信息器件 新器件 REVIEW Website SpringerLink Google Scholar Cited in SCI: 9

Recent progress of integrated circuits and optoelectronic chips
Hao, Yue; Xiang, Shuiying; Han, Genquan; Zhang, Jincheng; Ma, Xiaohua; Zhu, Zhangming; Guo, Xingxing; Zhang, Yahui; Han, Yanan; Song, Ziwei; Liu, Yan; Yang, Ling; Zhou, Hong; Shi, Jiangyi; Zhang, Wei; Xu, Min; Zhao, Weisheng; Pan, Biao; Huang, Yangqi; Liu, Qi; Cai, Yimao; Zhu, Jian; Ou, Xin; You, Tiangui; Wu, Huaqiang; Gao, Bin; Zhang, Zhiyong; Guo, Guoping; Chen, Yonghua; Liu, Yong; Chen, Xiangfei; Xue, Chunlai; Wang, Xingjun; Zhao, Lixia; Zou, Xihua; Yan, Lianshan; Li, Ming
Sci China Inf Sci, 2021, 64(10): 201401
Keywords: integrated circuit; semiconductor science and technology; optoelectronic device and chip; photonic integrated circuit; wide bandgap semiconductors; silicon photonics; hybrid integration; quantum chip; integrated microwave photonic; photonic neural computing
Cite as: Hao Y, Xiang S Y, Han G Q, et al. Recent progress of integrated circuits and optoelectronic chips. Sci China Inf Sci, 2021, 64(10): 201401, doi: 10.1007/s11432-021-3235-7

Special Focus on Near-memory and In-memory Computing
信息器件 新器件 REVIEW Website SpringerLink Google Scholar Cited in SCI: 6

A survey of in-spin transfer torque MRAM computing
Cai, Hao; Liu, Bo; Chen, Juntong; Naviner, Lirida; Zhou, Yongliang; Wang, Zhen; Yang, Jun
Sci China Inf Sci, 2021, 64(6): 160402
Keywords: spin-transfer torque-magnetoresistive random access memory; in-memory computing; magnetic tunnel junction; analog computing; nonvolatile memory; boolean logic; neural network
Cite as: Cai H, Liu B, Chen J T, et al. A survey of in-spin transfer torque MRAM computing. Sci China Inf Sci, 2021, 64(6): 160402, doi: 10.1007/s11432-021-3220-0

信息器件 新器件 RESEARCH PAPER Website SpringerLink Google Scholar Cited in SCI: 5

Vertical SnS2/Si heterostructure for tunnel diodes
Jia, Rundong; Huang, Qianqian; Huang, Ru
Sci China Inf Sci, 2020, 63(2): 122401
Keywords: 2d/3d heterostructure; sns2/si; tunnel barrier; tunnel diode; energy-efficient
Cite as: Jia R D, Huang Q Q, Huang R. Vertical SnS2/Si heterostructure for tunnel diodes. Sci China Inf Sci, 2020, 63(2): 122401, doi: 10.1007/s11432-019-9836-9

信息器件 新器件 RESEARCH PAPER Website SpringerLink Google Scholar Cited in SCI: 5

Efficient 16 Boolean logic and arithmetic based on bipolar oxide memristors
Yuan, Rui; Ma, Mingyuan; Xu, Liying; Zhu, Zhenhua; Duan, Qingxi; Zhang, Teng; Zhu, Yu; Wang, Yu; Huang, Ru; Yang, Yuchao
Sci China Inf Sci, 2020, 63(10): 202401
Keywords: memristor; nonvolatile logic; in-memory computing; full adder; multiplier
Cite as: Yuan R, Ma M Y, Xu L Y, et al. Efficient 16 Boolean logic and arithmetic based on bipolar oxide memristors. Sci China Inf Sci, 2020, 63(10): 202401, doi: 10.1007/s11432-020-2866-0

Special Focus on Near-memory and In-memory Computing
信息器件 新器件 RESEARCH PAPER Website SpringerLink Google Scholar Cited in SCI: 3

Array-level boosting method with spatial extended allocation to improve the accuracy of memristor based computing-in-memory chips
Zhang, Wenqiang; Gao, Bin; Yao, Peng; Tang, Jianshi; Qian, He; Wu, Huaqiang
Sci China Inf Sci, 2021, 64(6): 160406
Keywords: memristor; computing-in-memory; array-level boosting; neuromorphic computing; rram
Cite as: Zhang W Q, Gao B, Yao P, et al. Array-level boosting method with spatial extended allocation to improve the accuracy of memristor based computing-in-memory chips. Sci China Inf Sci, 2021, 64(6): 160406, doi: 10.1007/s11432-020-3198-9

信息器件 新器件 LETTER Website SpringerLink Google Scholar Cited in SCI: 2

Keywords: subthreshold swing; band-to-band tunneling; btbt; adaptive bandgap engineering; junction depleted-modulation; tunnel field-effect transistor
Cite as: Zhao Y, Huang Q Q, Huang R. A novel tunnel FET design through hybrid modulation with optimized subthreshold characteristics and high drive capability. Sci China Inf Sci, 2020, 63(2): 129402, doi: 10.1007/s11432-019-9874-9

信息器件 新器件 LETTER Website SpringerLink Google Scholar Supplementary Cited in SCI: 2

Fully coupled electrothermal simulation of resistive random access memory (RRAM) array
Wang, Da-Wei; Zhao, Wen-Sheng; Chen, Wenchao; Xie, Hao; Yin, Wen-Yan
Sci China Inf Sci, 2020, 63(8): 189401
Keywords: rram; electrothermal characteristics; ddm; parallel simulator; numerical scheme
Cite as: Wang D-W, Zhao W-S, Chen W C, et al. Fully coupled electrothermal simulation of resistive random access memory (RRAM) array. Sci China Inf Sci, 2020, 63(8): 189401, doi: 10.1007/s11432-019-2667-5

信息器件 新器件 LETTER Website SpringerLink Google Scholar Cited in SCI: 2

Layout dependence of total-ionizing-dose response in 65-nm bulk Si pMOSFET
Ren, Zhexuan; An, Xia; Li, Gensong; Zhang, Xing; Huang, Ru
Sci China Inf Sci, 2021, 64(2): 129401
Keywords: radiation; tid; lde; 65nm; pmos; sa
Cite as: Ren Z X, An X, Li G S, et al. Layout dependence of total-ionizing-dose response in 65-nm bulk Si pMOSFET. Sci China Inf Sci, 2021, 64(2): 129401, doi: 10.1007/s11432-019-2795-7

信息器件 新器件 RESEARCH PAPER Website SpringerLink Google Scholar Cited in SCI: 2

A bidirectional threshold switching selector with a symmetric multilayer structure
Li, Qingjiang; Li, Kun; Wang, Yongzhou; Liu, Sen; Song, Bing
Sci China Inf Sci, 2021, 64(4): 142402
Keywords: threshold switching selector; resistive random access memory; leakage current; programmable metallization cell
Cite as: Li Q J, Li K, Wang Y Z, et al. A bidirectional threshold switching selector with a symmetric multilayer structure. Sci China Inf Sci, 2021, 64(4): 142402, doi: 10.1007/s11432-020-2960-x

Special Focus on Near-memory and In-memory Computing
信息器件 新器件 REVIEW Website SpringerLink Google Scholar Cited in SCI: 2

Energy-efficient computing-in-memory architecture for AI processor: device, circuit, architecture perspective
Chang, Liang; Li, Chenglong; Zhang, Zhaomin; Xiao, Jianbiao; Liu, Qingsong; Zhu, Zhen; Li, Weihang; Zhu, Zixuan; Yang, Siqi; Zhou, Jun
Sci China Inf Sci, 2021, 64(6): 160403
Keywords: energy efficiency; computing-in-memory; non-volatile memory; test demonstrators; ai processor
Cite as: Chang L, Li C L, Zhang Z M, et al. Energy-efficient computing-in-memory architecture for AI processor: device, circuit, architecture perspective. Sci China Inf Sci, 2021, 64(6): 160403, doi: 10.1007/s11432-021-3234-0

Special Focus on Near-memory and In-memory Computing
信息器件 新器件 RESEARCH PAPER Website SpringerLink Google Scholar Cited in SCI: 2

NAS4RRAM: neural network architecture search for inference on RRAM-based accelerators
Yuan, Zhihang; Liu, Jingze; Li, Xingchen; Yan, Longhao; Chen, Haoxiang; Wu, Bingzhe; Yang, Yuchao; Sun, Guangyu
Sci China Inf Sci, 2021, 64(6): 160407
Keywords: network architecture search (nas); neural networks; rram-based accelerator; hardware noise; quantization
Cite as: Yuan Z H, Liu J Z, Li X C, et al. NAS4RRAM: neural network architecture search for inference on RRAM-based accelerators. Sci China Inf Sci, 2021, 64(6): 160407, doi: 10.1007/s11432-020-3245-7

Special Focus on Near-memory and In-memory Computing
信息器件 新器件 RESEARCH PAPER Website SpringerLink Google Scholar Cited in SCI: 2

Bayesian neural network enhancing reliability against conductance drift for memristor neural networks
Zhou, Yue; Hu, Xiaofang; Wang, Lidan; Duan, Shukai
Sci China Inf Sci, 2021, 64(6): 160408
Keywords: conductance drift; neuromorphic computing; bayesian neural network; memristor crossbar array; network reliability
Cite as: Zhou Y, Hu X F, Wang L D, et al. Bayesian neural network enhancing reliability against conductance drift for memristor neural networks. Sci China Inf Sci, 2021, 64(6): 160408, doi: 10.1007/s11432-020-3204-y

信息器件 新器件 PERSPECTIVE Website SpringerLink Google Scholar Cited in SCI: 2

Multi level cell (MLC) in 3D crosspoint phase change memory array
Gong, Nanbo
Sci China Inf Sci, 2021, 64(6): 166401
Keywords: memory; pcm; mlc; 1t1r; ots-pcm
Cite as: Gong N. Multi level cell (MLC) in 3D crosspoint phase change memory array. Sci China Inf Sci, 2021, 64(6): 166401, doi: 10.1007/s11432-021-3184-5

信息器件 新器件 REVIEW Website SpringerLink Google Scholar Homepage Cited in SCI: 2

In-memory computing with emerging nonvolatile memory devices
Cheng, Caidie; Tiw, Pek Jun; Cai, Yimao; Yan, Xiaoqin; Yang, Yuchao; Huang, Ru
Sci China Inf Sci, 2021, 64(12): 221402
Keywords: in-memory computing; von neumann bottleneck; nonvolatile memory; energy efficiency; neural network
Cite as: Cheng C D, Tiw P J, Cai Y M, et al. In-memory computing with emerging nonvolatile memory devices. Sci China Inf Sci, 2021, 64(12): 221402, doi: 10.1007/s11432-021-3327-7

信息器件 新器件 LETTER Website SpringerLink Google Scholar Cited in SCI: 1

Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks
Yang, Hong; Qi, Luwei; Zhang, Yanbo; Tang, Bo; Liu, Qianqian; Xu, Hao; Ma, Xueli; Wang, Xiaolei; Li, Yongliang; Yin, Huaxiang; Li, Junfeng; Zhu, Huilong; Zhao, Chao; Wang, Wenwu; Ye, Tianchun
Sci China Inf Sci, 2020, 63(2): 129403
Keywords: titanium nitride; capping layer; ald tin; finfet; positive bias temperature instability; pbti
Cite as: Yang H, Qi L W, Zhang Y B, et al. Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks. Sci China Inf Sci, 2020, 63(2): 129403, doi: 10.1007/s11432-019-9875-2

信息器件 新器件 LETTER Website SpringerLink Google Scholar Cited in SCI: 1

A photomemory by selective-assembling hybrid porphyrin-silicon nanowire field-effect transistor
Chen, Gong; Yu, Bocheng; Li, Xiaokang; Dong, Xiaoqiao; Xu, Xiaoyan; Li, Zhihong; Huang, Ru; Li, Ming
Sci China Inf Sci, 2020, 63(6): 169401
Keywords: photomemory; porphyrin; silicon nanowire transistor; selective-assembling; cmos-compatible
Cite as: Chen G, Yu B C, Li X K, et al. A photomemory by selective-assembling hybrid porphyrin-silicon nanowire field-effect transistor. Sci China Inf Sci, 2020, 63(6): 169401, doi: 10.1007/s11432-019-9842-3

信息器件 新器件 RESEARCH PAPER Website SpringerLink Google Scholar Supplementary Cited in SCI: 1

Reconfigurable vertical field-effect transistor based on graphene/MoTe2/graphite heterostructure
Wang, Cong; Pan, Chen; Liang, Shi-Jun; Cheng, Bin; Miao, Feng
Sci China Inf Sci, 2020, 63(10): 202402
Keywords: reconfigurable field-effect transistor; vertical transistor; graphene; mote2; van der waals heterostructure; ambipolar transistor; dual-gate transistor
Cite as: Wang C, Pan C, Liang S-J, et al. Reconfigurable vertical field-effect transistor based on graphene/MoTe2/graphite heterostructure. Sci China Inf Sci, 2020, 63(10): 202402, doi: 10.1007/s11432-019-2778-8

信息器件 新器件 LETTER Website SpringerLink Google Scholar Cited in SCI: 1

Effective gate length model for asymmetrical gate-all-around silicon nanowire transistors
Dong, Xiaoqiao; Li, Ming; Zhang, Wanrong; Yang, Yuancheng; Chen, Gong; Sun, Shuang; Wang, Jianing; Xu, Xiaoyan; An, Xia
Sci China Inf Sci, 2020, 63(10): 209402
Keywords: gate-all-around; nanowire; effective gate length; effective model; asymmetrical
Cite as: Dong X Q, Li M, Zhang W R, et al. Effective gate length model for asymmetrical gate-all-around silicon nanowire transistors. Sci China Inf Sci, 2020, 63(10): 209402, doi: 10.1007/s11432-019-2658-x

信息器件 新器件 LETTER Website SpringerLink Google Scholar Cited in SCI: 1

High-quality and large-grain epi-like Si film by NiSi2-seed initiated lateral epitaxial crystallization (SILEC)
Yang, Yuancheng; Zhang, Baotong; Dong, Xiaoqiao; Li, Xiaokang; Sun, Shuang; Cai, Qifeng; Bi, Ran; Xu, Xiaoyan; Li, Ming; Huang, Ru
Sci China Inf Sci, 2020, 63(12): 229401
Keywords: 3d monolithic integration; 3d-mi; nisi2-seed; low-temperature crystallization; epitaxial; barrier layer; metal contamination
Cite as: Yang Y C, Zhang B T, Dong X Q, et al. High-quality and large-grain epi-like Si film by NiSi2-seed initiated lateral epitaxial crystallization (SILEC). Sci China Inf Sci, 2020, 63(12): 229401, doi: 10.1007/s11432-019-2700-1

信息器件 新器件 LETTER Website SpringerLink Google Scholar Cited in SCI: 1

Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors
Tian, Guoliang; Bi, Jinshun; Xu, Gaobo; Xi, Kai; Yang, Xueqin; Sandip, Majumdar; Yin, Huaxiang; Xu, Qiuxia; Wang, Wenwu
Sci China Inf Sci, 2020, 63(12): 229403
Keywords: soi double-gate fetfet; single-event-transient; heavy ion; numerical simulation; vertical tunneling
Cite as: Tian G L, Bi J S, Xu G B, et al. Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors. Sci China Inf Sci, 2020, 63(12): 229403, doi: 10.1007/s11432-019-2716-5

信息器件 新器件 RESEARCH PAPER Website SpringerLink Google Scholar Cited in SCI: 1

Design space for stabilized negative capacitance in HfO2 ferroelectric-dielectric stacks based on phase field simulation
Chang, Pengying; Du, Gang; Liu, Xiaoyan
Sci China Inf Sci, 2021, 64(2): 122402
Keywords: ferroelectric; polarization dynamics; hysteresis; negative capacitance; depolarization field
Cite as: Chang P Y, Du G, Liu X Y. Design space for stabilized negative capacitance in HfO2 ferroelectric-dielectric stacks based on phase field simulation. Sci China Inf Sci, 2021, 64(2): 122402, doi: 10.1007/s11432-020-3005-8

Special Focus on Near-memory and In-memory Computing
信息器件 新器件 PROGRESS Website SpringerLink Google Scholar Cited in SCI: 1

Breaking the von Neumann bottleneck: architecture-level processing-in-memory technology
Zou, Xingqi; Xu, Sheng; Chen, Xiaoming; Yan, Liang; Han, Yinhe
Sci China Inf Sci, 2021, 64(6): 160404
Keywords: processing-in-memory (pim); von neumann bottleneck; memory wall; pim simulator; architecture-level pim
Cite as: Zou X Q, Xu S, Chen X M, et al. Breaking the von Neumann bottleneck: architecture-level processing-in-memory technology. Sci China Inf Sci, 2021, 64(6): 160404, doi: 10.1007/s11432-020-3227-1

Special Focus on Near-memory and In-memory Computing
信息器件 新器件 RESEARCH PAPER Website SpringerLink Google Scholar Cited in SCI: 1

Neural connectivity inference with spike-timing dependent plasticity network
Moon, John; Wu, Yuting; Zhu, Xiaojian; Lu, Wei D.
Sci China Inf Sci, 2021, 64(6): 160405
Keywords: spike-timing dependent plasticity; neural connectivity; memristor; online learning; second-order memristor
Cite as: Moon J, Wu Y T, Zhu X J, et al. Neural connectivity inference with spike-timing dependent plasticity network. Sci China Inf Sci, 2021, 64(6): 160405, doi: 10.1007/s11432-021-3217-0

信息器件 新器件 LETTER Website SpringerLink Google Scholar Cited in SCI: 0

High mobility germanium-on-insulator p-channel FinFETs
Liu, Huan; Han, Genquan; Zhou, Jiuren; Liu, Yan; Hao, Yue
Sci China Inf Sci, 2021, 64(4): 149402
Keywords: zro2; high mobility; p-channel; finfet; germanium on insulator
Cite as: Liu H, Han G Q, Zhou J R, et al. High mobility germanium-on-insulator p-channel FinFETs. Sci China Inf Sci, 2021, 64(4): 149402, doi: 10.1007/s11432-019-2846-9

Special Focus on Near-memory and In-memory Computing
信息器件 新器件 REVIEW Website SpringerLink Google Scholar Cited in SCI: 0

Keywords: graph processing; machine learning acceleration; reram; hmc; hbm
Cite as: Qian X H. Graph processing and machine learning architectures with emerging memory technologies: a survey. Sci China Inf Sci, 2021, 64(6): 160401, doi: 10.1007/s11432-020-3219-6

Special Focus on Near-memory and In-memory Computing
信息器件 新器件 RESEARCH PAPER Website SpringerLink Google Scholar Cited in SCI: 0

Towards efficient allocation of graph convolutional networks on hybrid computation-in-memory architecture
Chen, Jiaxian; Lin, Guanquan; Chen, Jiexin; Wang, Yi
Sci China Inf Sci, 2021, 64(6): 160409
Keywords: computation-in-memory; graph convolutional networks; hybrid architecture; scheduling; inference; accelerator
Cite as: Chen J X, Lin G Q, Chen J X, et al. Towards efficient allocation of graph convolutional networks on hybrid computation-in-memory architecture. Sci China Inf Sci, 2021, 64(6): 160409, doi: 10.1007/s11432-020-3248-y

信息器件 新器件 RESEARCH PAPER Website SpringerLink Google Scholar Cited in SCI: 0

Tuning the pinning direction of giant magnetoresistive sensor by post annealing process
Cao, Zhiqiang; Wei, Yiming; Chen, Wenjing; Yan, Shaohua; Lin, Lin; Li, Zhi; Wang, Lezhi; Yang, Huaiwen; Leng, Qunwen; Zhao, Weisheng
Sci China Inf Sci, 2021, 64(6): 162402
Keywords: gmr sensor; full wheatstone bridge; annealing; simulation
Cite as: Cao Z Q, Wei Y M, Chen W J, et al. Tuning the pinning direction of giant magnetoresistive sensor by post annealing process. Sci China Inf Sci, 2021, 64(6): 162402, doi: 10.1007/s11432-020-2959-6

信息器件 新器件 LETTER Website SpringerLink Google Scholar Supplementary Cited in SCI: 0

Flash memory based computing-in-memory system to solve partial differential equations
Feng, Yang; Wang, Fei; Zhan, Xuepeng; Li, Yuan; Chen, Jiezhi
Sci China Inf Sci, 2021, 64(6): 169401
Keywords: jacobi iteration; computing-in-memory; flash memory; partial differential equation; spice simulation
Cite as: Feng Y, Wang F, Zhan X P, et al. Flash memory based computing-in-memory system to solve partial differential equations. Sci China Inf Sci, 2021, 64(6): 169401, doi: 10.1007/s11432-020-2942-2

信息器件 新器件 LETTER Website SpringerLink Google Scholar Supplementary Cited in SCI: 0

Controlled nano-cracking actuated by an in-plane voltage
Luo, Qiang; Guo, Zhe; Zhang, Shuai; Yang, Xiaofei; Zou, Xuecheng; Hong, Jeongmin; You, Long
Sci China Inf Sci, 2021, 64(8): 189403
Keywords: nanoelectromechanical switch; ferroelectric nano-cracking; non-volatile switching; complementary switching; reconfigurable logic
Cite as: Luo Q, Guo Z, Zhang S, et al. Controlled nano-cracking actuated by an in-plane voltage. Sci China Inf Sci, 2021, 64(8): 189403, doi: 10.1007/s11432-020-3098-x

信息器件 新器件 LETTER Website SpringerLink Google Scholar Cited in SCI: 0

Nano-scaled transistor reliability characterization at nano-second regime
Cheng, Ran; Sun, Ying; Qu, Yiming; Liu, Wei; Liu, Fanyu; Gao, Jianfeng; Xu, Nuo; Chen, Bing
Sci China Inf Sci, 2021, 64(10): 209401
Keywords: fdsoi; self-heating effect; reliability; prbs; vth shift
Cite as: Cheng R, Sun Y, Qu Y M, et al. Nano-scaled transistor reliability characterization at nano-second regime. Sci China Inf Sci, 2021, 64(10): 209401, doi: 10.1007/s11432-020-3088-3

信息器件 新器件 LETTER Website SpringerLink Google Scholar Cited in SCI: 0

Design of a high-performance 12T SRAM cell for single event upset tolerance
Qi, Chunhua; Zhang, Yanqing; Ma, Guoliang; Liu, Chaoming; Wang, Tianqi; Xiao, Liyi; Huo, Mingxue; Zhai, Guofu
Sci China Inf Sci, 2021, 64(11): 219401
Keywords: reliability; single event upset; sram; radiation hardened by design; single event effect
Cite as: Qi C H, Zhang Y Q, Ma G L, et al. Design of a high-performance 12T SRAM cell for single event upset tolerance. Sci China Inf Sci, 2021, 64(11): 219401, doi: 10.1007/s11432-020-3123-2

信息器件 新器件 LETTER Website SpringerLink Google Scholar Supplementary Cited in SCI: 0

Investigation of weight updating modes on oxide-based resistive switching memory synapse towards neuromorphic computing applications
Ding, Qingting; Gong, Tiancheng; Yu, Jie; Xu, Xiaoxin; Li, Xiaoyan; Lv, Hangbing; Yang, Jianguo; Luo, Qing; Yuan, Peng; Zhang, Feng; Liu, Ming
Sci China Inf Sci, 2021, 64(11): 219402
Keywords: gate voltage ramping; gvr; constant drain voltage; cdv; time lag plot; rtn; neuromorphic computing
Cite as: Ding Q T, Gong T C, Yu J, et al. . Investigation of weight updating modes on oxide-based resistive switching memory synapse towards neuromorphic computing applications. Sci China Inf Sci, 2021, 64(11): 219402, doi: 10.1007/s11432-020-3127-x

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A unified hybrid compact model of β-Ga2O3 Schottky barrier diodes for mixer and rectifier applications
Zhou, Kai; He, Qiming; Jian, Guangzhong; Xu, Guangwei; Wu, Feihong; Li, Yao; Hu, Zhuangzhuang; Feng, Qian; Zhao, Xiaolong; Long, Shibing
Sci China Inf Sci, 2021, 64(11): 219403
Keywords: β-ga2o3 sbds; compact model; model verification; mixer; rectifier
Cite as: Zhou K, He Q M, Jian G Z, et al. A unified hybrid compact model of β-Ga2O3 Schottky barrier diodes for mixer and rectifier applications. Sci China Inf Sci, 2021, 64(11): 219403, doi: 10.1007/s11432-021-3224-2

信息器件 新器件 RESEARCH PAPER Website SpringerLink Google Scholar Cited in SCI: 0

Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate
Zhao, Dujun; Wu, Zhaoxi; Duan, Chao; Mei, Bo; Li, Zhongyang; Wang, Zhongxu; Tang, Qing; Yang, Qing; Wu, Yinhe; Zhang, Weihang; Liu, Zhihong; Zhao, Shenglei; Zhang, Jincheng; Hao, Yue
Sci China Inf Sci, 2022, 65(2): 122401
Keywords: reverse-blocking voltage; aln/algan hemts; schottky-drain; field plate; optimal passivation thickness
Cite as: Zhao D J, Wu Z X, Duan C, et al. Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate. Sci China Inf Sci, 2022, 65(2): 122401, doi: 10.1007/s11432-020-3166-9

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Reconfigurable physical unclonable cryptographic primitives based on current-induced nanomagnets switching
Zhang, Shuai; Zhang, Jian; Li, Shihao; Wang, Yaoyuan; Chen, Zhenjiang; Hong, Jeongmin; You, Long
Sci China Inf Sci, 2022, 65(2): 122405
Keywords: reconfigurable physical unclonable function; spin-orbit torque; cryptographic primitive; spintronics; nanomagnet
Cite as: Zhang S, Zhang J, Li S H, et al. Reconfigurable physical unclonable cryptographic primitives based on current-induced nanomagnets switching. Sci China Inf Sci, 2022, 65(2): 122405, doi: 10.1007/s11432-021-3270-8

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Stateful implication logic based on perpendicular magnetic tunnel junctions
Cai, Wenlong; Wang, Mengxing; Cao, Kaihua; Yang, Huaiwen; Peng, Shouzhong; Li, Huisong; Zhao, Weisheng
Sci China Inf Sci, 2022, 65(2): 122406
Keywords: perpendicular magnetic anisotropy magnetic tunnel junction; implication; spin transfer torque; spintronic implication logic gate; processing-in-memory
Cite as: Cai W L, Wang M X, Cao K H, et al. Stateful implication logic based on perpendicular magnetic tunnel junctions. Sci China Inf Sci, 2022, 65(2): 122406, doi: 10.1007/s11432-020-3189-x

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A neuromorphic core based on threshold switching memristor with asynchronous address event representation circuits
Wei, Jinsong; Zhang, Jilin; Zhang, Xumeng; Wu, Zuheng; Wang, Rui; Lu, Jian; Shi, Tuo; Chan, Mansun; Liu, Qi; Chen, Hong
Sci China Inf Sci, 2022, 65(2): 122408
Keywords: leaky-integration-and-fire; lif; memristor; threshold switching; artificial neuron; aer circuits; asynchronous circuits; on-chip communication
Cite as: Wei J S, Zhang J L, Zhang X M, et al. A neuromorphic core based on threshold switching memristor with asynchronous address event representation circuits. Sci China Inf Sci, 2022, 65(2): 122408, doi: 10.1007/s11432-020-3203-0

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Low-time-complexity document clustering using memristive dot product engine
Zhou, Houji; Li, Yi; Miao, Xiangshui
Sci China Inf Sci, 2022, 65(2): 122410
Keywords: linear-time clustering; cosine similarity; spherical k-means; memristor; in-memory computing
Cite as: Zhou H J, Li Y, Miao X S. Low-time-complexity document clustering using memristive dot product engine. Sci China Inf Sci, 2022, 65(2): 122410, doi: 10.1007/s11432-021-3316-x

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SEU sensitivity and large spacing TMR efficiency of Kintex-7 and Virtex-7 FPGAs
Cai, Chang; Ning, Bingxu; Fan, Xue; Liu, Tianqi; Ke, Lingyun; Chen, Gengsheng; Yu, Jian; He, Ze; Xu, Liewei; Liu, Jie
Sci China Inf Sci, 2022, 65(2): 129402
Keywords: microelectronics; radiation effects; space electronics; radiation tolerance; fpga; reliability
Cite as: Cai C, Ning B X, Fan X, et al. SEU sensitivity and large spacing TMR efficiency of Kintex-7 and Virtex-7 FPGAs. Sci China Inf Sci, 2022, 65(2): 129402, doi: 10.1007/s11432-020-3169-x

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Effects of non-fatal electrostatic discharge on the threshold voltage degradation in nano CMOS devices
Wong, Hei; Dong, Shurong; Chen, Zehua
Sci China Inf Sci, 2022, 65(2): 129403
Keywords: nano cmos; esd; reliability; hot-carrier; charge trapping
Cite as: Wong H, Dong S R, Chen Z H. Effects of non-fatal electrostatic discharge on the threshold voltage degradation in nano CMOS devices. Sci China Inf Sci, 2022, 65(2): 129403, doi: 10.1007/s11432-020-3197-8

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Unidirectional p-GaN gate HEMT with composite source-drain field plates
Wang, Haiyong; Mao, Wei; Zhao, Shenglei; He, Yuanhao; Chen, Jiabo; Du, Ming; Zheng, Xuefeng; Wang, Chong; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue
Sci China Inf Sci, 2022, 65(2): 129405
Keywords: p-gan; hemt; reverse blocking; composite source-drain field plates; dynamic performance; electric field; breakdown voltage
Cite as: Wang H Y, Mao W, Zhao S L, et al. Unidirectional p-GaN gate HEMT with composite source-drain field plates. Sci China Inf Sci, 2022, 65(2): 129405, doi: 10.1007/s11432-021-3267-3

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Neuromorphic sensory computing
Wan, Tianqing; Ma, Sijie; Liao, Fuyou; Fan, Lingwei; Chai, Yang
Sci China Inf Sci, 2022, 65(4): 141401
Keywords: neuromorphic; sensory computing; multimodal sensory computing; electronic sensory computing; optical sensory computing
Cite as: Wan T Q, Ma S J, Liao F Y, et al. Neuromorphic sensory computing. Sci China Inf Sci, 2022, 65(4): 141401, doi: 10.1007/s11432-021-3336-8

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Femtosecond laser-assisted switching in perpendicular magnetic tunnel junctions with double-interface free layer
Wang, Luding; Cai, Wenlong; Cao, Kaihua; Shi, Kewen; Koopmans, Bert; Zhao, Weisheng
Sci China Inf Sci, 2022, 65(4): 142403
Keywords: magnetic tunnel junctions; mtjs; heat-assisted magnetic recording; hamr; spintronics; femtosecond laser; thermally-assisted switching; tas
Cite as: Wang L D, Cai W L, Cao K H, et al. Femtosecond laser-assisted switching in perpendicular magnetic tunnel junctions with double-interface free layer. Sci China Inf Sci, 2022, 65(4): 142403, doi: 10.1007/s11432-020-3244-8

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IGZO-based neuromorphic transistors with temperature-dependent synaptic plasticity and spiking logics
Zhu, Ying; He, Yongli; Chen, Chunsheng; Zhu, Li; Wan, Changjin; Wan, Qing
Sci China Inf Sci, 2022, 65(6): 162401
Keywords: neuromorphic transistors; igzo tfts; temperature-dependent synaptic plasticity; logic transformation
Cite as: Zhu Y, He Y L, Chen C S, et al. IGZO-based neuromorphic transistors with temperature-dependent synaptic plasticity and spiking logics. Sci China Inf Sci, 2022, 65(6): 162401, doi: 10.1007/s11432-021-3326-6

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Toward practical gas sensing with rapid recovery semiconducting carbon nanotube film sensors
Liu, Fangfang; Xiao, Mengmeng; Ning, Yongkai; Zhou, Shaoyuan; He, Jianping; Lin, Yanxia; Zhang, Zhiyong
Sci China Inf Sci, 2022, 65(6): 162402
Keywords: carbon nanotube; gas sensor; thin-film transistors; rapid recovery
Cite as: Liu F F, Xiao M M, Ning Y K, et al. Toward practical gas sensing with rapid recovery semiconducting carbon nanotube film sensors. Sci China Inf Sci, 2022, 65(6): 162402, doi: 10.1007/s11432-021-3286-3

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Physical investigation of subthreshold swing degradation behavior in negative capacitance FET
Yang, Mengxuan; Huang, Qianqian; Wang, Kaifeng; Su, Chang; Chen, Liang; Wang, Yangyuan; Huang, Ru
Sci China Inf Sci, 2022, 65(6): 162404
Keywords: ferroelectric; negative differential capacitance effect; polarization; low power; voltage amplification
Cite as: Yang M X, Huang Q Q, Wang K F, et al. Physical investigation of subthreshold swing degradation behavior in negative capacitance FET. Sci China Inf Sci, 2022, 65(6): 162404, doi: 10.1007/s11432-021-3283-5

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Experimental investigation of the gate voltage range of negative differential capacitance in ferroelectric transistors
YANG, Mengxuan; HUANG, Qianqian; SU, Chang; CHEN, Liang; WANG, Yangyuan; HUANG, Ru
Sci China Inf Sci, 2022, 65(6): 169402
Keywords: Ferroelectric; Negative differential capacitance effect; Polarization; Low power; Subthreshold swing
Cite as: Yang M X, Huang Q Q, Su C, et al. Experimental investigation of the gate voltage range of negative differential capacitance in ferroelectric transistors. Sci China Inf Sci, 2022, 65(6): 169402, doi: 10.1007/s11432-021-3268-0

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Total ionizing dose effects on aluminum oxide/ zirconium-doped hafnium oxide stack ferroelectric tunneling junctions
Yang, Xueqin; Xu, Yannan; Bi, Jinshun; Xi, Kai; Fan, Linjie; Ji, Lanlong; Xu, Gaobo
Sci China Inf Sci, 2022, 65(6): 169403
Keywords: HfO2; ferroelectric tunneling junctions; dielectric; total ionizing dose; gamma-ray radiation
Cite as: Yang X Q, Xu Y N, Bi J S, et al. Total ionizing dose effects on aluminum oxide/ zirconium-doped hafnium oxide stack ferroelectric tunneling junctions. Sci China Inf Sci, 2022, 65(6): 169403, doi: 10.1007/s11432-021-3269-4

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Novel SiC SBD-wall-integrated trench MOSFET with a semi-superjunction and split trench gate
Luo, Xiaorong; Huang, Junyue; Song, Xu; Jiang, Qinfeng; Wei, Jie; Fang, Jian; Yang, Fei
Sci China Inf Sci, 2022, 65(6): 169404
Keywords: SiC; MOSFET; Schottky barrier diode; semi-superjunction; split trench gate; reverse turn-on voltage
Cite as: Luo X R, Huang J Y, Song X, et al. Novel SiC SBD-wall-integrated trench MOSFET with a semi-superjunction and split trench gate. Sci China Inf Sci, 2022, 65(6): 169404, doi: 10.1007/s11432-021-3324-0

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Single event transients induced by pulse laser in Ge pMOSFETs and its supply voltage dependence
LIU, Jingyi; AN, Xia; LI, Gensong; REN, Zhexuan; LI, Ming; ZHANG, Xing; HUANG, Ru
Sci China Inf Sci, 2022, 65(8): 189402
Keywords: Ge pMOSFETs; single event transient; single event effect; SEE; pulse laser; supply voltage dependence
Cite as: Liu J Y, An X, Li G S, et al. Single event transients induced by pulse laser in Ge pMOSFETs and its supply voltage dependence. Sci China Inf Sci, 2022, 65(8): 189402, doi: 10.1007/s11432-021-3372-2