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Keywords: mos2; 2d nems; resonators; laser interferometry; responsivity
Cite as: Zhu J K, Zhang P C, Yang R, et al. Analyzing electrostatic modulation of signal transduction efficiency in MoS2 nanoelectromechanical resonators with interferometric readout. Sci China Inf Sci, 2022, 65(2): 122409, doi: 10.1007/s11432-021-3297-x
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Recent progress in 2D van der Waals heterostructures: fabrication, properties, and applications
Wang, Zenghui; Xu, Bo; Pei, Shenghai; Zhu, Jiankai; Wen, Ting; Jiao, Chenyin; Li, Jing; Zhang, Maodi; Xia, Juan
Sci China Inf Sci, 2022, 65(11): 211401
Keywords: 2D materials; van der Waals heterostructure; interlayer coupling; stacking; layered nanostructures
Cite as: Wang Z H, Xu B, Pei S H, et al. Recent progress in 2D van der Waals heterostructures: fabrication, properties, and applications. Sci China Inf Sci, 2022, 65(11): 211401, doi: 10.1007/s11432-021-3432-6
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Toward practical gas sensing with rapid recovery semiconducting carbon nanotube film sensors
Liu, Fangfang; Xiao, Mengmeng; Ning, Yongkai; Zhou, Shaoyuan; He, Jianping; Lin, Yanxia; Zhang, Zhiyong
Sci China Inf Sci, 2022, 65(6): 162402
Keywords: carbon nanotube; gas sensor; thin-film transistors; rapid recovery
Cite as: Liu F F, Xiao M M, Ning Y K, et al. Toward practical gas sensing with rapid recovery semiconducting carbon nanotube film sensors. Sci China Inf Sci, 2022, 65(6): 162402, doi: 10.1007/s11432-021-3286-3
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Cited in SCI: 9
Keywords: spin orbit torque; spin currents; spin current gradient; magnetization switching; spin logic
Cite as: Li Y C, Zhang N, Wang K Y. Spin logic operations based on magnetization switching by asymmetric spin current. Sci China Inf Sci, 2022, 65(2): 122404, doi: 10.1007/s11432-020-3246-8
Special Topic: Two-Dimensional Materials and Device Applications
PROGRESS
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Cited in SCI: 6
From lab to fab: path forward for 2D material electronics
Ning, Hongkai; Yu, Zhihao; Li, Taotao; Shen, Haoliang; Long, Gen; Shi, Yi; Wang, Xinran
Sci China Inf Sci, 2023, 66(6): 160411
Keywords: two-dimensional materials; transition-metal dichalcogenides; equipment; integrated circuits; roadmap
Cite as: Ning H K, Yu Z H, Li T T, et al. From lab to fab: path forward for 2D material electronics. Sci China Inf Sci, 2023, 66(6): 160411, doi: 10.1007/s11432-023-3752-3
Special Topic: Two-Dimensional Materials and Device Applications
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Cited in SCI: 5
Two-dimensional materials-based integrated hardware
Peng, Zhuiri; Lin, Runfeng; Li, Zheng; Xu, Langlang; Yu, Xiangxiang; Huang, Xinyu; Shi, Wenhao; He, Xiao; Meng, Xiaohan; Tong, Lei; Miao, Xiangshui; Ye, Lei
Sci China Inf Sci, 2023, 66(6): 160401
Keywords: two-dimensional materials; integrated circuit; integrated sensor; integrated optoelectronics
Cite as: Peng Z R, Lin R F, Li Z, et al. Two-dimensional materials-based integrated hardware. Sci China Inf Sci, 2023, 66(6): 160401, doi: 10.1007/s11432-023-3744-2
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Mid-infrared plasmonic silicon quantum dot/HgCdTe photodetector with ultrahigh specific detectivity
Cui, Yueying; Tong, Zhouyu; Zhang, Xinlei; Wang, Wenhui; Zhao, Weiwei; Yu, Yuanfang; Pi, Xiaodong; Zhang, Jialin; Ni, Zhenhua
Sci China Inf Sci, 2023, 66(4): 142404
Keywords: doped silicon quantum dots; HgCdTe; localized surface plasmon resonance; hot-hole tunneling; mid-infrared photodetector
Cite as: Cui Y Y, Tong Z Y, Zhang X L, et al. Mid-infrared plasmonic silicon quantum dot/HgCdTe photodetector with ultrahigh specific detectivity. Sci China Inf Sci, 2023, 66(4): 142404, doi: 10.1007/s11432-022-3549-7
Special Topic: Two-Dimensional Materials and Device Applications
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Cited in SCI: 4
Keywords: memristor; switching mechanism; MoS2; 2D materials
Cite as: Tong W, Liu Y. Recent progress of layered memristors based on two-dimensional MoS2. Sci China Inf Sci, 2023, 66(6): 160402, doi: 10.1007/s11432-023-3751-y
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Cited in SCI: 4
Keywords: knowledge-based neural network; MOSFET; 2D material FETs; Monte Carlo simulations; circuit benchmark
Cite as: Qi G D, Chen X Y, Hu G X, et al. Knowledge-based neural network SPICE modeling for MOSFETs and its application on 2D material field-effect transistors. Sci China Inf Sci, 2023, 66(2): 122405, doi: 10.1007/s11432-021-3483-6
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Van der Waals heterostructure tunnel FET with potential modulation beyond junction region
Qin, Wenjing; Lv, Yawei; Xia, Zhen; Liao, Lei; Jiang, Changzhong
Sci China Inf Sci, 2022, 65(10): 209401
Keywords: van der Waals; heterostructure; tunnel FET; type-III band alignment; channel potential; density functional theory; Hamiltonian
Cite as: Qin W J, Lv Y W, Xia Z, et al. Van der Waals heterostructure tunnel FET with potential modulation beyond junction region. Sci China Inf Sci, 2022, 65(10): 209401, doi: 10.1007/s11432-021-3335-3
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Cited in SCI: 3
Keywords: 2D InSe Transistors; Ballistic; Ohmic-contact; 10 nm; More Moore
Cite as: Li H, Li Q H, Lu J. Ohmic-contact ballistic 2D InSe transistors: promising candidates for more Moore electronics. Sci China Inf Sci, 2024, 67(3): 137401, doi: 10.1007/s11432-023-3884-3
Special Topic: Two-Dimensional Materials and Device Applications
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Cited in SCI: 3
Keywords: two-dimensional materials; electromagnetic meta-structures; light field modulation; surface plasma polarisation; surface plasmon
Cite as: Zheng Z P, Huang Y J, Wu F, et al. Multidimensional modulation of light fields via a combination of two-dimensional materials and meta-structures. Sci China Inf Sci, 2023, 66(6): 160403, doi: 10.1007/s11432-023-3753-9
Special Topic: Two-Dimensional Materials and Device Applications
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Cited in SCI: 2
AtomGAN: unsupervised deep learning for fast and accurate defect detection of 2D materials at the atomic scale
Cheng, Danpeng; Sha, Wuxin; Xu, Zuo; Li, Shide; Yin, Zhigao; Lang, Yuling; Tang, Shun; Cao, Yuan-Cheng
Sci China Inf Sci, 2023, 66(6): 160410
Keywords: deep learning; generative adversarial network; defect detection; atomic resolution; 2D materials
Cite as: Cheng D P, Sha W X, Xu Z, et al. AtomGAN: unsupervised deep learning for fast and accurate defect detection of 2D materials at the atomic scale. Sci China Inf Sci, 2023, 66(6): 160410, doi: 10.1007/s11432-022-3757-x
Special Topic: Two-Dimensional Materials and Device Applications
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Keywords: 2D Bi2O2Se; thermal conductivity; oxygens defects; phonon scattering; mobility
Cite as: Yang F, Ng H K, Wu J, et al. Simultaneous optimization of phononic and electronic transport in two-dimensional Bi2O2Se by defect engineering. Sci China Inf Sci, 2023, 66(6): 160408, doi: 10.1007/s11432-023-3758-4
Special Topic: Two-Dimensional Materials and Device Applications
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Near-infrared optoelectronic synapses based on a Te/α-In2Se3 heterojunction for neuromorphic computing
Yan, Tao; Cai, Yuchen; Wang, Yanrong; Yang, Jia; Li, Shuhui; Zhan, Xueying; Wang, Fengmei; Cheng, Ruiqing; Wang, Feng; He, Jun; Wang, Zhenxing
Sci China Inf Sci, 2023, 66(6): 160404
Keywords: near infrared; phototransistor; two-dimensional ferroelectric semiconductor; artificial neural networks; optoelectronic synapses
Cite as: Yan T, Cai Y C, Wang Y R, et al. Near-infrared optoelectronic synapses based on a Te/α-In2Se3 heterojunction for neuromorphic computing. Sci China Inf Sci, 2023, 66(6): 160404, doi: 10.1007/s11432-022-3695-1
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Efficient charge transfer in WS2/WxMo1−xS2 heterostructure empowered by energy level hybridization
An, Xuhong; Zhang, Yehui; Yu, Yuanfang; Zhao, Weiwei; Yang, Yutian; Niu, Xianghong; Luo, Xuan; Lu, Junpeng; Wang, Jinlan; Ni, Zhenhua
Sci China Inf Sci, 2023, 66(2): 122404
Keywords: van der Waals heterostructure; band offset; hybridization strength; charge transfer; photoluminescence quenching
Cite as: An X H, Zhang Y H, Yu Y F, et al. Efficient charge transfer in WS2/WxMo1−xS2 heterostructure empowered by energy level hybridization. Sci China Inf Sci, 2023, 66(2): 122404, doi: 10.1007/s11432-022-3465-2
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Lead-free perovskites-based photonic synaptic devices with zero electric energy consumption
Hao, Dandan; Yang, Di; Liang, Haixia; Huang, Jia; Shan, Fukai
Sci China Inf Sci, 2024, 67(6): 162401
Keywords: photonic synaptic devices; lead-free perovskites; zero energy consumption; synaptic plasticity; Morse code
Cite as: Hao D D, Yang D, Liang H X, et al. Lead-free perovskites-based photonic synaptic devices with zero electric energy consumption. Sci China Inf Sci, 2024, 67(6): 162401, doi: 10.1007/s11432-023-3835-4
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Investigation and mitigation of Mott neuronal oscillation fluctuation in spiking neural network
Wu, Lindong; Wang, Zongwei; Bao, Lin; Shan, Linbo; Yu, Zhizhen; Yang, Yunfan; Zhang, Shuangjie; Bai, Guandong; Wang, Cuimei; Robertson, John; Wang, Yuan; Cai, Yimao; Huang, Ru
Sci China Inf Sci, 2024, 67(2): 122404
Keywords: Mott neuron; oscillation fluctuation; variation-aware Mott neuronal model; conversion-based spiking neural network; activation function boundary
Cite as: Wu L D, Wang Z W, Bao L, et al. Investigation and mitigation of Mott neuronal oscillation fluctuation in spiking neural network. Sci China Inf Sci, 2024, 67(2): 122404, doi: 10.1007/s11432-023-3745-y
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2.29-kV GaN-based double-channel Schottky barrier diodes on Si substrates with high VON uniformity
Huang, Ren; Zhang, Weihang; Zhang, Jincheng; Su, Chunxu; Liu, Xi; Fu, Liyu; Hao, Yue
Sci China Inf Sci, 2023, 66(6): 169404
Keywords: GaN; Schottky barrier diode; double channel; transport mechanism; thermal stability; high breakdown voltage
Cite as: Huang R, Zhang W H, Zhang J C, et al. 2.29-kV GaN-based double-channel Schottky barrier diodes on Si substrates with high VON uniformity. Sci China Inf Sci, 2023, 66(6): 169404, doi: 10.1007/s11432-022-3520-8
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Ultrahigh gain hot-electron tunneling transistor approaching the collection limit
Lin, Jun; Luo, Pengfei; Duan, Xinpei; Zhang, Wujun; Ma, Chao; Bu, Tong; Su, Wanhan; Jiang, Bei; Li, Guoli; Zou, Xuming; Yu, Ting; Liao, Lei; Liu, Xingqiang
Sci China Inf Sci, 2023, 66(6): 169403
Keywords: hot electron transistor; tunneling; collection factor; current gain; interface
Cite as: Lin J, Luo P F, Duan X P, et al. Ultrahigh gain hot-electron tunneling transistor approaching the collection limit. Sci China Inf Sci, 2023, 66(6): 169403, doi: 10.1007/s11432-022-3537-1
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Highly sensitive flexible strain sensor based on the two-dimensional semiconductor tellurium with a negative gauge factor
He, Jiarui; Qu, Yusong; Chen, Shengyao; Wang, Cong; Du, Lena; Du, Xiaoshan; Zheng, Yuanyuan; Zhao, Guozhong; Tian, He
Sci China Inf Sci, 2024, 67(7): 172401
Keywords: 2D semiconductor materials; 2D tellurium; flexible electronics; strain sensors; negative gauge factor; high sensitivity
Cite as: He J R, Qu Y S, Chen S Y, et al. Highly sensitive flexible strain sensor based on the two-dimensional semiconductor tellurium with a negative gauge factor. Sci China Inf Sci, 2024, 67(7): 172401, doi: 10.1007/s11432-023-3938-y
Special Topic: Silicon-compatible 2D Materials Technologies
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Hole mobility enhancement in monolayer WSe2 p-type transistors through molecular doping
Liu, Shiyuan; Xiong, Xiong; Wang, Xin; Shi, Xinhang; Huang, Ru; Wu, Yanqing
Sci China Inf Sci, 2024, 67(6): 160406
Keywords: CVD-grown WSe2; molecular doping; 4-NBD; p-type transistors; hole mobility
Cite as: Liu S Y, Xiong X, Wang X, et al. Hole mobility enhancement in monolayer WSe2 p-type transistors through molecular doping. Sci China Inf Sci, 2024, 67(6): 160406, doi: 10.1007/s11432-024-4032-6
Special Topic: Silicon-compatible 2D Materials Technologies
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Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors
Yang, Qiyu; Luo, Zheng-Dong; Xiao, Fei; Zhang, Junpeng; Zhang, Dawei; Tan, Dongxin; Gan, Xuetao; Liu, Yan; Chu, Zhufei; Xia, Yinshui; Han, Genquan
Sci China Inf Sci, 2024, 67(6): 160405
Keywords: vdW heterostructure; non-volatile memory; vertical-transport transistor; ferroelectric field-effect transistor; memristive devices
Cite as: Yang Q Y, Luo Z-D, Xiao F, et al. Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors. Sci China Inf Sci, 2024, 67(6): 160405, doi: 10.1007/s11432-024-4004-9
Special Topic: Silicon-compatible 2D Materials Technologies
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Heterogeneous integration of 2D materials on Si charge-coupled devices as optical memory
Bian, Zheng; Tian, Feng; Li, Zongwen; Su, Xiangwei; Zhang, Tianjiao; Miao, Jialei; Yu, Bin; Xu, Yang; Zhao, Yuda
Sci China Inf Sci, 2024, 67(6): 160404
Keywords: heterogeneous integration; charge-coupled device; floating gate; optical memory; molybdenum disulfide; lightly doped silicon
Cite as: Bian Z, Tian F, Li Z W, et al. Heterogeneous integration of 2D materials on Si charge-coupled devices as optical memory. Sci China Inf Sci, 2024, 67(6): 160404, doi: 10.1007/s11432-024-3993-5
Special Topic: Silicon-compatible 2D Materials Technologies
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Highly responsive broadband Si-based MoS2 phototransistor on high-k dielectric
Imran, Ali; He, Xin; Liu, Jiwei; Zhu, Qinghai; Sulaman, Muhammad; Xue, Fei; Xu, Mingsheng; Yang, Deren
Sci China Inf Sci, 2024, 67(6): 160403
Keywords: photogating; photoconduction; two-dimensional materials; high k dielectric; carrier scattering; phototransistor
Cite as: Imran A, He X, Liu J W, et al. Highly responsive broadband Si-based MoS2 phototransistor on high-k dielectric. Sci China Inf Sci, 2024, 67(6): 160403, doi: 10.1007/s11432-024-3994-4
Special Topic: Silicon-compatible 2D Materials Technologies
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Contact engineering for temperature stability improvement of Bi-contacted MoS2 field effect transistors
Liu, Zizheng; Zhang, Qing; Huang, Xiaohe; Liu, Chunsen; Zhou, Peng
Sci China Inf Sci, 2024, 67(6): 160402
Keywords: temperature stability; semimetallic bismuth contact; semimetallic antimony contact; MoS2 FETs; time stability
Cite as: Liu Z Z, Zhang Q, Huang X H, et al. Contact engineering for temperature stability improvement of Bi-contacted MoS2 field effect transistors. Sci China Inf Sci, 2024, 67(6): 160402, doi: 10.1007/s11432-023-3942-2
Special Topic: Silicon-compatible 2D Materials Technologies
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Keywords: two-dimensional materials; Si-based CMOS technologies; electronics and optoelectronics; heterogeneous integration; low-power
Cite as: Xu M S, Wang Y W, Liu J W, et al. Progress on the program of Si-compatible two-dimensional semiconductor materials and devices. Sci China Inf Sci, 2024, 67(6): 160401, doi: 10.1007/s11432-024-3986-8
Special Topic: Silicon-compatible 2D Materials Technologies
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Keywords: two-dimensional materials; 2D materials; information technology; production technology; standardization of characterization; microelectronic devices; optoelectronic devices; multi-functional integration
Cite as: Qiu H, Yu Z H, Zhao T G, et al. Two-dimensional materials for future information technology: status and prospects. Sci China Inf Sci, 2024, 67(6): 160400, doi: 10.1007/s11432-024-4033-8
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Stable α-CsPbI3 with extremely red emission for expanding the color gamut
Zhang, Yong; Wei, Xin; Gao, Lei; Zhao, Weijie; Sun, Changjiu; Wei, Junli; Yuan, Mingjian; Ni, Zhenhua; Lu, Junpeng; Liu, Hongwei
Sci China Inf Sci, 2024, 67(5): 152405
Keywords: all-inorganic perovskite; wide color gamut; LED; display; carrier recombination
Cite as: Zhang Y, Wei X, Gao L, et al. Stable α-CsPbI3 with extremely red emission for expanding the color gamut. Sci China Inf Sci, 2024, 67(5): 152405, doi: 10.1007/s11432-023-3944-3
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Layer-by-layer epitaxy growth of thickness-controllable two-dimensional tungsten disulfide
Liang, Jieyuan; Zou, Zixing; Liang, Junwu; Wang, Di; Wang, Biao; Chu, Anshi; Yi, Jiali; Zhang, Cheng; Fang, Lizhen; Zhang, Tian; Liu, Huawei; Zhu, Xiaoli; Li, Dong; Pan, Anlian
Sci China Inf Sci, 2024, 67(5): 152404
Keywords: WS2; thickness-controlled growth; chemical vapor deposition; additive; carbon
Cite as: Liang J Y, Zou Z X, Liang J W, et al. Layer-by-layer epitaxy growth of thickness-controllable two-dimensional tungsten disulfide. Sci China Inf Sci, 2024, 67(5): 152404, doi: 10.1007/s11432-023-3941-4
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Bioinspired sensing-memory-computing integrated vision systems: biomimetic mechanisms, design principles, and applications
Huang, Yujie; Tan, Yinlong; Kang, Yan; Chen, Yabo; Tang, Yuhua; Jiang, Tian
Sci China Inf Sci, 2024, 67(5): 151401
Keywords: sensing-memory-computing architecture; neuromorphic computing; retinomorphic device; image recognition; visual system
Cite as: Huang Y J, Tan Y L, Kang Y, et al. Bioinspired sensing-memory-computing integrated vision systems: biomimetic mechanisms, design principles, and applications. Sci China Inf Sci, 2024, 67(5): 151401, doi: 10.1007/s11432-023-3888-0
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Gate regulated near-infrared photodetector utilizing interlayer excitons for MoS2/CrPS4 heterojunction
Xu, Guoliang; He, Chao; Shi, Donghong; Liu, Danmin; Deng, Wenjie; Li, Jingzhen; An, Xingtao; Zhang, Yongzhe
Sci China Inf Sci, 2024, 67(3): 139401
Keywords: heterostructure; two-dimensional materials; interlayer excitons; photodetector; gate tunable
Cite as: Xu G L, He C, Shi D H, et al. Gate regulated near-infrared photodetector utilizing interlayer excitons for MoS2/CrPS4 heterojunction. Sci China Inf Sci, 2024, 67(3): 139401, doi: 10.1007/s11432-023-3811-8
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Polarity tunable complementary logic circuits
Pan, Chen; Shi, Jingwen; Wang, Pengfei; Wang, Shuang; Wang, Cong; Cheng, Bin; Liang, Shi-Jun; Miao, Feng
Sci China Inf Sci, 2023, 66(12): 229401
Keywords: splitting-gate WSe2 transistor; ambipolar; 2D materials-based electronics; logic circuit; polarity tunable complementary circuit
Cite as: Pan C, Shi J W, Wang P F, et al. Polarity tunable complementary logic circuits. Sci China Inf Sci, 2023, 66(12): 229401, doi: 10.1007/s11432-022-3621-0
Special Topic: Two-Dimensional Materials and Device Applications
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Bolstering functionality in multilayer and bilayer WS2 via focused laser micro-engraving
Chan, Si Min; Poh, Eng Tuan; Leong, Jin Feng; Goh, Kuan Eng Johnson; Sow, Chorng Haur
Sci China Inf Sci, 2023, 66(6): 160409
Keywords: WS2 monolayer micro-patterning; focused laser; sonication lift-off
Cite as: Chan S M, Poh E T, Leong J F, et al. Bolstering functionality in multilayer and bilayer WS2 via focused laser micro-engraving. Sci China Inf Sci, 2023, 66(6): 160409, doi: 10.1007/s11432-023-3764-7
Special Topic: Two-Dimensional Materials and Device Applications
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Growth of uniformly doped black phosphorus films through versatile atomic substitution
Chen, Cheng; Lu, Yang; Li, Chang; Hou, Xingang; Wang, Yongjie; Zhang, Junrong; Wang, Junyong; Zhang, Kai
Sci China Inf Sci, 2023, 66(6): 160407
Keywords: black phosphorus; dope; vapor growth; thin film; two-dimensional materials
Cite as: Chen C, Lu Y, Li C, et al. Growth of uniformly doped black phosphorus films through versatile atomic substitution. Sci China Inf Sci, 2023, 66(6): 160407, doi: 10.1007/s11432-023-3762-9
Special Topic: Two-Dimensional Materials and Device Applications
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Selective enriching of trionic emission in a WS2-ZnO hybrid through type-II band alignment
Leong, Jin Feng; Lim, Kim Yong; Wu, Xiao; Xu, Qinghua; Sow, Chorng Haur; Poh, Eng Tuan
Sci China Inf Sci, 2023, 66(6): 160405
Keywords: heterostructure; trions; type-II band alignment
Cite as: Leong J F, Lim K Y, Wu X, et al. Selective enriching of trionic emission in a WS2-ZnO hybrid through type-II band alignment. Sci China Inf Sci, 2023, 66(6): 160405, doi: 10.1007/s11432-022-3719-4
