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Keywords: black arsenic phosphorus; crystal structure; optical property; electrical property; photodetector
Cite as: Han R Y, Feng S, Sun D-M, et al. Properties and photodetector applications of two-dimensional black arsenic phosphorus and black phosphorus. Sci China Inf Sci, 2021, 64(4): 140402, doi: 10.1007/s11432-020-3172-1
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Bi2O2Se/BP van der Waals heterojunction for high performance broadband photodetector
Liu, Xing; Wang, Wenhui; Yang, Fang; Feng, Shaopeng; Hu, Zhenliang; Lu, Junpeng; Ni, Zhenhua
Sci China Inf Sci, 2021, 64(4): 140404
Keywords: bi2o2se; bp; van der waals heterojunction; broadband photodetector; low dark current; narrow bandgap
Cite as: Liu X, Wang W H, Yang F, et al. Bi2O2Se/BP van der Waals heterojunction for high performance broadband photodetector. Sci China Inf Sci, 2021, 64(4): 140404, doi: 10.1007/s11432-020-3101-1
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Keywords: mos2; 2d nems; resonators; laser interferometry; responsivity
Cite as: Zhu J K, Zhang P C, Yang R, et al. Analyzing electrostatic modulation of signal transduction efficiency in MoS2 nanoelectromechanical resonators with interferometric readout. Sci China Inf Sci, 2022, 65(2): 122409, doi: 10.1007/s11432-021-3297-x
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Filling the gap: thermal properties and device applications of graphene
Wu, Rui; Zhu, Rui-Zhi; Zhao, Shi-Hui; Zhang, Gang; Tian, He; Ren, Tian-Ling
Sci China Inf Sci, 2021, 64(4): 140401
Keywords: graphene; thermal properties; device application; thermal conductivity; 2d material
Cite as: Wu R, Zhu R-Z, Zhao S-H, et al. Filling the gap: thermal properties and device applications of graphene. Sci China Inf Sci, 2021, 64(4): 140401, doi: 10.1007/s11432-020-3151-5
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Interface engineering of ferroelectric-gated MoS2 phototransistor
Wu, Shuaiqin; Wang, Xudong; Jiang, Wei; Tu, Luqi; Chen, Yan; Liu, Jingjing; Lin, Tie; Shen, Hong; Ge, Jun; Hu, Weida; Meng, Xiangjian; Wang, Jianlu; Chu, Junhao
Sci China Inf Sci, 2021, 64(4): 140407
Keywords: 2d materials; ferroelectrics; mos2 phototransistors; h-bn; interface engineering
Cite as: Wu S Q, Wang X D, Jiang W, et al. Interface engineering of ferroelectric-gated MoS2 phototransistor. Sci China Inf Sci, 2021, 64(4): 140407, doi: 10.1007/s11432-020-3180-5
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Keywords: infrared photodetector; graphene; p-n-p junction; dark current; photoresponse
Cite as: An J R, Sun T, Wang B, et al. Efficient graphene in-plane homogeneous p-n-p junction based infrared photodetectors with low dark current. Sci China Inf Sci, 2021, 64(4): 140403, doi: 10.1007/s11432-020-3179-9
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Raman spectra evidence for the covalent-like quasi-bonding between exfoliated MoS2 and Au films
Huang, Xinyu; Zhang, Lei; Liu, Liwei; Qin, Yang; Fu, Qiang; Wu, Qiong; Yang, Rong; Lv, Jun-Peng; Ni, Zhenhua; Liu, Lei; Ji, Wei; Wang, Yeliang; Zhou, Xingjiang; Huang, Yuan
Sci China Inf Sci, 2021, 64(4): 140406
Keywords: mos2; raman spectroscopy; gold-enhanced mechanical exfoliation; low-frequency raman modes; covalent-like quasi-bonding
Cite as: Huang X Y, Zhang L, Liu L W, et al. Raman spectra evidence for the covalent-like quasi-bonding between exfoliated MoS2 and Au films. Sci China Inf Sci, 2021, 64(4): 140406, doi: 10.1007/s11432-020-3173-9
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Keywords: spin orbit torque; spin currents; spin current gradient; magnetization switching; spin logic
Cite as: Li Y C, Zhang N, Wang K Y. Spin logic operations based on magnetization switching by asymmetric spin current. Sci China Inf Sci, 2022, 65(2): 122404, doi: 10.1007/s11432-020-3246-8
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Optical emission enhancement of bent InSe thin films
Xie, Jiahao; Zhang, Lijun
Sci China Inf Sci, 2021, 64(4): 140405
Keywords: inse; enhanced luminescence; 2d semiconductor; optical transition; optical anisotropy
Cite as: Xie J H, Zhang L J. Optical emission enhancement of bent InSe thin films. Sci China Inf Sci, 2021, 64(4): 140405, doi: 10.1007/s11432-020-3149-2
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A compact model for transition metal dichalcogenide field effect transistors with effects of interface traps
Xu, Yifei; Li, Weisheng; Fan, Dongxu; Shi, Yi; Qiu, Hao; Wang, Xinran
Sci China Inf Sci, 2021, 64(4): 140408
Keywords: compact model; field effect transistor; transition metal dichalcogenide; mos2; interface traps
Cite as: Xu Y F, Li W S, Fan D X, et al. A compact model for transition metal dichalcogenide field effect transistors with effects of interface traps. Sci China Inf Sci, 2021, 64(4): 140408, doi: 10.1007/s11432-020-3155-7
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Carbon nanotube-based CMOS transistors and integrated circuits
Xie, Yunong; Zhang, Zhiyong
Sci China Inf Sci, 2021, 64(10): 201402
Keywords: carbon nanotube; transistor; integrated circuit; scaling; nanoelectronics
Cite as: Xie Y N, Zhang Z Y. Carbon nanotube-based CMOS transistors and integrated circuits. Sci China Inf Sci, 2021, 64(10): 201402, doi: 10.1007/s11432-021-3271-8
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Toward practical gas sensing with rapid recovery semiconducting carbon nanotube film sensors
Liu, Fangfang; Xiao, Mengmeng; Ning, Yongkai; Zhou, Shaoyuan; He, Jianping; Lin, Yanxia; Zhang, Zhiyong
Sci China Inf Sci, 2022, 65(6): 162402
Keywords: carbon nanotube; gas sensor; thin-film transistors; rapid recovery
Cite as: Liu F F, Xiao M M, Ning Y K, et al. Toward practical gas sensing with rapid recovery semiconducting carbon nanotube film sensors. Sci China Inf Sci, 2022, 65(6): 162402, doi: 10.1007/s11432-021-3286-3
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Recent progress in 2D van der Waals heterostructures: fabrication, properties, and applications
Wang, Zenghui; Xu, Bo; Pei, Shenghai; Zhu, Jiankai; Wen, Ting; Jiao, Chenyin; Li, Jing; Zhang, Maodi; Xia, Juan
Sci China Inf Sci, 2022, 65(11): 211401
Keywords: 2D materials; van der Waals heterostructure; interlayer coupling; stacking; layered nanostructures
Cite as: Wang Z H, Xu B, Pei S H, et al. Recent progress in 2D van der Waals heterostructures: fabrication, properties, and applications. Sci China Inf Sci, 2022, 65(11): 211401, doi: 10.1007/s11432-021-3432-6
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Van der Waals heterostructure tunnel FET with potential modulation beyond junction region
Qin, Wenjing; Lv, Yawei; Xia, Zhen; Liao, Lei; Jiang, Changzhong
Sci China Inf Sci, 2022, 65(10): 209401
Keywords: van der Waals; heterostructure; tunnel FET; type-III band alignment; channel potential; density functional theory; Hamiltonian
Cite as: Qin W J, Lv Y W, Xia Z, et al. Van der Waals heterostructure tunnel FET with potential modulation beyond junction region. Sci China Inf Sci, 2022, 65(10): 209401, doi: 10.1007/s11432-021-3335-3
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Efficient charge transfer in WS2/WxMo1−xS2 heterostructure empowered by energy level hybridization
An, Xuhong; Zhang, Yehui; Yu, Yuanfang; Zhao, Weiwei; Yang, Yutian; Niu, Xianghong; Luo, Xuan; Lu, Junpeng; Wang, Jinlan; Ni, Zhenhua
Sci China Inf Sci, 2023, 66(2): 122404
Keywords: van der Waals heterostructure; band offset; hybridization strength; charge transfer; photoluminescence quenching
Cite as: An X H, Zhang Y H, Yu Y F, et al. Efficient charge transfer in WS2/WxMo1−xS2 heterostructure empowered by energy level hybridization. Sci China Inf Sci, 2023, 66(2): 122404, doi: 10.1007/s11432-022-3465-2
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Keywords: knowledge-based neural network; MOSFET; 2D material FETs; Monte Carlo simulations; circuit benchmark
Cite as: Qi G D, Chen X Y, Hu G X, et al. Knowledge-based neural network SPICE modeling for MOSFETs and its application on 2D material field-effect transistors. Sci China Inf Sci, 2023, 66(2): 122405, doi: 10.1007/s11432-021-3483-6
