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Boosted high-temperature electrical characteristics of AlGaN/GaN HEMTs with rationally designed compositionally graded AlGaN back barriers
Zhang, Haochen; Sun, Yue; Hu, Kunpeng; Yang, Lei; Liang, Kun; Xing, Zhanyong; Wang, Hu; Zhang, Mingshuo; Yu, Huabin; Fang, Shi; Kang, Yang; Sun, Haiding
Sci China Inf Sci, 2023, 66(8): 182405
Keywords: AlGaN/GaN HEMT; graded AlGaN back barrier; SiNx passivation; DHHEMT; high temperature stability
Cite as: Zhang H C, Sun Y, Hu K P, et al. Boosted high-temperature electrical characteristics of AlGaN/GaN HEMTs with rationally designed compositionally graded AlGaN back barriers. Sci China Inf Sci, 2023, 66(8): 182405, doi: 10.1007/s11432-022-3694-4
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An ultra-high-density and energy-efficient content addressable memory design based on 3D-NAND flash
Yang, Haozhang; Huang, Peng; Han, Runze; Liu, Xiaoyan; Kang, Jinfeng
Sci China Inf Sci, 2023, 66(4): 142402
Keywords: content addressable memory; CAM; 3D-NAND flash; data-intensive computing; in-memory computing; multilevel CAM
Cite as: Yang H Z, Huang P, Han R Z, et al. An ultra-high-density and energy-efficient content addressable memory design based on 3D-NAND flash. Sci China Inf Sci, 2023, 66(4): 142402, doi: 10.1007/s11432-021-3502-4
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Perpendicular magnetic anisotropy based spintronics devices in Pt/Co stacks under different hard and flexible substrates
Eimer, Sylvain; Cheng, Houyi; Li, Jinji; Zhang, Xueying; Zhao, Chao; Zhao, Weisheng
Sci China Inf Sci, 2023, 66(2): 122408
Keywords: Pt/Co stacks; perpendicular magnetic anisotropy; magnetodynamic behavior; spintronics flexible devices; high temperature deposition
Cite as: Eimer S, Cheng H Y, Li J J, et al. Perpendicular magnetic anisotropy based spintronics devices in Pt/Co stacks under different hard and flexible substrates. Sci China Inf Sci, 2023, 66(2): 122408, doi: 10.1007/s11432-021-3371-4
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NAND-SPIN-based processing-in-MRAM architecture for convolutional neural network acceleration
Zhao, Yinglin; Yang, Jianlei; Li, Bing; Cheng, Xingzhou; Ye, Xucheng; Wang, Xueyan; Jia, Xiaotao; Wang, Zhaohao; Zhang, Youguang; Zhao, Weisheng
Sci China Inf Sci, 2023, 66(4): 142401
Keywords: processing-in-memory; convolutional neural network; NAND-like spintronics memory; non- volatile memory; magnetic tunnel junction
Cite as: Zhao Y L, Yang J L, Li B, et al. NAND-SPIN-based processing-in-MRAM architecture for convolutional neural network acceleration. Sci China Inf Sci, 2023, 66(4): 142401, doi: 10.1007/s11432-021-3472-9
Special Topic: Recent Progress of Fundamental Research on Post-Moore Novel Devices
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Keywords: resistive random-access memory; computation-in-memory; compact model; device-architecture-algorithm co-design; compiler
Cite as: Liu Y Y, Gao B, Tang J S, et al. Architecture-circuit-technology co-optimization for resistive random access memory-based computation-in-memory chips. Sci China Inf Sci, 2023, 66(10): 200408, doi: 10.1007/s11432-023-3785-8
Special Topic: Recent Progress of Fundamental Research on Post-Moore Novel Devices
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Memristive dynamics enabled neuromorphic computing systems
Yan, Bonan; Yang, Yuchao; Huang, Ru
Sci China Inf Sci, 2023, 66(10): 200401
Keywords: memrsitor; memristive dynamics; artificial synapse; artificial neuron; neuromorphic computing
Cite as: Yan B N, Yang Y C, Huang R. Memristive dynamics enabled neuromorphic computing systems. Sci China Inf Sci, 2023, 66(10): 200401, doi: 10.1007/s11432-023-3739-0
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All-van der Waals stacking ferroelectric field-effect transistor based on In2Se3 for high-density memory
Wang, Xiaojie; Feng, Zeyang; Cai, Jingwei; Tong, Hao; Miao, Xiangshui
Sci China Inf Sci, 2023, 66(8): 182401
Keywords: high-density memory; ferroelectric field-effect transistors; two-dimensional ferroelectrics; van der Waals; In2Se3
Cite as: Wang X J, Feng Z Y, Cai J W, et al. All-van der Waals stacking ferroelectric field-effect transistor based on In2Se3 for high-density memory. Sci China Inf Sci, 2023, 66(8): 182401, doi: 10.1007/s11432-022-3617-2
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Associative learning of a three-terminal memristor network for digits recognition
Ren, Yiming; Tian, Bobo; Yan, Mengge; Feng, Guangdi; Gao, Bin; Yue, Fangyu; Peng, Hui; Tang, Xiaodong; Zhu, Qiuxiang; Chu, Junhao; Duan, Chungang
Sci China Inf Sci, 2023, 66(2): 122403
Keywords: artificial intelligence; associative learning; memristor; classification network
Cite as: Ren Y M, Tian B B, Yan M G, et al. Associative learning of a three-terminal memristor network for digits recognition. Sci China Inf Sci, 2023, 66(2): 122403, doi: 10.1007/s11432-022-3503-4
Special Topic: Recent Progress of Fundamental Research on Post-Moore Novel Devices
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Keywords: catalytic growth; silicon nanowires; electronics; monolithic 3D-integration
Cite as: Liang L, Hu R J, Yu L W. Toward monolithic growth integration of nanowire electronics in 3D architecture: a review. Sci China Inf Sci, 2023, 66(10): 200406, doi: 10.1007/s11432-023-3774-y
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CMOS-compatible retinomorphic Si photodetector for motion detection
Wu, Yi; Deng, Wenjie; Chen, Xiaoqing; Li, Jingjie; Li, Songyu; Zhang, Yongzhe
Sci China Inf Sci, 2023, 66(6): 162401
Keywords: retina; photodetector; motion detection; bio-inspired; in-sensor computing
Cite as: Wu Y, Deng W J, Chen X Q, et al. CMOS-compatible retinomorphic Si photodetector for motion detection. Sci China Inf Sci, 2023, 66(6): 162401, doi: 10.1007/s11432-022-3591-5
Special Topic: Two-Dimensional Materials and Device Applications
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Keywords: negative quantum capacitance; molybdenum disulfide; field-effect transistor; subthreshold swing; ultra-low power device
Cite as: Chen L, Wang H M, Huang Q Q, et al. A novel negative quantum capacitance field-effect transistor with molybdenum disulfide integrated gate stack and steep subthreshold swing for ultra-low power applications. Sci China Inf Sci, 2023, 66(6): 160406, doi: 10.1007/s11432-023-3763-3
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Freely switching between ferroelectric and resistive switching in Hf 0.5Zr0.5O2 films and its application on high accuracy on-chip deep neural networks
Jiang, Pengfei; Xu, Kunran; Yu, Jie; Xu, Yannan; Yuan, Peng; Wang, Yuan; Chen, Yuting; Ding, Yaxin; Lv, Shuxian; Dang, Zhiwei; Gong, Tiancheng; Yang, Yang; Wang, Yan; Luo, Qing
Sci China Inf Sci, 2023, 66(2): 122409
Keywords: Hf0.5Zr0.5O2 films; ferroelectric; resistive switching; accuracy; on-chip DNN
Cite as: Jiang P F, Xu K R, Yu J, et al. Freely switching between ferroelectric and resistive switching in Hf 0.5Zr0.5O2 films and its application on high accuracy on-chip deep neural networks. Sci China Inf Sci, 2023, 66(2): 122409, doi: 10.1007/s11432-022-3508-7
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Conversion of a single-layer ANN to photonic SNN for pattern recognition
Han, Yanan; Xiang, Shuiying; Zhang, Tianrui; Zhang, Yahui; Guo, Xingxing; Shi, Yuechun
Sci China Inf Sci, 2024, 67(1): 112403
Keywords: photonic SNN; conversion; optical computing; pattern recognition; artificial neural network
Cite as: Han Y N, Xiang S Y, Zhang T R, et al. Conversion of a single-layer ANN to photonic SNN for pattern recognition. Sci China Inf Sci, 2024, 67(1): 112403, doi: 10.1007/s11432-022-3699-2
Special Topic: Recent Progress of Fundamental Research on Post-Moore Novel Devices
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Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications
Zhang, Zhaohao; Tian, Guoliang; Huo, Jiali; Zhang, Fang; Zhang, Qingzhu; Xu, Gaobo; Wu, Zhenhua; Cheng, Yan; Liu, Yan; Yin, Huaxiang
Sci China Inf Sci, 2023, 66(10): 200405
Keywords: ferroelectric; FeFET; hafnium oxide; HZO; logic-in-memory; neuromorphic computing
Cite as: Zhang Z H, Tian G L, Huo J L, et al. Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications. Sci China Inf Sci, 2023, 66(10): 200405, doi: 10.1007/s11432-023-3780-7
Special Topic: Recent Progress of Fundamental Research on Post-Moore Novel Devices
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In-memory computing based on phase change memory for high energy efficiency
He, Luchang; Li, Xi; Xie, Chenchen; Song, Zhitang
Sci China Inf Sci, 2023, 66(10): 200402
Keywords: in-memory computing; phase change memory; energy efficiency; neural network; memory wall
Cite as: He L C, Li X, Xie C C, et al. In-memory computing based on phase change memory for high energy efficiency. Sci China Inf Sci, 2023, 66(10): 200402, doi: 10.1007/s11432-023-3789-7
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Experimental investigation of a novel junction-modulated hetero-layer tunnel FET with the striped gate for low power applications
Liang, Zhongxin; Zhao, Yang; Wang, Kaifeng; Zhang, Jieyin; Zhang, Jianjun; Li, Ming; Huang, Ru; Huang, Qianqian
Sci China Inf Sci, 2023, 66(6): 169406
Keywords: subthreshold swing; steep-slope; tunnel field-effect transistor; band-to-band tunneling; junction depleted-modulation; adaptive bandgap engineering
Cite as: Liang Z X, Zhao Y, Wang K F, et al. Experimental investigation of a novel junction-modulated hetero-layer tunnel FET with the striped gate for low power applications. Sci China Inf Sci, 2023, 66(6): 169406, doi: 10.1007/s11432-022-3500-6
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Multi-grained system integration for hybrid-paradigm brain-inspired computing
Pei, Jing; Deng, Lei; Ma, Cheng; Liu, Xue; Shi, Luping
Sci China Inf Sci, 2023, 66(4): 142403
Keywords: brain-inspired computing; multi-grained system integration; hybrid paradigm; Tianjic chip; brain-inspired platform
Cite as: Pei J, Deng L, Ma C, et al. Multi-grained system integration for hybrid-paradigm brain-inspired computing. Sci China Inf Sci, 2023, 66(4): 142403, doi: 10.1007/s11432-021-3510-6
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A strong physical unclonable function with machine learning immunity for Internet of Things application
Ren, Pengpeng; Xue, Yongkang; Jing, Linglin; Zhang, Lining; Wang, Runsheng; Ji, Zhigang
Sci China Inf Sci, 2024, 67(1): 112404
Keywords: physical unclonable function; PUF; electron traps; authentication; encryption; cryptography; security
Cite as: Ren P P, Xue Y K, Jing L L, et al. A strong physical unclonable function with machine learning immunity for Internet of Things application. Sci China Inf Sci, 2024, 67(1): 112404, doi: 10.1007/s11432-022-3722-8
Special Topic: Recent Progress of Fundamental Research on Post-Moore Novel Devices
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Research progress on low-power artificial intelligence of things (AIoT) chip design
Ye, Le; Wang, Zhixuan; Jia, Tianyu; Ma, Yufei; Shen, Linxiao; Zhang, Yihan; Li, Heyi; Chen, Peiyu; Wu, Meng; Liu, Ying; Jing, Yiqi; Zhang, Hao; Huang, Ru
Sci China Inf Sci, 2023, 66(10): 200407
Keywords: artificial intelligence; Internet of Things; low-power; chip design; random sparse event
Cite as: Ye L, Wang Z X, Jia T Y, et al. Research progress on low-power artificial intelligence of things (AIoT) chip design. Sci China Inf Sci, 2023, 66(10): 200407, doi: 10.1007/s11432-023-3813-8
Special Topic: Recent Progress of Fundamental Research on Post-Moore Novel Devices
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Recent progress in InGaZnO FETs for high-density 2T0C DRAM applications
Yan, Shengzhe; Cong, Zhaori; Lu, Nianduan; Yue, Jinshan; Luo, Qing
Sci China Inf Sci, 2023, 66(10): 200404
Keywords: IGZO FET; 2T0C DRAM; high density; compact modeling; computing-in-memory; monolithic 3D integration
Cite as: Yan S Z, Cong Z R, Lu N D, et al. Recent progress in InGaZnO FETs for high-density 2T0C DRAM applications. Sci China Inf Sci, 2023, 66(10): 200404, doi: 10.1007/s11432-023-3802-8
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Hf0.5Zr0.5O2 1T–1C FeRAM arrays with excellent endurance performance for embedded memory
Xiao, Wenwu; Peng, Yue; Liu, Yan; Duan, Huifu; Bai, Fujun; Yu, Bing; Ren, Qiwei; Yu, Xiao; Han, Genquan
Sci China Inf Sci, 2023, 66(4): 149401
Keywords: FeRAM; Hf0.5Zr0.5O2; Arrays; Endurance; Ferroelectric
Cite as: Xiao W W, Peng Y, Liu Y, et al. Hf0.5Zr0.5O2 1T–1C FeRAM arrays with excellent endurance performance for embedded memory. Sci China Inf Sci, 2023, 66(4): 149401, doi: 10.1007/s11432-022-3469-5
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1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate
Zhao, Shenglei; Zhang, Jincheng; Zhang, Yachao; Feng, Lansheng; Liu, Shuang; Song, Xiufeng; Yao, Yixin; Luo, Jun; Liu, Zhihong; Xu, Shengrui; Hao, Yue
Sci China Inf Sci, 2023, 66(2): 122407
Keywords: p-GaN gate; HEMTs; high voltage; SiC substrate
Cite as: Zhao S L, Zhang J C, Zhang Y C, et al. 1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate. Sci China Inf Sci, 2023, 66(2): 122407, doi: 10.1007/s11432-022-3475-9
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Current collapse suppressed GaN diodes with 38 Watts high RF power rectifier capability
Dang, Kui; Qiu, Zhilin; Huo, Shudong; Zhan, Peng; Liu, Huining; Zhang, Yachao; Ning, Jing; Zhou, Hong; Zhang, Jincheng
Sci China Inf Sci, 2024, 67(2): 129401
Keywords: GaN; Schottky barrier diode; SBD; high power; microwave rectifier; microwave power transmission; MPT
Cite as: Dang K, Qiu Z L, Huo S D, et al. Current collapse suppressed GaN diodes with 38 Watts high RF power rectifier capability. Sci China Inf Sci, 2024, 67(2): 129401, doi: 10.1007/s11432-023-3795-8
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Spin-orbit torque efficiency enhancement to tungsten-based SOT-MTJs by interface modification with an ultrathin MgO
Lu, Shiyang; Ning, Xiaobai; Zhang, Hongchao; Zhen, Sixi; Fan, Xiaofei; Xiong, Danrong; Zhu, Dapeng; Wang, Gefei; Liu, Hong-Xi; Cao, Kaihua; Zhao, Weisheng
Sci China Inf Sci, 2024, 67(1): 119403
Keywords: spin-orbital torque; MRAM; tungsten; interface modification; damping-like torque efficiency
Cite as: Lu S Y, Ning X B, Zhang H C, et al. Spin-orbit torque efficiency enhancement to tungsten-based SOT-MTJs by interface modification with an ultrathin MgO. Sci China Inf Sci, 2024, 67(1): 119403, doi: 10.1007/s11432-023-3809-3
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Litho-AsymVnet: super-resolution lithography modeling with an asymmetric V-net architecture
Zhang, Qing; Zhang, Yuhang; Lu, Wei; Huang, Huajie; Zhong, Zheng; Zhou, Congshu; Li, Yongfu
Sci China Inf Sci, 2023, 66(12): 229406
Keywords: lithography simulation; super-resolution; autoencoder neural network; asymmetric architecture; physical verification
Cite as: Zhang Q, Zhang Y H, Lu W, et al. Litho-AsymVnet: super-resolution lithography modeling with an asymmetric V-net architecture. Sci China Inf Sci, 2023, 66(12): 229406, doi: 10.1007/s11432-022-3755-y
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High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation
Fan, Yutong; Liu, Xi; Huang, Ren; Wen, Yu; Zhang, Weihang; Zhang, Jincheng; Liu, Zhihong; Zhao, Shenglei
Sci China Inf Sci, 2023, 66(12): 229404
Keywords: GaN HEMT; Ohmic/Schokkty hybrid drain; double-heterostructure; threshold voltage stability; breakdown voltage; power dissipation
Cite as: Fan Y T, Liu X, Huang R, et al.
. High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation. Sci China Inf Sci, 2023, 66(12): 229404, doi: 10.1007/s11432-022-3707-2
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Near-threshold-voltage operation in flash-based high-precision computing-in-memory to implement Poisson image editing
Feng, Yang; Chen, Bing; Tang, Mingfeng; Qi, Yuerang; Bai, Maoying; Wang, Chengcheng; Wang, Hai; Zhan, Xuepeng; Zhang, Junyu; Liu, Jing; Wu, Jixuan; Chen, Jiezhi
Sci China Inf Sci, 2023, 66(12): 222402
Keywords: NOR flash memory; computing-in-memory; variation; Poisson image editing
Cite as: Feng Y, Chen B, Tang M F, et al. Near-threshold-voltage operation in flash-based high-precision computing-in-memory to implement Poisson image editing. Sci China Inf Sci, 2023, 66(12): 222402, doi: 10.1007/s11432-022-3743-x
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Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology
Shi, Hangning; Yi, Ailun; Ding, Jiaxin; Liu, Xudong; Qin, Qingcheng; Yi, Juemin; Hu, Junjie; Wang, Miao; Cai, Demin; Wang, Jianfeng; Xu, Ke; Mu, Fengwen; Suga, Tadatomo; Heller, Rene; Wang, Mao; Zhou, Shengqiang; Xu, Wenhui; Huang, Kai; You, Tiangui; Ou, Xin
Sci China Inf Sci, 2023, 66(11): 219403
Keywords: heterogeneous integration; GaN on Si(100); GaNOI; ion-cutting technology; defect evolution
Cite as: Shi H N, Yi A L, Ding J X, et al. Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology. Sci China Inf Sci, 2023, 66(11): 219403, doi: 10.1007/s11432-022-3668-0
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Keywords: nanosheet transistor; TCAD simulation; quantum confinement variation; process variation; statistical variability; interplay
Cite as: Luo H W, Li R H, Miao X S, et al. A comprehensive study of device variability of sub-5 nm nanosheet transistors and interplay with quantum confinement variation. Sci China Inf Sci, 2023, 66(2): 129402, doi: 10.1007/s11432-021-3399-3
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Keywords: matrix equation solving; memristor; linear neural network; matrix-multiplication; analog com- puting
Cite as: Li J C, Zhou H J, Li Y, et al. A memristive neural network based matrix equation solver with high versatility and high energy efficiency. Sci China Inf Sci, 2023, 66(2): 122402, doi: 10.1007/s11432-021-3374-x
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Effects of the VGS sweep range on the short channel effect in negative capacitance FinFETs
Zhang, Fan; Zhang, Zhaohao; Yao, Jiaxin; Zhang, Qingzhu; Xu, Gaobo; Wu, Zhenhua; Liu, Huan; Han, Genquan; Liu, Yan; Yin, Huaxiang
Sci China Inf Sci, 2024, 67(6): 169404
Keywords: DIBL; negative capacitance; FinFET; HZO; short channel effect
Cite as: Zhang F, Zhang Z H, Yao J X, et al. Effects of the VGS sweep range on the short channel effect in negative capacitance FinFETs. Sci China Inf Sci, 2024, 67(6): 169404, doi: 10.1007/s11432-023-4006-7
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High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz
Du, Hanghai; Hao, Lu; Liu, Zhihong; Song, Zeyu; Zhang, Yachao; Dang, Kui; Zhou, Jin; Ning, Jing; Li, Zan; Zhang, Jincheng; Hao, Yue
Sci China Inf Sci, 2024, 67(6): 169402
Keywords: compound semiconductor devices; millimeter wave RF devices; ohmic contacts; Gallium Nitride; AlGaN; GaN
Cite as: Du H H, Hao L, Liu Z H, et al. High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz. Sci China Inf Sci, 2024, 67(6): 169402, doi: 10.1007/s11432-024-3998-2
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Performance improvement of β-Ga2O3 SBD-based rectifier with embedded microchannels in ceramic substrate
Hong, Wen; Zhang, Chao; Zhang, Fang; Zheng, Xuefeng; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2024, 67(5): 159404
Keywords: β-Ga2O3; Rectifier; Embedded; Cooling; output power
Cite as: Hong W, Zhang C, Zhang F, et al. Performance improvement of β-Ga2O3 SBD-based rectifier with embedded microchannels in ceramic substrate. Sci China Inf Sci, 2024, 67(5): 159404, doi: 10.1007/s11432-024-3992-8
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An isolated symmetrical 2T2R cell enabling high precision and high density for RRAM-based in-memory computing
Ling, Yaotian; Wang, Zongwei; Yang, Yuhang; Bao, Lin; Bao, Shengyu; Wang, Qishen; Cai, Yimao; Huang, Ru
Sci China Inf Sci, 2024, 67(5): 152402
Keywords: RRAM; 2T2R; multi-level storage; weight asymmetry; in-memory computing
Cite as: Ling Y T, Wang Z W, Yang Y H, et al. An isolated symmetrical 2T2R cell enabling high precision and high density for RRAM-based in-memory computing. Sci China Inf Sci, 2024, 67(5): 152402, doi: 10.1007/s11432-023-3887-0
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Mobile-ionic FETs with ultra-scaled amorphous dielectric achieving ferroelectric behaviors and sub-kT/q swing with temperature down to 77 K
Liu, Huan; Yang, Qiyu; Jin, Chengji; Chen, Jiajia; Chou, Lulu; Yu, Xiao; Liu, Yan; Han, Genquan
Sci China Inf Sci, 2024, 67(1): 119401
Keywords: Ferroelectric-like; steep subthreshold swing; transistor; mobile ionic; amorphous dielectric
Cite as: Liu H, Yang Q Y, Jin C J, et al. Mobile-ionic FETs with ultra-scaled amorphous dielectric achieving ferroelectric behaviors and sub-kT/q swing with temperature down to 77 K. Sci China Inf Sci, 2024, 67(1): 119401, doi: 10.1007/s11432-022-3721-0
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Realtime observation of "spring fracture" like AlGaN/GaN HEMT failure under bias
Zhu, Qing; Wang, Zhenni; Wei, Yuxiang; Yang, Ling; Lu, Xiaoli; Zhu, Jiejie; Zhong, Peng; Lei, Yimin; Ma, Xiaohua
Sci China Inf Sci, 2024, 67(1): 114401
Keywords: in-situ TEM; AlGaN/GaN; bending coutours; Joule heat; reliability
Cite as: Zhu Q, Wang Z N, Wei Y X, et al. Realtime observation of "spring fracture" like AlGaN/GaN HEMT failure under bias. Sci China Inf Sci, 2024, 67(1): 114401, doi: 10.1007/s11432-023-3867-4
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CLEAR: a full-stack chip-in-loop emulator for analog RRAM based computing-in-memory system
Yu, Ruihua; Zhang, Wenqiang; Gao, Bin; Geng, Yiwen; Yao, Peng; Liu, Yuyi; Zhang, Qingtian; Tang, Jianshi; Wu, Dong; He, Hu; Deng, Ning; Qian, He; Wu, Huaqiang
Sci China Inf Sci, 2023, 66(12): 229402
Keywords: computing-in-memory; RRAM; emulator; chip-in-loop; full-stack
Cite as: Yu R H, Zhang W Q, Gao B, et al. CLEAR: a full-stack chip-in-loop emulator for analog RRAM based computing-in-memory system. Sci China Inf Sci, 2023, 66(12): 229402, doi: 10.1007/s11432-022-3756-3
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Design memristor-based computing-in-memory for AI accelerators considering the interplay between devices, circuits, and system
An, Junjie; Wang, Linfang; Ye, Wang; Li, Weizeng; Gao, Hanghang; Li, Zhi; Zhou, Zhidao; Tian, Jinghui; Gao, Jianfeng; Dou, Chunmeng; Liu, Qi
Sci China Inf Sci, 2023, 66(8): 182404
Keywords: memristor; resistive memory; computing-in-memory; artificial intelligence; cross-layer co-design
Cite as: An J J, Wang L F, Ye W, et al. Design memristor-based computing-in-memory for AI accelerators considering the interplay between devices, circuits, and system. Sci China Inf Sci, 2023, 66(8): 182404, doi: 10.1007/s11432-022-3627-8
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Implementation of 16 Boolean logic operations based on one basic cell of spin-transfer-torque magnetic random access memory
Huang, Yan; Cao, Kaihua; Zhang, Kun; Wang, Jinkai; Shi, Kewen; Hao, Zuolei; Cai, Wenlong; Du, Ao; Yin, Jialiang; Yang, Qing; Li, Junfeng; Gao, Jianfeng; Zhao, Chao; Zhao, Weisheng
Sci China Inf Sci, 2023, 66(6): 162402
Keywords: in-memory computing; logic operation; magnetic tunnel junctions; transistor; spin transfer torque
Cite as: Huang Y, Cao K H, Zhang K, et al. Implementation of 16 Boolean logic operations based on one basic cell of spin-transfer-torque magnetic random access memory. Sci China Inf Sci, 2023, 66(6): 162402, doi: 10.1007/s11432-021-3562-8
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A Hf0.5Zr0.5O2 ferroelectric capacitor-based half-destructive read scheme for computing-in-memory
Zhao, Yulin; Wang, Yuan; Zhang, Donglin; Han, Zhongze; Hu, Qiao; Liu, Xuanzhi; Ding, Qingting; Cheng, Jinhui; Zhang, Wenjun; Cao, Yue; Zhou, Ruixi; Luo, Qing; Yang, Jianguo; Lv, Hangbing
Sci China Inf Sci, 2023, 66(5): 159402
Keywords: compute-in-memory; ferroelectric capacitors; destructive read operation; copy operation; write-back operation; half-destructive read scheme
Cite as: Zhao Y L, Wang Y, Zhang D L, et al. A Hf0.5Zr0.5O2 ferroelectric capacitor-based half-destructive read scheme for computing-in-memory. Sci China Inf Sci, 2023, 66(5): 159402, doi: 10.1007/s11432-021-3490-3
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An AND-type 1T-FeFET array with robust write and read operations
Xu J C, Zhao J Y, Zhang H R, et al
Sci China Inf Sci, 2025, 68(2): 129404
Keywords: HfO2-based Ferroelectric; FeFET; AND-type array; non-volatile memory; transistor
Cite as: Xu J C, Zhao J Y, Zhang H R, et al. An AND-type 1T-FeFET array with robust write and read operations. Sci China Inf Sci, 2025, 68(2): 129404, doi: 10.1007/s11432-024-4245-7
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Keywords: Silicon photonics; electro-optic tuning; photonic crystal nanobeam cavities; ferroelectric capacitor; energy efficient
Cite as: Wang T T, Zhang Y, Yao D Y, et al. Electro-optic tuning in ferroelectric capacitor with photonic crystal nanobeam cavity. Sci China Inf Sci, 2025, 68(2): 129403, doi: 10.1007/s11432-024-4249-2
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Keywords: Ga2O3; Schottky diodes; high current; high breakdown voltage; edge termination; low resistance; industrial-level; power
Cite as: Feng Y T, Zhou H, Alghamdi S, et al. 1.56 kV/30 A vertical β-Ga2O3 Schottky barrier diodes with composite edge terminations. Sci China Inf Sci, 2025, 68(2): 129401, doi: 10.1007/s11432-024-4204-9
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Logic-in-memory cell enabling binary and ternary Boolean logics
Oh J, Jeon J, Shin Y, et al
Sci China Inf Sci, 2025, 68(2): 122407
Keywords: logic-in-memory; reconfigurable channel modes; ternary logic; triple-gated feedback field-effect transistors
Cite as: Oh J, Jeon J, Shin Y, et al. Logic-in-memory cell enabling binary and ternary Boolean logics. Sci China Inf Sci, 2025, 68(2): 122407, doi: 10.1007/s11432-024-4248-4
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Keywords: memristor crossbar; IR-drop; neural network; activation function; hardware-software co-design
Cite as: Jiang P F, Song D Z, Huang M H, et al. Optimizing hardware-software co-design based on non-ideality in memristor crossbars for in-memory computing. Sci China Inf Sci, 2025, 68(2): 122406, doi: 10.1007/s11432-024-4240-x
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Keywords: compute-in-memory; CIM; monolithic 3D; RRAM; IGZO; 3D-stack; simulation
Cite as: Yan S Z, Cong Z R, Wang Z, et al. A monolithic 3D IGZO-RRAM-SRAM-integrated architecture for robust and efficient compute-in-memory enabling equivalent-ideal device metrics. Sci China Inf Sci, 2025, 68(2): 122404, doi: 10.1007/s11432-024-4078-1
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Keywords: analog computing; in-memory computing; matrix; resistive memory; conductance compensation
Cite as: Luo Y B, Zuo P S, Wang S Q, et al. Smaller, faster, lower-power analog RRAM matrix computing circuits without performance compromise. Sci China Inf Sci, 2025, 68(2): 122402, doi: 10.1007/s11432-023-3990-4
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Bulk photovoltaic effect in two-dimensional ferroelectric α-In2Se3
Wang, Huiting; Wu, Shuaiqin; Chen, Yan; Zhao, Qianru; Zeng, Jinhua; Yin, Ruotong; Zheng, Yuqing; Liu, Chang; Zhang, Shukui; Lin, Tie; Shen, Hong; Meng, Xiangjian; Ge, Jun; Wang, Xudong; Chu, Junhao; Wang, Jianlu
Sci China Inf Sci, 2025, 68(2): 122401
Keywords: bulk photovoltaic effect; 2D ferroelectrics; 3R α-In2Se3; shift current; self-powered photodetection
Cite as: Wang H T, Wu S Q, Chen Y, et al. Bulk photovoltaic effect in two-dimensional ferroelectric α-In2Se3. Sci China Inf Sci, 2025, 68(2): 122401, doi: 10.1007/s11432-023-4070-8
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Substrate bias effects in p-channel GaN-on-Si transistors
Zhao, Mengyao; Ma, Jie; Yang, Lanlan; Pan, Chuanqi; Wang, Denggui; Zhou, Jianjun; Li, Sheng; Wei, Jiaxing; Zhang, Long; Liu, Siyang; Sun, Weifeng
Sci China Inf Sci, 2025, 68(1): 119405
Keywords: buffer traps; GaN-on-Si transistor; p-channel; space charge; substrate bias effects; vertical electric field; back gate
Cite as: Zhao M Y, Ma J, Yang L L, et al. Substrate bias effects in p-channel GaN-on-Si transistors. Sci China Inf Sci, 2025, 68(1): 119405, doi: 10.1007/s11432-024-4213-4
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Dynamic performance enhancement in Ti/Au ohmic contacts on β-Ga2O3- on-SiC substrates: evidence from pulsed measurements
Liu, Chenyu; Wang, Yibo; Xu, Wenhui; Huang, Shuqi; Yu, Chunxiao; Yang, Zeyu; Jia, Xiaole; Li, Xiaoxi; Li, Bochang; Luo, Zhengdong; Fang, Cizhe; Liu, Yan; You, Tiangui; Ou, Xin; Han, Genquan
Sci China Inf Sci, 2025, 68(1): 119403
Keywords: Ga2O3; Titanium/Gold ohmic contact; heterogeneous; pulsed measurement; Gallium Oxide
Cite as: Liu C Y, Wang Y B, Xu W H, et al. Dynamic performance enhancement in Ti/Au ohmic contacts on β-Ga2O3- on-SiC substrates: evidence from pulsed measurements. Sci China Inf Sci, 2025, 68(1): 119403, doi: 10.1007/s11432-024-4195-4
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Orbitronics for energy-efficient magnetization switching
Yao, Yuxuan; Zhu, Daoqian; Xia, Qingtao; Liang, Jianing; Jiang, Yuhao; Peng, Zhiyang; Li, Jiaxu; Xiao, Chen; Xu, Renyou; Wang, Wenwen; Shang, Xiantao; Lu, Shiyang; Zhu, Dapeng; Liu, Hong-Xi; Cao, Kaihua; Zhao, Weisheng
Sci China Inf Sci, 2025, 68(1): 119402
Keywords: orbitronics; orbital hall effect; spin-orbit torque; current-induced magnetization switching; 400℃ annealing
Cite as: Yao Y X, Zhu D Q, Xia Q T, et al. Orbitronics for energy-efficient magnetization switching. Sci China Inf Sci, 2025, 68(1): 119402, doi: 10.1007/s11432-024-4186-6
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Physics based circuit compatible model for hybrid antiferroelectric random access memory
Wu, Qiuxia; Peng, Yue; Xiao, Wenwu; Ma, Wenxuan; Zhang, Shuo; Sun, Litao; Zhang, Chunfu; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2025, 68(1): 119401
Keywords: antiferroelectric; AFRAM; EDA; compute-in-memory; non-volatile
Cite as: Wu Q X, Peng Y, Xiao W W, et al. Physics based circuit compatible model for hybrid antiferroelectric random access memory. Sci China Inf Sci, 2025, 68(1): 119401, doi: 10.1007/s11432-024-4190-4
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Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field- effect diode based on AlGaN/GaN HEMT
Wang, Fangzhou; Gao, Changhong; Ding, Guojian; Yu, Cheng; Wang, Zhuocheng; Wang, Xiaohui; Feng, Qi; Yu, Ping; Zuo, Peng; Chen, Wanjun; Wang, Yang; Jia, Haiqiang; Chen, Hong; Zhang, Bo; Wang, Zeheng
Sci China Inf Sci, 2025, 68(1): 112403
Keywords: Schottky-MIS cascode anode; lateral field-effect diode; LFED; ultralow reverse leakage current; ILEAK; forward drop and reverse leakage trade-off; AlGaN/GaN HEMTs
Cite as: Wang F Z, Gao C H, Ding G J, et al. Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field- effect diode based on AlGaN/GaN HEMT. Sci China Inf Sci, 2025, 68(1): 112403, doi: 10.1007/s11432-024-4197-y
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MoS2 synaptic transistor with one-step manufacture
Guo, Yihao; Wang, Yang; Deng, Wenjie; Wu, Yi; Li, Jingtao; Li, Kexin; Zhao, Yuehui; Yu, Songlin; Wang, Xiaoting; Zhang, Yongzhe; Yan, Hui
Sci China Inf Sci, 2025, 68(1): 112401
Keywords: process optimization; artificial synaptic device; one-step manufacture; synaptic plasticity; bionic simulation
Cite as: Guo Y H, Wang Y, Deng W J, et al. MoS2 synaptic transistor with one-step manufacture. Sci China Inf Sci, 2025, 68(1): 112401, doi: 10.1007/s11432-024-4093-1
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High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation
Chang, Qingyuan; Hou, Bin; Yang, Ling; Wu, Mei; Zhang, Meng; Lu, Hao; Jia, Fuchun; Niu, Xuerui; Shi, Chunzhou; Du, Jiale; Jia, Mao; Yu, Qian; Li, Shiming; Zhu, Youjun; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2024, 67(12): 229402
Keywords: GaN-on-Si; SBD; quasi-vertical; NET terminal; multi-level N ion implantation
Cite as: Chang Q Y, Hou B, Yang L, et al. High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation. Sci China Inf Sci, 2024, 67(12): 229402, doi: 10.1007/s11432-024-4164-1
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A 3D MCAM architecture based on flash memory enabling binary neural network computing for edge AI
Bai, Maoying; Wu, Shuhao; Wang, Hai; Wang, Hua; Feng, Yang; Qi, Yueran; Wang, Chengcheng; Chai, Zheng; Min, Tai; Wu, Jixuan; Zhan, Xuepeng; Chen, Jiezhi
Sci China Inf Sci, 2024, 67(12): 222403
Keywords: reconfigurable; multifunction; multi-bit content-addressable memory; MCAM; bitwise operation; binary neural network; edge AI; flash memory; in-memory computing; IMC
Cite as: Bai M Y, Wu S H, Wang H, et al. A 3D MCAM architecture based on flash memory enabling binary neural network computing for edge AI. Sci China Inf Sci, 2024, 67(12): 222403, doi: 10.1007/s11432-023-4019-4
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Artificial afferent neurons based on the metal-insulator transition of VO2
Chen, Jiayao; Yin, Lei; Wang, Yue; Wang, Haolin; Li, Dongke; Yang, Deren; Pi, Xiaodong
Sci China Inf Sci, 2024, 67(11): 212401
Keywords: vanadium dioxide; metal-insulator transition; artificial afferent neurons; pulsed voltage signal; output frequency
Cite as: Chen J Y, Yin L, Wang Y, et al. Artificial afferent neurons based on the metal-insulator transition of VO2. Sci China Inf Sci, 2024, 67(11): 212401, doi: 10.1007/s11432-023-3959-6
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Demonstration of normally-off p-channel GaN transistor with high threshold voltage and low subthreshold swing based on single p-GaN
Li, Yangfeng; Dong, Zian; Chen, Shuai; Wang, Qin; Li, Tong; Chen, Shulin; Zheng, Kun; Zhang, Jie; Ding, Guojian; Wang, Yang; Jia, Haiqiang; Yang, Rong; Liao, Lei
Sci China Inf Sci, 2024, 67(9): 199403
Keywords: p-channel; GaN; Normally-off; MISFETs; Vth
Cite as: Li Y F, Dong Z A, Chen S, et al. Demonstration of normally-off p-channel GaN transistor with high threshold voltage and low subthreshold swing based on single p-GaN. Sci China Inf Sci, 2024, 67(9): 199403, doi: 10.1007/s11432-024-4120-y
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Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic
Zhang, Yong; Tan, Dongxin; Fang, Cizhe; Luo, Zheng-Dong; Yang, Qiyu; Zhang, Qiao; Zhang, Yu; Gan, Xuetao; Liu, Yan; Hao, Yue; Han, Genquan
Sci China Inf Sci, 2024, 67(9): 199402
Keywords: FeFET; photosensor; non-volatile; optoelectronic hybrid logic; in-sensor computing
Cite as: Zhang Y, Tan D X, Fang C Z, et al. Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic. Sci China Inf Sci, 2024, 67(9): 199402, doi: 10.1007/s11432-024-4117-y
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High performance 2T0C DRAM cells based on atomic-layer-deposited InAlZnO FETs
Xiong, Wen; Luo, Binbin; Meng, Wei; Zhu, Bao; Wu, Xiaohan; Ding, Shi-Jin
Sci China Inf Sci, 2024, 67(9): 199401
Keywords: 2T0C DRAM; atomic layer deposition; amorphous oxide semiconductor; thin-film transistor; nano-device
Cite as: Xiong W, Luo B B, Meng W, et al. High performance 2T0C DRAM cells based on atomic-layer-deposited InAlZnO FETs. Sci China Inf Sci, 2024, 67(9): 199401, doi: 10.1007/s11432-024-4112-x
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Tuning the ferroelectricity of Hf0.5Zr0.5O2 with alloy electrodes
Liu, Keqin; Dang, Bingjie; Yang, Zhiyu; Zhang, Teng; Yang, Zhen; Bai, Jinxuan; Pan, Zelun; Huang, Ru; Yang, Yuchao
Sci China Inf Sci, 2024, 67(8): 182402
Keywords: ferroelectric hafnium oxide; alloy electrode; gradual modulation; temperature stability
Cite as: Liu K Q, Dang B J, Yang Z Y, et al. Tuning the ferroelectricity of Hf0.5Zr0.5O2 with alloy electrodes. Sci China Inf Sci, 2024, 67(8): 182402, doi: 10.1007/s11432-023-3932-2
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Efficient implementation of majority-inverter graph logic and arithmetic functions with memristor arrays
Gan, Zhouchao; Zhang, Dongdong; Zhang, Chenyu; Ma, Yinghao; Miao, Xiangshui; Wang, Xingsheng
Sci China Inf Sci, 2024, 67(7): 179403
Keywords: logic-in-memory; memristor; Majority-Inverter Graph; full adder; multiplier
Cite as: Gan Z C, Zhang D D, Zhang C Y, et al. Efficient implementation of majority-inverter graph logic and arithmetic functions with memristor arrays. Sci China Inf Sci, 2024, 67(7): 179403, doi: 10.1007/s11432-023-4037-4
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Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by Fe doped GaN substrate
Wang, Xiao; Lin, Zhi-Yu; Sun, Yuan-Hang; Yue, Long; Zhang, Yu-Min; Wang, Jian-Feng; Xu, Ke
Sci China Inf Sci, 2024, 67(6): 169403
Keywords: GaN HEMT; current leakage; Si spileup layer; Silvaco; Fe memory
Cite as: Wang X, Lin Z-Y, Sun Y-H, et al. Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by Fe doped GaN substrate. Sci China Inf Sci, 2024, 67(6): 169403, doi: 10.1007/s11432-024-4003-y
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Enhanced fatigue resistance of ferroelectric Al0.65Sc0.35N deposited by physical vapor deposition
Li, Yang; Yao, Danyang; Liu, Yan; Jiang, Zhi; Wang, Ruiqing; Ran, Xu; Zhou, Jiuren; Wang, Qikun; Wu, Guoqiang; Han, Genquan
Sci China Inf Sci, 2024, 67(5): 159401
Keywords: AlScN; ferroelectric; physical vapor deposition; fatigue; polarization switching; non-volatile; FeRAM
Cite as: Li Y, Yao D Y, Liu Y, et al. Enhanced fatigue resistance of ferroelectric Al0.65Sc0.35N deposited by physical vapor deposition. Sci China Inf Sci, 2024, 67(5): 159401, doi: 10.1007/s11432-023-3960-6
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Mitigating set-stuck failure in 3D phase change memory: substituting square pulses with surge pulses
Li, Ninghua; Cai, Wang; Xiang, Jun; Tong, Hao; Cheng, Weiming; Miao, Xiangshui
Sci China Inf Sci, 2024, 67(5): 152403
Keywords: surge pulse; phase change memory; PCM; integration; SET-stuck failure; SSF; square pulse
Cite as: Li N H, Cai W, Xiang J, et al. Mitigating set-stuck failure in 3D phase change memory: substituting square pulses with surge pulses. Sci China Inf Sci, 2024, 67(5): 152403, doi: 10.1007/s11432-023-3902-6
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Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure
Shi, Chunzhou; Yang, Ling; Zhang, Meng; Lu, Hao; Wu, Mei; Hou, Bin; Niu, Xuerui; Yu, Qian; Liu, Wenliang; Gao, Wenze; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2024, 67(4): 149401
Keywords: GaN; Double-channel; AlGaN/GaN heterostructure; Drain lag; RF
Cite as: Shi C Z, Yang L, Zhang M, et al. Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure. Sci China Inf Sci, 2024, 67(4): 149401, doi: 10.1007/s11432-023-3940-x
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A self-selecting memory element based on a method of interconnected ovonic threshold switching device
Wen, Jinyu; Wang, Lun; Chen, Jiangxi; Tong, Hao; Miao, Xiangshui
Sci China Inf Sci, 2024, 67(3): 139403
Keywords: ovonic threshold switching; OTS; interconnected structure; threshold voltage; polarity operation; self-selecting memory
Cite as: Wen J Y, Wang L, Chen J X, et al. A self-selecting memory element based on a method of interconnected ovonic threshold switching device. Sci China Inf Sci, 2024, 67(3): 139403, doi: 10.1007/s11432-023-3907-x
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Geometry characteristics and wide temperature behavior of silicon-based GaN surface acoustic wave resonators with ultrahigh quality factor
Yu, Guofang; Liang, Renrong; Zhao, Haiming; Xiao, Lei; Cui, Jie; Zhao, Yue; Cui, Wenpu; Wang, Jing; Xu, Jun; Fu, Jun; Ren, Tianling
Sci China Inf Sci, 2024, 67(2): 122402
Keywords: GaN/Si SAW resonator; ultrahigh Q-factor; temperature-dependent performance; mBVD; losses
Cite as: Yu G F, Liang R R, Zhao H M, et al. Geometry characteristics and wide temperature behavior of silicon-based GaN surface acoustic wave resonators with ultrahigh quality factor. Sci China Inf Sci, 2024, 67(2): 122402, doi: 10.1007/s11432-022-3698-7
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A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness
An, Sirui; Mi, Minhan; Wang, Pengfei; Liu, Sijia; Zhu, Qing; Zhang, Meng; Chen, Zhihong; Liu, Jielong; Guo, Siyin; Gong, Can; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2024, 67(1): 119402
Keywords: InAlN/GaN DC HEMTs; linearity; gate voltage swing; multi-threshold coupling; OIP3
Cite as: An S R, Mi M H, Wang P F, et al. A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness. Sci China Inf Sci, 2024, 67(1): 119402, doi: 10.1007/s11432-022-3720-9
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Transport mechanism in Hf0.5Zr0.5O2-based ferroelectric diodes
Yu, Haoran; Gong, Tiancheng; Yuan, Peng; Wang, Yuan; Gao, Zhaomeng; Xu, Xiaoxin; Sun, Ying; Cheng, Ran; Gao, Jianfeng; Li, Junfeng; Chen, Bing; Luo, Qing
Sci China Inf Sci, 2023, 66(12): 229403
Keywords: HZO; Fe-diode; transport mechanism; schottky model; hopping model
Cite as: Yu H R, Gong T C, Yuan P, et al. Transport mechanism in Hf0.5Zr0.5O2-based ferroelectric diodes. Sci China Inf Sci, 2023, 66(12): 229403, doi: 10.1007/s11432-021-3544-2
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A 3.3-Mbit/s true random number generator based on resistive random access memory
Song, Shiyue; Huang, Peng; Shen, Wensheng; Liu, Lifeng; Kang, Jinfeng
Sci China Inf Sci, 2023, 66(11): 219402
Keywords: random resistive access memory; true random number generator; stochastic number; entropy; randomness; hardware security
Cite as: Song S Y, Huang P, Shen W S, et al. A 3.3-Mbit/s true random number generator based on resistive random access memory. Sci China Inf Sci, 2023, 66(11): 219402, doi: 10.1007/s11432-022-3640-0
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Keywords: ferroelectric tunnel junction; hafnium oxide; statistical variation; crystalline phase; tunneling electroresistance; modeling and simulation
Cite as: Chang P Y, Fan M Q, Du G, et al. Intrinsic variations of ultrathin hafnium oxide-based ferroelectric tunnel junctions induced by ferroelectric-dielectric phase fluctuations. Sci China Inf Sci, 2023, 66(10): 209402, doi: 10.1007/s11432-022-3655-x
Special Topic: Recent Progress of Fundamental Research on Post-Moore Novel Devices
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Ferroelectric-like behaviors of metal-insulator-metal with amorphous dielectrics
Liu, Huan; Chen, Jiajia; Jin, Chengji; Yu, Xiao; Liu, Yan; Han, Genquan
Sci China Inf Sci, 2023, 66(10): 200410
Keywords: ferroelectric-like; mobile ion; amorphous dielectric; ZrO2; temperature
Cite as: Liu H, Chen J J, Jin C J, et al. Ferroelectric-like behaviors of metal-insulator-metal with amorphous dielectrics. Sci China Inf Sci, 2023, 66(10): 200410, doi: 10.1007/s11432-023-3759-x
Special Topic: Recent Progress of Fundamental Research on Post-Moore Novel Devices
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Breaking the energy-efficiency barriers for smart sensing applications with “Sensing with Computing” architectures
Yang, Xinghua; Liu, Zheyu; Tang, Kechao; Yin, Xunzhao; Zhuo, Cheng; Wei, Qi; Qiao, Fei
Sci China Inf Sci, 2023, 66(10): 200409
Keywords: low power consumption circuit design; sensing with computing; smart sensors; edge computing; multi-modal sensing
Cite as: Yang X H, Liu Z Y, Tang K C, et al. Breaking the energy-efficiency barriers for smart sensing applications with “Sensing with Computing” architectures. Sci China Inf Sci, 2023, 66(10): 200409, doi: 10.1007/s11432-023-3760-8
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How could imperfect device properties influence the performances of spiking neural networks?
Chen, Jingyang; Wang, Zhihao; Wang, Tong; Huang, Heming; Shao, Zheyuan; Wang, Zhe; Guo, Xin
Sci China Inf Sci, 2023, 66(8): 182403
Keywords: oxides; memristive devices; device properties; spiking neural networks; neuromorphic computing
Cite as: Chen J Y, Wang Z H, Wang T, et al. How could imperfect device properties influence the performances of spiking neural networks?. Sci China Inf Sci, 2023, 66(8): 182403, doi: 10.1007/s11432-022-3601-8
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Keywords: mobility; HfZrOx; FeFET; trapping; detrapping; endurance; retention
Cite as: Liu F N, Peng Y, Xiao W W, et al. Impact of polarization switching on the effective carrier mobility of HfZrOx ferroelectric field-effect transistor. Sci China Inf Sci, 2023, 66(6): 169402, doi: 10.1007/s11432-022-3491-6
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Neuromorphic terahertz imaging based on carbon nanotube circuits
Yang, Nan; Si, Zhizhong; Wang, Xinhe; Lin, Xiaoyang; Zhao, Weisheng
Sci China Inf Sci, 2023, 66(6): 169401
Keywords: CNTs; perception; memory; classification; STT-MTJ; THz
Cite as: Yang N, Si Z Z, Wang X H, et al. Neuromorphic terahertz imaging based on carbon nanotube circuits. Sci China Inf Sci, 2023, 66(6): 169401, doi: 10.1007/s11432-021-3533-3
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Modeling and physical mechanism analysis of the effect of a polycrystalline-ferroelectric gate on FE-FinFETs
Wang, Chengxu; Yu, Hao; Wang, Yichen; Zhang, Zichong; Miao, Xiangshui; Wang, Xingsheng
Sci China Inf Sci, 2023, 66(5): 159403
Keywords: FEFET; polycrystalline-ferroelectric; statistical variability; multi-grain model; TCAD simulation
Cite as: Wang C X, Yu H, Wang Y C, et al. Modeling and physical mechanism analysis of the effect of a polycrystalline-ferroelectric gate on FE-FinFETs. Sci China Inf Sci, 2023, 66(5): 159403, doi: 10.1007/s11432-022-3501-7
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Keywords: neural network; Flash computing array; efficient computation; weight mapping; interconnect resistance
Cite as: Yu G H, Huang P, Han R Z, et al. Co-optimization strategy between array operation and weight mapping for flash computing arrays to achieve high computing efficiency and accuracy. Sci China Inf Sci, 2023, 66(2): 129403, doi: 10.1007/s11432-021-3381-3
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Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light
Chen, Yilin; Zhu, Qing; Zhu, Jiejie; Mi, Minhan; Zhang, Meng; Zhou, Yuwei; Zhao, Ziyue; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2023, 66(2): 122401
Keywords: GaN; MIS HEMTs; off-state stress; UV light; hole trapping
Cite as: Chen Y L, Zhu Q, Zhu J J, et al. Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light. Sci China Inf Sci, 2023, 66(2): 122401, doi: 10.1007/s11432-021-3377-2
