信息器件 新器件 REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 21

Recent progress of integrated circuits and optoelectronic chips
Hao, Yue; Xiang, Shuiying; Han, Genquan; Zhang, Jincheng; Ma, Xiaohua; Zhu, Zhangming; Guo, Xingxing; Zhang, Yahui; Han, Yanan; Song, Ziwei; Liu, Yan; Yang, Ling; Zhou, Hong; Shi, Jiangyi; Zhang, Wei; Xu, Min; Zhao, Weisheng; Pan, Biao; Huang, Yangqi; Liu, Qi; Cai, Yimao; Zhu, Jian; Ou, Xin; You, Tiangui; Wu, Huaqiang; Gao, Bin; Zhang, Zhiyong; Guo, Guoping; Chen, Yonghua; Liu, Yong; Chen, Xiangfei; Xue, Chunlai; Wang, Xingjun; Zhao, Lixia; Zou, Xihua; Yan, Lianshan; Li, Ming
Sci China Inf Sci, 2021, 64(10): 201401
Keywords: integrated circuit; semiconductor science and technology; optoelectronic device and chip; photonic integrated circuit; wide bandgap semiconductors; silicon photonics; hybrid integration; quantum chip; integrated microwave photonic; photonic neural computing
Cite as: Hao Y, Xiang S Y, Han G Q, et al. Recent progress of integrated circuits and optoelectronic chips. Sci China Inf Sci, 2021, 64(10): 201401, doi: 10.1007/s11432-021-3235-7

信息器件 新器件 REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 13

Neuromorphic sensory computing
Wan, Tianqing; Ma, Sijie; Liao, Fuyou; Fan, Lingwei; Chai, Yang
Sci China Inf Sci, 2022, 65(4): 141401
Keywords: neuromorphic; sensory computing; multimodal sensory computing; electronic sensory computing; optical sensory computing
Cite as: Wan T Q, Ma S J, Liao F Y, et al. Neuromorphic sensory computing. Sci China Inf Sci, 2022, 65(4): 141401, doi: 10.1007/s11432-021-3336-8

信息器件 新器件 REVIEW Webpage Webpage-cn SpringerLink Google Scholar Video Cited in SCI: 11

In-memory computing with emerging nonvolatile memory devices
Cheng, Caidie; Tiw, Pek Jun; Cai, Yimao; Yan, Xiaoqin; Yang, Yuchao; Huang, Ru
Sci China Inf Sci, 2021, 64(12): 221402
Keywords: in-memory computing; von neumann bottleneck; nonvolatile memory; energy efficiency; neural network
Cite as: Cheng C D, Tiw P J, Cai Y M, et al. In-memory computing with emerging nonvolatile memory devices. Sci China Inf Sci, 2021, 64(12): 221402, doi: 10.1007/s11432-021-3327-7

Special Focus on Near-memory and In-memory Computing
信息器件 新器件 REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 9

A survey of in-spin transfer torque MRAM computing
Cai, Hao; Liu, Bo; Chen, Juntong; Naviner, Lirida; Zhou, Yongliang; Wang, Zhen; Yang, Jun
Sci China Inf Sci, 2021, 64(6): 160402
Keywords: spin-transfer torque-magnetoresistive random access memory; in-memory computing; magnetic tunnel junction; analog computing; nonvolatile memory; boolean logic; neural network
Cite as: Cai H, Liu B, Chen J T, et al. A survey of in-spin transfer torque MRAM computing. Sci China Inf Sci, 2021, 64(6): 160402, doi: 10.1007/s11432-021-3220-0

Special Focus on Near-memory and In-memory Computing
信息器件 新器件 PROGRESS Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 9

Breaking the von Neumann bottleneck: architecture-level processing-in-memory technology
Zou, Xingqi; Xu, Sheng; Chen, Xiaoming; Yan, Liang; Han, Yinhe
Sci China Inf Sci, 2021, 64(6): 160404
Keywords: processing-in-memory (pim); von neumann bottleneck; memory wall; pim simulator; architecture-level pim
Cite as: Zou X Q, Xu S, Chen X M, et al. Breaking the von Neumann bottleneck: architecture-level processing-in-memory technology. Sci China Inf Sci, 2021, 64(6): 160404, doi: 10.1007/s11432-020-3227-1

Special Focus on Near-memory and In-memory Computing
信息器件 新器件 REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 6

Graph processing and machine learning architectures with emerging memory technologies: a survey
Qian, Xuehai
Sci China Inf Sci, 2021, 64(6): 160401
Keywords: graph processing; machine learning acceleration; reram; hmc; hbm
Cite as: Qian X H. Graph processing and machine learning architectures with emerging memory technologies: a survey. Sci China Inf Sci, 2021, 64(6): 160401, doi: 10.1007/s11432-020-3219-6

信息器件 新器件 PERSPECTIVE Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 6

Multi level cell (MLC) in 3D crosspoint phase change memory array
Gong, Nanbo
Sci China Inf Sci, 2021, 64(6): 166401
Keywords: memory; pcm; mlc; 1t1r; ots-pcm
Cite as: Gong N. Multi level cell (MLC) in 3D crosspoint phase change memory array. Sci China Inf Sci, 2021, 64(6): 166401, doi: 10.1007/s11432-021-3184-5

Special Focus on Near-memory and In-memory Computing
信息器件 新器件 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 5

Array-level boosting method with spatial extended allocation to improve the accuracy of memristor based computing-in-memory chips
Zhang, Wenqiang; Gao, Bin; Yao, Peng; Tang, Jianshi; Qian, He; Wu, Huaqiang
Sci China Inf Sci, 2021, 64(6): 160406
Keywords: memristor; computing-in-memory; array-level boosting; neuromorphic computing; rram
Cite as: Zhang W Q, Gao B, Yao P, et al. Array-level boosting method with spatial extended allocation to improve the accuracy of memristor based computing-in-memory chips. Sci China Inf Sci, 2021, 64(6): 160406, doi: 10.1007/s11432-020-3198-9

Special Focus on Near-memory and In-memory Computing
信息器件 新器件 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 5

NAS4RRAM: neural network architecture search for inference on RRAM-based accelerators
Yuan, Zhihang; Liu, Jingze; Li, Xingchen; Yan, Longhao; Chen, Haoxiang; Wu, Bingzhe; Yang, Yuchao; Sun, Guangyu
Sci China Inf Sci, 2021, 64(6): 160407
Keywords: network architecture search (nas); neural networks; rram-based accelerator; hardware noise; quantization
Cite as: Yuan Z H, Liu J Z, Li X C, et al. NAS4RRAM: neural network architecture search for inference on RRAM-based accelerators. Sci China Inf Sci, 2021, 64(6): 160407, doi: 10.1007/s11432-020-3245-7

信息器件 新器件 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 4

Tuning the pinning direction of giant magnetoresistive sensor by post annealing process
Cao, Zhiqiang; Wei, Yiming; Chen, Wenjing; Yan, Shaohua; Lin, Lin; Li, Zhi; Wang, Lezhi; Yang, Huaiwen; Leng, Qunwen; Zhao, Weisheng
Sci China Inf Sci, 2021, 64(6): 162402
Keywords: gmr sensor; full wheatstone bridge; annealing; simulation
Cite as: Cao Z Q, Wei Y M, Chen W J, et al. Tuning the pinning direction of giant magnetoresistive sensor by post annealing process. Sci China Inf Sci, 2021, 64(6): 162402, doi: 10.1007/s11432-020-2959-6

信息器件 新器件 LETTER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 3

Layout dependence of total-ionizing-dose response in 65-nm bulk Si pMOSFET
Ren, Zhexuan; An, Xia; Li, Gensong; Zhang, Xing; Huang, Ru
Sci China Inf Sci, 2021, 64(2): 129401
Keywords: radiation; tid; lde; 65nm; pmos; sa
Cite as: Ren Z X, An X, Li G S, et al. Layout dependence of total-ionizing-dose response in 65-nm bulk Si pMOSFET. Sci China Inf Sci, 2021, 64(2): 129401, doi: 10.1007/s11432-019-2795-7

Special Focus on Near-memory and In-memory Computing
信息器件 新器件 REVIEW Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 3

Energy-efficient computing-in-memory architecture for AI processor: device, circuit, architecture perspective
Chang, Liang; Li, Chenglong; Zhang, Zhaomin; Xiao, Jianbiao; Liu, Qingsong; Zhu, Zhen; Li, Weihang; Zhu, Zixuan; Yang, Siqi; Zhou, Jun
Sci China Inf Sci, 2021, 64(6): 160403
Keywords: energy efficiency; computing-in-memory; non-volatile memory; test demonstrators; ai processor
Cite as: Chang L, Li C L, Zhang Z M, et al. Energy-efficient computing-in-memory architecture for AI processor: device, circuit, architecture perspective. Sci China Inf Sci, 2021, 64(6): 160403, doi: 10.1007/s11432-021-3234-0

Special Focus on Near-memory and In-memory Computing
信息器件 新器件 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 3

Bayesian neural network enhancing reliability against conductance drift for memristor neural networks
Zhou, Yue; Hu, Xiaofang; Wang, Lidan; Duan, Shukai
Sci China Inf Sci, 2021, 64(6): 160408
Keywords: conductance drift; neuromorphic computing; bayesian neural network; memristor crossbar array; network reliability
Cite as: Zhou Y, Hu X F, Wang L D, et al. Bayesian neural network enhancing reliability against conductance drift for memristor neural networks. Sci China Inf Sci, 2021, 64(6): 160408, doi: 10.1007/s11432-020-3204-y

信息器件 新器件 LETTER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 3

A unified hybrid compact model of β-Ga2O3 Schottky barrier diodes for mixer and rectifier applications
Zhou, Kai; He, Qiming; Jian, Guangzhong; Xu, Guangwei; Wu, Feihong; Li, Yao; Hu, Zhuangzhuang; Feng, Qian; Zhao, Xiaolong; Long, Shibing
Sci China Inf Sci, 2021, 64(11): 219403
Keywords: β-ga2o3 sbds; compact model; model verification; mixer; rectifier
Cite as: Zhou K, He Q M, Jian G Z, et al. A unified hybrid compact model of β-Ga2O3 Schottky barrier diodes for mixer and rectifier applications. Sci China Inf Sci, 2021, 64(11): 219403, doi: 10.1007/s11432-021-3224-2

信息器件 新器件 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 3

IGZO-based neuromorphic transistors with temperature-dependent synaptic plasticity and spiking logics
Zhu, Ying; He, Yongli; Chen, Chunsheng; Zhu, Li; Wan, Changjin; Wan, Qing
Sci China Inf Sci, 2022, 65(6): 162401
Keywords: neuromorphic transistors; igzo tfts; temperature-dependent synaptic plasticity; logic transformation
Cite as: Zhu Y, He Y L, Chen C S, et al. IGZO-based neuromorphic transistors with temperature-dependent synaptic plasticity and spiking logics. Sci China Inf Sci, 2022, 65(6): 162401, doi: 10.1007/s11432-021-3326-6

信息器件 新器件 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

Design space for stabilized negative capacitance in HfO2 ferroelectric-dielectric stacks based on phase field simulation
Chang, Pengying; Du, Gang; Liu, Xiaoyan
Sci China Inf Sci, 2021, 64(2): 122402
Keywords: ferroelectric; polarization dynamics; hysteresis; negative capacitance; depolarization field
Cite as: Chang P Y, Du G, Liu X Y. Design space for stabilized negative capacitance in HfO2 ferroelectric-dielectric stacks based on phase field simulation. Sci China Inf Sci, 2021, 64(2): 122402, doi: 10.1007/s11432-020-3005-8

信息器件 新器件 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

A bidirectional threshold switching selector with a symmetric multilayer structure
Li, Qingjiang; Li, Kun; Wang, Yongzhou; Liu, Sen; Song, Bing
Sci China Inf Sci, 2021, 64(4): 142402
Keywords: threshold switching selector; resistive random access memory; leakage current; programmable metallization cell
Cite as: Li Q J, Li K, Wang Y Z, et al. A bidirectional threshold switching selector with a symmetric multilayer structure. Sci China Inf Sci, 2021, 64(4): 142402, doi: 10.1007/s11432-020-2960-x

信息器件 新器件 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Supplementary Cited in SCI: 2

Reconfigurable physical unclonable cryptographic primitives based on current-induced nanomagnets switching
Zhang, Shuai; Zhang, Jian; Li, Shihao; Wang, Yaoyuan; Chen, Zhenjiang; Hong, Jeongmin; You, Long
Sci China Inf Sci, 2022, 65(2): 122405
Keywords: reconfigurable physical unclonable function; spin-orbit torque; cryptographic primitive; spintronics; nanomagnet
Cite as: Zhang S, Zhang J, Li S H, et al. Reconfigurable physical unclonable cryptographic primitives based on current-induced nanomagnets switching. Sci China Inf Sci, 2022, 65(2): 122405, doi: 10.1007/s11432-021-3270-8

信息器件 新器件 LETTER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

Unidirectional p-GaN gate HEMT with composite source-drain field plates
Wang, Haiyong; Mao, Wei; Zhao, Shenglei; He, Yuanhao; Chen, Jiabo; Du, Ming; Zheng, Xuefeng; Wang, Chong; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue
Sci China Inf Sci, 2022, 65(2): 129405
Keywords: p-gan; hemt; reverse blocking; composite source-drain field plates; dynamic performance; electric field; breakdown voltage
Cite as: Wang H Y, Mao W, Zhao S L, et al. Unidirectional p-GaN gate HEMT with composite source-drain field plates. Sci China Inf Sci, 2022, 65(2): 129405, doi: 10.1007/s11432-021-3267-3

信息器件 新器件 LETTER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 2

Experimental investigation of the gate voltage range of negative differential capacitance in ferroelectric transistors
YANG, Mengxuan; HUANG, Qianqian; SU, Chang; CHEN, Liang; WANG, Yangyuan; HUANG, Ru
Sci China Inf Sci, 2022, 65(6): 169402
Keywords: Ferroelectric; Negative differential capacitance effect; Polarization; Low power; Subthreshold swing
Cite as: Yang M X, Huang Q Q, Su C, et al. Experimental investigation of the gate voltage range of negative differential capacitance in ferroelectric transistors. Sci China Inf Sci, 2022, 65(6): 169402, doi: 10.1007/s11432-021-3268-0

Special Focus on Near-memory and In-memory Computing
信息器件 新器件 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

Neural connectivity inference with spike-timing dependent plasticity network
Moon, John; Wu, Yuting; Zhu, Xiaojian; Lu, Wei D.
Sci China Inf Sci, 2021, 64(6): 160405
Keywords: spike-timing dependent plasticity; neural connectivity; memristor; online learning; second-order memristor
Cite as: Moon J, Wu Y T, Zhu X J, et al. Neural connectivity inference with spike-timing dependent plasticity network. Sci China Inf Sci, 2021, 64(6): 160405, doi: 10.1007/s11432-021-3217-0

Special Focus on Near-memory and In-memory Computing
信息器件 新器件 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

Towards efficient allocation of graph convolutional networks on hybrid computation-in-memory architecture
Chen, Jiaxian; Lin, Guanquan; Chen, Jiexin; Wang, Yi
Sci China Inf Sci, 2021, 64(6): 160409
Keywords: computation-in-memory; graph convolutional networks; hybrid architecture; scheduling; inference; accelerator
Cite as: Chen J X, Lin G Q, Chen J X, et al. Towards efficient allocation of graph convolutional networks on hybrid computation-in-memory architecture. Sci China Inf Sci, 2021, 64(6): 160409, doi: 10.1007/s11432-020-3248-y

信息器件 新器件 LETTER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

Design of a high-performance 12T SRAM cell for single event upset tolerance
Qi, Chunhua; Zhang, Yanqing; Ma, Guoliang; Liu, Chaoming; Wang, Tianqi; Xiao, Liyi; Huo, Mingxue; Zhai, Guofu
Sci China Inf Sci, 2021, 64(11): 219401
Keywords: reliability; single event upset; sram; radiation hardened by design; single event effect
Cite as: Qi C H, Zhang Y Q, Ma G L, et al. Design of a high-performance 12T SRAM cell for single event upset tolerance. Sci China Inf Sci, 2021, 64(11): 219401, doi: 10.1007/s11432-020-3123-2

信息器件 新器件 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

Low-time-complexity document clustering using memristive dot product engine
Zhou, Houji; Li, Yi; Miao, Xiangshui
Sci China Inf Sci, 2022, 65(2): 122410
Keywords: linear-time clustering; cosine similarity; spherical k-means; memristor; in-memory computing
Cite as: Zhou H J, Li Y, Miao X S. Low-time-complexity document clustering using memristive dot product engine. Sci China Inf Sci, 2022, 65(2): 122410, doi: 10.1007/s11432-021-3316-x

信息器件 新器件 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 1

Physical investigation of subthreshold swing degradation behavior in negative capacitance FET
Yang, Mengxuan; Huang, Qianqian; Wang, Kaifeng; Su, Chang; Chen, Liang; Wang, Yangyuan; Huang, Ru
Sci China Inf Sci, 2022, 65(6): 162404
Keywords: ferroelectric; negative differential capacitance effect; polarization; low power; voltage amplification
Cite as: Yang M X, Huang Q Q, Wang K F, et al. Physical investigation of subthreshold swing degradation behavior in negative capacitance FET. Sci China Inf Sci, 2022, 65(6): 162404, doi: 10.1007/s11432-021-3283-5

信息器件 新器件 LETTER Webpage Webpage-cn SpringerLink Google Scholar Supplementary Cited in SCI: 1

A comprehensive study of device variability of sub-5 nm nanosheet transistors and interplay with quantum confinement variation
Luo, Haowen; Li, Ruihan; Miao, Xiangshui; Wang, Xingsheng
Sci China Inf Sci, 2023, 66(2): 129402
Keywords: nanosheet transistor; TCAD simulation; quantum confinement variation; process variation; statistical variability; interplay
Cite as: Luo H W, Li R H, Miao X S, et al. A comprehensive study of device variability of sub-5 nm nanosheet transistors and interplay with quantum confinement variation. Sci China Inf Sci, 2023, 66(2): 129402, doi: 10.1007/s11432-021-3399-3

信息器件 新器件 LETTER Webpage Webpage-cn SpringerLink Google Scholar Supplementary Cited in SCI: 1

Hf0.5Zr0.5O2 1T–1C FeRAM arrays with excellent endurance performance for embedded memory
Xiao, Wenwu; Peng, Yue; Liu, Yan; Duan, Huifu; Bai, Fujun; Yu, Bing; Ren, Qiwei; Yu, Xiao; Han, Genquan
Sci China Inf Sci, 2023, 66(4): 149401
Keywords: FeRAM; Hf0.5Zr0.5O2; Arrays; Endurance; Ferroelectric
Cite as: Xiao W W, Peng Y, Liu Y, et al. Hf0.5Zr0.5O2 1T–1C FeRAM arrays with excellent endurance performance for embedded memory. Sci China Inf Sci, 2023, 66(4): 149401, doi: 10.1007/s11432-022-3469-5

信息器件 新器件 LETTER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

High mobility germanium-on-insulator p-channel FinFETs
Liu, Huan; Han, Genquan; Zhou, Jiuren; Liu, Yan; Hao, Yue
Sci China Inf Sci, 2021, 64(4): 149402
Keywords: zro2; high mobility; p-channel; finfet; germanium on insulator
Cite as: Liu H, Han G Q, Zhou J R, et al. High mobility germanium-on-insulator p-channel FinFETs. Sci China Inf Sci, 2021, 64(4): 149402, doi: 10.1007/s11432-019-2846-9

信息器件 新器件 LETTER Webpage Webpage-cn SpringerLink Google Scholar Supplementary Cited in SCI: 0

Flash memory based computing-in-memory system to solve partial differential equations
Feng, Yang; Wang, Fei; Zhan, Xuepeng; Li, Yuan; Chen, Jiezhi
Sci China Inf Sci, 2021, 64(6): 169401
Keywords: jacobi iteration; computing-in-memory; flash memory; partial differential equation; spice simulation
Cite as: Feng Y, Wang F, Zhan X P, et al. Flash memory based computing-in-memory system to solve partial differential equations. Sci China Inf Sci, 2021, 64(6): 169401, doi: 10.1007/s11432-020-2942-2

信息器件 新器件 LETTER Webpage Webpage-cn SpringerLink Google Scholar Supplementary Cited in SCI: 0

Controlled nano-cracking actuated by an in-plane voltage
Luo, Qiang; Guo, Zhe; Zhang, Shuai; Yang, Xiaofei; Zou, Xuecheng; Hong, Jeongmin; You, Long
Sci China Inf Sci, 2021, 64(8): 189403
Keywords: nanoelectromechanical switch; ferroelectric nano-cracking; non-volatile switching; complementary switching; reconfigurable logic
Cite as: Luo Q, Guo Z, Zhang S, et al. Controlled nano-cracking actuated by an in-plane voltage. Sci China Inf Sci, 2021, 64(8): 189403, doi: 10.1007/s11432-020-3098-x

信息器件 新器件 LETTER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Nano-scaled transistor reliability characterization at nano-second regime
Cheng, Ran; Sun, Ying; Qu, Yiming; Liu, Wei; Liu, Fanyu; Gao, Jianfeng; Xu, Nuo; Chen, Bing
Sci China Inf Sci, 2021, 64(10): 209401
Keywords: fdsoi; self-heating effect; reliability; prbs; vth shift
Cite as: Cheng R, Sun Y, Qu Y M, et al. Nano-scaled transistor reliability characterization at nano-second regime. Sci China Inf Sci, 2021, 64(10): 209401, doi: 10.1007/s11432-020-3088-3

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Investigation of weight updating modes on oxide-based resistive switching memory synapse towards neuromorphic computing applications
Ding, Qingting; Gong, Tiancheng; Yu, Jie; Xu, Xiaoxin; Li, Xiaoyan; Lv, Hangbing; Yang, Jianguo; Luo, Qing; Yuan, Peng; Zhang, Feng; Liu, Ming
Sci China Inf Sci, 2021, 64(11): 219402
Keywords: gate voltage ramping; gvr; constant drain voltage; cdv; time lag plot; rtn; neuromorphic computing
Cite as: Ding Q T, Gong T C, Yu J, et al. . Investigation of weight updating modes on oxide-based resistive switching memory synapse towards neuromorphic computing applications. Sci China Inf Sci, 2021, 64(11): 219402, doi: 10.1007/s11432-020-3127-x

信息器件 新器件 RESEARCH PAPER Webpage Webpage-cn SpringerLink Google Scholar Cited in SCI: 0

Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate
Zhao, Dujun; Wu, Zhaoxi; Duan, Chao; Mei, Bo; Li, Zhongyang; Wang, Zhongxu; Tang, Qing; Yang, Qing; Wu, Yinhe; Zhang, Weihang; Liu, Zhihong; Zhao, Shenglei; Zhang, Jincheng; Hao, Yue
Sci China Inf Sci, 2022, 65(2): 122401
Keywords: reverse-blocking voltage; aln/algan hemts; schottky-drain; field plate; optimal passivation thickness
Cite as: Zhao D J, Wu Z X, Duan C, et al. Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate. Sci China Inf Sci, 2022, 65(2): 122401, doi: 10.1007/s11432-020-3166-9

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Stateful implication logic based on perpendicular magnetic tunnel junctions
Cai, Wenlong; Wang, Mengxing; Cao, Kaihua; Yang, Huaiwen; Peng, Shouzhong; Li, Huisong; Zhao, Weisheng
Sci China Inf Sci, 2022, 65(2): 122406
Keywords: perpendicular magnetic anisotropy magnetic tunnel junction; implication; spin transfer torque; spintronic implication logic gate; processing-in-memory
Cite as: Cai W L, Wang M X, Cao K H, et al. Stateful implication logic based on perpendicular magnetic tunnel junctions. Sci China Inf Sci, 2022, 65(2): 122406, doi: 10.1007/s11432-020-3189-x

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Effects of non-fatal electrostatic discharge on the threshold voltage degradation in nano CMOS devices
Wong, Hei; Dong, Shurong; Chen, Zehua
Sci China Inf Sci, 2022, 65(2): 129403
Keywords: nano cmos; esd; reliability; hot-carrier; charge trapping
Cite as: Wong H, Dong S R, Chen Z H. Effects of non-fatal electrostatic discharge on the threshold voltage degradation in nano CMOS devices. Sci China Inf Sci, 2022, 65(2): 129403, doi: 10.1007/s11432-020-3197-8

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Femtosecond laser-assisted switching in perpendicular magnetic tunnel junctions with double-interface free layer
Wang, Luding; Cai, Wenlong; Cao, Kaihua; Shi, Kewen; Koopmans, Bert; Zhao, Weisheng
Sci China Inf Sci, 2022, 65(4): 142403
Keywords: magnetic tunnel junctions; mtjs; heat-assisted magnetic recording; hamr; spintronics; femtosecond laser; thermally-assisted switching; tas
Cite as: Wang L D, Cai W L, Cao K H, et al. Femtosecond laser-assisted switching in perpendicular magnetic tunnel junctions with double-interface free layer. Sci China Inf Sci, 2022, 65(4): 142403, doi: 10.1007/s11432-020-3244-8

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Total ionizing dose effects on aluminum oxide/ zirconium-doped hafnium oxide stack ferroelectric tunneling junctions
Yang, Xueqin; Xu, Yannan; Bi, Jinshun; Xi, Kai; Fan, Linjie; Ji, Lanlong; Xu, Gaobo
Sci China Inf Sci, 2022, 65(6): 169403
Keywords: HfO2; ferroelectric tunneling junctions; dielectric; total ionizing dose; gamma-ray radiation
Cite as: Yang X Q, Xu Y N, Bi J S, et al. Total ionizing dose effects on aluminum oxide/ zirconium-doped hafnium oxide stack ferroelectric tunneling junctions. Sci China Inf Sci, 2022, 65(6): 169403, doi: 10.1007/s11432-021-3269-4

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Novel SiC SBD-wall-integrated trench MOSFET with a semi-superjunction and split trench gate
Luo, Xiaorong; Huang, Junyue; Song, Xu; Jiang, Qinfeng; Wei, Jie; Fang, Jian; Yang, Fei
Sci China Inf Sci, 2022, 65(6): 169404
Keywords: SiC; MOSFET; Schottky barrier diode; semi-superjunction; split trench gate; reverse turn-on voltage
Cite as: Luo X R, Huang J Y, Song X, et al. Novel SiC SBD-wall-integrated trench MOSFET with a semi-superjunction and split trench gate. Sci China Inf Sci, 2022, 65(6): 169404, doi: 10.1007/s11432-021-3324-0

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Efficient heterogeneous integration of InP/Si and GaSb/Si templates with ultra-smooth surfaces
Jin, Tingting; Lin, Jiajie; You, Tiangui; Zhang, Xiaolei; Liang, Hao; Zhu, Yifan; Sun, Jialiang; Shi, Hangning; Chi, Chaodan; Zhou, Min; Kudrawiec, Robert; Wang, Shumin; Ou, Xin
Sci China Inf Sci, 2022, 65(8): 182402
Keywords: heterogeneous integration; InP/Si; GaSb/Si; MBE; ion-slicing technique; selective chemical etching
Cite as: Jin T T, Lin J J, You T G, et al. Efficient heterogeneous integration of InP/Si and GaSb/Si templates with ultra-smooth surfaces. Sci China Inf Sci, 2022, 65(8): 182402, doi: 10.1007/s11432-021-3398-y

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Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs
Wu, Yinhe; Zhang, Jincheng; Zhao, Shenglei; Wu, Zhaoxi; Wang, Zhongxu; Mei, Bo; Duan, Chao; Zhao, Dujun; Zhang, Weihang; Liu, Zhihong; Hao, Yue
Sci China Inf Sci, 2022, 65(8): 182404
Keywords: heavy ions irradiation; p-GaN normally-off HEMTs; line-shaped crystal defects; leakage path; defect percolation process
Cite as: Wu Y H, Zhang J C, Zhao S L, et al. Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs. Sci China Inf Sci, 2022, 65(8): 182404, doi: 10.1007/s11432-021-3305-2

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Single event transients induced by pulse laser in Ge pMOSFETs and its supply voltage dependence
LIU, Jingyi; AN, Xia; LI, Gensong; REN, Zhexuan; LI, Ming; ZHANG, Xing; HUANG, Ru
Sci China Inf Sci, 2022, 65(8): 189402
Keywords: Ge pMOSFETs; single event transient; single event effect; SEE; pulse laser; supply voltage dependence
Cite as: Liu J Y, An X, Li G S, et al. Single event transients induced by pulse laser in Ge pMOSFETs and its supply voltage dependence. Sci China Inf Sci, 2022, 65(8): 189402, doi: 10.1007/s11432-021-3372-2

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Insights of VG-dependent threshold voltage fluctuations from dual-point random telegraph noise characterization in nanoscale transistors
ZHAN, Xuepeng; CHEN, Jiezhi; JI, Zhigang
Sci China Inf Sci, 2022, 65(8): 189405
Keywords: random telegraph noise; threshold voltage fluctuations; RTN magnitude; reliability; variation
Cite as: Zhan X P, Chen J Z, Ji Z G. Insights of VG-dependent threshold voltage fluctuations from dual-point random telegraph noise characterization in nanoscale transistors. Sci China Inf Sci, 2022, 65(8): 189405, doi: 10.1007/s11432-021-3330-8

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Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method
Liu, Siyu; Ma, Xiaohua; Zhu, Jiejie; Mi, Minhan; Guo, Jingshu; Liu, Jielong; Chen, Yilin; Zhu, Qing; Yang, Ling; Hao, Yue
Sci China Inf Sci, 2022, 65(10): 202401
Keywords: GaN; InAlN/GaN HEMTs; etching damage; scattering mechanism
Cite as: Liu S Y, Ma X H, Zhu J J, et al. Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method. Sci China Inf Sci, 2022, 65(10): 202401, doi: 10.1007/s11432-021-3359-y

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Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light
Chen, Yilin; Zhu, Qing; Zhu, Jiejie; Mi, Minhan; Zhang, Meng; Zhou, Yuwei; Zhao, Ziyue; Ma, Xiaohua; Hao, Yue
Sci China Inf Sci, 2023, 66(2): 122401
Keywords: GaN; MIS HEMTs; off-state stress; UV light; hole trapping
Cite as: Chen Y L, Zhu Q, Zhu J J, et al. Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light. Sci China Inf Sci, 2023, 66(2): 122401, doi: 10.1007/s11432-021-3377-2

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A memristive neural network based matrix equation solver with high versatility and high energy efficiency
Li, Jiancong; Zhou, Houji; Li, Yi; Miao, Xiangshui
Sci China Inf Sci, 2023, 66(2): 122402
Keywords: matrix equation solving; memristor; linear neural network; matrix-multiplication; analog com- puting
Cite as: Li J C, Zhou H J, Li Y, et al. A memristive neural network based matrix equation solver with high versatility and high energy efficiency. Sci China Inf Sci, 2023, 66(2): 122402, doi: 10.1007/s11432-021-3374-x

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Associative learning of a three-terminal memristor network for digits recognition
Ren, Yiming; Tian, Bobo; Yan, Mengge; Feng, Guangdi; Gao, Bin; Yue, Fangyu; Peng, Hui; Tang, Xiaodong; Zhu, Qiuxiang; Chu, Junhao; Duan, Chungang
Sci China Inf Sci, 2023, 66(2): 122403
Keywords: artificial intelligence; associative learning; memristor; classification network
Cite as: Ren Y M, Tian B B, Yan M G, et al. Associative learning of a three-terminal memristor network for digits recognition. Sci China Inf Sci, 2023, 66(2): 122403, doi: 10.1007/s11432-022-3503-4

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1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate
Zhao, Shenglei; Zhang, Jincheng; Zhang, Yachao; Feng, Lansheng; Liu, Shuang; Song, Xiufeng; Yao, Yixin; Luo, Jun; Liu, Zhihong; Xu, Shengrui; Hao, Yue
Sci China Inf Sci, 2023, 66(2): 122407
Keywords: p-GaN gate; HEMTs; high voltage; SiC substrate
Cite as: Zhao S L, Zhang J C, Zhang Y C, et al. 1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate. Sci China Inf Sci, 2023, 66(2): 122407, doi: 10.1007/s11432-022-3475-9

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Perpendicular magnetic anisotropy based spintronics devices in Pt/Co stacks under different hard and flexible substrates
Eimer S, Cheng H Y, Li J J, et al
Sci China Inf Sci, 2023, 66(2): 122408
Keywords: Pt/Co stacks; perpendicular magnetic anisotropy; magnetodynamic behavior; spintronics flexible devices; high temperature deposition
Cite as: Eimer S, Cheng H Y, Li J J, et al. Perpendicular magnetic anisotropy based spintronics devices in Pt/Co stacks under different hard and flexible substrates. Sci China Inf Sci, 2023, 66(2): 122408, doi: 10.1007/s11432-021-3371-4

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Freely switching between ferroelectric and resistive switching in Hf 0.5Zr0.5O2 films and its application on high accuracy on-chip deep neural networks
Jiang P F, Xu K R, Yu J, et al
Sci China Inf Sci, 2023, 66(2): 122409
Keywords: Hf0.5Zr0.5O2 films; ferroelectric; resistive switching; accuracy; on-chip DNN
Cite as: Jiang P F, Xu K R, Yu J, et al. Freely switching between ferroelectric and resistive switching in Hf 0.5Zr0.5O2 films and its application on high accuracy on-chip deep neural networks. Sci China Inf Sci, 2023, 66(2): 122409, doi: 10.1007/s11432-022-3508-7

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Co-optimization strategy between array operation and weight mapping for flash computing arrays to achieve high computing efficiency and accuracy
Yu, Guihai; Huang, Peng; Han, Runze; Han, Lixia; Liu, Xiaoyan; Kang, Jinfeng
Sci China Inf Sci, 2023, 66(2): 129403
Keywords: neural network; Flash computing array; efficient computation; weight mapping; interconnect resistance
Cite as: Yu G H, Huang P, Han R Z, et al. Co-optimization strategy between array operation and weight mapping for flash computing arrays to achieve high computing efficiency and accuracy. Sci China Inf Sci, 2023, 66(2): 129403, doi: 10.1007/s11432-021-3381-3

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NAND-SPIN-based processing-in-MRAM architecture for convolutional neural network acceleration
Zhao Y L, Yang J L, Li B, et al
Sci China Inf Sci, 2023, 66(4): 142401
Keywords: processing-in-memory; convolutional neural network; NAND-like spintronics memory; non- volatile memory; magnetic tunnel junction
Cite as: Zhao Y L, Yang J L, Li B, et al. NAND-SPIN-based processing-in-MRAM architecture for convolutional neural network acceleration. Sci China Inf Sci, 2023, 66(4): 142401, doi: 10.1007/s11432-021-3472-9

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An ultra-high-density and energy-efficient content addressable memory design based on 3D-NAND flash
Yang H Z, Huang P, Han R Z, et al
Sci China Inf Sci, 2023, 66(4): 142402
Keywords: content addressable memory; CAM; 3D-NAND flash; data-intensive computing; in-memory computing; multilevel CAM
Cite as: Yang H Z, Huang P, Han R Z, et al. An ultra-high-density and energy-efficient content addressable memory design based on 3D-NAND flash. Sci China Inf Sci, 2023, 66(4): 142402, doi: 10.1007/s11432-021-3502-4

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Multi-grained system integration for hybrid-paradigm brain-inspired computing
Pei J, Deng L, Ma C, et al
Sci China Inf Sci, 2023, 66(4): 142403
Keywords: brain-inspired computing; multi-grained system integration; hybrid paradigm; Tianjic chip; brain-inspired platform
Cite as: Pei J, Deng L, Ma C, et al. Multi-grained system integration for hybrid-paradigm brain-inspired computing. Sci China Inf Sci, 2023, 66(4): 142403, doi: 10.1007/s11432-021-3510-6

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Impact of polarization switching on the effective carrier mobility of HfZrOx ferroelectric field-effect transistor
Liu F N, Peng Y, Xiao W W, et al
Sci China Inf Sci, 2023, 66(6): 169402
Keywords: mobility; HfZrOx; FeFET; trapping; detrapping; endurance; retention
Cite as: Liu F N, Peng Y, Xiao W W, et al. Impact of polarization switching on the effective carrier mobility of HfZrOx ferroelectric field-effect transistor. Sci China Inf Sci, 2023, 66(6): 169402, doi: 10.1007/s11432-022-3491-6