Special Focus on Two-Dimensional Materials and Device Applications

Special Focus on Two-Dimensional Materials and Device Applications
REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 13

Filling the gap: thermal properties and device applications of graphene
Wu, Rui; Zhu, Rui-Zhi; Zhao, Shi-Hui; Zhang, Gang; Tian, He; Ren, Tian-Ling
Sci China Inf Sci, 2021, 64(4): 140401

Keywords: graphene; thermal properties; device application; thermal conductivity; 2d material

Cite as: Wu R, Zhu R-Z, Zhao S-H, et al. Filling the gap: thermal properties and device applications of graphene. Sci China Inf Sci, 2021, 64(4): 140401, doi: 10.1007/s11432-020-3151-5

Special Focus on Two-Dimensional Materials and Device Applications
REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 51

Properties and photodetector applications of two-dimensional black arsenic phosphorus and black phosphorus
Han, Ruyue; Feng, Shun; Sun, Dong-Ming; Cheng, Hui-Ming
Sci China Inf Sci, 2021, 64(4): 140402

Keywords: black arsenic phosphorus; crystal structure; optical property; electrical property; photodetector

Cite as: Han R Y, Feng S, Sun D-M, et al. Properties and photodetector applications of two-dimensional black arsenic phosphorus and black phosphorus. Sci China Inf Sci, 2021, 64(4): 140402, doi: 10.1007/s11432-020-3172-1

Special Focus on Two-Dimensional Materials and Device Applications
RESEARCH PAPER Video Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 7

Efficient graphene in-plane homogeneous p-n-p junction based infrared photodetectors with low dark current
An, Junru; Sun, Tian; Wang, Bin; Xu, Jianlong; Li, Shaojuan
Sci China Inf Sci, 2021, 64(4): 140403

Keywords: infrared photodetector; graphene; p-n-p junction; dark current; photoresponse

Cite as: An J R, Sun T, Wang B, et al. Efficient graphene in-plane homogeneous p-n-p junction based infrared photodetectors with low dark current. Sci China Inf Sci, 2021, 64(4): 140403, doi: 10.1007/s11432-020-3179-9

Special Focus on Two-Dimensional Materials and Device Applications
RESEARCH PAPER Supplementary Video Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 41

Bi2O2Se/BP van der Waals heterojunction for high performance broadband photodetector
Liu, Xing; Wang, Wenhui; Yang, Fang; Feng, Shaopeng; Hu, Zhenliang; Lu, Junpeng; Ni, Zhenhua
Sci China Inf Sci, 2021, 64(4): 140404

Keywords: bi2o2se; bp; van der waals heterojunction; broadband photodetector; low dark current; narrow bandgap

Cite as: Liu X, Wang W H, Yang F, et al. Bi2O2Se/BP van der Waals heterojunction for high performance broadband photodetector. Sci China Inf Sci, 2021, 64(4): 140404, doi: 10.1007/s11432-020-3101-1

Special Focus on Two-Dimensional Materials and Device Applications
RESEARCH PAPER Video Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 6

Optical emission enhancement of bent InSe thin films
Xie, Jiahao; Zhang, Lijun
Sci China Inf Sci, 2021, 64(4): 140405

Keywords: inse; enhanced luminescence; 2d semiconductor; optical transition; optical anisotropy

Cite as: Xie J H, Zhang L J. Optical emission enhancement of bent InSe thin films. Sci China Inf Sci, 2021, 64(4): 140405, doi: 10.1007/s11432-020-3149-2

Special Focus on Two-Dimensional Materials and Device Applications
RESEARCH PAPER Video Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 8

Raman spectra evidence for the covalent-like quasi-bonding between exfoliated MoS2 and Au films
Huang, Xinyu; Zhang, Lei; Liu, Liwei; Qin, Yang; Fu, Qiang; Wu, Qiong; Yang, Rong; Lv, Jun-Peng; Ni, Zhenhua; Liu, Lei; Ji, Wei; Wang, Yeliang; Zhou, Xingjiang; Huang, Yuan
Sci China Inf Sci, 2021, 64(4): 140406

Keywords: mos2; raman spectroscopy; gold-enhanced mechanical exfoliation; low-frequency raman modes; covalent-like quasi-bonding

Cite as: Huang X Y, Zhang L, Liu L W, et al. Raman spectra evidence for the covalent-like quasi-bonding between exfoliated MoS2 and Au films. Sci China Inf Sci, 2021, 64(4): 140406, doi: 10.1007/s11432-020-3173-9

Special Focus on Two-Dimensional Materials and Device Applications
RESEARCH PAPER Supplementary Video Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 12

Interface engineering of ferroelectric-gated MoS2 phototransistor
Wu, Shuaiqin; Wang, Xudong; Jiang, Wei; Tu, Luqi; Chen, Yan; Liu, Jingjing; Lin, Tie; Shen, Hong; Ge, Jun; Hu, Weida; Meng, Xiangjian; Wang, Jianlu; Chu, Junhao
Sci China Inf Sci, 2021, 64(4): 140407

Keywords: 2d materials; ferroelectrics; mos2 phototransistors; h-bn; interface engineering

Cite as: Wu S Q, Wang X D, Jiang W, et al. Interface engineering of ferroelectric-gated MoS2 phototransistor. Sci China Inf Sci, 2021, 64(4): 140407, doi: 10.1007/s11432-020-3180-5

Special Focus on Two-Dimensional Materials and Device Applications
LETTER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 3

A compact model for transition metal dichalcogenide field effect transistors with effects of interface traps
Xu, Yifei; Li, Weisheng; Fan, Dongxu; Shi, Yi; Qiu, Hao; Wang, Xinran
Sci China Inf Sci, 2021, 64(4): 140408

Keywords: compact model; field effect transistor; transition metal dichalcogenide; mos2; interface traps

Cite as: Xu Y F, Li W S, Fan D X, et al. A compact model for transition metal dichalcogenide field effect transistors with effects of interface traps. Sci China Inf Sci, 2021, 64(4): 140408, doi: 10.1007/s11432-020-3155-7