Special Topic: Silicon-compatible 2D Materials Technologies
Highly Cited in 202509
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Two-dimensional materials for future information technology: status and prospects
Qiu, Hao; Yu, Zhihao; Zhao, Tiange; Zhang, Qi; Xu, Mingsheng; Li, Peifeng; Li, Taotao; Bao, Wenzhong; Chai, Yang; Chen, Shula; Chen, Yiqi; Cheng, Hui-Ming; Dai, Daoxin; Di, Zengfeng; Dong, Zhuo; Duan, Xidong; Feng, Yuhan; Fu, Yu; Guo, Jingshu; Guo, Pengwen; Hao, Yue; He, Jun; He, Xiao; Hu, Jingyi; Hu, Weida; Hu, Zehua; Huang, Xinyue; Huang, Ziyang; Imran, Ali; Kong, Ziqiang; Li, Jia; Li, Qian; Li, Weisheng; Liao, Lei; Liu, Bilu; Liu, Can; Liu, Chunsen; Liu, Guanyu; Liu, Kaihui; Liu, Liwei; Liu, Sheng; Liu, Yuan; Lu, Donglin; Ma, Likuan; Miao, Feng; Ni, Zhenhua; Ning, Jing; Pan, Anlian; Ren, Tian-Ling; Shu, Haowen; Sun, Litao; Sun, Yue; Tao, Quanyang; Tian, Zi-Ao; Wang, Dong; Wang, Hao; Wang, Haomin; Wang, Jialong; Wang, Junyong; Wang, Wenhui; Wang, Xingjun; Wang, Yeliang; Wang, Yuwei; Wang, Zhenyu; Wen, Yao; Wu, Haidi; Wu, Hongzhao; Wu, Jiangbin; Wu, Yanqing; Xia, Longfei; Xiang, Baixu; Xing, Luwen; Xiong, Qihua; Xiong, Xiong; Xu, Jeffrey; Xu, Tao; Xu, Yang; Yang, Liu; Yang, Yi; Yang, Yuekun; Ye, Lei; Ye, Yu; Yu, Bin; Yu, Ting; Zeng, Hui; Zhang, Guangyu; Zhang, Hongyun; Zhang, Jincheng; Zhang, Kai; Zhang, Tao; Zhang, Xinbo; Zhang, Yanfeng; Zhao, Chunsong; Zhao, Yuda; Zheng, Ting; Zhou, Peng; Zhou, Shuyun; Zhu, Yuxuan; Yang, Deren; Shi, Yi; Wang, Han; Wang, Xinran
Sci China Inf Sci, 2024, 67(6): 160400
Keywords: two-dimensional materials; 2D materials; information technology; production technology; standardization of characterization; microelectronic devices; optoelectronic devices; multi-functional integration
Cite as: Qiu H, Yu Z H, Zhao T G, et al. Two-dimensional materials for future information technology: status and prospects. Sci China Inf Sci, 2024, 67: 160400, doi: 10.1007/s11432-024-4033-8
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Lead-free perovskites-based photonic synaptic devices with zero electric energy consumption
Hao, Dandan; Yang, Di; Liang, Haixia; Huang, Jia; Shan, Fukai
Sci China Inf Sci, 2024, 67(6): 162401
Keywords: photonic synaptic devices; lead-free perovskites; zero energy consumption; synaptic plasticity; Morse code
Cite as: Hao D D, Yang D, Liang H X, et al. Lead-free perovskites-based photonic synaptic devices with zero electric energy consumption. Sci China Inf Sci, 2024, 67: 162401, doi: 10.1007/s11432-023-3835-4
Special Topic: Silicon-compatible 2D Materials Technologies
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Contact engineering for temperature stability improvement of Bi-contacted MoS2 field effect transistors
Liu, Zizheng; Zhang, Qing; Huang, Xiaohe; Liu, Chunsen; Zhou, Peng
Sci China Inf Sci, 2024, 67(6): 160402
Keywords: temperature stability; semimetallic bismuth contact; semimetallic antimony contact; MoS2 FETs; time stability
Cite as: Liu Z Z, Zhang Q, Huang X H, et al. Contact engineering for temperature stability improvement of Bi-contacted MoS2 field effect transistors. Sci China Inf Sci, 2024, 67: 160402, doi: 10.1007/s11432-023-3942-2
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Keywords: 2D InSe Transistors; Ballistic; Ohmic-contact; 10 nm; More Moore
Cite as: Li H, Li Q H, Lu J. Ohmic-contact ballistic 2D InSe transistors: promising candidates for more Moore electronics. Sci China Inf Sci, 2024, 67: 137401, doi: 10.1007/s11432-023-3884-3
Special Topic: Silicon-compatible 2D Materials Technologies
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Hole mobility enhancement in monolayer WSe2 p-type transistors through molecular doping
Liu, Shiyuan; Xiong, Xiong; Wang, Xin; Shi, Xinhang; Huang, Ru; Wu, Yanqing
Sci China Inf Sci, 2024, 67(6): 160406
Keywords: CVD-grown WSe2; molecular doping; 4-NBD; p-type transistors; hole mobility
Cite as: Liu S Y, Xiong X, Wang X, et al. Hole mobility enhancement in monolayer WSe2 p-type transistors through molecular doping. Sci China Inf Sci, 2024, 67: 160406, doi: 10.1007/s11432-024-4032-6
Special Topic: Silicon-compatible 2D Materials Technologies
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Keywords: two-dimensional materials; Si-based CMOS technologies; electronics and optoelectronics; heterogeneous integration; low-power
Cite as: Xu M S, Wang Y W, Liu J W, et al. Progress on the program of Si-compatible two-dimensional semiconductor materials and devices. Sci China Inf Sci, 2024, 67: 160401, doi: 10.1007/s11432-024-3986-8
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Layer-by-layer epitaxy growth of thickness-controllable two-dimensional tungsten disulfide
Liang, Jieyuan; Zou, Zixing; Liang, Junwu; Wang, Di; Wang, Biao; Chu, Anshi; Yi, Jiali; Zhang, Cheng; Fang, Lizhen; Zhang, Tian; Liu, Huawei; Zhu, Xiaoli; Li, Dong; Pan, Anlian
Sci China Inf Sci, 2024, 67(5): 152404
Keywords: WS2; thickness-controlled growth; chemical vapor deposition; additive; carbon
Cite as: Liang J Y, Zou Z X, Liang J W, et al. Layer-by-layer epitaxy growth of thickness-controllable two-dimensional tungsten disulfide. Sci China Inf Sci, 2024, 67: 152404, doi: 10.1007/s11432-023-3941-4
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Bioinspired sensing-memory-computing integrated vision systems: biomimetic mechanisms, design principles, and applications
Huang, Yujie; Tan, Yinlong; Kang, Yan; Chen, Yabo; Tang, Yuhua; Jiang, Tian
Sci China Inf Sci, 2024, 67(5): 151401
Keywords: sensing-memory-computing architecture; neuromorphic computing; retinomorphic device; image recognition; visual system
Cite as: Huang Y J, Tan Y L, Kang Y, et al. Bioinspired sensing-memory-computing integrated vision systems: biomimetic mechanisms, design principles, and applications. Sci China Inf Sci, 2024, 67: 151401, doi: 10.1007/s11432-023-3888-0
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Highly sensitive flexible strain sensor based on the two-dimensional semiconductor tellurium with a negative gauge factor
He, Jiarui; Qu, Yusong; Chen, Shengyao; Wang, Cong; Du, Lena; Du, Xiaoshan; Zheng, Yuanyuan; Zhao, Guozhong; Tian, He
Sci China Inf Sci, 2024, 67(7): 172401
Keywords: 2D semiconductor materials; 2D tellurium; flexible electronics; strain sensors; negative gauge factor; high sensitivity
Cite as: He J R, Qu Y S, Chen S Y, et al. Highly sensitive flexible strain sensor based on the two-dimensional semiconductor tellurium with a negative gauge factor. Sci China Inf Sci, 2024, 67: 172401, doi: 10.1007/s11432-023-3938-y
Special Topic: Silicon-compatible 2D Materials Technologies
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Heterogeneous integration of 2D materials on Si charge-coupled devices as optical memory
Bian, Zheng; Tian, Feng; Li, Zongwen; Su, Xiangwei; Zhang, Tianjiao; Miao, Jialei; Yu, Bin; Xu, Yang; Zhao, Yuda
Sci China Inf Sci, 2024, 67(6): 160404
Keywords: heterogeneous integration; charge-coupled device; floating gate; optical memory; molybdenum disulfide; lightly doped silicon
Cite as: Bian Z, Tian F, Li Z W, et al. Heterogeneous integration of 2D materials on Si charge-coupled devices as optical memory. Sci China Inf Sci, 2024, 67: 160404, doi: 10.1007/s11432-024-3993-5
Special Topic: Silicon-compatible 2D Materials Technologies
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Highly responsive broadband Si-based MoS2 phototransistor on high-k dielectric
Imran, Ali; He, Xin; Liu, Jiwei; Zhu, Qinghai; Sulaman, Muhammad; Xue, Fei; Xu, Mingsheng; Yang, Deren
Sci China Inf Sci, 2024, 67(6): 160403
Keywords: photogating; photoconduction; two-dimensional materials; high k dielectric; carrier scattering; phototransistor
Cite as: Imran A, He X, Liu J W, et al. Highly responsive broadband Si-based MoS2 phototransistor on high-k dielectric. Sci China Inf Sci, 2024, 67: 160403, doi: 10.1007/s11432-024-3994-4
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Keywords: 2H-MoSSe/MoS2; van der Waals heterojunctions; dipole effect; photovoltaics; photoresponse
Cite as: Wang Y K, Ge M, Tan J N, et al. Dipole-moment modulation of photovoltaic and photoresponse properties in 2H-MoSSe/MoS2 van der Waals heterojunctions under electric field. Sci China Inf Sci, 2025, 68: 159402, doi: 10.1007/s11432-024-4344-6
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Keywords: three-dimensional CMOS circuits; printing technology; polymer-sorted semiconducting carbon nanotubes; enhancement-mode thin-film transistors; threshold voltage modulation
Cite as: Chen Z F, Li J Q, Li M, et al. Flexible printed three dimensional (3D) integrated carbon nanotube complementary metal oxide semiconductor (CMOS) thin film transistors and circuits. Sci China Inf Sci, 2024, 67: 192401, doi: 10.1007/s11432-023-3933-7
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Investigation and mitigation of Mott neuronal oscillation fluctuation in spiking neural network
Wu, Lindong; Wang, Zongwei; Bao, Lin; Shan, Linbo; Yu, Zhizhen; Yang, Yunfan; Zhang, Shuangjie; Bai, Guandong; Wang, Cuimei; Robertson, John; Wang, Yuan; Cai, Yimao; Huang, Ru
Sci China Inf Sci, 2024, 67(2): 122404
Keywords: Mott neuron; oscillation fluctuation; variation-aware Mott neuronal model; conversion-based spiking neural network; activation function boundary
Cite as: Wu L D, Wang Z W, Bao L, et al. Investigation and mitigation of Mott neuronal oscillation fluctuation in spiking neural network. Sci China Inf Sci, 2024, 67: 122404, doi: 10.1007/s11432-023-3745-y
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High precision current mirror circuit based on two-dimensional material transistors
Gao, Shiping; Pan, Chen; Su, Pincheng; Yangdong, Xing-Jian; Yu, Wentao; Zeng, Zhoujie; Shen, Yu; Shi, Jingwen; Cui, Yanwei; Wang, Pengfei; Yang, Yuekun; Wang, Cong; Cheng, Bing; Liang, Shi-Jun; Miao, Feng
Sci China Inf Sci, 2024, 67(8): 189405
Keywords: current mirror circuit; analog circuit; 2D material electrical device; field effect transistor; WSe2 transistor
Cite as: Gao S P, Pan C, Su P C, et al. High precision current mirror circuit based on two-dimensional material transistors. Sci China Inf Sci, 2024, 67: 189405, doi: 10.1007/s11432-024-4083-6
Special Topic: Silicon-compatible 2D Materials Technologies
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Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors
Yang, Qiyu; Luo, Zheng-Dong; Xiao, Fei; Zhang, Junpeng; Zhang, Dawei; Tan, Dongxin; Gan, Xuetao; Liu, Yan; Chu, Zhufei; Xia, Yinshui; Han, Genquan
Sci China Inf Sci, 2024, 67(6): 160405
Keywords: vdW heterostructure; non-volatile memory; vertical-transport transistor; ferroelectric field-effect transistor; memristive devices
Cite as: Yang Q Y, Luo Z-D, Xiao F, et al. Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors. Sci China Inf Sci, 2024, 67: 160405, doi: 10.1007/s11432-024-4004-9
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Ultrahigh thermal-stable p-type WSe2 transistors with silicon processing-compatible metal-semiconductor contacts
Huang, Junlin; Gao, Li; Chen, Zhangyi; Jia, Zeen; Lin, Yuyin; Hong, Mengyu; Yu, Huihui; Zhang, Xiankun; Zhang, Zheng; Zhang, Yue
Sci China Inf Sci, 2026, 69(3): 132402
Keywords: WSe2 transistors; p-type modulation; contact engineering; oxide layer intercalation; thermal stability
Cite as: Huang J L, Gao L, Chen Z Y, et al. Ultrahigh thermal-stable p-type WSe2 transistors with silicon processing-compatible metal-semiconductor contacts. Sci China Inf Sci, 2026, 69: 132402, doi: 10.1007/s11432-025-4698-1
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Keywords: biomimetic cell; self-healing; flexible pressure sensor; hierarchical microstructure; high sensitivity; wide linear measurement range
Cite as: Meng X Y, Tang H Y, Lv X Z, et al. Biomimetic cell in-situ self-healing PCL/CNT conductive composites for flexible pressure sensors with high sensitivity and wide linear measurement range. Sci China Inf Sci, 2026, 69: 122404, doi: 10.1007/s11432-025-4610-5
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Two-dimensional van der Waals high-speed photodetectors enhanced by surface and interface engineering
Yu, Yuanfang; Tang, Senyao; Yang, Linjie; Li, Quan; Cao, Fa; Ni, Zhenhua; Lu, Junpeng; Gao, Li
Sci China Inf Sci, 2026, 69(2): 121401
Keywords: two-dimensional materials; surface engineering; interface engineering; heterostructure; high-speed photodetection
Cite as: Yu Y F, Tang S Y, Yang L J, et al. Two-dimensional van der Waals high-speed photodetectors enhanced by surface and interface engineering. Sci China Inf Sci, 2026, 69: 121401, doi: 10.1007/s11432-025-4624-x
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Sliding-controllable on-off states in MAX3-based (M=Mn, Ni; A=Si, Ge; X=S, Se) van der Waals tunnel junctions
Tan, Jianing; Ge, Meng; Hu, Huamin; Li, Hai; Ouyang, Gang
Sci China Inf Sci, 2026, 69(1): 112402
Keywords: vdW tunnel junctions; sliding engineering; interface barrier modulation; transport properties; density functional theory
Cite as: Tan J N, Ge M, Hu H M, et al. Sliding-controllable on-off states in MAX3-based (M=Mn, Ni; A=Si, Ge; X=S, Se) van der Waals tunnel junctions. Sci China Inf Sci, 2026, 69: 112402, doi: 10.1007/s11432-025-4516-x
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Ambipolar MoS2 enabled through high-ε ferroelectric P(VDF-TrFE)
Diao, Zhaobiao; Wu, Shuaiqin; Chen, Yan; Wang, Lu; Liu, Chang; Wu, Binmin; Wang, Peng; Lin, Tie; Shen, Hong; Meng, Xiangjian; Wang, Xudong; Chu, Junhao; Wang, Jianlu
Sci China Inf Sci, 2026, 69(1): 112401
Keywords: p-type semiconductor; dielectric constant; ferroelectric modulation; MoS2; AFM
Cite as: Diao Z B, Wu S Q, Chen Y, et al. Ambipolar MoS2 enabled through high-ε ferroelectric P(VDF-TrFE). Sci China Inf Sci, 2026, 69: 112401, doi: 10.1007/s11432-025-4505-1
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Model compression and quantization optimization methods for memristive neural networks
Wang, Yu; Yan, Xiaobing; Shi, Tuo; Lyu, Bo; Qi, Yincheng; Liu, Ying; Xu, Jikang; Yang, Biao; Li, Pengfei
Sci China Inf Sci, 2025, 68(10): 209402
Keywords: memristor; network pruning; sparse neural networks; quantization weight; Bl regularization
Cite as: Wang Y, Yan X B, Shi T, et al. Model compression and quantization optimization methods for memristive neural networks. Sci China Inf Sci, 2025, 68: 209402, doi: 10.1007/s11432-024-4430-6
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Wafer-scale fabrication of monolayer MoS2 films for two-dimensional electronic devices via multitube atmospheric-pressure chemical vapor deposition
Cheng, Zixuan; Yang, Dingyi; Wang, Yong; Wu, Yizhang; Wu, Biao; Zhang, Jiateng; Liu, Huan; Zhang, Mingwen; Gan, Xuetao; Liu, Yan; Hao, Yue; Han, Genquan
Sci China Inf Sci, 2025, 68(10): 202405
Keywords: atmospheric pressure; chemical vapor deposition; wafer-scale MoS2; second harmonic generation; FeFETs
Cite as: Cheng Z X, Yang D Y, Wang Y, et al. Wafer-scale fabrication of monolayer MoS2 films for two-dimensional electronic devices via multitube atmospheric-pressure chemical vapor deposition. Sci China Inf Sci, 2025, 68: 202405, doi: 10.1007/s11432-025-4526-2
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Potential of boron nitride/diamond heterostructures for n- and p-type conduction
Li, Yao; Wang, Chenxu; Li, Qun; Zhang, Jinfeng; Su, Kai; Hu, Jichao; Lin, Tao; Ren, Zeyang; Zhu, Jiaduo; Zhang, Yachao; Hao, Yue
Sci China Inf Sci, 2025, 68(8): 189401
Keywords: boron nitride; diamond; heterostructure; p-type; n-type
Cite as: Li Y, Wang C X, Li Q, et al. Potential of boron nitride/diamond heterostructures for n- and p-type conduction. Sci China Inf Sci, 2025, 68: 189401, doi: 10.1007/s11432-024-4361-4
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Dielectric metasurface enhanced performance in multilayer WS2 pho- todetector
Zhao, Huijuan; Wang, Weiqi; Ding, Huanlin; Wang, Sumei; Tang, Zemin; Li, Shuhan; Wang, Jiaxuan; Wang, Yufan; Zhou, Qiyuan; Wang, Anran; Yu, Yuanfang; Gao, Li
Sci China Inf Sci, 2025, 68(7): 179403
Keywords: two dimensional materials; photodetectors; metasurface; light trapping; soft nanoimprinting
Cite as: Zhao H J, Wang W Q, Ding H L, et al. Dielectric metasurface enhanced performance in multilayer WS2 pho- todetector. Sci China Inf Sci, 2025, 68: 179403, doi: 10.1007/s11432-025-4362-7
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Stable α-CsPbI3 with extremely red emission for expanding the color gamut
Zhang, Yong; Wei, Xin; Gao, Lei; Zhao, Weijie; Sun, Changjiu; Wei, Junli; Yuan, Mingjian; Ni, Zhenhua; Lu, Junpeng; Liu, Hongwei
Sci China Inf Sci, 2024, 67(5): 152405
Keywords: all-inorganic perovskite; wide color gamut; LED; display; carrier recombination
Cite as: Zhang Y, Wei X, Gao L, et al. Stable α-CsPbI3 with extremely red emission for expanding the color gamut. Sci China Inf Sci, 2024, 67: 152405, doi: 10.1007/s11432-023-3944-3
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Gate regulated near-infrared photodetector utilizing interlayer excitons for MoS2/CrPS4 heterojunction
Xu, Guoliang; He, Chao; Shi, Donghong; Liu, Danmin; Deng, Wenjie; Li, Jingzhen; An, Xingtao; Zhang, Yongzhe
Sci China Inf Sci, 2024, 67(3): 139401
Keywords: heterostructure; two-dimensional materials; interlayer excitons; photodetector; gate tunable
Cite as: Xu G L, He C, Shi D H, et al. Gate regulated near-infrared photodetector utilizing interlayer excitons for MoS2/CrPS4 heterojunction. Sci China Inf Sci, 2024, 67: 139401, doi: 10.1007/s11432-023-3811-8
