Vol. 59, No. 6, 2016 Cover Contents

Special Focus on Advanced Microelectronics Technology
EDITORIAL Website SpringerLink Google Scholar Cited in SCI: 0

Special focus on advanced microelectronics technology
Huang, Ru; Iwai, Hiroshi; Claeys, Cor; Deleonibus, Simon; Wang, Runsheng
Sci China Inf Sci, 2016, 59(6): 060401
Cite as: Huang R, Iwai H, Claeys C, et al. Special focus on advanced microelectronics technology. Sci China Inf Sci, 2016, 59(6): 060401, doi: 10.1007/s11432-016-5564-2

Special Focus on Advanced Microelectronics Technology
REVIEW Website SpringerLink Google Scholar Cited in SCI: 12

Looking into the future of Nanoelectronics in the Diversification Efficient Era
Deleonibus, Simon
Sci China Inf Sci, 2016, 59(6): 061401
Keywords: CMOS; thin films; heterogeneous integration; NEMS; 3D integration; sequential; parallel; zero intrinsic variability; zero power system
Cite as: Deleonibus S. Looking into the future of Nanoelectronics in the Diversification Efficient Era. Sci China Inf Sci, 2016, 59(6): 061401, doi: 10.1007/s11432-016-5567-z

Special Focus on Advanced Microelectronics Technology
REVIEW Website SpringerLink Google Scholar Cited in SCI: 12

Fully depleted SOI (FDSOI) technology
Cheng, Kangguo; Khakifirooz, Ali
Sci China Inf Sci, 2016, 59(6): 061402
Keywords: FDSOI; design; foundry; variability; low power; strain engineering; IoT
Cite as: Cheng K G, Khakifirooz A. Fully depleted SOI (FDSOI) technology. Sci China Inf Sci, 2016, 59(6): 061402, doi: 10.1007/s11432-016-5561-5

Special Focus on Advanced Microelectronics Technology
REVIEW Website SpringerLink Google Scholar Cited in SCI: 18

3D resistive RAM cell design for high-density storage class memory-a review
Hudec, Boris; Hsu, Chung-Wei; Wang, I-Ting; Lai, Wei-Li; Chang, Che-Chia; Wang, Taifang; Frohlich, Karol; Ho, Chia-Hua; Lin, Chen-Hsi; Hou, Tuo-Hung
Sci China Inf Sci, 2016, 59(6): 061403
Keywords: RRAM; ReRAM; resistive switching; crossbar; cross-point; storage class memory; 3D integration; atomic layer deposition; selector
Cite as: Hudec B, Hsu C-W, Wang I-T, et al. 3D resistive RAM cell design for high-density storage class memory-a review. Sci China Inf Sci, 2016, 59(6): 061403, doi: 10.1007/s11432-016-5566-0

Special Focus on Advanced Microelectronics Technology
REVIEW Website SpringerLink Google Scholar Cited in SCI: 23

Synaptic electronics and neuromorphic computing
Upadhyay, Navnidhi K.; Joshi, Saumil; Yang, J. Joshua
Sci China Inf Sci, 2016, 59(6): 061404
Keywords: memristors; neuromorphic engineering; RRAM; synapses; synaptic devices
Cite as: Upadhyay N K, Joshi S, Yang J J. Synaptic electronics and neuromorphic computing. Sci China Inf Sci, 2016, 59(6): 061404, doi: 10.1007/s11432-016-5565-1

Special Focus on Advanced Microelectronics Technology
REVIEW Website SpringerLink Google Scholar Cited in SCI: 4

Development of two-dimensional materials for electronic applications
Li, Xuefei; Gao, Tingting; Wu, Yanqing
Sci China Inf Sci, 2016, 59(6): 061405
Keywords: two-dimensional materials; transistors; dielectrics; molybdenum disulfide; black phosphorus
Cite as: Li X F, Gao T T, Wu Y Q. Development of two-dimensional materials for electronic applications. Sci China Inf Sci, 2016, 59(6): 061405, doi: 10.1007/s11432-016-5559-z

Special Focus on Advanced Microelectronics Technology
REVIEW Website SpringerLink Google Scholar Cited in SCI: 18

Design for manufacturability and reliability in extreme-scaling VLSI
Yu, Bei; Xu, Xiaoqing; Roy, Subhendu; Lin, Yibo; Ou, Jiaojiao; Pan, David Z.
Sci China Inf Sci, 2016, 59(6): 061406
Keywords: design for manufacturability; design for reliability; VLSI CAD
Cite as: Yu B, Xu X Q, Roy S, et al. Design for manufacturability and reliability in extreme-scaling VLSI. Sci China Inf Sci, 2016, 59(6): 061406, doi: 10.1007/s11432-016-5560-6