新材料 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 18

Bulk photovoltaic effect in two-dimensional ferroelectric α-In2Se3
Wang, Huiting; Wu, Shuaiqin; Chen, Yan; Zhao, Qianru; Zeng, Jinhua; Yin, Ruotong; Zheng, Yuqing; Liu, Chang; Zhang, Shukui; Lin, Tie; Shen, Hong; Meng, Xiangjian; Ge, Jun; Wang, Xudong; Chu, Junhao; Wang, Jianlu
Sci China Inf Sci, 2025, 68(2): 122401
Keywords: bulk photovoltaic effect; 2D ferroelectrics; 3R α-In2Se3; shift current; self-powered photodetection
Cite as: Wang H T, Wu S Q, Chen Y, et al. Bulk photovoltaic effect in two-dimensional ferroelectric α-In2Se3. Sci China Inf Sci, 2025, 68: 122401, doi: 10.1007/s11432-023-4070-8

新材料 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 6

Dipole-moment modulation of photovoltaic and photoresponse properties in 2H-MoSSe/MoS2 van der Waals heterojunctions under electric field
Wang, Yinkang; Ge, Meng; Tan, Jianing; Cai, Biao; Gang, Ouyang
Sci China Inf Sci, 2025, 68(5): 159402
Keywords: 2H-MoSSe/MoS2; van der Waals heterojunctions; dipole effect; photovoltaics; photoresponse
Cite as: Wang Y K, Ge M, Tan J N, et al. Dipole-moment modulation of photovoltaic and photoresponse properties in 2H-MoSSe/MoS2 van der Waals heterojunctions under electric field. Sci China Inf Sci, 2025, 68: 159402, doi: 10.1007/s11432-024-4344-6

新材料 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 4

Biomimetic cell in-situ self-healing PCL/CNT conductive composites for flexible pressure sensors with high sensitivity and wide linear measurement range
Meng, Xiangyu; Tang, Hongyao; Lu, Xiaozhou; Zhang, Jiayao; Shi, Yaoguang; He, Yumeng; Bao, Weimin
Sci China Inf Sci, 2026, 69(2): 122404
Keywords: biomimetic cell; self-healing; flexible pressure sensor; hierarchical microstructure; high sensitivity; wide linear measurement range
Cite as: Meng X Y, Tang H Y, Lv X Z, et al. Biomimetic cell in-situ self-healing PCL/CNT conductive composites for flexible pressure sensors with high sensitivity and wide linear measurement range. Sci China Inf Sci, 2026, 69: 122404, doi: 10.1007/s11432-025-4610-5

新材料 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 3

Robust optoelectronic dual-mode memristor enabled by ZnO/MoS2 heterojunction for synaptic bionics and in-memory computing
Liu, Xiaoyan; Gui, Youshan; Wang, Zhou; Zhou, Pengcheng; Chen, Junyuan; Guo, Tenglong; Zhang, Xin; Zhang, Suo; Wei, Xian; Wang, Jin; Lian, Xiaojuan; Wan, Xiang; He, Nan; Gu, Yan; Hu, Er-Tao; Chen, Qiang; Ling, Haifeng; Wang, Lei
Sci China Inf Sci, 2026, 69(4): 142405
Keywords: optoelectronic memristor; ZnO-MoS2 heterojunction; reliability; neuromorphic computing; artificial visual system
Cite as: Liu X Y, Gui Y S, Wang Z, et al. Robust optoelectronic dual-mode memristor enabled by ZnO/MoS2 heterojunction for synaptic bionics and in-memory computing. Sci China Inf Sci, 2026, 69: 142405, doi: 10.1007/s11432-025-4674-2

新材料 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 3

Ultrahigh thermal-stable p-type WSe2 transistors with silicon processing-compatible metal-semiconductor contacts
Huang, Junlin; Gao, Li; Chen, Zhangyi; Jia, Zeen; Lin, Yuyin; Hong, Mengyu; Yu, Huihui; Zhang, Xiankun; Zhang, Zheng; Zhang, Yue
Sci China Inf Sci, 2026, 69(3): 132402
Keywords: WSe2 transistors; p-type modulation; contact engineering; oxide layer intercalation; thermal stability
Cite as: Huang J L, Gao L, Chen Z Y, et al. Ultrahigh thermal-stable p-type WSe2 transistors with silicon processing-compatible metal-semiconductor contacts. Sci China Inf Sci, 2026, 69: 132402, doi: 10.1007/s11432-025-4698-1

新材料 REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 3

Two-dimensional van der Waals high-speed photodetectors enhanced by surface and interface engineering
Yu, Yuanfang; Tang, Senyao; Yang, Linjie; Li, Quan; Cao, Fa; Ni, Zhenhua; Lu, Junpeng; Gao, Li
Sci China Inf Sci, 2026, 69(2): 121401
Keywords: two-dimensional materials; surface engineering; interface engineering; heterostructure; high-speed photodetection
Cite as: Yu Y F, Tang S Y, Yang L J, et al. Two-dimensional van der Waals high-speed photodetectors enhanced by surface and interface engineering. Sci China Inf Sci, 2026, 69: 121401, doi: 10.1007/s11432-025-4624-x

新材料 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

Sliding-controllable on-off states in MAX3-based (M=Mn, Ni; A=Si, Ge; X=S, Se) van der Waals tunnel junctions
Tan, Jianing; Ge, Meng; Hu, Huamin; Li, Hai; Ouyang, Gang
Sci China Inf Sci, 2026, 69(1): 112402
Keywords: vdW tunnel junctions; sliding engineering; interface barrier modulation; transport properties; density functional theory
Cite as: Tan J N, Ge M, Hu H M, et al. Sliding-controllable on-off states in MAX3-based (M=Mn, Ni; A=Si, Ge; X=S, Se) van der Waals tunnel junctions. Sci China Inf Sci, 2026, 69: 112402, doi: 10.1007/s11432-025-4516-x

新材料 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

Wafer-scale fabrication of monolayer MoS2 films for two-dimensional electronic devices via multitube atmospheric-pressure chemical vapor deposition
Cheng, Zixuan; Yang, Dingyi; Wang, Yong; Wu, Yizhang; Wu, Biao; Zhang, Jiateng; Liu, Huan; Zhang, Mingwen; Gan, Xuetao; Liu, Yan; Hao, Yue; Han, Genquan
Sci China Inf Sci, 2025, 68(10): 202405
Keywords: atmospheric pressure; chemical vapor deposition; wafer-scale MoS2; second harmonic generation; FeFETs
Cite as: Cheng Z X, Yang D Y, Wang Y, et al. Wafer-scale fabrication of monolayer MoS2 films for two-dimensional electronic devices via multitube atmospheric-pressure chemical vapor deposition. Sci China Inf Sci, 2025, 68: 202405, doi: 10.1007/s11432-025-4526-2

新材料 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

Dielectric metasurface enhanced performance in multilayer WS2 pho- todetector
Zhao, Huijuan; Wang, Weiqi; Ding, Huanlin; Wang, Sumei; Tang, Zemin; Li, Shuhan; Wang, Jiaxuan; Wang, Yufan; Zhou, Qiyuan; Wang, Anran; Yu, Yuanfang; Gao, Li
Sci China Inf Sci, 2025, 68(7): 179403
Keywords: two dimensional materials; photodetectors; metasurface; light trapping; soft nanoimprinting
Cite as: Zhao H J, Wang W Q, Ding H L, et al. Dielectric metasurface enhanced performance in multilayer WS2 pho- todetector. Sci China Inf Sci, 2025, 68: 179403, doi: 10.1007/s11432-025-4362-7

Special Topic: Advanced Optoelectronics Based on Two-Dimensional Materials
新材料 PROGRESS Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

From wafer-scale growth to 3D integration: 2D WSe2 pMOS for next-generation
Jiang, Yi; He, Guiming; Zhao, Bei
Sci China Inf Sci, 2026, 69(7): 170407
Keywords: WSe2; p-type semiconductor; wafer-scale growth; pMOS devices; monolithic 3D integration
Cite as: Jiang Y, He G M, Zhao B. From wafer-scale growth to 3D integration: 2D WSe2 pMOS for next-generation. Sci China Inf Sci, 2026, 69: 170407, doi: 10.1007/s11432-026-4983-6

Special Topic: Advanced Optoelectronics Based on Two-Dimensional Materials
新材料 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Strong optical emission regulated by exciton state in two-dimensional organic molecular crystals
Yang, Yutian; Zheng, Ting; Zhao, Weiwei; Cao, Chenyun; Yang, Fang; Liu, Hongwei; Ni, Zhenhua; Lu, Junpeng
Sci China Inf Sci, 2026, 69(7): 170403
Keywords: two-dimensional materials; organic crystal; aggregation; exciton state; superradiance
Cite as: Yang Y T, Zheng T, Zhao W W, et al. Strong optical emission regulated by exciton state in two-dimensional organic molecular crystals. Sci China Inf Sci, 2026, 69: 170403, doi: 10.1007/s11432-025-4889-4

新材料 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

A memristor model for high-precision dynamic conductance and its application in neuromorphic computing
Hu, Jinhong; Shen, Siyuan; Li, Wen; Chen, Ai; Wu, Jiening; Liu, Zhenqi; Yuan, Rui; Duan, Shukai; Wang, Lidan
Sci China Inf Sci, 2026, 69(6): 169401
Keywords: memristor; memristor model; memristor simulation; analog synapse; phonetic classification
Cite as: Hu J H, Shen S Y, Li W, et al. A memristor model for high-precision dynamic conductance and its application in neuromorphic computing. Sci China Inf Sci, 2026, 69: 169401, doi: 10.1007/s11432-025-4767-6

新材料 RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Ambipolar MoS2 enabled through high-ε ferroelectric P(VDF-TrFE)
Diao, Zhaobiao; Wu, Shuaiqin; Chen, Yan; Wang, Lu; Liu, Chang; Wu, Binmin; Wang, Peng; Lin, Tie; Shen, Hong; Meng, Xiangjian; Wang, Xudong; Chu, Junhao; Wang, Jianlu
Sci China Inf Sci, 2026, 69(1): 112401
Keywords: p-type semiconductor; dielectric constant; ferroelectric modulation; MoS2; AFM
Cite as: Diao Z B, Wu S Q, Chen Y, et al. Ambipolar MoS2 enabled through high-ε ferroelectric P(VDF-TrFE). Sci China Inf Sci, 2026, 69: 112401, doi: 10.1007/s11432-025-4505-1

新材料 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Model compression and quantization optimization methods for memristive neural networks
Wang, Yu; Yan, Xiaobing; Shi, Tuo; Lyu, Bo; Qi, Yincheng; Liu, Ying; Xu, Jikang; Yang, Biao; Li, Pengfei
Sci China Inf Sci, 2025, 68(10): 209402
Keywords: memristor; network pruning; sparse neural networks; quantization weight; Bl regularization
Cite as: Wang Y, Yan X B, Shi T, et al. Model compression and quantization optimization methods for memristive neural networks. Sci China Inf Sci, 2025, 68: 209402, doi: 10.1007/s11432-024-4430-6

新材料 LETTER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Potential of boron nitride/diamond heterostructures for n- and p-type conduction
Li, Yao; Wang, Chenxu; Li, Qun; Zhang, Jinfeng; Su, Kai; Hu, Jichao; Lin, Tao; Ren, Zeyang; Zhu, Jiaduo; Zhang, Yachao; Hao, Yue
Sci China Inf Sci, 2025, 68(8): 189401
Keywords: boron nitride; diamond; heterostructure; p-type; n-type
Cite as: Li Y, Wang C X, Li Q, et al. Potential of boron nitride/diamond heterostructures for n- and p-type conduction. Sci China Inf Sci, 2025, 68: 189401, doi: 10.1007/s11432-024-4361-4