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1.56 kV/30 A vertical β-Ga2O3 Schottky barrier diodes with composite edge terminations
Feng, Yitao; Zhou, Hong; Alghamdi, Sami; Fang, Hao; Zhang, Xiaorong; Chen, Yanbo; Tian, Guotao; Wasly, Saud; Hao, Yue; Zhang, Jincheng
Sci China Inf Sci, 2025, 68(2): 129401
Keywords: Ga2O3; Schottky diodes; high current; high breakdown voltage; edge termination; low resistance; industrial-level; power
Cite as: Feng Y T, Zhou H, Alghamdi S, et al. 1.56 kV/30 A vertical β-Ga2O3 Schottky barrier diodes with composite edge terminations. Sci China Inf Sci, 2025, 68: 129401, doi: 10.1007/s11432-024-4204-9
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Spin-orbit torque efficiency enhancement to tungsten-based SOT-MTJs by interface modification with an ultrathin MgO
Lu, Shiyang; Ning, Xiaobai; Zhang, Hongchao; Zhen, Sixi; Fan, Xiaofei; Xiong, Danrong; Zhu, Dapeng; Wang, Gefei; Liu, Hong-Xi; Cao, Kaihua; Zhao, Weisheng
Sci China Inf Sci, 2024, 67(1): 119403
Keywords: spin-orbital torque; MRAM; tungsten; interface modification; damping-like torque efficiency
Cite as: Lu S Y, Ning X B, Zhang H C, et al. Spin-orbit torque efficiency enhancement to tungsten-based SOT-MTJs by interface modification with an ultrathin MgO. Sci China Inf Sci, 2024, 67: 119403, doi: 10.1007/s11432-023-3809-3
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A strong physical unclonable function with machine learning immunity for Internet of Things application
Ren, Pengpeng; Xue, Yongkang; Jing, Linglin; Zhang, Lining; Wang, Runsheng; Ji, Zhigang
Sci China Inf Sci, 2024, 67(1): 112404
Keywords: physical unclonable function; PUF; electron traps; authentication; encryption; cryptography; security
Cite as: Ren P P, Xue Y K, Jing L L, et al. A strong physical unclonable function with machine learning immunity for Internet of Things application. Sci China Inf Sci, 2024, 67: 112404, doi: 10.1007/s11432-022-3722-8
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Bulk photovoltaic effect in two-dimensional ferroelectric α-In2Se3
Wang, Huiting; Wu, Shuaiqin; Chen, Yan; Zhao, Qianru; Zeng, Jinhua; Yin, Ruotong; Zheng, Yuqing; Liu, Chang; Zhang, Shukui; Lin, Tie; Shen, Hong; Meng, Xiangjian; Ge, Jun; Wang, Xudong; Chu, Junhao; Wang, Jianlu
Sci China Inf Sci, 2025, 68(2): 122401
Keywords: bulk photovoltaic effect; 2D ferroelectrics; 3R α-In2Se3; shift current; self-powered photodetection
Cite as: Wang H T, Wu S Q, Chen Y, et al. Bulk photovoltaic effect in two-dimensional ferroelectric α-In2Se3. Sci China Inf Sci, 2025, 68: 122401, doi: 10.1007/s11432-023-4070-8
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An isolated symmetrical 2T2R cell enabling high precision and high density for RRAM-based in-memory computing
Ling, Yaotian; Wang, Zongwei; Yang, Yuhang; Bao, Lin; Bao, Shengyu; Wang, Qishen; Cai, Yimao; Huang, Ru
Sci China Inf Sci, 2024, 67(5): 152402
Keywords: RRAM; 2T2R; multi-level storage; weight asymmetry; in-memory computing
Cite as: Ling Y T, Wang Z W, Yang Y H, et al. An isolated symmetrical 2T2R cell enabling high precision and high density for RRAM-based in-memory computing. Sci China Inf Sci, 2024, 67: 152402, doi: 10.1007/s11432-023-3887-0
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Current collapse suppressed GaN diodes with 38 Watts high RF power rectifier capability
Dang, Kui; Qiu, Zhilin; Huo, Shudong; Zhan, Peng; Liu, Huining; Zhang, Yachao; Ning, Jing; Zhou, Hong; Zhang, Jincheng
Sci China Inf Sci, 2024, 67(2): 129401
Keywords: GaN; Schottky barrier diode; SBD; high power; microwave rectifier; microwave power transmission; MPT
Cite as: Dang K, Qiu Z L, Huo S D, et al. Current collapse suppressed GaN diodes with 38 Watts high RF power rectifier capability. Sci China Inf Sci, 2024, 67: 129401, doi: 10.1007/s11432-023-3795-8
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Cited in SCI: 7
Conversion of a single-layer ANN to photonic SNN for pattern recognition
Han, Yanan; Xiang, Shuiying; Zhang, Tianrui; Zhang, Yahui; Guo, Xingxing; Shi, Yuechun
Sci China Inf Sci, 2024, 67(1): 112403
Keywords: photonic SNN; conversion; optical computing; pattern recognition; artificial neural network
Cite as: Han Y N, Xiang S Y, Zhang T R, et al. Conversion of a single-layer ANN to photonic SNN for pattern recognition. Sci China Inf Sci, 2024, 67: 112403, doi: 10.1007/s11432-022-3699-2
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Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT
Jia, Mao; Hou, Bin; Yang, Ling; Zhang, Meng; Wu, Mei; Lu, Hao; Hong, Xitong; Xue, Zhiqiang; Du, Jiale; Chang, Qingyuan; Xiao, Qian; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2025, 68(5): 159401
Keywords: GaN HEMT; normally-off; Cu gate stack; threshold voltage stability; gate conduction mechanisms
Cite as: Jia M, Hou B, Yang L, et al. Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT. Sci China Inf Sci, 2025, 68: 159401, doi: 10.1007/s11432-024-4343-5
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MoS2 synaptic transistor with one-step manufacture
Guo, Yihao; Wang, Yang; Deng, Wenjie; Wu, Yi; Li, Jingtao; Li, Kexin; Zhao, Yuehui; Yu, Songlin; Wang, Xiaoting; Zhang, Yongzhe; Yan, Hui
Sci China Inf Sci, 2025, 68(1): 112401
Keywords: process optimization; artificial synaptic device; one-step manufacture; synaptic plasticity; bionic simulation
Cite as: Guo Y H, Wang Y, Deng W J, et al. MoS2 synaptic transistor with one-step manufacture. Sci China Inf Sci, 2025, 68: 112401, doi: 10.1007/s11432-024-4093-1
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Cited in SCI: 4
Smaller, faster, lower-power analog RRAM matrix computing circuits without performance compromise
Luo, Yubiao; Zuo, Pushen; Wang, Shiqing; Sun, Zhong; Huang, Ru
Sci China Inf Sci, 2025, 68(2): 122402
Keywords: analog computing; in-memory computing; matrix; resistive memory; conductance compensation
Cite as: Luo Y B, Zuo P S, Wang S Q, et al. Smaller, faster, lower-power analog RRAM matrix computing circuits without performance compromise. Sci China Inf Sci, 2025, 68: 122402, doi: 10.1007/s11432-023-3990-4
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Tuning the ferroelectricity of Hf0.5Zr0.5O2 with alloy electrodes
Liu, Keqin; Dang, Bingjie; Yang, Zhiyu; Zhang, Teng; Yang, Zhen; Bai, Jinxuan; Pan, Zelun; Huang, Ru; Yang, Yuchao
Sci China Inf Sci, 2024, 67(8): 182402
Keywords: ferroelectric hafnium oxide; alloy electrode; gradual modulation; temperature stability
Cite as: Liu K Q, Dang B J, Yang Z Y, et al. Tuning the ferroelectricity of Hf0.5Zr0.5O2 with alloy electrodes. Sci China Inf Sci, 2024, 67: 182402, doi: 10.1007/s11432-023-3932-2
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Performance improvement of β-Ga2O3 SBD-based rectifier with embedded microchannels in ceramic substrate
Hong, Wen; Zhang, Chao; Zhang, Fang; Zheng, Xuefeng; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2024, 67(5): 159404
Keywords: β-Ga2O3; Rectifier; Embedded; Cooling; output power
Cite as: Hong W, Zhang C, Zhang F, et al. Performance improvement of β-Ga2O3 SBD-based rectifier with embedded microchannels in ceramic substrate. Sci China Inf Sci, 2024, 67: 159404, doi: 10.1007/s11432-024-3992-8
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Cited in SCI: 3
Breakdown voltage over 10 kV β-Ga2O3 heterojunction FETs with RESURF structure
Wang, Chenlu; Sun, Sihan; Su, Chunxu; Zhou, Hong; Zhang, Jincheng; Hao, Yue
Sci China Inf Sci, 2025, 68(6): 169401
Keywords: Ga2O3; heterojunction; JFET; Breakdown voltage; RESURF
Cite as: Wang C L, Sun S H, Su C X, et al. Breakdown voltage over 10 kV β-Ga2O3 heterojunction FETs with RESURF structure. Sci China Inf Sci, 2025, 68: 169401, doi: 10.1007/s11432-024-4332-4
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A monolithic 3D IGZO-RRAM-SRAM-integrated architecture for robust and efficient compute-in-memory enabling equivalent-ideal device metrics
Yan, Shengzhe; Cong, Zhaori; Wang, Zi; Dai, Zhuoyu; Guo, Zeyu; Qian, Zhihang; Li, Xufan; Zheng, Xu; Chen, Chuanke; Lu, Nianduan; Dou, Chunmeng; Yang, Guanhua; Xu, Xiaoxin; Geng, Di; Yue, Jinshan; Wang, Lingfei; Li, Ling; Liu, Ming
Sci China Inf Sci, 2025, 68(2): 122404
Keywords: compute-in-memory; CIM; monolithic 3D; RRAM; IGZO; 3D-stack; simulation
Cite as: Yan S Z, Cong Z R, Wang Z, et al. A monolithic 3D IGZO-RRAM-SRAM-integrated architecture for robust and efficient compute-in-memory enabling equivalent-ideal device metrics. Sci China Inf Sci, 2025, 68: 122404, doi: 10.1007/s11432-024-4078-1
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High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz
Du, Hanghai; Hao, Lu; Liu, Zhihong; Song, Zeyu; Zhang, Yachao; Dang, Kui; Zhou, Jin; Ning, Jing; Li, Zan; Zhang, Jincheng; Hao, Yue
Sci China Inf Sci, 2024, 67(6): 169402
Keywords: compound semiconductor devices; millimeter wave RF devices; ohmic contacts; Gallium Nitride; AlGaN; GaN
Cite as: Du H H, Hao L, Liu Z H, et al. High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz. Sci China Inf Sci, 2024, 67: 169402, doi: 10.1007/s11432-024-3998-2
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Geometry characteristics and wide temperature behavior of silicon-based GaN surface acoustic wave resonators with ultrahigh quality factor
Yu, Guofang; Liang, Renrong; Zhao, Haiming; Xiao, Lei; Cui, Jie; Zhao, Yue; Cui, Wenpu; Wang, Jing; Xu, Jun; Fu, Jun; Ren, Tianling
Sci China Inf Sci, 2024, 67(2): 122402
Keywords: GaN/Si SAW resonator; ultrahigh Q-factor; temperature-dependent performance; mBVD; losses
Cite as: Yu G F, Liang R R, Zhao H M, et al. Geometry characteristics and wide temperature behavior of silicon-based GaN surface acoustic wave resonators with ultrahigh quality factor. Sci China Inf Sci, 2024, 67: 122402, doi: 10.1007/s11432-022-3698-7
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Cryptographic characteristics of true random number generators using gated silicon nanosheet diodes
Jeon, Juhee; Shin, Yunwoo; Heo, Hyojoo; Son, Jaemin; Ryu, Seungho; Cho, Kyoungah; Kim, Sangsig
Sci China Inf Sci, 2025, 68(6): 162401
Keywords: true random number generator; gated p+-i-n+ diode; image encryption; secret key; silicon nanosheet
Cite as: Jeon J, Shin Y, Heo H, et al. Cryptographic characteristics of true random number generators using gated silicon nanosheet diodes. Sci China Inf Sci, 2025, 68: 162401, doi: 10.1007/s11432-024-4317-6
Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
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Enhanced memory window and reliability of α-IGZO FeFET enabled by atomic-layer-deposited HfO2 interfacial layer
Liu, Yinchi; Lu, Xun; Li, Shiyu; Zhang, Hao; Yang, Jining; Guo, Yeye; Golosov, Dmitriy Anatolyevich; Gu, Chenjie; Lu, Hongliang; Ji, Zhigang; Ding, Shijin; Liu, Wenjun
Sci China Inf Sci, 2025, 68(6): 160405
Keywords: HfO2; interfacial layer; Hf0.5Zr0.5O2; memory window; reliability
Cite as: Liu Y C, Lu X, Li S Y, et al. Enhanced memory window and reliability of α-IGZO FeFET enabled by atomic-layer-deposited HfO2 interfacial layer. Sci China Inf Sci, 2025, 68: 160405, doi: 10.1007/s11432-024-4429-7
Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
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Polynomial geometric transformation based on IGZO charge trapping RAM array for machine vision calibration
Bao, Lin; Zhang, Haisu; Wang, Zongwei; Shan, Linbo; Wang, Cuimei; Cai, Yimao; Huang, Shanguo
Sci China Inf Sci, 2025, 68(6): 160403
Keywords: in-memory computing; oxide semiconductor; polynomial evaluation; charge trapping device
Cite as: Bao L, Zhang H S, Wang Z W, et al. Polynomial geometric transformation based on IGZO charge trapping RAM array for machine vision calibration. Sci China Inf Sci, 2025, 68: 160403, doi: 10.1007/s11432-024-4420-5
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Performance limit prediction of atomically thin In2O3 transistors
Yang, Zongmeng; Fang, Shibo; Xu, Linqiang; Li, Qiuhui; Dong, Jichao; Li, Ying; Wu, Baochun; Ghafoor, Mughira; Yang, Peiqi; Guo, Ying; Hou, Shimin; Luo, Zhaochu; Lu, Jing
Sci China Inf Sci, 2025, 68(4): 149403
Keywords: In2O3; ab initio quantum transport simulation; ITRS; electron-phonon coupling; thin film transistor
Cite as: Yang Z M, Fang S B, Xu L Q, et al. Performance limit prediction of atomically thin In2O3 transistors. Sci China Inf Sci, 2025, 68: 149403, doi: 10.1007/s11432-024-4316-6
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Demonstration of normally-off p-channel GaN transistor with high threshold voltage and low subthreshold swing based on single p-GaN
Li, Yangfeng; Dong, Zian; Chen, Shuai; Wang, Qin; Li, Tong; Chen, Shulin; Zheng, Kun; Zhang, Jie; Ding, Guojian; Wang, Yang; Jia, Haiqiang; Yang, Rong; Liao, Lei
Sci China Inf Sci, 2024, 67(9): 199403
Keywords: p-channel; GaN; Normally-off; MISFETs; Vth
Cite as: Li Y F, Dong Z A, Chen S, et al. Demonstration of normally-off p-channel GaN transistor with high threshold voltage and low subthreshold swing based on single p-GaN. Sci China Inf Sci, 2024, 67: 199403, doi: 10.1007/s11432-024-4120-y
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High performance 2T0C DRAM cells based on atomic-layer-deposited InAlZnO FETs
Xiong, Wen; Luo, Binbin; Meng, Wei; Zhu, Bao; Wu, Xiaohan; Ding, Shi-Jin
Sci China Inf Sci, 2024, 67(9): 199401
Keywords: 2T0C DRAM; atomic layer deposition; amorphous oxide semiconductor; thin-film transistor; nano-device
Cite as: Xiong W, Luo B B, Meng W, et al. High performance 2T0C DRAM cells based on atomic-layer-deposited InAlZnO FETs. Sci China Inf Sci, 2024, 67: 199401, doi: 10.1007/s11432-024-4112-x
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Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by Fe doped GaN substrate
Wang, Xiao; Lin, Zhi-Yu; Sun, Yuan-Hang; Yue, Long; Zhang, Yu-Min; Wang, Jian-Feng; Xu, Ke
Sci China Inf Sci, 2024, 67(6): 169403
Keywords: GaN HEMT; current leakage; Si spileup layer; Silvaco; Fe memory
Cite as: Wang X, Lin Z-Y, Sun Y-H, et al. Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by Fe doped GaN substrate. Sci China Inf Sci, 2024, 67: 169403, doi: 10.1007/s11432-024-4003-y
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Enhanced fatigue resistance of ferroelectric Al0.65Sc0.35N deposited by physical vapor deposition
Li, Yang; Yao, Danyang; Liu, Yan; Jiang, Zhi; Wang, Ruiqing; Ran, Xu; Zhou, Jiuren; Wang, Qikun; Wu, Guoqiang; Han, Genquan
Sci China Inf Sci, 2024, 67(5): 159401
Keywords: AlScN; ferroelectric; physical vapor deposition; fatigue; polarization switching; non-volatile; FeRAM
Cite as: Li Y, Yao D Y, Liu Y, et al. Enhanced fatigue resistance of ferroelectric Al0.65Sc0.35N deposited by physical vapor deposition. Sci China Inf Sci, 2024, 67: 159401, doi: 10.1007/s11432-023-3960-6
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A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness
An, Sirui; Mi, Minhan; Wang, Pengfei; Liu, Sijia; Zhu, Qing; Zhang, Meng; Chen, Zhihong; Liu, Jielong; Guo, Siyin; Gong, Can; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2024, 67(1): 119402
Keywords: InAlN/GaN DC HEMTs; linearity; gate voltage swing; multi-threshold coupling; OIP3
Cite as: An S R, Mi M H, Wang P F, et al. A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness. Sci China Inf Sci, 2024, 67: 119402, doi: 10.1007/s11432-022-3720-9
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Mobile-ionic FETs with ultra-scaled amorphous dielectric achieving ferroelectric behaviors and sub-kT/q swing with temperature down to 77 K
Liu, Huan; Yang, Qiyu; Jin, Chengji; Chen, Jiajia; Chou, Lulu; Yu, Xiao; Liu, Yan; Han, Genquan
Sci China Inf Sci, 2024, 67(1): 119401
Keywords: Ferroelectric-like; steep subthreshold swing; transistor; mobile ionic; amorphous dielectric
Cite as: Liu H, Yang Q Y, Jin C J, et al. Mobile-ionic FETs with ultra-scaled amorphous dielectric achieving ferroelectric behaviors and sub-kT/q swing with temperature down to 77 K. Sci China Inf Sci, 2024, 67: 119401, doi: 10.1007/s11432-022-3721-0
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Realtime observation of "spring fracture" like AlGaN/GaN HEMT failure under bias
Zhu, Qing; Wang, Zhenni; Wei, Yuxiang; Yang, Ling; Lu, Xiaoli; Zhu, Jiejie; Zhong, Peng; Lei, Yimin; Ma, Xiaohua
Sci China Inf Sci, 2024, 67(1): 114401
Keywords: in-situ TEM; AlGaN/GaN; bending coutours; Joule heat; reliability
Cite as: Zhu Q, Wang Z N, Wei Y X, et al. Realtime observation of "spring fracture" like AlGaN/GaN HEMT failure under bias. Sci China Inf Sci, 2024, 67: 114401, doi: 10.1007/s11432-023-3867-4
REVIEW
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Model quantization for computing-in-memory: a survey
Sun, Sifan; Bai, Jinyu; Chen, Hanting; Deng, Kaiwen; Xie, Zhiwei; Li, Jingjing; Cao, Bin; Zhang, He; Kang, Wang; Zhao, Weisheng
Sci China Inf Sci, 2025, 68(11): 211401
Keywords: deep neural network; model quantization; quantized neural network; computing-in-memory; neural network accelerator
Cite as: Sun S F, Bai J Y, Chen H T, et al. Model quantization for computing-in-memory: a survey. Sci China Inf Sci, 2025, 68: 211401, doi: 10.1007/s11432-024-4522-8
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Keywords: magnetic tunnel junction; spin-orbit torque; magnetic random-access memory; spin transfer torque; magnetization switching
Cite as: Ye H J, Yan Z J, Wang M, et al. Critical current for field-free switching of the in-plane magnetization in the three-terminal magnetic tunnel junction. Sci China Inf Sci, 2025, 68: 209404, doi: 10.1007/s11432-025-4455-2
Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
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A parallel computing-in-memory accelerator utilizing FeRAM array with retention loss correction
Liu, Can; Shen, Zhihao; Mao, Wei; Li, Bo; Lv, Xiaomeng; Li, Fuyi; Xiao, Peng; Hong, Haiqiao; Zhao, Shirui; Zheng, Siying; Li, Xiaoxi; Yu, Xiao; Zhou, Jiuren; Chen, Bing; Liu, Yan; Han, Genquan
Sci China Inf Sci, 2025, 68(6): 160409
Keywords: ferroelectric capacitor; non-ideality; computing-in-memory; 1T1C; parallel; retention loss; FeRAM; array
Cite as: Liu C, Shen Z H, Mao W, et al. A parallel computing-in-memory accelerator utilizing FeRAM array with retention loss correction. Sci China Inf Sci, 2025, 68: 160409, doi: 10.1007/s11432-024-4421-0
Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
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Crystal orientation-modulated ferroelectric and dielectric properties in Hf0.5Zr0.5O2 thin films
Li, Yu-Chun; Li, Xiao-Xi; Xu, Zhongshan; Huang, Zi-Ying; Yang, Yingguo; Zhu, Xiao-Na; Li, Ming; Zhang, David Wei; Lu, Hong-Liang
Sci China Inf Sci, 2025, 68(6): 160406
Keywords: ferroelectric; Hf0.5Zr0.5O2; oxygen dose; GIWAXS; orientation; dielectric
Cite as: Li Y-C, Li X-X, Xu Z S, et al. Crystal orientation-modulated ferroelectric and dielectric properties in Hf0.5Zr0.5O2 thin films. Sci China Inf Sci, 2025, 68: 160406, doi: 10.1007/s11432-024-4428-8
Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
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Ferroelectric materials, devices, and chips technologies for advanced computing and memory applications: development and challenges
Yu, Xiao; Zhong, Ni; Cheng, Yan; Xin, Tianjiao; Luo, Qing; Gong, Tiancheng; Chen, Jiezhi; Wu, Jixuan; Cheng, Ran; Fu, Zhiyuan; Tang, Kechao; Luo, Jin; Ren, Tianling; Xue, Fei; Chen, Lin; Wang, Tianyu; Li, Xueqing; Li, Xiuyan; Wang, Ping; Wang, Xinqiang; Sun, Jie; Jiang, Anquan; Du, Peiyuan; Chen, Bing; Jin, Chengji; Chen, Jiajia; Qian, Haoji; Mao, Wei; Zheng, Siying; Liu, Huan; Xu, Haiwen; Liu, Can; Shen, Zhihao; Li, Xiaoxi; Li, Bochang; Luo, Zheng-Dong; Zhou, Jiuren; Liu, Yan; Hao, Yue; Han, Genquan
Sci China Inf Sci, 2025, 68(6): 160401
Keywords: ferroelectric; HfO2; zirconium oxide; ZrO2; wurtzite; AlScN; FeRAM; FeFET
Cite as: Yu X, Zhong N, Cheng Y, et al. Ferroelectric materials, devices, and chips technologies for advanced computing and memory applications: development and challenges. Sci China Inf Sci, 2025, 68: 160401, doi: 10.1007/s11432-025-4432-x
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Ferroelectrically gated two-dimensional bismuth oxyselenides for strain-invariant flexible synaptic thin-film transistors
Wen, Jie; Xiao, Fei; Luo, Zheng-Dong; Tan, Dongxin; Gan, Xuetao; Zhang, Dawei; Chu, Zhufei; Xia, Yinshui; Liu, Yan; Han, Genquan
Sci China Inf Sci, 2025, 68(5): 152401
Keywords: Bi2O2Se; FeFET; nonvolatile memory; flexible device; synaptic transistor
Cite as: Wen J, Xiao F, Luo Z-D, et al. Ferroelectrically gated two-dimensional bismuth oxyselenides for strain-invariant flexible synaptic thin-film transistors. Sci China Inf Sci, 2025, 68: 152401, doi: 10.1007/s11432-024-4304-y
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Al2O3/AlN/GaN MOS-HEMTs on 6-inch silicon substrate with high transconductance and state-of-the-art fmax×LG
Qin, Lingjie; Zhu, Jiejie; Zhang, Bowen; Zhou, Yuxi; Duan, Huantao; Ma, Huimei; Li, Mengdi; Huang, Simei; Rao, Jin; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2025, 68(3): 139403
Keywords: Al2O3/AlN/GaN; regrown ohmic; Si substrate; low-damage remote plasma oxidation pre-treatment; radio-frequency
Cite as: Qin L J, Zhu J J, Zhang B W, et al. Al2O3/AlN/GaN MOS-HEMTs on 6-inch silicon substrate with high transconductance and state-of-the-art fmax×LG. Sci China Inf Sci, 2025, 68: 139403, doi: 10.1007/s11432-024-4268-5
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3D self-rectifying memristive ternary content addressable memory for massive and exact in-memory search
Yu, Yingjie; Ren, Shengguang; Yang, Ling; Li, Yi; Miao, Xiangshui
Sci China Inf Sci, 2025, 68(3): 139402
Keywords: ternary content addressable memory; three-dimensional; self-rectifying memristor; in-memory search; parallelism
Cite as: Yu Y J, Ren S G, Yang L, et al. 3D self-rectifying memristive ternary content addressable memory for massive and exact in-memory search. Sci China Inf Sci, 2025, 68: 139402, doi: 10.1007/s11432-024-4253-9
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24.4 THz·V fT×BV figure-of-merit AlN/GaN/AlN MISHEMTs with thin AlN buffer layer
Zhang, Chaoqun; Zhou, Hong; Alghamdi, Sami; Zhang, Kun; Liu, Zhihong; Hao, Yue; Zhang, Jingcheng
Sci China Inf Sci, 2025, 68(3): 139401
Keywords: AlN/GaN; MISHEMT; thin AlN buffer; fT×BV; Johnson figure-of-merit
Cite as: Zhang C Q, Zhou H, Alghamdi S, et al. 24.4 THz·V fT×BV figure-of-merit AlN/GaN/AlN MISHEMTs with thin AlN buffer layer. Sci China Inf Sci, 2025, 68: 139401, doi: 10.1007/s11432-024-4255-5
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An AND-type 1T-FeFET array with robust write and read operations
Xu, Jiacheng; Zhao, Jiayi; Zhang, Hongrui; Qian, Haoji; Gu, Jiani; Chen, Bowen; Lin, Gaobo; Shen, Rongzong; Song, Xinda; Liu, Huan; Ding, Yian; Ma, Minglei; Zhang, Miaomiao; Yu, Xiao; Chen, Bing; Cheng, Ran; Xu, Gaobo; Yin, Huaxiang; Liu, Yan; Chen, Jiajia; Jin, Chengji; Han, Genquan
Sci China Inf Sci, 2025, 68(2): 129404
Keywords: HfO2-based Ferroelectric; FeFET; AND-type array; non-volatile memory; transistor
Cite as: Xu J C, Zhao J Y, Zhang H R, et al. An AND-type 1T-FeFET array with robust write and read operations. Sci China Inf Sci, 2025, 68: 129404, doi: 10.1007/s11432-024-4245-7
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Optimizing hardware-software co-design based on non-ideality in memristor crossbars for in-memory computing
Jiang, Pinfeng; Song, Danzhe; Huang, Menghua; Yang, Fan; Wang, Letian; Liu, Pan; Miao, Xiangshui; Wang, Xingsheng
Sci China Inf Sci, 2025, 68(2): 122406
Keywords: memristor crossbar; IR-drop; neural network; activation function; hardware-software co-design
Cite as: Jiang P F, Song D Z, Huang M H, et al. Optimizing hardware-software co-design based on non-ideality in memristor crossbars for in-memory computing. Sci China Inf Sci, 2025, 68: 122406, doi: 10.1007/s11432-024-4240-x
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Substrate bias effects in p-channel GaN-on-Si transistors
Zhao, Mengyao; Ma, Jie; Yang, Lanlan; Pan, Chuanqi; Wang, Denggui; Zhou, Jianjun; Li, Sheng; Wei, Jiaxing; Zhang, Long; Liu, Siyang; Sun, Weifeng
Sci China Inf Sci, 2025, 68(1): 119405
Keywords: buffer traps; GaN-on-Si transistor; p-channel; space charge; substrate bias effects; vertical electric field; back gate
Cite as: Zhao M Y, Ma J, Yang L L, et al. Substrate bias effects in p-channel GaN-on-Si transistors. Sci China Inf Sci, 2025, 68: 119405, doi: 10.1007/s11432-024-4213-4
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Dynamic performance enhancement in Ti/Au ohmic contacts on β-Ga2O3- on-SiC substrates: evidence from pulsed measurements
Liu, Chenyu; Wang, Yibo; Xu, Wenhui; Huang, Shuqi; Yu, Chunxiao; Yang, Zeyu; Jia, Xiaole; Li, Xiaoxi; Li, Bochang; Luo, Zhengdong; Fang, Cizhe; Liu, Yan; You, Tiangui; Ou, Xin; Han, Genquan
Sci China Inf Sci, 2025, 68(1): 119403
Keywords: Ga2O3; Titanium/Gold ohmic contact; heterogeneous; pulsed measurement; Gallium Oxide
Cite as: Liu C Y, Wang Y B, Xu W H, et al. Dynamic performance enhancement in Ti/Au ohmic contacts on β-Ga2O3- on-SiC substrates: evidence from pulsed measurements. Sci China Inf Sci, 2025, 68: 119403, doi: 10.1007/s11432-024-4195-4
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Orbitronics for energy-efficient magnetization switching
Yao, Yuxuan; Zhu, Daoqian; Xia, Qingtao; Liang, Jianing; Jiang, Yuhao; Peng, Zhiyang; Li, Jiaxu; Xiao, Chen; Xu, Renyou; Wang, Wenwen; Shang, Xiantao; Lu, Shiyang; Zhu, Dapeng; Liu, Hong-Xi; Cao, Kaihua; Zhao, Weisheng
Sci China Inf Sci, 2025, 68(1): 119402
Keywords: orbitronics; orbital hall effect; spin-orbit torque; current-induced magnetization switching; 400℃ annealing
Cite as: Yao Y X, Zhu D Q, Xia Q T, et al. Orbitronics for energy-efficient magnetization switching. Sci China Inf Sci, 2025, 68: 119402, doi: 10.1007/s11432-024-4186-6
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Artificial afferent neurons based on the metal-insulator transition of VO2
Chen, Jiayao; Yin, Lei; Wang, Yue; Wang, Haolin; Li, Dongke; Yang, Deren; Pi, Xiaodong
Sci China Inf Sci, 2024, 67(11): 212401
Keywords: vanadium dioxide; metal-insulator transition; artificial afferent neurons; pulsed voltage signal; output frequency
Cite as: Chen J Y, Yin L, Wang Y, et al. Artificial afferent neurons based on the metal-insulator transition of VO2. Sci China Inf Sci, 2024, 67: 212401, doi: 10.1007/s11432-023-3959-6
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Effects of the VGS sweep range on the short channel effect in negative capacitance FinFETs
Zhang, Fan; Zhang, Zhaohao; Yao, Jiaxin; Zhang, Qingzhu; Xu, Gaobo; Wu, Zhenhua; Liu, Huan; Han, Genquan; Liu, Yan; Yin, Huaxiang
Sci China Inf Sci, 2024, 67(6): 169404
Keywords: DIBL; negative capacitance; FinFET; HZO; short channel effect
Cite as: Zhang F, Zhang Z H, Yao J X, et al. Effects of the VGS sweep range on the short channel effect in negative capacitance FinFETs. Sci China Inf Sci, 2024, 67: 169404, doi: 10.1007/s11432-023-4006-7
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Mitigating set-stuck failure in 3D phase change memory: substituting square pulses with surge pulses
Li, Ninghua; Cai, Wang; Xiang, Jun; Tong, Hao; Cheng, Weiming; Miao, Xiangshui
Sci China Inf Sci, 2024, 67(5): 152403
Keywords: surge pulse; phase change memory; PCM; integration; SET-stuck failure; SSF; square pulse
Cite as: Li N H, Cai W, Xiang J, et al. Mitigating set-stuck failure in 3D phase change memory: substituting square pulses with surge pulses. Sci China Inf Sci, 2024, 67: 152403, doi: 10.1007/s11432-023-3902-6
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A self-selecting memory element based on a method of interconnected ovonic threshold switching device
Wen, Jinyu; Wang, Lun; Chen, Jiangxi; Tong, Hao; Miao, Xiangshui
Sci China Inf Sci, 2024, 67(3): 139403
Keywords: ovonic threshold switching; OTS; interconnected structure; threshold voltage; polarity operation; self-selecting memory
Cite as: Wen J Y, Wang L, Chen J X, et al. A self-selecting memory element based on a method of interconnected ovonic threshold switching device. Sci China Inf Sci, 2024, 67: 139403, doi: 10.1007/s11432-023-3907-x
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Keywords: power semiconductor; ultra-wide bandgap; gallium oxide; junction termination extension; breakdown voltage
Cite as: Wan J B, Wang H Y, Tao T C, et al. Over 3 GW/cm2 low leakage vertical β-Ga2O3 Schottky rectifier featuring self-aligned multi-zone junction termination extension. Sci China Inf Sci, 2026, 69: 129404, doi: 10.1007/s11432-025-4617-1
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Keywords: spin-orbit torque; SOT; magnetic tunnel junction; MTJ; true random number generator; TRNG; relaxation time; security primitive
Cite as: Yin J L, Zhang X Y, Zhang B Y, et al. High-performance true random number generator based on SOT-MTJ spin relaxation. Sci China Inf Sci, 2026, 69: 129403, doi: 10.1007/s11432-025-4595-5
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Keywords: h-BN; coordinated B diffusion; AlGaN HEMT; GaN HEMT; quasi-van der Waals epitaxy; ION/IOFF ratio
Cite as: Zhang Y N, Wu H D, Zhang H R, et al. Coordinated B diffusion Gaussian distribution AlGaN/GaN HEMT device by quasi-van der Waals epitaxy. Sci China Inf Sci, 2026, 69: 129402, doi: 10.1007/s11432-025-4482-1
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Physical structure-based small signal modeling for GaN Fin-HEMTs
Zhao, Ziyue; Lu, Yang; Yi, Chupeng; Feng, Ting; Liu, Xin; Zhao, Wei; Yao, Guanghai; Chen, Yilin; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2026, 69(2): 129401
Keywords: Fin-HEMT; small signal model; GaN; physical structure-based; parameter
Cite as: Zhao Z Y, Lu Y, Yi C P, et al. Physical structure-based small signal modeling for GaN Fin-HEMTs. Sci China Inf Sci, 2026, 69: 129401, doi: 10.1007/s11432-025-4514-x
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Keywords: reconfigurable; multifunctional; universal content addressable memory; boolean logic; in-memory computing
Cite as: Guo X Y, Feng Y, Guo P, et al. Universal content-addressable memory with high-endurance flash for functionally complete logic-in-memory computing. Sci China Inf Sci, 2026, 69: 122403, doi: 10.1007/s11432-025-4507-0
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Keywords: GaN; AlGa; AlGa HEMTs; GaN HEMTs; graded-AlGaN; graded-InGaN; high linearity
Cite as: Yu Q, Yang L, Zhang L, et al. High linearity and high-power of composite component graded-AlGaN/graded-InGaN/GaN HEMTs. Sci China Inf Sci, 2026, 69: 122402, doi: 10.1007/s11432-025-4527-1
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Revisiting a classic form of memory-centric computing—lookup table
Dai, Weibang; Chen, Xiaogang; Song, Sannian; Chen, Houpeng; Li, Shunfen; Hong, Tao; Jiao, Zhenhao; Song, Zhitang
Sci China Inf Sci, 2026, 69(1): 119404
Keywords: LUT-based computing; near-memory computing; compute-in-memory; emerging non-volatile memory; memory-centric computing
Cite as: Dai W B, Chen X G, Song S N, et al. Revisiting a classic form of memory-centric computing—lookup table. Sci China Inf Sci, 2026, 69: 119404, doi: 10.1007/s11432-025-4521-4
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32 x 32 β-Ga2O3 MOS solar-blind ultraviolet detector array and its properties
Chen, Haifeng; Wu, Chenlu; Liu, Xuyang; Chen, Chunling; Wang, Huorong; Lu, Qin; Liu, Xiangtai; Ni, Jinyu; Wang, Zhan; Wang, Shaoqing
Sci China Inf Sci, 2026, 69(1): 119403
Keywords: Ga2O3; solar-blind ultraviolet; MOSFET; photodetector array; gate-controlled reset
Cite as: Chen H F, Wu C L, Liu X Y, et al. 32 x 32 β-Ga2O3 MOS solar-blind ultraviolet detector array and its properties. Sci China Inf Sci, 2026, 69: 119403, doi: 10.1007/s11432-025-4506-1
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A 1-10 GHz frequency-agile high-power GaN linear photoconductive semiconductor switch
Wang, Xu; Lu, Xiaoli; Wang, Ye; Yang, Ruiqi; Chen, Xiangjin; Liu, Jingliang; He, Yunlong; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2026, 69(1): 119402
Keywords: frequency-agile RF device; linearly modulated PCSS; GaN microwave photonics; high power RF device; X-band
Cite as: Wang X, Lu X L, Wang Y, et al. A 1-10 GHz frequency-agile high-power GaN linear photoconductive semiconductor switch. Sci China Inf Sci, 2026, 69: 119402, doi: 10.1007/s11432-025-4499-6
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Variation-aware optimization of salicide-enhanced tunnel FET technology based on 300 mm foundry platform
Wang, Kaifeng; Li, Yiqing; Ren, Ye; Wu, Yongqin; Bu, Weihai; Huang, Qianqian; Huang, Ru
Sci China Inf Sci, 2026, 69(1): 119401
Keywords: tunnel FET; variability; ion implantation; CMOS; silicide
Cite as: Wang K F, Li Y Q, Ren Y, et al. Variation-aware optimization of salicide-enhanced tunnel FET technology based on 300 mm foundry platform. Sci China Inf Sci, 2026, 69: 119401, doi: 10.1007/s11432-025-4495-3
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Keywords: gallium nitride; GaN; Schottky barrier diode; SBD; limiter; heterogeneous integrate
Cite as: Zhang J C, Huo S D, Zhang Z X, et al. First demonstration of heterogeneous integrated limiter chip with breakdown-enhanced GaN SBDs. Sci China Inf Sci, 2026, 69: 112403, doi: 10.1007/s11432-025-4681-1
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Doping and minority carrier lifetime uniformity of 4H-SiC homoepitaxial layers: role of C/Si ratio distribution
Liu, Wenji; Tong, Zhouyu; Zhang, Cong; Han, Xuefeng; Wang, Rong; Yang, Deren; Pi, Xiaodong
Sci China Inf Sci, 2025, 68(10): 209401
Keywords: 4H-SiC; homoepitaxy; C/Si ratio; doping uniformity; minority carrier lifetime
Cite as: Liu W J, Tong Z Y, Zhang C, et al. Doping and minority carrier lifetime uniformity of 4H-SiC homoepitaxial layers: role of C/Si ratio distribution. Sci China Inf Sci, 2025, 68: 209401, doi: 10.1007/s11432-024-4385-5
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Keywords: ferroelectric memristors; optimal DC power; synaptic devices; potentiation and depression; hafnium silicon oxide
Cite as: Youn C, Kim S. Improved synaptic properties of HfSiOx-based ferroelectric memristors by optimizing Ti/N ratio in TiN top electrode for neuromorphic computing. Sci China Inf Sci, 2025, 68: 202404, doi: 10.1007/s11432-025-4483-1
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Keywords: bifunctional monolithic device; 360◦ omnidirectional photodetector; self-driven photodetection; artificial synapse; (In,Ga)N nanowire; neural network
Cite as: Chang Y Y, Jiang M, Ji L, et al. Bifunctional monolithic transparent device for both neuromorphic computing and omnidirectional self-driven photodetection. Sci China Inf Sci, 2025, 68: 202403, doi: 10.1007/s11432-024-4360-9
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High-performance SiN/AlGaN/GaN MIS-HEMTs on Si substrate with LPCVD-SiN passivation and n+-InGaN ohmic contacts
Li, Mengdi; Zhu, Jiejie; Zhang, Sheng; Zhang, Bowen; Zhou, Yuxi; Yuan, Dayan; Qin, Lingjie; Zhang, Mingchen; Chang, Qingyuan; Yi, Chupeng; Wei, Ke; Liu, Xinyu; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2025, 68(10): 202402
Keywords: GaN metal-insulator-semiconductor high electron mobility transistors; MIS-HEMTs; low pressure chemical vapor deposition SiN; regrown ohmic; Si substrate; low-voltage RF applications
Cite as: Li M D, Zhu J J, Zhang S, et al. High-performance SiN/AlGaN/GaN MIS-HEMTs on Si substrate with LPCVD-SiN passivation and n+-InGaN ohmic contacts. Sci China Inf Sci, 2025, 68: 202402, doi: 10.1007/s11432-024-4460-y
REVIEW
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Expansion of the memory pyramid in the era of large models: compute-intensive compute-in-memory and memory-intensive compute-in-memory
Liu, Zhichao; Zhang, Yanqi; Zhang, Zhican; Yang, Yi; Zhang, Zhaoyang; Wang, Xing; Chen, Jinwu; Li, Xiaomin; Si, Xin; Yang, Jun
Sci China Inf Sci, 2025, 68(10): 201401
Keywords: compute-in-memory; artificial intelligence; memory pyramid; compute-intensive; memory-intensive
Cite as: Liu Z C, Zhang Y Q, Zhang Z C, et al. Expansion of the memory pyramid in the era of large models: compute-intensive compute-in-memory and memory-intensive compute-in-memory. Sci China Inf Sci, 2025, 68: 201401, doi: 10.1007/s11432-024-4354-y
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3-bit memory operation of capacitor-less one-transistor one-diode DRAM cell
Ryu, Seungho; Cho, Kyoungah; Kim, Sangsig
Sci China Inf Sci, 2025, 68(9): 199401
Keywords: amorphous indium-tin-gallium-zinc-oxide; thin-film transistor; gated silicon diode; capacitor-less DRAM; multibit memory
Cite as: Ryu S, Cho K, Kim S. 3-bit memory operation of capacitor-less one-transistor one-diode DRAM cell. Sci China Inf Sci, 2025, 68: 199401, doi: 10.1007/s11432-025-4389-y
Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
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Keywords: 2T0C DRAM; ITO transistors; 3D-stacked; write speed; data retention
Cite as: Zhu S W, Hu Q L, Gu C R, et al. Scaled 3D-stacked 2T0C DRAM based on indium-tin-oxide transistors with long data retention and fast write speed of 10 ns. Sci China Inf Sci, 2025, 68: 160410, doi: 10.1007/s11432-024-4413-2
Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
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Temperature-dependent wakeup behavior in back-end-of-line compatible ultra-thin HfxZr1−xO2 ferroelectric film
Li, Xiaopeng; Tai, Lu; Dou, Xiaoyu; Feng, Yang; Zhang, Dong; Zhan, Xuepeng; Wu, Jixuan; Gong, Xiao; Chen, Jiezhi
Sci China Inf Sci, 2025, 68(6): 160408
Keywords: ferroelectric; HZO; wakeup behavior; BEOL compatibility; ultra-thin film
Cite as: Li X P, Tai L, Dou X Y, et al. Temperature-dependent wakeup behavior in back-end-of-line compatible ultra-thin HfxZr1−xO2 ferroelectric film. Sci China Inf Sci, 2025, 68: 160408, doi: 10.1007/s11432-024-4407-x
Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
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Prospects and challenges of HfO2-based ferroelectric devices
Takagi, Shinichi; Takenaka, Mitsuru; Toprasertpong, Kasidit
Sci China Inf Sci, 2025, 68(6): 160407
Keywords: ferroelectric device; FeFET; FeRAM; HfO2; reservoir computing
Cite as: Takagi S, Takenaka M, Toprasertpong K. Prospects and challenges of HfO2-based ferroelectric devices. Sci China Inf Sci, 2025, 68: 160407, doi: 10.1007/s11432-025-4372-4
Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
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Co-optimization of ferroelectric gate stacks on operation voltage and memory window for next-generation NAND flash
Chen, Bo; Liu, Yizhi; Wu, Yifan; Sang, Pengpeng; Wu, Jixuan; Zhan, Xuepeng; Chen, Jiezhi
Sci China Inf Sci, 2025, 68(6): 160404
Keywords: TiO2; gate stack; HZO; memory window
Cite as: Chen B, Liu Y Z, Wu Y F, et al. Co-optimization of ferroelectric gate stacks on operation voltage and memory window for next-generation NAND flash. Sci China Inf Sci, 2025, 68: 160404, doi: 10.1007/s11432-024-4406-y
Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
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Improvement with low operation voltage in ultrathin La-doped Hf0.5Zr0.5O2 ferroelectric capacitors
Zeng, Min; Yan, Shiwei; Liu, Shiyuan; Fu, Tianyue; Liu, Honggang; Hu, Qianlan; Wu, Yanqing
Sci China Inf Sci, 2025, 68(6): 160402
Keywords: atomic layer deposition; hafnium zirconium oxide; HZO; ferroelectric capacitor; endurance; reliability
Cite as: Zeng M, Yan S W, Liu S Y, et al. Improvement with low operation voltage in ultrathin La-doped Hf0.5Zr0.5O2 ferroelectric capacitors. Sci China Inf Sci, 2025, 68: 160402, doi: 10.1007/s11432-024-4412-3
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Analysis and fabrication of a SiC super-junction termination structure in a state of charge imbalance
Kang, Haobo; Du, Fengyu; Yuan, Hao; Bai, Boyi; Zhou, Yu; Li, Jingyu; Han, Chao; Tang, Xiaoyan; Song, Qingwen; Zhang, Yuming
Sci China Inf Sci, 2025, 68(4): 149404
Keywords: silicon carbide; super-junction; charge-imbalance; termination structure; schottky diode
Cite as: Kang H B, Du F Y, Yuan H, et al. Analysis and fabrication of a SiC super-junction termination structure in a state of charge imbalance. Sci China Inf Sci, 2025, 68: 149404, doi: 10.1007/s11432-024-4318-6
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High linearity GaN HEMT by optimized three-dimensional-gated modulation via top-MIS-gate nanowire channel structure
Gong, Can; Mi, Minhan; Zhou, Yuwei; Wang, Pengfei; Li, Hanzhen; Wen, Xinyi; Meng, Ting; An, Sirui; Du, Xiang; Cheng, Kai; Zhang, Meng; Zhu, Qing; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2025, 68(4): 149401
Keywords: GaN HEMT; top-MIS-gate nanowire channel; stress-engineered in-situ SiN; linearity enhancement; gate-voltage-swing
Cite as: Gong C, Mi M H, Zhou Y W, et al. High linearity GaN HEMT by optimized three-dimensional-gated modulation via top-MIS-gate nanowire channel structure. Sci China Inf Sci, 2025, 68: 149401, doi: 10.1007/s11432-024-4302-0
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Electro-optic tuning in ferroelectric capacitor with photonic crystal nanobeam cavity
Wang, Tongtong; Zhang, Yong; Yao, Danyang; Jiang, Zhi; Tan, Dongxin; Wen, Jie; Yang, Qiyu; Gan, Xuetao; Liu, Yan; Hao, Yue; Han, Genquan
Sci China Inf Sci, 2025, 68(2): 129403
Keywords: Silicon photonics; electro-optic tuning; photonic crystal nanobeam cavities; ferroelectric capacitor; energy efficient
Cite as: Wang T T, Zhang Y, Yao D Y, et al. Electro-optic tuning in ferroelectric capacitor with photonic crystal nanobeam cavity. Sci China Inf Sci, 2025, 68: 129403, doi: 10.1007/s11432-024-4249-2
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Logic-in-memory cell enabling binary and ternary Boolean logics
Oh, Jeongyun; Jeon, Juhee; Shin, Yunwoo; Cho, Kyougah; Kim, Sangsig
Sci China Inf Sci, 2025, 68(2): 122407
Keywords: logic-in-memory; reconfigurable channel modes; ternary logic; triple-gated feedback field-effect transistors
Cite as: Oh J, Jeon J, Shin Y, et al. Logic-in-memory cell enabling binary and ternary Boolean logics. Sci China Inf Sci, 2025, 68: 122407, doi: 10.1007/s11432-024-4248-4
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Physics based circuit compatible model for hybrid antiferroelectric random access memory
Wu, Qiuxia; Peng, Yue; Xiao, Wenwu; Ma, Wenxuan; Zhang, Shuo; Sun, Litao; Zhang, Chunfu; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2025, 68(1): 119401
Keywords: antiferroelectric; AFRAM; EDA; compute-in-memory; non-volatile
Cite as: Wu Q X, Peng Y, Xiao W W, et al. Physics based circuit compatible model for hybrid antiferroelectric random access memory. Sci China Inf Sci, 2025, 68: 119401, doi: 10.1007/s11432-024-4190-4
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Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field-effect diode based on AlGaN/GaN HEMT
Wang, Fangzhou; Gao, Changhong; Ding, Guojian; Yu, Cheng; Wang, Zhuocheng; Wang, Xiaohui; Feng, Qi; Yu, Ping; Zuo, Peng; Chen, Wanjun; Wang, Yang; Jia, Haiqiang; Chen, Hong; Zhang, Bo; Wang, Zeheng
Sci China Inf Sci, 2025, 68(1): 112403
Keywords: Schottky-MIS cascode anode; lateral field-effect diode; LFED; ultralow reverse leakage current; ILEAK; forward drop and reverse leakage trade-off; AlGaN/GaN HEMTs
Cite as: Wang F Z, Gao C H, Ding G J, et al. Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field-effect diode based on AlGaN/GaN HEMT. Sci China Inf Sci, 2025, 68: 112403, doi: 10.1007/s11432-024-4197-y
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High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation
Chang, Qingyuan; Hou, Bin; Yang, Ling; Wu, Mei; Zhang, Meng; Lu, Hao; Jia, Fuchun; Niu, Xuerui; Shi, Chunzhou; Du, Jiale; Jia, Mao; Yu, Qian; Li, Shiming; Zhu, Youjun; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2024, 67(12): 229402
Keywords: GaN-on-Si; SBD; quasi-vertical; NET terminal; multi-level N ion implantation
Cite as: Chang Q Y, Hou B, Yang L, et al. High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation. Sci China Inf Sci, 2024, 67: 229402, doi: 10.1007/s11432-024-4164-1
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A 3D MCAM architecture based on flash memory enabling binary neural network computing for edge AI
Bai, Maoying; Wu, Shuhao; Wang, Hai; Wang, Hua; Feng, Yang; Qi, Yueran; Wang, Chengcheng; Chai, Zheng; Min, Tai; Wu, Jixuan; Zhan, Xuepeng; Chen, Jiezhi
Sci China Inf Sci, 2024, 67(12): 222403
Keywords: reconfigurable; multifunction; multi-bit content-addressable memory; MCAM; bitwise operation; binary neural network; edge AI; flash memory; in-memory computing; IMC
Cite as: Bai M Y, Wu S H, Wang H, et al. A 3D MCAM architecture based on flash memory enabling binary neural network computing for edge AI. Sci China Inf Sci, 2024, 67: 222403, doi: 10.1007/s11432-023-4019-4
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Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic
Zhang, Yong; Tan, Dongxin; Fang, Cizhe; Luo, Zheng-Dong; Yang, Qiyu; Zhang, Qiao; Zhang, Yu; Gan, Xuetao; Liu, Yan; Hao, Yue; Han, Genquan
Sci China Inf Sci, 2024, 67(9): 199402
Keywords: FeFET; photosensor; non-volatile; optoelectronic hybrid logic; in-sensor computing
Cite as: Zhang Y, Tan D X, Fang C Z, et al. Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic. Sci China Inf Sci, 2024, 67: 199402, doi: 10.1007/s11432-024-4117-y
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Efficient implementation of majority-inverter graph logic and arithmetic functions with memristor arrays
Gan, Zhouchao; Zhang, Dongdong; Zhang, Chenyu; Ma, Yinghao; Miao, Xiangshui; Wang, Xingsheng
Sci China Inf Sci, 2024, 67(7): 179403
Keywords: logic-in-memory; memristor; Majority-Inverter Graph; full adder; multiplier
Cite as: Gan Z C, Zhang D D, Zhang C Y, et al. Efficient implementation of majority-inverter graph logic and arithmetic functions with memristor arrays. Sci China Inf Sci, 2024, 67: 179403, doi: 10.1007/s11432-023-4037-4
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Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure
Shi, Chunzhou; Yang, Ling; Zhang, Meng; Lu, Hao; Wu, Mei; Hou, Bin; Niu, Xuerui; Yu, Qian; Liu, Wenliang; Gao, Wenze; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2024, 67(4): 149401
Keywords: GaN; Double-channel; AlGaN/GaN heterostructure; Drain lag; RF
Cite as: Shi C Z, Yang L, Zhang M, et al. Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure. Sci China Inf Sci, 2024, 67: 149401, doi: 10.1007/s11432-023-3940-x
