信息器件 新材料 REVIEW Website SpringerLink Google Scholar Cited in SCI: 7

Graphene-based vertical thin film transistors
Liu, Liting; Liu, Yuan; Duan, Xiangfeng
Sci China Inf Sci, 2020, 63(10): 201401
Keywords: graphene electrode; vertical transistors; thin film transistors; van der waals heterostructures
Cite as: Liu L T, Liu Y, Duan X F. Graphene-based vertical thin film transistors. Sci China Inf Sci, 2020, 63(10): 201401, doi: 10.1007/s11432-020-2806-8

Special Focus on Two-Dimensional Materials and Device Applications
信息器件 新材料 RESEARCH PAPER Website SpringerLink Google Scholar Supplementary Homepage Cited in SCI: 5

Bi2O2Se/BP van der Waals heterojunction for high performance broadband photodetector
Liu, Xing; Wang, Wenhui; Yang, Fang; Feng, Shaopeng; Hu, Zhenliang; Lu, Junpeng; Ni, Zhenhua
Sci China Inf Sci, 2021, 64(4): 140404
Keywords: bi2o2se; bp; van der waals heterojunction; broadband photodetector; low dark current; narrow bandgap
Cite as: Liu X, Wang W H, Yang F, et al. Bi2O2Se/BP van der Waals heterojunction for high performance broadband photodetector. Sci China Inf Sci, 2021, 64(4): 140404, doi: 10.1007/s11432-020-3101-1

信息器件 新材料 LETTER Website SpringerLink Google Scholar Cited in SCI: 4

Complementary tunneling transistors based on WSe2/SnS2 van der Waals heterostructure
Jia, Rundong; Chen, Liang; Huang, Qianqian; Huang, Ru
Sci China Inf Sci, 2020, 63(4): 149401
Keywords: 2d materials; van der waals heterostructure; tunnel barrier height; complementary tfet; on/off ratio
Cite as: Jia R D, Chen L, Huang Q Q, et al. Complementary tunneling transistors based on WSe2/SnS2 van der Waals heterostructure. Sci China Inf Sci, 2020, 63(4): 149401, doi: 10.1007/s11432-019-9872-x

Special Focus on Two-Dimensional Materials and Device Applications
信息器件 新材料 REVIEW Website SpringerLink Google Scholar Cited in SCI: 4

Properties and photodetector applications of two-dimensional black arsenic phosphorus and black phosphorus
Han, Ruyue; Feng, Shun; Sun, Dong-Ming; Cheng, Hui-Ming
Sci China Inf Sci, 2021, 64(4): 140402
Keywords: black arsenic phosphorus; crystal structure; optical property; electrical property; photodetector
Cite as: Han R Y, Feng S, Sun D-M, et al. Properties and photodetector applications of two-dimensional black arsenic phosphorus and black phosphorus. Sci China Inf Sci, 2021, 64(4): 140402, doi: 10.1007/s11432-020-3172-1

Special Focus on Two-Dimensional Materials and Device Applications
信息器件 新材料 LETTER Website SpringerLink Google Scholar Cited in SCI: 2

A compact model for transition metal dichalcogenide field effect transistors with effects of interface traps
Xu, Yifei; Li, Weisheng; Fan, Dongxu; Shi, Yi; Qiu, Hao; Wang, Xinran
Sci China Inf Sci, 2021, 64(4): 140408
Keywords: compact model; field effect transistor; transition metal dichalcogenide; mos2; interface traps
Cite as: Xu Y F, Li W S, Fan D X, et al. A compact model for transition metal dichalcogenide field effect transistors with effects of interface traps. Sci China Inf Sci, 2021, 64(4): 140408, doi: 10.1007/s11432-020-3155-7

Special Focus on Two-Dimensional Materials and Device Applications
信息器件 新材料 REVIEW Website SpringerLink Google Scholar Cited in SCI: 1

Filling the gap: thermal properties and device applications of graphene
Wu, Rui; Zhu, Rui-Zhi; Zhao, Shi-Hui; Zhang, Gang; Tian, He; Ren, Tian-Ling
Sci China Inf Sci, 2021, 64(4): 140401
Keywords: graphene; thermal properties; device application; thermal conductivity; 2d material
Cite as: Wu R, Zhu R-Z, Zhao S-H, et al. Filling the gap: thermal properties and device applications of graphene. Sci China Inf Sci, 2021, 64(4): 140401, doi: 10.1007/s11432-020-3151-5

Special Focus on Two-Dimensional Materials and Device Applications
信息器件 新材料 RESEARCH PAPER Website SpringerLink Google Scholar Homepage Cited in SCI: 1

Optical emission enhancement of bent InSe thin films
Xie, Jiahao; Zhang, Lijun
Sci China Inf Sci, 2021, 64(4): 140405
Keywords: inse; enhanced luminescence; 2d semiconductor; optical transition; optical anisotropy
Cite as: Xie J H, Zhang L J. Optical emission enhancement of bent InSe thin films. Sci China Inf Sci, 2021, 64(4): 140405, doi: 10.1007/s11432-020-3149-2

Special Focus on Two-Dimensional Materials and Device Applications
信息器件 新材料 RESEARCH PAPER Website SpringerLink Google Scholar Supplementary Homepage Cited in SCI: 1

Interface engineering of ferroelectric-gated MoS2 phototransistor
Wu, Shuaiqin; Wang, Xudong; Jiang, Wei; Tu, Luqi; Chen, Yan; Liu, Jingjing; Lin, Tie; Shen, Hong; Ge, Jun; Hu, Weida; Meng, Xiangjian; Wang, Jianlu; Chu, Junhao
Sci China Inf Sci, 2021, 64(4): 140407
Keywords: 2d materials; ferroelectrics; mos2 phototransistors; h-bn; interface engineering
Cite as: Wu S Q, Wang X D, Jiang W, et al. Interface engineering of ferroelectric-gated MoS2 phototransistor. Sci China Inf Sci, 2021, 64(4): 140407, doi: 10.1007/s11432-020-3180-5

Special Focus on Two-Dimensional Materials and Device Applications
信息器件 新材料 RESEARCH PAPER Website SpringerLink Google Scholar Homepage Cited in SCI: 0

Efficient graphene in-plane homogeneous p-n-p junction based infrared photodetectors with low dark current
An, Junru; Sun, Tian; Wang, Bin; Xu, Jianlong; Li, Shaojuan
Sci China Inf Sci, 2021, 64(4): 140403
Keywords: infrared photodetector; graphene; p-n-p junction; dark current; photoresponse
Cite as: An J R, Sun T, Wang B, et al. Efficient graphene in-plane homogeneous p-n-p junction based infrared photodetectors with low dark current. Sci China Inf Sci, 2021, 64(4): 140403, doi: 10.1007/s11432-020-3179-9

Special Focus on Two-Dimensional Materials and Device Applications
信息器件 新材料 RESEARCH PAPER Website SpringerLink Google Scholar Homepage Cited in SCI: 0

Raman spectra evidence for the covalent-like quasi-bonding between exfoliated MoS2 and Au films
Huang, Xinyu; Zhang, Lei; Liu, Liwei; Qin, Yang; Fu, Qiang; Wu, Qiong; Yang, Rong; Lv, Jun-Peng; Ni, Zhenhua; Liu, Lei; Ji, Wei; Wang, Yeliang; Zhou, Xingjiang; Huang, Yuan
Sci China Inf Sci, 2021, 64(4): 140406
Keywords: mos2; raman spectroscopy; gold-enhanced mechanical exfoliation; low-frequency raman modes; covalent-like quasi-bonding
Cite as: Huang X Y, Zhang L, Liu L W, et al. Raman spectra evidence for the covalent-like quasi-bonding between exfoliated MoS2 and Au films. Sci China Inf Sci, 2021, 64(4): 140406, doi: 10.1007/s11432-020-3173-9

信息器件 新材料 REVIEW Website SpringerLink Google Scholar Cited in SCI: 0

Carbon nanotube-based CMOS transistors and integrated circuits
Xie, Yunong; Zhang, Zhiyong
Sci China Inf Sci, 2021, 64(10): 201402
Keywords: carbon nanotube; transistor; integrated circuit; scaling; nanoelectronics
Cite as: Xie Y N, Zhang Z Y. Carbon nanotube-based CMOS transistors and integrated circuits. Sci China Inf Sci, 2021, 64(10): 201402, doi: 10.1007/s11432-021-3271-8

信息器件 新材料 RESEARCH PAPER Website SpringerLink Google Scholar Supplementary Cited in SCI: 0

Spin logic operations based on magnetization switching by asymmetric spin current
Li, Yucai; Zhang, Nan; Wang, Kaiyou
Sci China Inf Sci, 2022, 65(2): 122404
Keywords: spin orbit torque; spin currents; spin current gradient; magnetization switching; spin logic
Cite as: Li Y C, Zhang N, Wang K Y. Spin logic operations based on magnetization switching by asymmetric spin current. Sci China Inf Sci, 2022, 65(2): 122404, doi: 10.1007/s11432-020-3246-8