Vol. 60, No. 12, 2017 Cover Contents

Special Focus on Reliability of Micro- and Nano-Electronic Devices in Harsh Environment
HIGHLIGHT Website SpringerLink Google Scholar Cited in SCI: 10

Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor
Xu, Yannan; Bi, Jinshun; Xu, Gaobo; Xi, Kai; Li, Bo; Liu, Ming
Sci China Inf Sci, 2017, 60(12): 120401
Keywords: HfO2 dielectric; TID effect; annealing effect; trapping charge; effective trapping efficiency
Cite as: Xu Y N, Bi J S, Xu G B, et al. Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor. Sci China Inf Sci, 2017, 60(12): 120401, doi: 10.1007/s11432-017-9239-5

Special Focus on Reliability of Micro- and Nano-Electronic Devices in Harsh Environment
HIGHLIGHT Website SpringerLink Google Scholar Cited in SCI: 4

Research on proton radiation effects on CMOS image sensors with experimental and particle transport simulation methods
Xue, Yttanyuan; Wang, Zujun; Liu, Minbo; He, Baoping; Yao, Zhibin; Sheng, Jiangkun; Ma, Wuying; Dong, Guantao; Jin, Junshan
Sci China Inf Sci, 2017, 60(12): 120402
Keywords: CMOS image sensor; proton; radiation effects; dark signal; dark signal non-uniform
Cite as: Xue Y Y, Wang Z J, Liu M B, et al. Research on proton radiation effects on CMOS image sensors with experimental and particle transport simulation methods. Sci China Inf Sci, 2017, 60(12): 120402, doi: 10.1007/s11432-017-9250-7

Special Focus on Reliability of Micro- and Nano-Electronic Devices in Harsh Environment
HIGHLIGHT Website SpringerLink Google Scholar Supplementary Cited in SCI: 6

1-MeV electron irradiation effects on InGaAsP/InGaAs double-junction solar cell and its component subcells
Zhao, Xiaofan; Heini, Maliya; Sailai, Momin; Aierken, Abuduwayiti; Guo, Qi; Li, Yudong; Lu, Shulong; Dai, Pan; Wu, Yuanyuan; Tan, Ming
Sci China Inf Sci, 2017, 60(12): 120403
Keywords: solar cell; irradiation effects; electron; displacement damage dose; degradation
Cite as: Zhao X F, Heini M, Sailai M, et al. 1-MeV electron irradiation effects on InGaAsP/InGaAs double-junction solar cell and its component subcells. Sci China Inf Sci, 2017, 60(12): 120403, doi: 10.1007/s11432-017-9248-2

Special Focus on Reliability of Micro- and Nano-Electronic Devices in Harsh Environment
HIGHLIGHT Website SpringerLink Google Scholar Cited in SCI: 3

Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor
Zhang, Jinxin; Guo, Hongxia; Zhang, Fengqi; He, Chaohui; Li, Pei; Yan, Yunyi; Wang, Hui; Zhang, Linxia
Sci China Inf Sci, 2017, 60(12): 120404
Keywords: SiGe HBT; single-event transient; heavy ion micro-beam test; simulation; radiation effect
Cite as: Zhang J X, Guo H X, Zhang F Q, et al. Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor. Sci China Inf Sci, 2017, 60(12): 120404, doi: 10.1007/s11432-017-9249-6

Special Focus on Reliability of Micro- and Nano-Electronic Devices in Harsh Environment
HIGHLIGHT Website SpringerLink Google Scholar Cited in SCI: 1

High energy proton and heavy ion induced single event transient in 65-nm CMOS technology
Liu, Jiaqi; Zhao, Yuanfu; Wang, Liang; Wang, Dan; Zheng, Hongchao; Chen, Maoxin; Shu, Lei; Li, Tongde; Li, Dongqiang; Guo, Wei
Sci China Inf Sci, 2017, 60(12): 120405
Keywords: Single Event Transient; 65nm; heavy ion; high energy proton; pulse width
Cite as: Liu J Q, Zhao Y F, Wang L, et al. High energy proton and heavy ion induced single event transient in 65-nm CMOS technology. Sci China Inf Sci, 2017, 60(12): 120405, doi: 10.1007/s11432-017-9254-2