang, Sheng; Zhang, Bowen; Zhou, Yuxi; Yuan, Dayan; Qin, Lingjie; Zhang, Mingchen; Chang, Qingyuan; Yi, Chupeng; Wei, Ke; Liu, Xinyu; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2025, 68(10): 202402
Keywords: GaN metal-insulator-semiconductor high electron mobility transistors; MIS-HEMTs; low pressure chemical vapor deposition SiN; regrown ohmic; Si substrate; low-voltage RF applications
Cite as: Li M D, Zhu J J, Zhang S, et al. High-performance SiN/AlGaN/GaN MIS-HEMTs on Si substrate with LPCVD-SiN passivation and n+-InGaN ohmic contacts. Sci China Inf Sci, 2025, 68: 202402, doi: 10.1007/s11432-024-4460-y
新器件
REVIEW
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
Expansion of the memory pyramid in the era of large models: compute-intensive compute-in-memory and memory-intensive compute-in-memory
Liu, Zhichao; Zhang, Yanqi; Zhang, Zhican; Yang, Yi; Zhang, Zhaoyang; Wang, Xing; Chen, Jinwu; Li, Xiaomin; Si, Xin; Yang, Jun
Sci China Inf Sci, 2025, 68(10): 201401
Keywords: compute-in-memory; artificial intelligence; memory pyramid; compute-intensive; memory-intensive
Cite as: Liu Z C, Zhang Y Q, Zhang Z C, et al. Expansion of the memory pyramid in the era of large models: compute-intensive compute-in-memory and memory-intensive compute-in-memory. Sci China Inf Sci, 2025, 68: 201401, doi: 10.1007/s11432-024-4354-y
新器件
LETTER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
3-bit memory operation of capacitor-less one-transistor one-diode DRAM cell
Ryu, Seungho; Cho, Kyoungah; Kim, Sangsig
Sci China Inf Sci, 2025, 68(9): 199401
Keywords: amorphous indium-tin-gallium-zinc-oxide; thin-film transistor; gated silicon diode; capacitor-less DRAM; multibit memory
Cite as: Ryu S, Cho K, Kim S. 3-bit memory operation of capacitor-less one-transistor one-diode DRAM cell. Sci China Inf Sci, 2025, 68: 199401, doi: 10.1007/s11432-025-4389-y
Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
新器件
LETTER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
Temperature-dependent wakeup behavior in back-end-of-line compatible ultra-thin HfxZr1−xO2 ferroelectric film
Li, Xiaopeng; Tai, Lu; Dou, Xiaoyu; Feng, Yang; Zhang, Dong; Zhan, Xuepeng; Wu, Jixuan; Gong, Xiao; Chen, Jiezhi
Sci China Inf Sci, 2025, 68(6): 160408
Keywords: ferroelectric; HZO; wakeup behavior; BEOL compatibility; ultra-thin film
Cite as: Li X P, Tai L, Dou X Y, et al. Temperature-dependent wakeup behavior in back-end-of-line compatible ultra-thin HfxZr1−xO2 ferroelectric film. Sci China Inf Sci, 2025, 68: 160408, doi: 10.1007/s11432-024-4407-x
Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
新器件
RESEARCH PAPER
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
Co-optimization of ferroelectric gate stacks on operation voltage and memory window for next-generation NAND flash
Chen, Bo; Liu, Yizhi; Wu, Yifan; Sang, Pengpeng; Wu, Jixuan; Zhan, Xuepeng; Chen, Jiezhi
Sci China Inf Sci, 2025, 68(6): 160404
Keywords: TiO2; gate stack; HZO; memory window
Cite as: Chen B, Liu Y Z, Wu Y F, et al. Co-optimization of ferroelectric gate stacks on operation voltage and memory window for next-generation NAND flash. Sci China Inf Sci, 2025, 68: 160404, doi: 10.1007/s11432-024-4406-y
新器件
LETTER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
High linearity GaN HEMT by optimized three-dimensional-gated modulation via top-MIS-gate nanowire channel structure
Gong, Can; Mi, Minhan; Zhou, Yuwei; Wang, Pengfei; Li, Hanzhen; Wen, Xinyi; Meng, Ting; An, Sirui; Du, Xiang; Cheng, Kai; Zhang, Meng; Zhu, Qing; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2025, 68(4): 149401
Keywords: GaN HEMT; top-MIS-gate nanowire channel; stress-engineered in-situ SiN; linearity enhancement; gate-voltage-swing
Cite as: Gong C, Mi M H, Zhou Y W, et al. High linearity GaN HEMT by optimized three-dimensional-gated modulation via top-MIS-gate nanowire channel structure. Sci China Inf Sci, 2025, 68: 149401, doi: 10.1007/s11432-024-4302-0
新器件
LETTER
Supplementary
Webpage
Webpage-cn
SpringerLink
Google Scholar
Cited in SCI: 0
Electro-optic tuning in ferroelectric capacitor with photonic crystal nanobeam cavity
Wang, Tongtong; Zhang, Yong; Yao, Danyang; Jiang, Zhi; Tan, Dongxin; Wen, Jie; Yang, Qiyu; Gan, Xuetao; Liu, Yan; Hao, Yue; Han, Genquan
Sci China Inf Sci, 2025, 68(2): 129403
Keywords: Silicon photonics; electro-optic tuning; photonic crystal nanobeam cavities; ferroelectric capacitor; energy efficient
Cite as: Wang T T, Zhang Y, Yao D Y, et al. Electro-optic tuning in ferroelectric capacitor with photonic crystal nanobeam cavity. Sci China Inf Sci, 2025, 68: 129403, doi: 10.1007/s11432-024-4249-2
