Special Topic: Advanced Optoelectronics Based on Two-Dimensional Materials
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Advances in machine vision based on two-dimensional photodetectors: device engineering and computational intelligence
Li J X, Tang X J, Zhang E E, et al
Sci China Inf Sci, 2026, 69(7): 170401
Keywords: two-dimensional materials; photodetectors; machine vision; multidimensional optical sensing; computational intelligence
Cite as: Li J X, Tang X J, Zhang E E, et al. Advances in machine vision based on two-dimensional photodetectors: device engineering and computational intelligence. Sci China Inf Sci, 2026, 69: 170401, doi: 10.1007/s11432-025-4964-1

Special Topic: Advanced Optoelectronics Based on Two-Dimensional Materials
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Mechanical modulation of optical properties in 2D materials
Zhang, Zejuan; Pei, Shenghai; Wang, Luming; Yang, Lijuan; Huang, Ming; Xia, Juan; Wang, Zenghui
Sci China Inf Sci, 2026, 69(7): 170402
Keywords: 2D materials; bandgap modulation; phonon dynamics; optical properties; strain engineering
Cite as: Zhang Z J, Pei S H, Wang L M, et al. Mechanical modulation of optical properties in 2D materials. Sci China Inf Sci, 2026, 69: 170402, doi: 10.1007/s11432-025-4931-2

Special Topic: Advanced Optoelectronics Based on Two-Dimensional Materials
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Strong optical emission regulated by exciton state in two-dimensional organic molecular crystals
Yang Y T, Zheng T, Zhao W W, et al
Sci China Inf Sci, 2026, 69(7): 170403
Keywords: two-dimensional materials; organic crystal; aggregation; exciton state; superradiance
Cite as: Yang Y T, Zheng T, Zhao W W, et al. Strong optical emission regulated by exciton state in two-dimensional organic molecular crystals. Sci China Inf Sci, 2026, 69: 170403, doi: 10.1007/s11432-025-4889-4

Special Topic: Advanced Optoelectronics Based on Two-Dimensional Materials
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Asymmetric WSe2 reconfigurable devices for logic-in-memory computing: contact barrier engineering and floating gate-controlled operation
Liu W C, Shen X, GUO J Z, et al
Sci China Inf Sci, 2026, 69(7): 170404
Keywords: reconfigurable transistor; logic-in-memory; floating gate; asymmetric; contact barrier engineering
Cite as: Liu W C, Shen X, GUO J Z, et al. Asymmetric WSe2 reconfigurable devices for logic-in-memory computing: contact barrier engineering and floating gate-controlled operation. Sci China Inf Sci, 2026, 69: 170404, doi: 10.1007/s11432-025-4954-6

Special Topic: Advanced Optoelectronics Based on Two-Dimensional Materials
RESEARCH PAPER Supplementary Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Mechanism of photocarrier transport in vacuum ultraviolet photodetector based on hexagonal boron nitride nanosheets
Fang, Wannian; Li, Qiang; Chen, Ransheng; Chen, Youwei; Li, Jiaxing; Liu, Haifeng; Lin, Ziyan; Ning, Jing; Hao, Yue
Sci China Inf Sci, 2026, 69(7): 170405
Keywords: hexagonal boron nitride; self-assembly; vacuum ultraviolet photodetector; first-principles calculations; photocarrier transport
Cite as: Fang W N, Li Q, Chen R S, et al. Mechanism of photocarrier transport in vacuum ultraviolet photodetector based on hexagonal boron nitride nanosheets. Sci China Inf Sci, 2026, 69: 170405, doi: 10.1007/s11432-026-4966-8

Special Topic: Advanced Optoelectronics Based on Two-Dimensional Materials
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A platform of MoS2/4H-SiC heterostructure photonic synapses for low-power neuromorphic machine vision
Zhang G T, Sun R Y, Gong Y N, et al
Sci China Inf Sci, 2026, 69(7): 170406
Keywords: MoS2/4H-SiC heterostructure; neuromorphic devices; biological synapses; non-volatile long-term memory; handwritten digit recognition
Cite as: Zhang G T, Sun R Y, Gong Y N, et al. A platform of MoS2/4H-SiC heterostructure photonic synapses for low-power neuromorphic machine vision. Sci China Inf Sci, 2026, 69: 170406, doi: 10.1007/s11432-026-4987-2

Special Topic: Advanced Optoelectronics Based on Two-Dimensional Materials
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From wafer-scale growth to 3D integration: 2D WSe2 pMOS for next-generation
Jiang Y, He G M, Zhao B
Sci China Inf Sci, 2026, 69(7): 170407
Keywords: WSe2; p-type semiconductor; wafer-scale growth; pMOS devices; monolithic 3D integration
Cite as: Jiang Y, He G M, Zhao B. From wafer-scale growth to 3D integration: 2D WSe2 pMOS for next-generation. Sci China Inf Sci, 2026, 69: 170407, doi: 10.1007/s11432-026-4983-6